IKW25N120T2

IKW25N120T2 ® TrenchStop 2 nd generation Series Low Loss DuoPack : IGBT in 2nd generation TrenchStop® with soft, fast recovery anti-parallel Emitter Controlled Diode C   Short circuit withstand time – 10s Designed for : - Frequency Converters - Uninterrupted Power Supply ® nd  TrenchStop 2 generation for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior  Easy paralleling capability due to positive temperature coefficient in VCE(sat)  Low EMI  Low Gate Charge  Very soft, fast recovery anti-parallel Emitter Controlled HE Diode 1  Qualified according to JEDEC for target applications  Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type IKW25N120T2 G E PG-TO-247-3 VCE IC VCE(sat),Tj=25°C Tj,max Marking Code Package 1200V 25A 1.7V 175C K25T1202 PG-TO-247-3 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V DC collector current (Tj=150°C) IC A TC = 25C 50 TC = 110C 25 Pulsed collector current, tp limited by Tjmax ICpul s 100 Turn off safe operating area - 100 VCE  1200V, Tj  175C Diode forward current (Tj=150°C) IF TC = 25C 40 TC = 110C 25 Diode pulsed current, tp limited by Tjmax IFpul s 100 Gate-emitter voltage VGE 20 V tSC 10 s Ptot 349 W C Short circuit withstand time 2) VGE = 15V, VCC  600V, Tj, start  175C Power dissipation TC = 25C Operating junction temperature Tj -40...+175 Storage temperature Tstg -55...+150 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260 Wavesoldering only, temperature on leads only 1 2) J-STD-020 and JESD-022 Allowed number of short circuits: 1s. IFAG IPC TD VLS 1 Rev. 2.2 12.06.2013 IKW25N120T2 ® TrenchStop 2 nd generation Series Thermal Resistance Parameter Symbol Conditions Max. Value Unit RthJC 0.43 K/W RthJCD 0.81 Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, RthJA 40 junction – ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Value min. typ. max. 1200 - - T j =2 5 C - 1.7 2.2 T j =1 5 0 C - 2.1 - T j =1 7 5 C - 2.2 - T j =2 5 C - 1.65 2.2 T j =1 5 0 C - 1.7 - T j =1 7 5 C - 1.65 - 5.2 5.8 6.4 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V , I C = 5 00 µ A Collector-emitter saturation voltage VCE(sat) Diode forward voltage VF V V G E = 15 V , I C = 25 A V G E = 0V , I F = 2 5 A Gate-emitter threshold voltage VGE(th) I C = 1. 0m A, V C E = V G E Zero gate voltage collector current ICES V C E = 12 0 0V , V G E = 0V mA T j =2 5 C - - 0.4 T j =1 5 0  C - - 4.0 T j =1 7 5 C 20 Gate-emitter leakage current IGES V C E = 0V , V G E =2 0 V - - 200 nA Transconductance gfs V C E = 20 V , I C = 25 A - 13.5 - S Rev. 2.2 12.06.2013 IFAG IPC TD VLS 2 IKW25N120T2 ® TrenchStop 2 nd generation Series Dynamic Characteristic Input capacitance Ciss V C E = 25 V , - 1600 - Output capacitance Coss V G E = 0V , - 155 - Reverse transfer capacitance Crss f= 1 MH z - 90 - Gate charge QGate V C C = 96 0 V, I C =2 5 A - 120 - nC - 13 - nH - A pF V G E = 15 V LE Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 1) IC(SC) V G E = 15 V ,t S C  10 s V C C = 6 0 0 V, T j , s t a r t = 2 5 C 150 Tj,start = 175C 115 Switching Characteristic, Inductive Load, at Tj=25 C Parameter Symbol Conditions Value min. typ. max. - 27 - - 20 - - 265 - - 95 - - 1.55 - - 1.35 - - 2.9 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j =2 5 C , V C C = 60 0 V, I C = 2 5 A, V G E = 0/ 15 V , R G = 16 . 