IKW25T120

IKW25T120 ® TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C            Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP314D Short circuit withstand time – 10s Designed for : - Frequency Converters - Uninterrupted Power Supply ® TrenchStop and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Very soft, fast recovery anti-parallel Emitter Controlled HE diode 1 Qualified according to JEDEC for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type IKW25T120 G E PG-TO-247-3 VCE IC VCE(sat),Tj=25°C Tj,max Marking Code Package 1200V 25A 1.7V 150C K25T120 PG-TO-247-3 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V DC collector current TC = 25C TC = 100C IC Pulsed collector current, tp limited by Tjmax ICpul s 75 Turn off safe operating area - 75 A 50 25 VCE  1200V, Tj  150C IF Diode forward current TC = 25C 50 TC = 100C 25 Diode pulsed current, tp limited by Tjmax IFpul s 75 Gate-emitter voltage VGE 20 V tSC 10 s Ptot 190 W C 2) Short circuit withstand time VGE = 15V, VCC  1200V, Tj  150C Power dissipation TC = 25C Operating junction temperature Tj -40...+150 Storage temperature Tstg -55...+150 1 2) J-STD-020 and JESD-022 Allowed number of short circuits: 1s. IFAG IPC TD VLS 1 Rev. 2.3 12.06.2013 IKW25T120 ® TrenchStop Series Soldering temperature, 1.6mm (0.063 in.) from case for 10s IFAG IPC TD VLS 2 - 260 Rev. 2.3 12.06.2013 IKW25T120 ® TrenchStop Series Thermal Resistance Parameter Symbol Conditions Max. Value Unit RthJC 0.65 K/W RthJCD 1.0 RthJA 40 Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Value min. typ. max. 1200 - - T j =2 5 C - 1.7 2.2 T j =1 2 5 C - 2.0 - T j =1 5 0 C - 2.2 - T j =2 5 C - 1.7 2.2 T j =1 2 5 C - 1.7 - T j =1 5 0 C - 1.7 - 5.0 5.8 6.5 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V , I C = 5 00 A Collector-emitter saturation voltage VCE(sat) Diode forward voltage VF V V G E = 15 V , I C = 25 A V G E = 0V , I F = 2 5 A Gate-emitter threshold voltage VGE(th) I C = 1m A, VCE=VGE Zero gate voltage collector current ICES V C E = 12 0 0V , V G E = 0V mA T j =2 5 C - - 0.25 T j =1 5 0 C - - 2.5 Gate-emitter leakage current IGES V C E = 0V , V G E =2 0 V - - 600 nA Transconductance gfs V C E = 20 V , I C = 25 A - 16 - S Integrated gate resistor RGint IFAG IPC TD VLS 8 3 Ω Rev. 2.3 12.06.2013 IKW25T120 ® TrenchStop Series Dynamic Characteristic Input capacitance Ciss V C E = 25 V , - 1860 - Output capacitance Coss V G E = 0V , - 96 - Reverse transfer capacitance Crss f= 1 MH z - 82 - Gate charge QGate V C C = 96 0 V, I C =2 5 A - 155 - nC - 13 - nH - 150 - A pF V G E = 15 V LE Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 1) IC(SC) V G E = 15 V ,t S C  10 s V C C = 6 0 0 V, T j = 25  C Switching Characteristic, Inductive Load, at Tj=25 C Parameter Symbol Conditions Value min. typ. max. - 50 - - 30 - - 560 - - 70 - - 2.0 - - 2.2 - - 4.2 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j =2 5 C , V C C = 60 0 V, I C = 2 5 A V G E = 0/ 15 V , R G = 22 , 2) L  =1 8 0n H, 2) C  = 3 9p F Energy losses include “tail” and diode reverse recovery. Diode reverse recovery time trr T j =2 5 C , - 200 Diode reverse recovery charge Qrr V R = 6 00 V , I F = 2 5 A, - 2.3 µC Diode peak reverse recovery current Irrm d i F / d t =8 0 0 A/ s - 21 A Diode peak rate of fall of reverse recovery current during t b d i r r /d t - 390 ns mJ Anti-Parallel Diode Characteristic 1) 2) - ns A/s Allowed number of short circuits: 1s. Leakage inductance L  a nd Stray capacity C  due to dynamic test circuit in Figure E. IFAG IPC TD VLS 4 Rev. 2.3 12.06.2013 IKW25T120 ® TrenchStop Series Switching Characteristic, Inductive Load, at Tj=150 C Parameter Symbol Conditions Value min. typ. max. - 50 - - 32 - - 660 - - 130 - - 3.0 - - 4.0 - - 7.0 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j =1 5 0 C V C C = 60 0 V, I C = 2 5 A, V G E = 0/ 15 V , R G = 2 2 , 