IKW40N60H3

IGBT HighspeedDuoPackIGBTinTrenchandFieldstoptechnologywithsoft,fastrecovery anti-paralleldiode IKW40N60H3 600VDuoPackIGBTandDiode Highspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl IKW40N60H3 Highspeedswitchingseriesthirdgeneration HighspeedDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fast recoveryanti-paralleldiode  Features: C TRENCHSTOPTMtechnologyoffering •verylowVCEsat •lowEMI •Verysoft,fastrecoveryanti-paralleldiode •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •completeproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E Applications: •uninterruptiblepowersupplies •weldingconverters •converterswithhighswitchingfrequency G C E KeyPerformanceandPackageParameters Type IKW40N60H3 VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 600V 40A 1.95V 175°C K40H603 PG-TO247-3 2 Rev.2.4,2014-03-12 IKW40N60H3 Highspeedswitchingseriesthirdgeneration TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 3 Rev.2.4,2014-03-12 IKW40N60H3 Highspeedswitchingseriesthirdgeneration Maximumratings Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 600 V DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=100°C IC 80.0 40.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 160.0 A Turn off safe operating area VCE≤600V,Tvj≤175°C,tp=1µs - 160.0 A Diodeforwardcurrent,limitedbyTvjmax TC=25°C TC=100°C IF 40.0 20.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 160.0 A Gate-emitter voltage VGE ±20 V Short circuit withstand time VGE=15.0V,VCC≤400V Allowed number of short circuits < 1000 Time between short circuits: ≥ 1.0s Tvj=150°C tSC PowerdissipationTC=25°C PowerdissipationTC=100°C Ptot 306.0 153.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C µs 5 Soldering temperature, wave soldering 1.6 mm (0.063 in.) from case for 10s °C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit IGBT thermal resistance, junction - case Rth(j-c) 0.49 K/W Diode thermal resistance, junction - case Rth(j-c) 1.50 K/W Thermal resistance junction - ambient Rth(j-a) 40 K/W 4 Rev.2.4,2014-03-12 IKW40N60H3 Highspeedswitchingseriesthirdgeneration ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. 600 - - VGE=15.0V,IC=40.0A Tvj=25°C Tvj=125°C Tvj=175°C - 1.95 2.30 2.50 2.40 - - 1.65 1.67 1.65 2.05 - 4.1 5.1 5.7 Unit StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=2.00mA Collector-emitter saturation voltage VCEsat V V Diode forward voltage VF VGE=0V,IF=20.0A Tvj=25°C Tvj=125°C Tvj=175°C Gate-emitter threshold voltage VGE(th) IC=0.58mA,VCE=VGE Zero gate voltage collector current ICES VCE=600V,VGE=0V Tvj=25°C Tvj=175°C - - Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=40.0A - 24.0 - S V V 40.0 µA 3000.0 ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 2190 - - 112 - - 64 - - 223.0 - nC - 13.0 - nH - A DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE Short circuit collector current Max. 1000 short circuits IC(SC) Time between short circuits: ≥ 1.0s VCE=25V,VGE=0V,f=1MHz VCC=480V,IC=40.0A, VGE=15V VGE=15.0V,VCC≤400V, tSC≤5µs Tvj=150°C 5 - pF 235 Rev.2.4,2014-03-12 IKW40N60H3 Highspeedswitchingseriesthirdgeneration SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 19 - ns - 33 - ns - 197 - ns - 21 - ns - 1.10 - mJ - 0.58 - mJ - 1.68 - mJ - 124 - ns - 0.81 - µC - 13.6 - A - -332 - A/µs IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=25°C, VCC=400V,IC=40.0A, VGE=0.0/15.0V, rG=7.9Ω,Lσ=90nH, Cσ=60pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. Tvj=25°C, VR=400V, IF=20.0A, diF/dt=1000A/µs dirr/dt SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 19 - ns - 29 - ns - 227 - ns - 22 - ns - 1.33 - mJ - 0.79 - mJ - 2.12 - mJ - 190 - ns - 1.70 - µC - 18.5 - A - -290 - A/µs IGBTCharacteristic,atTvj=175°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=175°C, VCC=400V,IC=40.0A, VGE=0.0/15.0V, rG=7.9Ω,Lσ=90nH, Cσ=60pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. Tvj=175°C, VR=400V, IF=20.0A, diF/dt=1000A/µs