IKW25N120H3FKSA1

IGBT HighspeedDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fastrecovery anti-paralleldiode IKW25N120H3 1200Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl IKW25N120H3 Highspeedswitchingseriesthirdgeneration HighspeedDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fast recoveryanti-paralleldiode  Features: C TRENCHSTOPTMtechnologyoffering •verylowVCEsat •lowEMI •Verysoft,fastrecoveryanti-paralleldiode •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •completeproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E Applications: •uninterruptiblepowersupplies •weldingconverters •converterswithhighswitchingfrequency G C E KeyPerformanceandPackageParameters Type IKW25N120H3 VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 1200V 25A 2.05V 175°C K25H1203 PG-TO247-3 2 Rev.2.1,2014-12-01 IKW25N120H3 Highspeedswitchingseriesthirdgeneration TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 3 Rev.2.1,2014-12-01 IKW25N120H3 Highspeedswitchingseriesthirdgeneration MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=100°C IC 50.0 25.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 100.0 A TurnoffsafeoperatingareaVCE≤1200V,Tvj≤175°C - 100.0 A Diodeforwardcurrent,limitedbyTvjmax TC=25°C TC=100°C IF 25.0 12.5 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 100.0 A Gate-emitter voltage VGE ±20 V Short circuit withstand time VGE=15.0V,VCC≤600V Allowed number of short circuits < 1000 Time between short circuits: ≥ 1.0s Tvj=175°C tSC PowerdissipationTC=25°C PowerdissipationTC=100°C Ptot 326.0 156.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C µs 10 Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s °C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit IGBT thermal resistance, junction - case Rth(j-c) 0.46 K/W Diode thermal resistance, junction - case Rth(j-c) 1.49 K/W Thermal resistance junction - ambient Rth(j-a) 40 K/W 4 Rev.2.1,2014-12-01 IKW25N120H3 Highspeedswitchingseriesthirdgeneration ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 1200 - - VGE=15.0V,IC=25.0A Tvj=25°C Tvj=125°C Tvj=175°C - 2.05 2.50 2.70 2.40 - VF VGE=0V,IF=12.5A Tvj=25°C Tvj=175°C - 1.80 1.85 2.35 - Diode forward voltage VF VGE=0V,IF=25.0A Tvj=25°C Tvj=125°C Tvj=175°C - 2.40 2.60 2.60 3.05 - Gate-emitter threshold voltage VGE(th) IC=0.85mA,VCE=VGE 5.0 5.8 6.5 Zero gate voltage collector current ICES VCE=1200V,VGE=0V Tvj=25°C Tvj=175°C - - Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 600 nA Transconductance gfs VCE=20V,IC=25.0A - 13.0 - S StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA Collector-emitter saturation voltage VCEsat Diode forward voltage V V V V V 250.0 µA 2500.0 ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 1430 - - 115 - - 75 - - 115.0 - nC - 13.0 - nH - A DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE Short circuit collector current Max. 1000 short circuits IC(SC) Time between short circuits: ≥ 1.0s VCE=25V,VGE=0V,f=1MHz VCC=960V,IC=25.0A, VGE=15V VGE=15.0V,VCC≤600V, tSC≤10µs Tvj=175°C 5 - 87 pF Rev.2.1,2014-12-01 IKW25N120H3 Highspeedswitchingseriesthirdgeneration SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 27 - ns - 41 - ns - 277 - ns - 17 - ns - 1.80 - mJ - 0.85 - mJ - 2.65 - mJ - 290 - ns - 1.20 - µC - 10.4 - A - -150 - A/µs IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=25°C, VCC=600V,IC=25.0A, VGE=0.0/15.0V, RG(on)=23.0Ω,RG(off)=23.0Ω, Lσ=80nH,Cσ=67pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=25°C, VR=600V, IF=25.0A, diF/dt=500A/µs dirr/dt SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 26 - ns - 35 - ns - 347 - ns - 50 - ns - 2.60 - mJ - 1.70 - mJ - 4.30 - mJ - 505 - ns - 2.75 - µC - 12.8 - A - -85 - A/µs