4, 2) L  =1 0 5n H, 2) C  = 3 9p F Energy losses include “tail” and diode reverse recovery. Diode reverse recovery time trr T j =2 5 C , - 195 Diode reverse recovery charge Qrr V R = 6 00 V , I F = 2 5 A, - 2.05 Diode peak reverse recovery current Irrm d i F / d t =1 0 50 A / s - 20 Diode peak rate of fall of reverse recovery current during t b d i r r /d t - 475 ns mJ Anti-Parallel Diode Characteristic 1) 2) ns µC A - A/s Allowed number of short circuits: 1s. Leakage inductance L  a nd Stray capacity C  due to dynamic test circuit in Figure E. IFAG IPC TD VLS 3 Rev. 2.2 12.06.2013 IKW25N120T2 ® TrenchStop 2 nd generation Series Switching Characteristic, Inductive Load, at Tj=175 C Parameter Symbol Conditions Value min. typ. max. - 25 - - 24 - - 340 - - 164 - - 2.25 - - 2.05 - - 4.3 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j =1 7 5 C V C C = 60 0 V, I C = 2 5 A, V G E = 0/ 15 V , R G = 1 6. 4 , 1) L  =1 7 5n H, 1) C  = 6 7p F Energy losses include “tail” and diode reverse recovery. Diode reverse recovery time trr T j =1 7 5 C - 290 - ns Diode reverse recovery charge Qrr V R = 6 00 V , I F = 2 5 A, - 3.65 - µC Diode peak reverse recovery current Irrm d i F / d t =1 0 00 A / s - 24 - A Diode peak rate of fall of reverse recovery current during t b d i r r /d t - 330 ns mJ Anti-Parallel Diode Characteristic 1) A/s Leakage inductance L  a nd Stray capacity C  due to dynamic test circuit in Figure E. IFAG IPC TD VLS 4 Rev. 2.2 12.06.2013 IKW25N120T2 ® TrenchStop 2 nd generation Series 100A tp=3µs 100A TC=80°C IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 10µs 80A TC=110°C 60A 40A Ic 20A 10A 50µs 150µs 500µs 1A 20ms Ic DC 0A 10Hz 0.1A 100Hz 1kHz 10kHz 100kHz f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj  175C, D = 0.5, VCE = 600V, VGE = 0/+15V, RG = 12) 1V 10V 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C;VGE=15V) 350W 50A IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 300W 250W 200W 150W 100W 40A 30A 20A 10A 50W 0W 25°C 50°C 75°C 100°C 125°C 0A 25°C 150°C TC, CASE TEMPERATURE Figure 3. Maximum power dissipation as a function of case temperature (Tj  175C) IFAG IPC TD VLS 5 75°C 125°C TC, CASE TEMPERATURE Figure 4. Maximum collector current as a function of case temperature (VGE  15V, Tj  175C) Rev. 2.2 12.06.2013 IKW25N120T2 ® TrenchStop 2 20V 80A 80A VGE=17V IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT generation Series 100A 100A 15V 60A 13V 11V 9V 40A 7V 20A 20V VGE=17V 15V 60A 13V 11V 9V 40A 7V 20A 0A 0A 0V 1V 2V 3V 0V 4V 80A 70A 60A 50A 40A 30A 20A TJ=175°C 25°C 10A 0A 0V 2V 4V 6V 8V 10V 1V 3V 4V 12V 3.5V 3.0V IC=50A 2.5V 2.0V IC=25A 1.5V IC=12.5A 1.0V IC= 3A 0.5V 0.0V 0°C VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) IFAG IPC TD VLS 