IKW50N65WR5XKSA1

IKW50N65WR5 Reverse-Conducting IGBT Reverse-Conducting IGBT with monolithic body diode TO-247 – 3Pin Features • • • • • • • • • • • VCE = 650 V IC = 50 A Powerful monolithic diode optimized for ZCS applications High ruggedness, temperature stable behavior Very low VCEsat and low Eoff Easy paralleling capability due to positive temperature coefficient in VCEsat Low EMI Low electrical parameters depending (dependence) on temperature Qualified according to JESD-022 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/ 2021-10-27 restricted Copyright © Infineon T Potential applications • Welding • PFC • ZCS - converters Description C G E Type Package Marking IKW50N65WR5 PG-TO247-3 K50EWR5 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.20 2022-05-06 IKW50N65WR5 Reverse-Conducting IGBT Table of contents Table of contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 IGBT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 3 Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 4 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 6 Testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Datasheet 2 Revision 1.20 2022-05-06 IKW50N65WR5 Reverse-Conducting IGBT 1 Package 1 Package Table 1 Characteristic values Parameter Symbol Note or test condition Values Min. Internal emitter inductance measured 5 mm (0.197 in.) from case LE Storage temperature Tstg Soldering temperature Mounting torque M Thermal resistance, junction-ambient 2 Max. 13.0 -55 nH 150 °C wave soldering 1.6 mm (0.063 in.) from case for 10 s 260 °C M3 screw Maximum of mounting process: 3 0.6 Nm 40 K/W Rth(j-a) IGBT Table 2 Maximum rated values Parameter Symbol Note or test condition Collector-emitter voltage DC collector current, limited by Tvjmax Pulsed collector current, tp limited by Tvjmax VCE IC Unit 650 V Tc = 25 °C 80 A Tc = 130 °C 50 Tvj ≥ 25 °C limited by bondwire 150 A 150 A ±20 V ±30 V Tc = 25 °C 282 W Tc = 130 °C 141 VCE ≤ 650 V, Tvj ≤ 175 °C Gate-emitter voltage VGE Transient gate-emitter voltage VGE Power dissipation Ptot Table 3 Values ICpulse Turn-off safe operating area tp ≤ 10 µs, D < 0.01 Characteristic values Parameter Symbol Note or test condition Values Min. Collector-emitter breakdown voltage VBRCES IC = 0.2 mA, VGE = 0 V Collector-emitter saturation voltage VCEsat IC = 50 A, VGE = 15 V Gate-emitter threshold voltage VGEth (table continues...) Datasheet Typ. Unit IC = 0.5 mA, VCE = VGE 3 Typ. Unit Max. 650 V Tvj = 25 °C 1.4 Tvj = 175 °C 1.65 3.2 4 1.8 V 4.8 V Revision 1.20 2022-05-06 IKW50N65WR5 Reverse-Conducting IGBT 2 IGBT Table 3 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Zero gate-voltage collector current ICES VCE = 650 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V Transconductance gfs IC = 50 A, VCE = 20 V Input capacitance Cies Output capacitance Typ. Tvj = 25 °C Unit Max. 40 µA 100 nA 65 S VCE = 25 V, VGE = 0 V, f = 1000 kHz 6140 pF Coes VCE = 25 V, VGE = 0 V, f = 1000 kHz 55 pF Reverse transfer capacitance Cres VCE = 25 V, VGE = 0 V, f = 1000 kHz 23 pF Gate