IKW40N120H3

IGBT HighspeedDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fastrecovery anti-paralleldiode IKW40N120H3 1200Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl IKW40N120H3 Highspeedswitchingseriesthirdgeneration HighspeedDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fast recoveryanti-paralleldiode  Features: C TRENCHSTOPTMtechnologyoffering •verylowVCEsat •lowEMI •Verysoft,fastrecoveryanti-paralleldiode •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •completeproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E Applications: •uninterruptiblepowersupplies •weldingconverters •converterswithhighswitchingfrequency G C E KeyPerformanceandPackageParameters Type IKW40N120H3 VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 1200V 40A 2.05V 175°C K40H1203 PG-TO247-3 2 Rev.2.1,2014-11-26 IKW40N120H3 Highspeedswitchingseriesthirdgeneration TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 3 Rev.2.1,2014-11-26 IKW40N120H3 Highspeedswitchingseriesthirdgeneration MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=100°C IC 80.0 40.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 160.0 A TurnoffsafeoperatingareaVCE≤1200V,Tvj≤175°C - 160.0 A Diodeforwardcurrent,limitedbyTvjmax TC=25°C TC=100°C IF 40.0 20.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 160.0 A Gate-emitter voltage VGE ±20 V Short circuit withstand time VGE=15.0V,VCC≤600V Allowed number of short circuits < 1000 Time between short circuits: ≥ 1.0s Tvj=175°C tSC PowerdissipationTC=25°C PowerdissipationTC=100°C Ptot 483.0 220.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C µs 10 Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s °C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit IGBT thermal resistance, junction - case Rth(j-c) 0.31 K/W Diode thermal resistance, junction - case Rth(j-c) 1.11 K/W Thermal resistance junction - ambient Rth(j-a) 40 K/W 4 Rev.2.1,2014-11-26 IKW40N120H3 Highspeedswitchingseriesthirdgeneration ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 1200 - - VGE=15.0V,IC=40.0A Tvj=25°C Tvj=125°C Tvj=175°C - 2.05 2.50 2.70 2.40 - VF VGE=0V,IF=20.0A Tvj=25°C Tvj=175°C - 1.80 1.85 2.35 - Diode forward voltage VF VGE=0V,IF=40.0A Tvj=25°C Tvj=125°C Tvj=175°C - 2.40 2.60 2.60 3.05 - Gate-emitter threshold voltage VGE(th) IC=1.00mA,VCE=VGE 5.0 5.8 6.5 Zero gate voltage collector current ICES VCE=1200V,VGE=0V Tvj=25°C Tvj=175°C - - Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 600 nA Transconductance gfs VCE=20V,IC=15.0A - 20.0 - S StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA Collector-emitter saturation voltage VCEsat Diode forward voltage V V V V V 250.0 µA 2500.0 ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 2330 - - 185 - - 130 - - 185.0 - nC - 13.0 - nH - A DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE Short circuit collector current Max. 1000 short circuits IC(SC) Time between short circuits: ≥ 1.0s VCE=25V,VGE=0V,f=1MHz VCC=960V,IC=40.0A, VGE=15V VGE=15.0V,VCC≤600V, tSC≤10µs Tvj=175°C 5 - 139 pF Rev.2.1,2014-11-26 IKW40N120H3 Highspeedswitchingseriesthirdgeneration SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 30 - ns - 57 - ns - 290 - ns - 16 - ns - 3.20 - mJ - 1.20 - mJ - 4.40 - mJ - 355 - ns - 1.90 - µC - 12.8 - A - -150 - A/µs IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=25°C, VCC=600V,IC=40.0A, VGE=0.0/15.0V, RG(on)=12.0Ω,RG(off)=12.0Ω, Lσ=70nH,Cσ=67pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=25°C, VR=600V, IF=40.0A, diF/dt=500A/µs dirr/dt SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 29 - ns - 49 - ns - 366 - ns - 48 - ns - 4.40 - mJ - 2.60 - mJ - 7.00 - mJ - 639 - ns - 4.30 - µC - 16.0 - A - -105 - A/µs IGBTCharacteristic,atTvj=175°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=175°C, VCC=600V,IC=40.0A, VGE=0.0/15.0V, RG(on)=12.0Ω,RG(off)=12.0Ω, Lσ=70nH,Cσ=67pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. DiodeCharacteristic,atTvj=175°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=175°C, VR=600V, IF=40.0A, diF/dt=500A/µs