2V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175°C) VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) IC, COLLECTOR CURRENT nd 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 6 Rev. 2.2 12.06.2013 IKW25N120T2 ® TrenchStop 2 td(off) 100ns generation Series 1000 ns t, SWITCHING TIMES t, SWITCHING TIMES 1000ns nd tf td(off) tf 100 ns td(on) td(on) 10ns tr 10A 20A 30A 10 ns 40A  t, SWITCHING TIMES td(off) 100ns tf td(on) tr 10ns 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=25A, RG=16.4Ω, Dynamic test circuit in Figure E) IFAG IPC TD VLS        RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=175°C, VCE=600V, VGE=0/15V, IC=25A, Dynamic test circuit in Figure E) VGE(th), GATE-EMITT TRSHOLD VOLTAGE IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175°C, VCE=600V, VGE=0/15V, RG=16.4Ω, Dynamic test circuit in Figure E) 0°C tr 6.5V 6.0V max. 5.5V typ. 5.0V min. 4.5V 4.0V 3.5V 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 1.0mA) 7 Rev. 2.2 12.06.2013 IKW25N120T2 ® TrenchStop 2 nd generation Series *) Eon and Ets include losses due to diode recovery Ets* 10.0mJ Eon* 5.0mJ Eoff E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES *) Eon and Etsinclude losses due to diode recovery 0.0mJ 10A 20A 30A 7.5 mJ IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=175°C, VCE=600V, VGE=0/15V, RG=16.4Ω, Dynamic test circuit in Figure E) Eoff 2.5 mJ        *) Eon and Ets include losses due to diode recovery Ets* 3mJ Eon* 2mJ Eoff 1mJ E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES  RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=175°C, VCE=600V, VGE=0/15V, IC=25A, Dynamic test circuit in Figure E) *) Eon and Ets include losses due to diode recovery 4mJ Eon* 5.0 mJ 0.0 mJ 40A Ets* 5.0mJ Ets* 2.5mJ Eoff Eon* 0mJ 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=25A, RG=16.4Ω, Dynamic test circuit in Figure E) IFAG IPC TD VLS 0.0mJ 400V 500V 600V 700V VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ=175°C, VGE=0/15V, IC=25A, RG=16.4Ω, Dynamic test circuit in Figure E) 8 Rev. 2.2 12.06.2013 IKW25N120T2 ® TrenchStop 2 nd generation Series Ciss 1nF 240V 960V 10V Coss 100pF Crss 5V 0V 10pF 0nC 50nC 0V 100nC 15µs 10µs 5µs 0µs 12V 14V 16V 20V 200A 150A 100A 50A 0A 18V VGE, GATE-EMITTETR VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ  175°C) IFAG IPC TD VLS 10V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) IC(sc), short circuit COLLECTOR CURRENT QGE, GATE CHARGE Figure 17. Typical gate charge (IC=25 A) tSC, SHORT CIRCUIT WITHSTAND TIME c, CAPACITANCE VGE, GATE-EMITTER VOLTAGE 15V 12V 14V 16V 18V VGE, GATE-EMITTETR VOLTAGE Figure 20. Typical short circuit collector current as a function of gateemitter voltage (VCE  600V, Tj,start = 175C) 9 Rev. 2.2 12.06.2013 IKW25N120T2 ® 45A 400V 30A 200V 15A IC 0us 0.4us 0.8us 400V 15A 200V 0.2 0.1 0.05 -2 10 K/W R,(K/W) 0.083 0.116 0.02 0.213 0.014 0.01 single pulse R1 , (s) -4 2.77*10 3.21*10-3 1.73*10-2 2.77*10-1 R2 C 1 =  1 /R 1 C 2 =  2 /R 2 0.4us 0.8us 1.2us t, TIME Figure 22. Typical turn off behavior (VGE=15/0V, RG=16.4Ω, Tj = 175C, Dynamic