IKW50N60T

TrenchStop Series IKW50N60T q Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs Designed for : - Frequency Converters - Uninterrupted Power Supply Trench and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed - low VCE(sat) Positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Very soft, fast recovery anti-parallel EmCon HE diode Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type IKW50N60T G E P-TO-247-3-1 (TO-220AC) VCE IC VCE(sat),Tj=25°C Tj,max Marking Code Package Ordering Code 600V 50A 1.5V 175°C K50T60 TO-247 Q67040S4718 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE DC collector current, limited by Tjmax IC Value Unit 600 V A TC = 25°C 801) TC = 100°C 50 Pulsed collector current, tp limited by Tjmax ICpuls 150 Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C) - 150 Diode forward current, limited by Tjmax IF TC = 25°C 100 TC = 100°C 50 Diode pulsed current, tp limited by Tjmax IFpuls 150 Gate-emitter voltage VGE ±20 V tSC 5 µs Power dissipation TC = 25°C Ptot 333 W Operating junction temperature Tj -40...+175 °C Storage temperature Tstg -55...+175 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - Short circuit withstand time 2) VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C 1) 2) 260 Value limited by bond wire Allowed number of short circuits: 1s. Power Semiconductors 1 Rev. 2.1 Dec-04 IKW50N60T q TrenchStop Series Thermal Resistance Parameter Symbol Conditions Max. Value Unit RthJC TO-247 AC 0.45 K/W RthJCD TO-247 AC 0.8 RthJA TO-247 AC 40 Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. 600 - - T j = 25° C - 1.5 2 T j = 17 5° C - 1.9 - T j = 25° C - 1.65 2.05 T j = 17 5° C - 1.6 - 4.1 4.9 5.7 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V, I C = 0. 2mA Collector-emitter saturation voltage VCE(sat) Diode forward voltage VF V V G E = 15V, I C = 50A V G E = 0V, I F = 5 0 A Gate-emitter threshold voltage VGE(th) I C = 0. 8mA, V C E = V G E Zero gate voltage collector current ICES V C E = 600V , V G E = 0V µA T j = 25° C - - 40 T j = 17 5° C - - 1000 Gate-emitter leakage current IGES V C E = 0V ,V G E = 2 0V - - 100 nA Transconductance gfs V C E = 20V, I C = 50A - 31 - S Integrated gate resistor RGint - Ω Dynamic Characteristic Input capacitance Ciss Output capacitance V C E = 25V, - 3140 - Coss V G E = 0V, - 200 - Reverse transfer capacitance Crss f= 1 M Hz - 93 - Gate charge QGate V C C = 4 80V, I C = 50A - 310 - nC pF V G E = 1 5V Internal emitter inductance LE T O -247-3- 1 - 7 - nH IC(SC) V G E = 1 5V,t S C ≤5µs V C C = 400V, T j ≤ 150° C - 458.3 - A measured 5mm (0.197 in.) from case Short circuit collector current1) 1) Allowed number of short circuits: 1s. Power Semiconductors 2 Rev. 2.1 Dec-04 IKW50N60T q TrenchStop Series Switching Characteristic, Inductive Load, at Tj=25 °C Parameter Symbol Conditions Value min. Typ. max. - 26 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy ns - 1.4 - Ets T j = 25° C, V C C = 4 00V, I C = 50A, V G E = 0/ 1 5V , RG= 7 Ω, L σ 1 ) = 103nH, C σ 1 ) =39pF Energy losses include “tail” and diode reverse recovery. - 2.6 - Diode reverse recovery time trr T j = 25° C, - 143 - Diode reverse recovery charge Qrr V R = 4 00V, I F = 5 0A , - 1.8 - µC Diode peak reverse recovery current Irrm di F / dt = 12 80 A / µs - 27.7 - A Diode peak rate of fall of reverse recovery current during t b di r r / d t - 671 - A/µs - 29 - - 299 - - 29 - - 1.2 - mJ Anti-Parallel Diode Characteristic ns Switching Characteristic, Inductive Load, at Tj=175 °C Parameter Symbol Conditions Value min. Typ. max. - 27 - - 33 - - 341 - - 55 - - 1.8 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy ns - 1.8 - Ets T j = 17 5° C, V C C = 4 00V, I C = 50A, V G E = 0/ 1 5V , RG= 7 Ω L σ 1 ) = 103nH, C σ 1 ) =39pF Energy losses include “tail” and diode reverse recovery. - 3.6 - Diode reverse recovery time trr T j = 17 5° C - 205 - ns Diode reverse recovery charge Qrr V R = 4 00V, I F = 5 0A , - 4.3 - µC Diode peak reverse recovery current Irrm di F / dt = 12 80 A / µs - 40.7 - A Diode peak rate of fall of reverse recovery current during t b di r r / d t - 449 - A/µs mJ Anti-Parallel Diode