charge QG IC = 50 A, VGE = 15 V, VCC = 520 V 230 nC VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C, RGon = 16 Ω, RGoff = 16 Ω, IC = 25 A Lσ = 45 nH, Cσ = 32 pF Tvj = 175 °C, IC = 25 A 45 ns VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C, RGon = 16 Ω, RGoff = 16 Ω, IC = 25 A Lσ = 45 nH, Cσ = 32 pF Tvj = 175 °C, IC = 25 A 17 VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C, RGon = 16 Ω, RGoff = 16 Ω, IC = 25 A Lσ = 45 nH, Cσ = 32 pF Tvj = 175 °C, IC = 25 A 417 VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C, RGon = 16 Ω, RGoff = 16 Ω, IC = 25 A Lσ = 45 nH, Cσ = 32 pF Tvj = 175 °C, IC = 25 A 16 VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C, RGon = 16 Ω, RGoff = 16 Ω, IC = 25 A Lσ = 45 nH, Cσ = 32 pF Tvj = 175 °C, IC = 25 A 0.84 VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C, RGon = 16 Ω, RGoff = 16 Ω, IC = 25 A Lσ = 45 nH, Cσ = 32 pF Tvj = 175 °C, IC = 25 A 0.22 VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C, RGon = 16 Ω, RGoff = 16 Ω, IC = 25 A Lσ = 45 nH, Cσ = 32 pF Tvj = 175 °C, IC = 25 A 1.06 Turn-on delay time Rise time (inductive load) Turn-off delay time Fall time (inductive load) Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets 43 ns 19 ns 496 ns 11 mJ 1.04 mJ 0.32 mJ 1.36 (table continues...) Datasheet 4 Revision 1.20 2022-05-06 IKW50N65WR5 Reverse-Conducting IGBT 3 Diode Table 3 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. IGBT thermal resistance, junction to case Operating junction temperature Note: 3 Table 4 Rth(j-c) Tvj -40 Max. 0.53 K/W 175 °C Electrical Characteristic, at Tvj = 25°C, unless otherwise specified. Diode Maximum rated values Parameter Symbol Note or test condition Repetitive peak reverse voltage VRRM Diode forward current, limited by Tvjmax IF Diode pulsed current, tp limited by Tvjmax IFpulse Table 5 Typ. Unit Values Unit 650 V Tc = 25 °C 37 A Tc = 100 °C 22 Tvj ≥ 25 °C limited by bondwire 150 A Values Unit Characteristic values Parameter Symbol Note or test condition Min. Diode forward voltage Diode reverse recovery time Diode reverse recovery charge VF trr Qrr IF = 25 A VR = 400 V VR = 400 V Typ. Max. Tvj = 25 °C 1.4 1.9 Tvj = 175 °C 1.5 Tvj = 25 °C, IF = 25 A, -diF/dt = 900 A/µs 110 Tvj = 175 °C, IF = 25 A, -diF/dt = 900 A/µs 145 Tvj = 25 °C, IF = 25 A, -diF/dt = 900 A/µs 1.8 Tvj = 175 °C, IF = 25 A, -diF/dt = 900 A/µs 3.5 V ns µC (table continues...) Datasheet 5 Revision 1.20 2022-05-06 IKW50N65WR5 Reverse-Conducting IGBT 3 Diode Table 5 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current Diode thermal resistance, junction to case Operating junction temperature Note: Datasheet Irrm dirr/dt VR = 400 V VR = 400 V Tvj = 25 °C, IF = 25 A, -diF/dt = 900 A/µs 29 Tvj = 175 °C, IF = 25 A, -diF/dt = 900 A/µs 39 Tvj = 25 °C, IF = 25 A, -diF/dt = 900 A/µs 600 Tvj = 175 °C, IF = 25 A, -diF/dt = 900 A/µs 1200 Rth(j-c) Tvj Typ. -40 Unit Max. A A/µs 2.29 K/W 175 °C For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet. 6 Revision 1.20 2022-05-06 IKW50N65WR5 Reverse-Conducting IGBT 4 Characteristics