dirr/dt 6 Rev.2.4,2014-03-12 IKW40N60H3 Highspeedswitchingseriesthirdgeneration 120 100 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 100 80 60 40 TC=80° tp=1µs 10 10µs 50µs 100µs 200µs 1 500µs TC=110° 20 DC TC=80° TC=110° 0 1 10 100 0.1 1000 1 f,SWITCHINGFREQUENCY[kHz] 10 100 1000 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 1. Collectorcurrentasafunctionofswitching frequency (Tj≤175°C,D=0.5,VCE=400V,VGE=15/0V, rG=7,9Ω) Figure 2. Forwardbiassafeoperatingarea (D=0,TC=25°C,Tj≤175°C;VGE=15V) 325 80 300 70 250 IC,COLLECTORCURRENT[A] Ptot,POWERDISSIPATION[W] 275 225 200 175 150 125 100 75 50 60 50 40 30 20 10 25 0 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[°C] 25 50 75 100 125 150 175 TC,CASETEMPERATURE[°C] Figure 3. Powerdissipationasafunctionofcase temperature (Tj≤175°C) Figure 4. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tj≤175°C) 7 Rev.2.4,2014-03-12 IKW40N60H3 Highspeedswitchingseriesthirdgeneration 160 120 VGE=21V 140 VGE=21V 100 120 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 19V 17V 15V 100 13V 11V 80 9V 60 7V 5V 40 19V 17V 80 15V 13V 11V 60 9V 7V 40 5V 20 20 0 0 1 2 3 4 0 5 0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tj=25°C) 3 4 5 4.0 VCE(sat),COLLECTOR-EMITTERSATURATION[V] Tj=25°C Tj=175°C 120 IC,COLLECTORCURRENT[A] 2 Figure 6. Typicaloutputcharacteristic (Tj=175°C) 140 100 80 60 40 20 0 1 VCE,COLLECTOR-EMITTERVOLTAGE[V] 5 6 7 8 9 10 11 IC=20A IC=40A IC=80A 3.5 3.0 2.5 2.0 1.5 1.0 12 VGE,GATE-EMITTERVOLTAGE[V] 0 25 50 75 100 125 150 175 Tj,JUNCTIONTEMPERATURE[°C] Figure 7. Typicaltransfercharacteristic (VCE=20V) Figure 8. Typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 8 Rev.2.4,2014-03-12 IKW40N60H3 td(off) tf td(on) tr td(off) tf td(on) tr t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] Highspeedswitchingseriesthirdgeneration 100 10 10 20 30 40 50 60 70 100 10 80 0 5 IC,COLLECTORCURRENT[A] 10 15 20 25 rG,GATERESISTOR[Ω] Figure 9. Typicalswitchingtimesasafunctionof collectorcurrent (ind.load,Tj=175°C,VCE=400V,VGE=15/0V, rG=7,9Ω,testcircuitinFig.E) Figure 10. Typicalswitchingtimesasafunctionofgate resistor (ind.load,Tj=175°C,VCE=400V,VGE=15/0V, IC=40A,testcircuitinFig.E) td(off) tf td(on) tr 100 10 VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] t,SWITCHINGTIMES[ns] 6.0 25 50 75 100 125 150 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 175 Tj,JUNCTIONTEMPERATURE[°C] typ. min. max. 0 25 50 75 100 125 150 175 Tj,JUNCTIONTEMPERATURE[°C] Figure 11. Typicalswitchingtimesasafunctionof junctiontemperature (ind.load,VCE=400V,VGE=15/0V,IC=40A, rG=7,9Ω,testcircuitinFig.E) Figure 12. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0.58mA) 9 Rev.2.4,2014-03-12 IKW40N60H3 Highspeedswitchingseriesthirdgeneration 6 4.0 Eoff Eon Ets 3.5 5 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] Eoff Eon Ets 4 3 2 1 3.0 2.5 2.0 1.5 1.0 0.5 0 10 20 30 40 50 60 70 0.0 80 0 5 IC,COLLECTORCURRENT[A] Figure 13. Typicalswitchingenergylossesasa functionofcollectorcurrent (ind.load,Tj=175°C,VCE=400V,VGE=15/0V, rG=7,9Ω,testcircuitinFig.E) 20 25 3.0 Eoff Eon Ets E,SWITCHINGENERGYLOSSES[mJ] Eoff Eon Ets E,SWITCHINGENERGYLOSSES[mJ] 15 Figure 14. Typicalswitchingenergylossesasa functionofgateresistor (ind.load,Tj=175°C,VCE=400V,VGE=15/0V, IC=40A,testcircuitinFig.E) 2.5 2.0 1.5 1.0 0.5 0.0 10 rG,GATERESISTOR[Ω] 25 50 75 100 125 150 2.5 2.0 1.5 1.0 0.5 0.0 200 175 Tj,JUNCTIONTEMPERATURE[°C] 250 300 350 400 450 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 15. Typicalswitchingenergylossesasa functionofjunctiontemperature (indload,VCE=400V,VGE=15/0V,IC=40A, rG=7,9Ω,testcircuitinFig.E) Figure 16. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (ind.load,Tj=175°C,VGE=15/0V,IC=40A, rG=7,9Ω,testcircuitinFig.E) 10 Rev.2.4,2014-03-12 IKW40N60H3 Highspeedswitchingseriesthirdgeneration 16 120V 480V 1000 12 C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 14 10 8 6 Cies Coes Cres 100 4 2 0 0 50 100 150 200 10 250 0 QGE,GATECHARGE[nC] Figure 17. Typicalgatecharge (IC=40A) 20 30 Figure 18. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) 560 15 520 tSC,SHORTCIRCUITWITHSTANDTIME[µs] IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A] 10 VCE,COLLECTOR-EMITTERVOLTAGE[V] 480 440 400 360 320 280 240 200 160 12 9 6 3 120 80 10 12 14 16 18 0 20 VGE,GATE-EMITTERVOLTAGE[V] 10 11 12 13 14 15 VGE,GATE-EMITTERVOLTAGE[V] Figure 19. Typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage (VCE≤400V,startatTj=25°C) Figure 20. Shortcircuitwithstandtimeasafunctionof gate-emittervoltage (VCE≤400V,startatTj≤150°C) 11 Rev.2.4,2014-03-12 IKW40N60H3 D=0.5 0.2 0.1 1 ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W] ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W] Highspeedswitchingseriesthirdgeneration 0.1 0.05 0.02 0.01 single pulse 0.01 D=0.5 0.2 0.1 0.05 0.1 0.02 0.01 single pulse 0.01 i: 1 2 3 4 5 ri[K/W]: 0.02540725 0.09179841 0.1302573 0.1893012 0.0532358 τi[s]: 1.3E-5 1.3E-4 1.4E-3 0.01830399 0.1308576 0.001 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 i: 1 2 3 4 ri[K/W]: 0.3399738 0.4445632 0.5814618 0.1348257 τi[s]: 1.3E-4 1.5E-3 0.01821425 0.09207449 0.001 1E-7 1 tp,PULSEWIDTH[s] 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 21. IGBTtransientthermalimpedance (D=tp/T) Figure 22. Diodetransientthermalimpedanceasa functionofpulsewidth (D=tp/T) 250 2.5 Tj=25°C, IF = 40A Tj=175°C, IF = 40A Tj=25°C, IF = 40A Tj=175°C, IF = 40A Qrr,REVERSERECOVERYCHARGE[µC] trr,REVERSERECOVERYTIME[ns] 225 200 175 150 125 100 2.0 1.5 1.0 0.5 75 50 800 1000 1200 1400 1600 diF/dt,DIODECURRENTSLOPE[A/µs] 0.0 800 1000 1200 1400 1600 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 23. Typicalreverserecoverytimeasafunction ofdiodecurrentslope (VR=400V) 12 Figure 24. Typicalreverserecoverychargeasa functionofdiodecurrentslope (VR=400V) Rev.2.4,2014-03-12 IKW40N60H3 Highspeedswitchingseriesthirdgeneration 24 0 Tj=25°C, IF = 40A Tj=175°C, IF = 40A Tj=25°C, IF = 40A Tj=175°C, IF = 40A dIrr/dt,diodepeakrateoffallofIrr[A/µs] Irr,REVERSERECOVERYCURRENT[A] 22 20 18 16 14 12 -200 -400 -600 10 8 800 1000 1200 1400 -800 800 1600 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 25. Typicalreverserecoverycurrentasa functionofdiodecurrentslope (VR=400V) 1400 1600 2.50 Tj=25°C Tj=175°C IF=10A IF=20A IF=40A 2.25 VF,FORWARDVOLTAGE[V] 50 IF,FORWARDCURRENT[A] 1200 Figure 26. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=400V) 60 40 30 20 10 0 1000 diF/dt,DIODECURRENTSLOPE[A/µs] 2.00 1.75 1.50 1.25 0.0 0.5 1.0 1.5 2.0 2.5 1.00 3.0 VF,FORWARDVOLTAGE[V] 0 25 50 75 100 125 150 175 Tj,JUNCTIONTEMPERATURE[°C] Figure 27. Typicaldiodeforwardcurrentasafunction offorwardvoltage 13 Figure 28. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature Rev.2.4,2014-03-12 IKW40N60H3 Highspeedswitchingseriesthirdgeneration PG-TO247-3 14 Rev.2.4,2014-03-12 IKW40N60H3 Highspeedswitchingseriesthirdgeneration vGE(t) 90% VGE a a b b t iC(t) 90% IC 90% IC 10% IC 10% IC t vCE(t) t td(off) tf td(on) t tr vGE(t) 90% VGE 10% VGE t iC(t) 2% IC t vCE(t) 2% VCE t1 t2 t3 t4 t 15 Rev.2.4,2014-03-12 IKW40N60H3 Highspeedswitchingseriesthirdgeneration RevisionHistory IKW40N60H3 Revision:2014-03-12,Rev.2.4 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2010-06-14 Release of final datasheet 2.2 2010-10-14 Updated IGBT switching conditions 2.3 2013-12-10 New value ICES max limit at 175°C 2.4 2014-03-12 Max ratings Vce, Tvj ≥ 25°C WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? Yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. Pleasesendyourproposal(includingareferencetothisdocument)to:erratum@infineon.com Publishedby InfineonTechnologiesAG 81726Munich,Germany 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin question,pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support, automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe endangered. 16 Rev.2.4,2014-03-12