Characteristic 1) Leakage inductance L σ and Stray capacity C σ due to dynamic test circuit in Figure E. Power Semiconductors 3 Rev. 2.1 Dec-04 IKW50N60T q TrenchStop Series 140A t p=2µs 100A 100A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 120A T C =80°C 80A T C =110°C 60A 40A 20A 0A 100H z Ic Ic 1kH z 10kH z 100kH z DC 10V 100V 10ms 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤175°C; VGE=15V) 80A IC, COLLECTOR CURRENT POWER DISSIPATION Ptot, 50µs 1ms 1V 300W 100W 10A 1A f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 175°C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 7Ω) 250W 10µs 200W 150W 60A 40A 20A 50W 0W 25°C 50°C 75°C 0A 25°C 100°C 125°C 150°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 175°C) Power Semiconductors 4 75°C 125°C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE ≥ 15V, Tj ≤ 175°C) Rev. 2.1 Dec-04 IKW50N60T q TrenchStop Series 120A V GE =20V 100A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 120A 15V 13V 80A 11V 9V 60A 7V 40A 20A 0V 1V 2V 15V 13V 80A 11V 60A 9V 7V 40A 0A 3V 0V 80A 60A 40A T J = 1 7 5 °C 20A 2 5 °C 0V 2V 4V 6V 8V VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=10V) Power Semiconductors 1V 2V 3V 4V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175°C) VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) IC, COLLECTOR CURRENT V GE =20V 20A 0A 0A 100A 2.5V IC =100A 2.0V IC =50A 1.5V IC =25A 1.0V 0.5V 0.0V 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 5 Rev. 2.1 Dec-04 IKW50N60T q TrenchStop Series t d(off) 100ns t, SWITCHING TIMES t, SWITCHING TIMES t d(off) tr tf t d(on) 100ns tf tr t d(on) 10ns 0A 20A 40A 60A 10ns 80A 0Ω IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175°C, VCE = 400V, VGE = 0/15V, RG = 7Ω, Dynamic test circuit in Figure E) 5Ω 10Ω 15Ω 20Ω 25Ω RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ = 175°C, VCE= 400V, VGE = 0/15V, IC = 50A, Dynamic test circuit in Figure E) t, SWITCHING TIMES t d(off) 100ns tf tr t d(on) 10ns 25°C 50°C 75°C 6V m ax. typ. 5V 4V m in. 3V 2V 1V 0V -50°C 100°C 125°C 150°C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 50A, RG=7Ω, Dynamic test circuit in Figure E) Power Semiconductors VGE(th), GATE-EMITT TRSHOLD VOLTAGE 7V 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.8mA) 6 Rev. 2.1 Dec-04 IKW50N60T q TrenchStop Series *) Eon and Ets include losses due to diode recovery *) E on a nd E ts include losses Ets* Eon* 4.0mJ Eoff 2.0mJ E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES 6.0mJ 0A 20A 40A 60A 80A 5.0m J 4.0m J 3.0m J E off 2.0m J E on * 1.0m J 0Ω IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, RG = 7Ω, Dynamic test circuit in Figure E) 2.0mJ Eoff Eon* 75°C 4m J E on * 3m J E ts * 2m J E off 1m J 0m J 300V 100°C 125°C 150°C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 50A, RG = 7Ω, Dynamic test circuit in Figure E) Power Semiconductors E, SWITCHING ENERGY LOSSES due to diode recovery 3.0mJ 50°C 20Ω *) E on and E ts include losses Ets* 0.0mJ 25°C 10Ω RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, IC = 50A, Dynamic test circuit in Figure E) *) Eon and Ets include losses due to diode recovery E, SWITCHING ENERGY LOSSES E ts * 0.0m J 0.0mJ 1.0mJ d ue to diode re co ve ry 6.0m J 8.0mJ 350V 400V 450V 500V 550V VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175°C, VGE = 0/15V, IC = 50A, RG = 7Ω, Dynamic test circuit in Figure E) 7 Rev. 2.1 Dec-04 TrenchStop Series IKW50N60T q VGE, GATE-EMITTER VOLTAGE C iss 1 5V c, CAPACITANCE 1nF 12 0V 4 80 V 1 0V C oss 100pF 5V C rss 0V 0nC 1 00n C 2 00n C 0V 3 00 nC QGE, GATE CHARGE Figure 17. Typical gate charge (IC=50 A) 10V 20V 30V 40V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) SHORT CIRCUIT WITHSTAND TIME 700A 600A 500A 400A 300A 200A tSC, IC(sc), short circuit COLLECTOR CURRENT 12µs 800A 100A 0A 12V 14V 16V 8µs 6µs 4µs 2µs 0µs 10V 18V VGE, GATE-EMITTETR VOLTAGE Figure 19. Typical short circuit collector current as a function of gateemitter voltage (VCE ≤ 400V, Tj ≤ 150°C) Power Semiconductors 10µs 11V 12V 13V 14V VGE, GATE-EMITETR VOLTAGE Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25°C, TJmax