1) L  =1 8 0n H, 1) C  = 3 9p F Energy losses include “tail” and diode reverse recovery. Diode reverse recovery time trr T j =1 5 0 C - 320 - ns Diode reverse recovery charge Qrr V R = 6 00 V , I F = 2 5 A, - 5.2 - µC Diode peak reverse recovery current Irrm d i F / d t =8 0 0 A/ s - 29 - A Diode peak rate of fall of reverse recovery current during t b d i r r /d t - 320 ns mJ Anti-Parallel Diode Characteristic 1) A/s Leakage inductance L  a nd Stray capacity C  due to dynamic test circuit in Figure E. IFAG IPC TD VLS 5 Rev. 2.3 12.06.2013 IKW25T120 ® TrenchStop Series tp=3µs 60A TC=80°C IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 70A 50A 40A TC=110°C 30A 20A 10A Ic 10µs 10A 50µs 150µs 1A 500µs Ic 20ms DC 0A 10Hz 100Hz 1kHz 10kHz 0,1A 1V 100kHz f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj  150C, D = 0.5, VCE = 600V, VGE = 0/+15V, RG = 22) 10V 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C;VGE=15V) 150W IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 40A 100W 50W 0W 25°C 30A 20A 10A 50°C 75°C 100°C 0A 25°C 125°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj  150C) IFAG IPC TD VLS 75°C 125°C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE  15V, Tj  150C) 6 Rev. 2.3 12.06.2013 IKW25T120 ® TrenchStop Series 70A 60A VGE=17V 50A 15V 40A 11V IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 60A 70A 13V 9V 30A 7V 20A 10A 50A 15V 40A 11V 13V 9V 30A 7V 20A 10A 0A 0A 0V 1V 2V 3V 4V 5V 6V 0V 70A 60A 50A 40A 30A 20A TJ=150°C 25°C 10A 0A 0V 2V 4V 6V 8V 10V 12V VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) IFAG IPC TD VLS 1V 2V 3V 4V 5V 6V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 150°C) VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) IC, COLLECTOR CURRENT VGE=17V 3,0V IC=50A 2,5V 2,0V IC=25A 1,5V IC=15A IC=8A 1,0V 0,5V 0,0V -50°C 0°C 50°C 100°C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 7 Rev. 2.3 12.06.2013 IKW25T120 ® TrenchStop Series td(off) tf t, SWITCHING TIMES t, SWITCHING TIMES td(off) 100ns td(on) 10ns tf 100 ns td(on) tr 10 ns tr 1ns 0A 10A 20A 30A 1 ns 40A IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=150°C, VCE=600V, VGE=0/15V, RG=22Ω, Dynamic test circuit in Figure E) VGE(th), GATE-EMITT TRSHOLD VOLTAGE t, SWITCHING TIMES 100ns tf td(on) tr 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=25A, RG=22Ω, Dynamic test circuit in Figure E) IFAG IPC TD VLS    7V 6V max. 5V typ. 4V min. 3V 2V 1V 0V -50°C 10ns 50°C  RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=150°C, VCE=600V, VGE=0/15V, IC=25A, Dynamic test circuit in Figure E) td(off) 0°C  0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 1.0mA) 8 Rev. 2.3 12.06.2013 IKW25T120 ® TrenchStop Series *) Eon and Etsinclude losses due to diode recovery E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES 14,0mJ *) Eon and Ets include losses due to diode recovery 12,0mJ 10,0mJ 8,0mJ 6,0mJ Ets* 4,0mJ Eoff 8 mJ Ets* 6 mJ Eoff 4 mJ Eon* 2 mJ 2,0mJ Eon* 0,0mJ 10A 20A 30A 0 mJ 40A IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=150°C, VCE=600V, VGE=0/15V, RG=22Ω, Dynamic test circuit in Figure E) *) Eon and Ets include losses due to diode recovery 10mJ 6mJ 5mJ 4mJ Ets* 3mJ Eoff 2mJ Eon* 0mJ *) Eon and Ets include losses due to diode recovery 7mJ 6mJ 5mJ 4mJ Ets* 3mJ 2mJ Eoff Eon* 0mJ 400V 150°C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=25A, RG=22Ω, Dynamic test circuit in Figure E) IFAG IPC TD VLS  8mJ 1mJ 100°C  9mJ 1mJ 50°C  RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=150°C, VCE=600V, VGE=0/15V, IC=25A, Dynamic test circuit in Figure E) E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES 7mJ  500V 600V 700V 800V VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ=150°C, VGE=0/15V, IC=25A, RG=22Ω, Dynamic test circuit in Figure E) 9 Rev. 2.3 12.06.2013 IKW25T120 ® TrenchStop Series 15V 240V c, CAPACITANCE