test circuit in Figure E) ZthJC, TRANSIENT THERMAL RESISTANCE D=0.5 0V 0A 0us 1.2us t, TIME Figure 21. Typical turn on behavior (VGE=0/15V, RG=16.4Ω, Tj = 175C, Dynamic test circuit in Figure E) -1 30A VCE 0A 10 K/W 600V 45A IC 0V ZthJC, TRANSIENT THERMAL RESISTANCE generation Series VCE 600V IC, COLLECTOR CURRENT VCE, COLLECTOR-EMITTER VOLTAGE TrenchStop 2 nd D=0.5 0.2 R,(K/W) 0.198 0.301 0.287 0.019 -1 10 K/W 0.1 0.05 0.02 R 1 , (s) 3.31*10-4 3.33*10-3 1.68*10-2 2.49*10-1 R2 0.01 C 1 =  1 /R 1 C 2 =  2 /R 2 single pulse -2 10 K/W -3 10 K/W 10µs 100µs 1ms 10ms 100ms 10µs tP, PULSE WIDTH Figure 23. IGBT transient thermal resistance (D = tp / T) IFAG IPC TD VLS 10 100µs 1ms 10ms tP, PULSE WIDTH 100ms Figure 24. Diode transient thermal impedance as a function of pulse width (D=tP/T) Rev. 2.2 12.06.2013 IKW25N120T2 ® TrenchStop 2 nd generation Series TJ=175°C Qrr, REVERSE RECOVERY CHARGE trr, REVERSE RECOVERY TIME 600ns 500ns 400ns TJ=175°C 300ns 200ns TJ=25°C 100ns 0ns 400A/µs 3µC 2µC TJ=25°C 1µC 0µC 400A/µs 800A/µs 1200A/µs 1600A/µs 2000A/µs diF/dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as a function of diode current slope (VR=600V, IF=25A, Dynamic test circuit in Figure E) 4µC 800A/µs 1200A/µs 1600A/µs 2000A/µs diF/dt, DIODE CURRENT SLOPE Figure 24. Typical reverse recovery charge as a function of diode current slope (VR=600V, IF=25A, Dynamic test circuit in Figure E) TJ=25°C Irr, REVERSE RECOVERY CURRENT 35A dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT TJ=175°C 30A TJ=25°C 25A 20A 15A 10A 5A -1200A/µs -800A/µs TJ=175°C -400A/µs -0A/µs 400A/µs 0A 400A/µs 800A/µs 1200A/µs 1600A/µs 2000A/µs 800A/µs 1200A/µs 1600A/µs 2000A/µs diF/dt, DIODE CURRENT SLOPE Figure 25. Typical reverse recovery current as a function of diode current slope (VR=600V, IF=25A, Dynamic test circuit in Figure E) IFAG IPC TD VLS 11 diF/dt, DIODE CURRENT SLOPE Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=600V, IF=25A, Dynamic test circuit in Figure E) Rev. 2.2 12.06.2013 IKW25N120T2 ® TrenchStop 2 nd generation Series 100A 2.5V TJ=25°C 80A IF=50A VF, FORWARD VOLTAGE IF, FORWARD CURRENT 175°C 60A 40A 2.0V 25A 1.5V 12.5A 1.0V 3A 20A 0.5V 0A 0V 1V 2V 0.0V 3V VF, FORWARD VOLTAGE Figure 27. Typical diode forward current as a function of forward voltage IFAG IPC TD VLS 12 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 28. Typical diode forward voltage as a function of junction temperature Rev. 2.2 12.06.2013 IKW25N120T2 ® TrenchStop 2 IFAG IPC TD VLS 13 nd generation Series Rev. 2.2 12.06.2013 IKW25N120T2 ® TrenchStop 2 nd generation Series i,v tr r =tS +tF diF /dt Qr r =QS +QF tr r IF tS QS Ir r m tF QF 10% Ir r m dir r /dt 90% Ir r m t VR Figure C. Definition of diodes switching characteristics 1 2 r1 r2 n rn Tj (t) p(t) r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Figure B. Definition of switching losses IFAG IPC TD VLS 14 Rev. 2.2 12.06.2013 IKW25N120T2 ® TrenchStop 2 nd generation Series Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. IFAG IPC TD VLS 15 Rev. 2.2 12.06.2013