diagrams 4 Characteristics diagrams Reverse bias safe operating area IC = f(VCE) Tvj ≤ 175 °C, VGE = 15 V, Tc = 25 °C Power dissipation as a function of case temperature Ptot = f(Tc) Tvj ≤ 175 °C 280 100 240 200 10 160 120 1 80 40 0 0.1 1 10 100 1000 25 Collector current as a function of case temperature IC = f(Tc) Tvj ≤ 175 °C, VGE ≥ 15 V 50 75 100 125 150 175 Typical output characteristic IC = f(VCE) Tvj = 25 °C 90 150 80 135 120 70 105 60 90 50 75 40 60 30 45 20 30 10 15 0 0 25 Datasheet 50 75 100 125 150 175 0.0 7 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Revision 1.20 2022-05-06 IKW50N65WR5 Reverse-Conducting IGBT 4 Characteristics diagrams Typical output characteristic IC = f(VCE) Tvj = 175 °C Typical transfer characteristic IC = f(VGE) VCE = 20 V 150 150 135 135 120 120 105 105 90 90 75 75 60 60 45 45 30 30 15 15 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 2 Typical collector-emitter saturation voltage as a function of junction temperature VCEsat = f(Tvj) VGE = 15 V 3 4 5 6 7 8 Typical switching times as a function of collector current t = f(IC) VCC = 400 V, Tvj = 175 °C, VGE = 0/15 V, RG = 16 Ω 1000 2.00 1.75 1.50 100 1.25 1.00 0.75 10 0.50 0.25 0.00 25 Datasheet 50 75 100 125 150 1 175 0 8 20 40 60 80 100 Revision 1.20 2022-05-06 IKW50N65WR5 Reverse-Conducting IGBT 4 Characteristics diagrams Typical switching times as a function of gate resistor t = f(RG) IC = 50 A, VCC = 400 V, Tvj = 175 °C, VGE = 0/15 V 1000 1000 100 100 10 10 1 1 10 20 30 40 50 60 70 25 80 Gate-emitter threshold voltage as a function of junction temperature VGEth = f(Tvj) IC = 0.5 mA 6.0 8.00 5.5 7.20 5.0 6.40 4.5 5.60 4.0 4.80 3.5 4.00 3.0 3.20 2.5 2.40 2.0 1.60 1.5 0.80 0 25 50 75 100 125 50 75 100 125 150 175 Typical switching energy losses as a function of collector current E = f(IC) VCC = 400 V, Tvj = 175 °C, VGE = 0/15 V, RG = 16 Ω 1.0 Datasheet Typical switching times as a function of junction temperature t = f(Tvj) IC = 50 A, VCC = 400 V, VGE = 0/15 V, RG = 16 Ω 0.00 150 0 9 20 40 60 80 100 Revision 1.20 2022-05-06 IKW50N65WR5 Reverse-Conducting IGBT 4 Characteristics diagrams Typical switching energy losses as a function of gate resistor E = f(RG) IC = 50 A, VCC = 400 V, Tvj = 175 °C, VGE = 0/15 V Typical switching energy losses as a function of junction temperature E = f(Tvj) VCC = 400 V, VGE = 0/15 V, RG = 16 Ω, IC = 50 A 7 3.5 6 3.0 5 2.5 4 2.0 3 1.5 2 1.0 1 0.5 0.0 0 10 20 30 40 50 60 70 25 80 Typical gate charge VGE = f(QG) IC = 50 A 50 75 100 125 150 175 Typical capacitance as a function of collector-emitter voltage C = f(VCE) f = 1000 kHz, VGE = 0 V 10000 20 18 16 14 1000 12 10 8 100 6 4 2 0 10 0 Datasheet 50 100 150 200 250 300 350 0 10 3 6 9 12 15 18 21 24 27 30 Revision 1.20 2022-05-06 IKW50N65WR5 Reverse-Conducting IGBT 4 Characteristics diagrams IGBT transient thermal impedance as a function of pulse width Zth(j-c) = f(tp) D = tp/T Diode transient thermal impedance as a function of pulse width Zth(j-c) = f(tp) D = tp/T 1 1 0.1 0.1 0.01 1E-6 1E-5 0.0001 0.001 0.01 0.01 