VGE, GATE-EMITTER VOLTAGE Ciss 1nF 960V 10V Crss 5V 0V 10pF 0nC 50nC 100nC 150nC 0V 200nC 15µs 10µs 5µs 0µs 12V 14V 20V 200A 150A 100A 50A 0A 16V VGE, GATE-EMITTETR VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25°C) IFAG IPC TD VLS 10V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) IC(sc), short circuit COLLECTOR CURRENT QGE, GATE CHARGE Figure 17. Typical gate charge (IC=25 A) tSC, SHORT CIRCUIT WITHSTAND TIME Coss 100pF 12V 14V 16V 18V VGE, GATE-EMITTETR VOLTAGE Figure 20. Typical short circuit collector current as a function of gateemitter voltage (VCE  600V, Tj  150C) 10 Rev. 2.3 12.06.2013 IKW25T120 ® 600V VCE 60A 400V 40A 200V 20A IC, COLLECTOR CURRENT VCE, COLLECTOR-EMITTER VOLTAGE TrenchStop Series 400V 200V VCE 0.5us 0us 1us 1.5us ZthJC, TRANSIENT THERMAL RESISTANCE 0.2 0.1 0.05 -2 10 K/W R,(K/W) 0.229 0.01 0.192 single pulse 0.174 0.055 R1 , (s) 1.10*10-1 1.56*10-2 1.35*10-3 1.52*10-4 R2 C 1 =  1 /R 1 1us 1.5us 0 10 K/W D=0.5 0.2 0.1 R,(K/W) 0.282 0.317 0.294 0.107 -1 10 K/W 0.05 0.02 R1 , (s) 1.01*10-1 1.15*10-2 1.30*10-3 1.53*10-4 R2 0.01 single pulse C 2 =  2 /R 2 -3 10 K/W 10µs 0.5us t, TIME Figure 22. Typical turn off behavior (VGE=15/0V, RG=22Ω, Tj = 150C, Dynamic test circuit in Figure E) D=0.5 0.02 0V 0A 0us t, TIME Figure 21. Typical turn on behavior (VGE=0/15V, RG=22Ω, Tj = 150C, Dynamic test circuit in Figure E) ZthJC, TRANSIENT THERMAL RESISTANCE 40A 20A 0A -1 600V IC IC 0V 10 K/W 60A C 1 =  1 /R 1 C 2 =  2 /R 2 10ms 100ms -2 100µs 1ms 10ms 10 K/W 10µs 100ms tP, PULSE WIDTH Figure 23. IGBT transient thermal resistance (D = tp / T) IFAG IPC TD VLS 100µs 1ms tP, PULSE WIDTH Figure 24. Diode transient thermal impedance as a function of pulse width (D=tP/T) 11 Rev. 2.3 12.06.2013 IKW25T120 ® TrenchStop Series Qrr, REVERSE RECOVERY CHARGE trr, REVERSE RECOVERY TIME 500ns 400ns 300ns 200ns TJ=150°C 100ns TJ=25°C 0ns 400A/µs 600A/µs 800A/µs TJ=150°C 25A TJ=25°C 20A 15A 10A 5A 0A 400A/µs 600A/µs 800A/µs 2µC TJ=25°C 1µC 600A/µs 800A/µs 1000A/µs TJ=25°C -400A/µs TJ=150°C -300A/µs -200A/µs -100A/µs -0A/µs 400A/µs 1000A/µs diF/dt, DIODE CURRENT SLOPE Figure 25. Typical reverse recovery current as a function of diode current slope (VR=600V, IF=25A, Dynamic test circuit in Figure E) IFAG IPC TD VLS 3µC diF/dt, DIODE CURRENT SLOPE Figure 24. Typical reverse recovery charge as a function of diode current slope (VR=600V, IF=25A, Dynamic test circuit in Figure E) dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT Irr, REVERSE RECOVERY CURRENT diF/dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as a function of diode current slope (VR=600V, IF=25A, Dynamic test circuit in Figure E) 30A 4µC 0µC 400A/µs 1000A/µs TJ=150°C 5µC 600A/µs 800A/µs 1000A/µs diF/dt, DIODE CURRENT SLOPE Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=600V, IF=25A, Dynamic test circuit in Figure E) 12 Rev. 2.3 12.06.2013 IKW25T120 ® TrenchStop Series TJ=25°C 150°C 2,0V VF, FORWARD VOLTAGE IF, FORWARD CURRENT 60A 40A 20A IF=50A 1,5V 25A 15A 8A 1,0V 0,5V 0A 0,0V 0V 1V 2V VF, FORWARD VOLTAGE Figure 27. Typical diode forward current as a function of forward voltage IFAG IPC TD VLS -50°C 0°C 50°C 100°C TJ, JUNCTION TEMPERATURE Figure 28. Typical diode forward voltage as a function of junction temperature 13 Rev. 2.3 12.06.2013 IKW25T120 ® TrenchStop Series IFAG IPC TD VLS 14 Rev. 2.3 12.06.2013 IKW25T120 ® TrenchStop Series i,v tr r =tS +tF diF /dt Qr r =QS +QF tr r IF tS QS Ir r m tF QF 10% Ir r m dir r /dt 90% Ir r m t VR Figure C. Definition of diodes switching characteristics 1 2 r1 n r2 rn Tj (t) p(t) r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance L =180nH an d Stray capacity C  =39pF. Figure B. Definition of switching losses IFAG IPC TD VLS 15 Rev. 2.3 12.06.2013 IKW25T120 ® TrenchStop Series Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. IFAG IPC TD VLS 16 Rev. 2.3 12.06.2013