IGBTCharacteristic,atTvj=175°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=175°C, VCC=600V,IC=25.0A, VGE=0.0/15.0V, RG(on)=23.0Ω,RG(off)=23.0Ω, Lσ=80nH,Cσ=67pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. DiodeCharacteristic,atTvj=175°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=175°C, VR=600V, IF=25.0A, diF/dt=500A/µs dirr/dt 6 Rev.2.1,2014-12-01 IKW25N120H3 Highspeedswitchingseriesthirdgeneration 110 100 100 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 90 80 70 60 50 40 TC=80° 30 tp=1µs 10µs 10 50µs 100µs 200µs 500µs 1 DC TC=110° 20 TC=80° 10 0 TC=110° 1 10 100 0.1 1000 1 f,SWITCHINGFREQUENCY[kHz] 10 100 1000 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 1. Collectorcurrentasafunctionofswitching frequency (Tj≤175°C,D=0.5,VCE=600V,VGE=15/0V, rG=23Ω) Figure 2. Forwardbiassafeoperatingarea (D=0,TC=25°C,Tj≤175°C;VGE=15V) 350 50 300 IC,COLLECTORCURRENT[A] Ptot,POWERDISSIPATION[W] 40 250 200 150 100 30 20 10 50 0 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[°C] 25 50 75 100 125 150 175 TC,CASETEMPERATURE[°C] Figure 3. Powerdissipationasafunctionofcase temperature (Tj≤175°C) Figure 4. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tj≤175°C) 7 Rev.2.1,2014-12-01 IKW25N120H3 Highspeedswitchingseriesthirdgeneration 100 100 VGE=20V 17V 15V 13V 60 11V 9V 7V 40 5V 20 0 17V 80 IC,COLLECTORCURRENT[A] 80 IC,COLLECTORCURRENT[A] VGE=20V 15V 13V 60 11V 9V 7V 40 5V 20 0 2 4 0 6 0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tj=25°C) 6 8 5.0 VCE(sat),COLLECTOR-EMITTERSATURATION[V] Tj=25°C Tj=175°C 60 IC,COLLECTORCURRENT[A] 4 Figure 6. Typicaloutputcharacteristic (Tj=175°C) 75 45 30 15 0 2 VCE,COLLECTOR-EMITTERVOLTAGE[V] 5 10 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 15 VGE,GATE-EMITTERVOLTAGE[V] IC=12.5A IC=25A IC=50A 0 25 50 75 100 125 150 175 Tj,JUNCTIONTEMPERATURE[°C] Figure 7. Typicaltransfercharacteristic (VCE=20V) Figure 8. Typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 8 Rev.2.1,2014-12-01 IKW25N120H3 Highspeedswitchingseriesthirdgeneration 1000 1000 td(off) tf td(on) tr t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] td(off) tf td(on) tr 100 10 5 15 25 35 100 10 45 5 15 IC,COLLECTORCURRENT[A] Figure 9. Typicalswitchingtimesasafunctionof collectorcurrent (ind.load,Tj=175°C,VCE=600V,VGE=15/0V, rG=23Ω,testcircuitinFig.E) 45 55 65 7 VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] td(off) tf td(on) tr t,SWITCHINGTIMES[ns] 35 Figure 10. Typicalswitchingtimesasafunctionofgate resistor (ind.load,Tj=175°C,VCE=600V,VGE=15/0V, IC=25A,testcircuitinFig.E) 1000 100 10 25 rG,GATERESISTOR[Ω] 0 25 50 75 100 125 150 typ. min. max. 6 5 4 3 2 175 Tj,JUNCTIONTEMPERATURE[°C] 0 25 50 75 100 125 150 175 Tj,JUNCTIONTEMPERATURE[°C] Figure 11. Typicalswitchingtimesasafunctionof junctiontemperature (ind.load,VCE=600V,VGE=15/0V,IC=25A, rG=23Ω,testcircuitinFig.E) Figure 12. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0.85mA) 9 Rev.2.1,2014-12-01 IKW25N120H3 Highspeedswitchingseriesthirdgeneration 12 7 8 6 4 2 0 Eoff Eon Ets 6 10 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] Eoff Eon Ets 5 4 3 2 1 5 15 25 35 0 45 5 15 IC,COLLECTORCURRENT[A] 25 35 45 55 65 rG,GATERESISTOR[Ω] Figure 13. Typicalswitchingenergylossesasa functionofcollectorcurrent (ind.load,Tj=175°C,VCE=600V,VGE=15/0V, rG=23Ω,testcircuitinFig.E) Figure 14. Typicalswitchingenergylossesasa functionofgateresistor (ind.load,Tj=175°C,VCE=600V,VGE=15/0V, IC=25A,testcircuitinFig.E) 6 Eoff Eon Ets E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 4 Eoff Eon Ets 3 2 1 0 0 25 50 75 100 125 150 5 4 3 2 1 0 400 175 Tj,JUNCTIONTEMPERATURE[°C] 500 600 700 800 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 15. Typicalswitchingenergylossesasa functionofjunctiontemperature (indload,VCE=600V,VGE=15/0V,IC=25A, rG=23Ω,testcircuitinFig.E) Figure 16. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (ind.load,Tj=175°C,VGE=15/0V,IC=25A, rG=23Ω,testcircuitinFig.E) 10 Rev.2.1,2014-12-01 IKW25N120H3 Highspeedswitchingseriesthirdgeneration 16 240V 960V 14 12 C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 1000 10 8 6 Cies Coes Cres 100 4 2 0 0 20 40 60 80 100 10 120 0 QGE,GATECHARGE[nC] Figure 17. Typicalgatecharge (IC=25A) 30 50 160 tSC,SHORTCIRCUITWITHSTANDTIME[µs] IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A] 20 Figure 18. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) 180 140 120 100 80 60 40 20 10 VCE,COLLECTOR-EMITTERVOLTAGE[V] 10 12 14 16 40 30 20 10 0 18 VGE,GATE-EMITTERVOLTAGE[V] 10 12 14 16 18 20 VGE,GATE-EMITTERVOLTAGE[V] Figure 19. Typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage (VCE≤600V,startatTj=25°C) Figure 20. Shortcircuitwithstandtimeasafunctionof gate-emittervoltage (VCE≤600V,startatTj≤150°C) 11 Rev.2.1,2014-12-01 IKW25N120H3 Highspeedswitchingseriesthirdgeneration ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W] ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W] 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 single pulse 0.01 1 D=0.5 0.2 0.1 0.05 0.1 0.02 0.01 single pulse 0.01 i: 1 2 3 4 5 ri[K/W]: 0.08133 0.09366 0.22305 0.05925 5.7E-3 τi[s]: 2.6E-4 1.7E-3 0.01009673 0.0336145 0.2730749 0.001 1E-6 1E-5 1E-4 0.001 0.01 0.1 i: 1 2 3 4 5 ri[K/W]: 0.3921 0.5592 0.4557 0.077415 9.0E-3 τi[s]: 2.5E-4 1.6E-3 9.0E-3 0.03875911 0.2738223 0.001 1E-6 1 tp,PULSEWIDTH[s] 1E-5 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 21. IGBTtransientthermalimpedance (D=tp/T) Figure 22. Diodetransientthermalimpedanceasa functionofpulsewidth (D=tp/T) 700 Tj=25°C, IF = 25A Tj=175°C, IF = 25A Qrr,REVERSERECOVERYCHARGE[µC] trr,REVERSERECOVERYTIME[ns] Tj=25°C, IF = 25A Tj=175°C, IF = 25A 600 500 400 300 200 200 400 600 800 1000 1200 1400 1600 diF/dt,DIODECURRENTSLOPE[A/µs] 3 2 1 0 200 600 1000 1400 1800 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 23. Typicalreverserecoverytimeasafunction ofdiodecurrentslope (VR=600V) 12 Figure 24. Typicalreverserecoverychargeasa functionofdiodecurrentslope (VR=600V) Rev.2.1,2014-12-01 IKW25N120H3 Highspeedswitchingseriesthirdgeneration 18 0 Tj=25°C, IF = 25A Tj=175°C, IF = 25A Tj=25°C, IF = 25A Tj=175°C, IF = 25A dIrr/dt,diodepeakrateoffallofIrr[A/µs] Irr,REVERSERECOVERYCURRENT[A] 16 14 12 10 8 -100 -200 -300 6 4 200 600 1000 1400 -400 200 1800 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 25. Typicalreverserecoverycurrentasa functionofdiodecurrentslope (VR=600V) 1400 1800 4.0 Tj=25°C Tj=175°C IF=6.25A IF=12.5A IF=25A 3.5 VF,FORWARDVOLTAGE[V] 100 IF,FORWARDCURRENT[A] 1000 Figure 26. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=600V) 120 80 60 40 20 0 600 diF/dt,DIODECURRENTSLOPE[A/µs] 3.0 2.5 2.0 1.5 0 1 2 3 4 1.0 5 VF,FORWARDVOLTAGE[V] 0 25 50 75 100 125 150 175 Tj,JUNCTIONTEMPERATURE[°C] Figure 27. Typicaldiodeforwardcurrentasafunction offorwardvoltage 13 Figure 28. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature Rev.2.1,2014-12-01 IKW25N120H3 Highspeedswitchingseriesthirdgeneration PG-TO247-3 14 Rev.2.1,2014-12-01 IKW25N120H3 Highspeedswitchingseriesthirdgeneration vGE(t) I,V 90% VGE dIF/dt a a 10% VGE b b t IC(t) dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t vCE(t) t td(off) tf td(on) t tr Figure A. vGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t vCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Ls, relief capacitor Cr, (only for ZVT switching) on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. 15 Rev.2.1,2014-12-01 IKW25N120H3 High speed switching series third generation Revision History IKW25N120H3 Revision: 2014-12-01, Rev. 2.1 Previous Revision Revision Date Subjects (major changes since last revision) 1.1 2009-11-27 - 1.2 2010-02-10 - 2.1 2014-12-01 Final data sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany © 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 16 Rev. 2.1, 2014-12-01