1E-6 0.1 Typical reverse recovery time as a function of diode current slope trr = f(diF/dt) VR = 400 V, IF = 25 A 250 1E-5 0.0001 0.001 0.01 Typical reverse recovery charge as a function of diode current slope Qrr = f(diF/dt) VR = 400 V, IF = 25 A 5.0 4.5 225 4.0 200 3.5 175 3.0 150 2.5 2.0 125 1.5 100 1.0 75 0.5 50 500 Datasheet 700 900 1100 1300 0.0 500 1500 11 700 900 1100 1300 1500 Revision 1.20 2022-05-06 IKW50N65WR5 Reverse-Conducting IGBT 4 Characteristics diagrams Typical reverse recovery current as a function of diode current slope Irr = f(diF/dt) VR = 400 V, IF = 25 A 60 Typical diode peak rate of fall of reverse recovery current as a function of diode current slope dirr/dt = f(diF/dt) VR = 400 V, IF = 25 A 0 -200 50 -400 -600 40 -800 30 -1000 -1200 20 -1400 -1600 10 -1800 0 500 700 900 1100 1300 -2000 500 1500 700 900 1100 1300 1500 Typical diode forward current as a function of forward Typical diode forward voltage as a function of voltage junction temperature IF = f(VF) VF = f(Tvj) 2.50 150 135 2.25 120 2.00 105 1.75 90 1.50 75 60 1.25 45 1.00 30 0.75 15 0.50 0 0.0 Datasheet 0.5 1.0 1.5 2.0 2.5 3.0 25 3.5 12 50 75 100 125 150 175 Revision 1.20 2022-05-06 IKW50N65WR5 Reverse-Conducting IGBT 5 Package outlines 5 Package outlines Package Drawing PG-TO247-3 DIMENSIONS A A1 A2 b b1 b2 c D D1 D2 E E1 E2 E3 e L L1 P Q S MILLIMETERS MIN. MAX. 4.70 5.30 2.20 2.60 1.50 2.50 1.00 1.40 1.60 2.41 2.57 3.43 0.89 0.38 21.50 20.70 17.65 13.08 1.35 0.51 16.30 15.50 14.15 12.38 5.10 3.40 2.60 1.00 5.44 20.40 19.80 4.50 3.85 3.70 3.50 6.25 5.35 6.30 6.04 DOCUMENT NO. Z8B00003327 REVISION 06 SCALE 3:1 0 1 2 3 4 5mm EUROPEAN PROJECTION ISSUE DATE 25.07.2018 Figure 1 Datasheet 13 Revision 1.20 2022-05-06 IKW50N65WR5 Reverse-Conducting IGBT 6 Testing conditions 6 Testing Conditions Testing conditions VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf t tr td(on) Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCC t3 t2 t3 t4 t Figure B. Figure 2 Datasheet 14 Revision 1.20 2022-05-06 IKW50N65WR5 Reverse-Conducting IGBT Revision history Revision history Document revision Date of release Description of changes V1.1 2014-12-05 Preliminary data sheet V1.2 2015-03-27 New dynamic parameters and graphs V1.3 2015-05-13 V2.1 2015-12-10 Final data sheet n/a 2020-11-30 Datasheet migrated to a new system with a new layout and new revision number schema: target or preliminary datasheet = 0.xy; final datasheet = 1.xy 1.10 2022-03-08 Added transient gate-emitter voltage 1.20 2022-05-06 Transient gate-emitter voltage VGE added in table “Maximum rated values” of IGBT “Forward bias safe operating area” diagram renamed to “Reverse bias safe operating area” Datasheet 15 Revision 1.20 2022-05-06 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2022-05-06 Published by Infineon Technologies AG 81726 Munich, Germany © 2022 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-AAK880-006 Important notice The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. Warnings Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.