dirr/dt 6 Rev.2.1,2014-11-26 IKW40N120H3 Highspeedswitchingseriesthirdgeneration 160 100 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 140 120 100 80 60 TC=80° 40 tp=1µs 10µs 10 50µs 100µs 200µs 500µs 1 DC TC=110° TC=80° 20 TC=110° 0 1 10 100 0.1 1000 1 f,SWITCHINGFREQUENCY[kHz] 10 100 1000 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 1. Collectorcurrentasafunctionofswitching frequency (Tj≤175°C,D=0.5,VCE=600V,VGE=15/0V, rG=12Ω) Figure 2. Forwardbiassafeoperatingarea (D=0,TC=25°C,Tj≤175°C;VGE=15V) 500 80 IC,COLLECTORCURRENT[A] Ptot,POWERDISSIPATION[W] 400 300 200 60 40 20 100 0 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[°C] 25 50 75 100 125 150 175 TC,CASETEMPERATURE[°C] Figure 3. Powerdissipationasafunctionofcase temperature (Tj≤175°C) Figure 4. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tj≤175°C) 7 Rev.2.1,2014-11-26 IKW40N120H3 Highspeedswitchingseriesthirdgeneration 140 180 160 VGE=20V 120 15V 100 13V 11V 80 9V 7V 60 17V 140 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 17V VGE=20V 5V 40 15V 120 13V 11V 100 9V 80 7V 5V 60 40 20 0 20 0 1 2 3 4 5 0 6 0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tj=25°C) 6 8 5.0 VCE(sat),COLLECTOR-EMITTERSATURATION[V] Tj=25°C Tj=175°C IC,COLLECTORCURRENT[A] 4 Figure 6. Typicaloutputcharacteristic (Tj=175°C) 150 100 50 0 2 VCE,COLLECTOR-EMITTERVOLTAGE[V] 5 10 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 15 VGE,GATE-EMITTERVOLTAGE[V] IC=20A IC=40A IC=80A 0 25 50 75 100 125 150 175 Tj,JUNCTIONTEMPERATURE[°C] Figure 7. Typicaltransfercharacteristic (VCE=20V) Figure 8. Typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 8 Rev.2.1,2014-11-26 IKW40N120H3 Highspeedswitchingseriesthirdgeneration 1000 1000 td(off) tf td(on) tr t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] td(off) tf td(on) tr 100 10 5 15 25 35 45 55 65 100 10 75 0 10 IC,COLLECTORCURRENT[A] Figure 9. Typicalswitchingtimesasafunctionof collectorcurrent (ind.load,Tj=175°C,VCE=600V,VGE=15/0V, rG=12Ω,testcircuitinFig.E) 40 7 VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] td(off) tf td(on) tr t,SWITCHINGTIMES[ns] 30 Figure 10. Typicalswitchingtimesasafunctionofgate resistor (ind.load,Tj=175°C,VCE=600V,VGE=15/0V, IC=40A,testcircuitinFig.E) 1000 100 10 20 rG,GATERESISTOR[Ω] 25 50 75 100 125 150 typ. min. max. 6 5 4 3 2 175 Tj,JUNCTIONTEMPERATURE[°C] 0 25 50 75 100 125 150 175 Tj,JUNCTIONTEMPERATURE[°C] Figure 11. Typicalswitchingtimesasafunctionof junctiontemperature (ind.load,VCE=600V,VGE=15/0V,IC=40A, rG=12Ω,testcircuitinFig.E) Figure 12. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=1mA) 9 Rev.2.1,2014-11-26 IKW40N120H3 Highspeedswitchingseriesthirdgeneration 20 12 Eoff Eon Ets Eoff Eon Ets E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 18 16 14 12 10 8 6 4 10 8 6 4 2 2 0 5 15 25 35 45 55 65 0 75 0 10 IC,COLLECTORCURRENT[A] Figure 13. Typicalswitchingenergylossesasa functionofcollectorcurrent (ind.load,Tj=175°C,VCE=600V,VGE=15/0V, rG=12Ω,testcircuitinFig.E) 40 10 Eoff Eon Ets E,SWITCHINGENERGYLOSSES[mJ] Eoff Eon Ets E,SWITCHINGENERGYLOSSES[mJ] 30 Figure 14. Typicalswitchingenergylossesasa functionofgateresistor (ind.load,Tj=175°C,VCE=600V,VGE=15/0V, IC=40A,testcircuitinFig.E) 8 6 4 2 0 20 rG,GATERESISTOR[Ω] 25 50 75 100 125 150 8 6 4 2 0 400 175 Tj,JUNCTIONTEMPERATURE[°C] 500 600 700 800 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 15. Typicalswitchingenergylossesasa functionofjunctiontemperature (indload,VCE=600V,VGE=15/0V,IC=40A, rG=12Ω,testcircuitinFig.E) Figure 16. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (ind.load,Tj=175°C,VGE=15/0V,IC=40A, rG=12Ω,testcircuitinFig.E) 10 Rev.2.1,2014-11-26 IKW40N120H3 Highspeedswitchingseriesthirdgeneration 16 240V 960V 12 1000 C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 14 10 8 6 Cies Coes Cres 100 4 2 0 0 40 80 120 160 10 200 0 QGE,GATECHARGE[nC] Figure 17. Typicalgatecharge (IC=40A) 30 50 tSC,SHORTCIRCUITWITHSTANDTIME[µs] IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A] 20 Figure 18. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) 300 250 200 150 100 50 10 VCE,COLLECTOR-EMITTERVOLTAGE[V] 10 12 14 16 40 30 20 10 0 18 VGE,GATE-EMITTERVOLTAGE[V] 10 12 14 16 18 20 VGE,GATE-EMITTERVOLTAGE[V] Figure 19. Typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage (VCE≤600V,startatTj=25°C) Figure 20. Shortcircuitwithstandtimeasafunctionof gate-emittervoltage (VCE≤600V,startatTj≤150°C) 11 Rev.2.1,2014-11-26 IKW40N120H3 D=0.5 0.1 1 ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W] ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W] Highspeedswitchingseriesthirdgeneration 0.2 0.1 0.05 0.02 0.01 single pulse 0.01 D=0.5 0.2 0.1 0.05 0.1 0.02 0.01 single pulse 0.01 i: 1 2 3 4 ri[K/W]: 0.06414 0.074055 0.162315 10.0E-3 τi[s]: 3.7E-4 3.9E-3 0.01916724 0.3399433 0.001 1E-6 1E-5 1E-4 0.001 0.01 0.1 i: 1 2 3 4 ri[K/W]: 0.290775 0.43377 0.363015 0.02781 τi[s]: 2.7E-4 2.6E-3 0.01477471 0.1784607 0.001 1E-6 1 1E-5 tp,PULSEWIDTH[s] 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 21. IGBTtransientthermalimpedance (D=tp/T) Figure 22. Diodetransientthermalimpedanceasa functionofpulsewidth (D=tp/T) 800 Tj=25°C, IF = 40A Tj=175°C, IF = 40A 4 Qrr,REVERSERECOVERYCHARGE[µC] trr,REVERSERECOVERYTIME[ns] 700 600 500 400 300 200 200 400 600 800 Tj=25°C, IF = 40A Tj=175°C, IF = 40A 3 2 1 0 200 1000 diF/dt,DIODECURRENTSLOPE[A/µs] 400 600 800 1000 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 23. Typicalreverserecoverytimeasafunction ofdiodecurrentslope (VR=600V) 12 Figure 24. Typicalreverserecoverychargeasa functionofdiodecurrentslope (VR=600V) Rev.2.1,2014-11-26 IKW40N120H3 Highspeedswitchingseriesthirdgeneration 22 0 Tj=25°C, IF = 40A Tj=175°C, IF = 40A Tj=25°C, IF = 40A Tj=175°C, IF = 40A -50 dIrr/dt,diodepeakrateoffallofIrr[A/µs] Irr,REVERSERECOVERYCURRENT[A] 20 18 16 14 12 10 -100 -150 -200 -250 8 6 200 400 600 800 -300 200 1000 diF/dt,DIODECURRENTSLOPE[A/µs] 400 600 800 1000 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 25. Typicalreverserecoverycurrentasa functionofdiodecurrentslope (VR=600V) Figure 26. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=600V) 4.0 Tj=25°C Tj=175°C 120 IF=10A IF=20A IF=40A 3.5 VF,FORWARDVOLTAGE[V] IF,FORWARDCURRENT[A] 100 80 60 40 2.5 2.0 1.5 20 0 3.0 0 1 2 3 1.0 4 VF,FORWARDVOLTAGE[V] 0 25 50 75 100 125 150 175 Tj,JUNCTIONTEMPERATURE[°C] Figure 27. Typicaldiodeforwardcurrentasafunction offorwardvoltage 13 Figure 28. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature Rev.2.1,2014-11-26 IKW40N120H3 Highspeedswitchingseriesthirdgeneration PG-TO247-3 14 Rev.2.1,2014-11-26 IKW40N120H3 Highspeedswitchingseriesthirdgeneration vGE(t) I,V 90% VGE dI/dt a a 10% VGE b b t IC(t) dI 90% IC 90% IC 10% IC 10% IC Figure C. t vCE(t) t td(off) tf t tr td(on) Figure A. vGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t vCE(t) Figure E. t2 E off = t4 VCE x IC x dt E t1 t1 parasitic relief on = VCE x IC x dt 2% VCE t3 t2 t3 t4 t Figure B. 15 Rev.2.1,2014-11-26 IKW40N120H3 Highspeedswitchingseriesthirdgeneration RevisionHistory IKW40N120H3 Revision:2014-11-26,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 1.1 2009-12-03 - 1.2 2010-02-10 - 2.1 2014-11-26 Final data sheet WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? Yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. Pleasesendyourproposal(includingareferencetothisdocument)to:erratum@infineon.com Publishedby InfineonTechnologiesAG 81726Munich,Germany 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin question,pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support, automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe endangered. 16 Rev.2.1,2014-11-26