IKW75N60T

TRENCHSTOP™ Series IKW75N60T q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C             Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s Positive temperature coefficient in VCE(sat) very tight parameter distribution high ruggedness, temperature stable behaviour very high switching speed Low EMI Very soft, fast recovery anti-parallel Emitter Controlled HE diode Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ G E PG-TO247-3 Applications:  Frequency Converters  Uninterrupted Power Supply Type VCE IC VCE(sat),Tj=25°C Tj,max Marking Package IKW75N60T 600V 75A 1.5V 175C K75T60 PG-TO247-3 Maximum Ratings Parameter Symbol Collector-emitter voltage, Tj ≥ 25C VCE DC collector current, limited by Tjmax TC = 25C TC = 100C Value 600 80 IC 75 ICpul s 225 Turn off safe operating area VCE = 600V, Tj = 175C, tp = 1µs - 225 TC = 25C TC = 100C V 2) Pulsed collector current, tp limited by Tjmax Diode forward current, limited by Tjmax Unit A 2) IF 80 75 Diode pulsed current, tp limited by Tjmax IFpul s 225 Gate-emitter voltage VGE 20 V tSC 5 s Power dissipation TC = 25C Ptot 428 W Operating junction temperature Tj -40...+175 Storage temperature Tstg -55...+150 Soldering temperature, 1.6mm (0.063 in.) from case for 10s Tsold 260 3) Short circuit withstand time VGE = 15V, VCC  400V, Tj  150C C 1) J-STD-020 and JESD-022 Value limited by bondwire 3) Allowed number of short circuits: 1s. 2) IFAG IPC TD VLS 1 Rev. 2.8 2013-12-05 TRENCHSTOP™ Series IKW75N60T q Thermal Resistance Parameter Symbol Conditions Max. Value Unit RthJC 0.35 K/W RthJCD 0.6 RthJA 40 Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. 600 - - T j =2 5 C - 1.5 2.0 T j =1 7 5 C - 1.9 - T j =2 5 C - 1.65 2.0 T j =1 7 5 C - 1.6 - 4.1 4.9 5.7 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V , I C = 0 .2m A Collector-emitter saturation voltage VCE(sat) Diode forward voltage VF V V G E = 15 V , I C = 75 A V G E = 0V , I F = 7 5 A Gate-emitter threshold voltage VGE(th) I C = 1. 2m A, V C E = V G E Zero gate voltage collector current ICES V C E = 60 0 V , V G E = 0V µA T j =2 5 C - - 40 T j =1 7 5 C - - 5000 Gate-emitter leakage current IGES V C E = 0V , V G E =2 0 V - - 100 nA Transconductance gfs V C E = 20 V , I C = 75 A - 41 - S Integrated gate resistor RGint - Ω Dynamic Characteristic Input capacitance Ciss V C E = 25 V , - 4620 - Output capacitance Coss V G E = 0V , - 288 - Reverse transfer capacitance Crss f= 1 MH z - - Gate charge QGate V C C = 48 0 V, I C =7 5 A - 137 470 - nC - 13 - nH - 690 - A pF V G E = 15 V Internal emitter inductance LE measured 5mm (0.197 in.) from case Short circuit collector current Allowed number of short circuits: 1s. IFAG IPC TD VLS IC(SC) V G E = 15 V ,t S C  5 s V C C = 4 0 0 V, T j  150C 2 Rev. 2.8 2013-12-05 TRENCHSTOP™ Series IKW75N60T q Switching Characteristic, Inductive Load, at Tj=25 C Parameter Symbol Conditions Value min. typ. max. - 33 - - 36 - - 330 - - 35 - - 2.0 - - 2.5 - - 4.5 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j=25 C, VCC=400V,IC=75A, VGE=0/15V, rG=5 , L =100nH, C=39pF L , C f rom Fig. E Energy losses include “tail” and diode reverse recovery. ns mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr T j =2 5 C , - 121 - ns Diode reverse recovery charge Qrr V R = 4 00 V , I F = 7 5 A, - 2.4 - µC Diode peak reverse recovery current Irrm d i F / d t =1 4 60 A / s - 38.5 - A Diode peak rate of fall of reverse recovery current during t b d i r r /d t - 921 - A/s Switching Characteristic, Inductive Load, at Tj=175 C Parameter Symbol Conditions Value min. typ. max. - 32 - - 37 - - 363 - - 38 - - 2.9 - - 2.9 - - 5.8 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j=175 C, VCC=400V,IC=75A, VGE=0/15V, rG=5 , L =100nH, C=39pF L , C f rom Fig. E Energy losses include “tail” and diode reverse recovery. ns mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr T j =1 7 5 C - 182 - ns Diode reverse recovery charge Qrr V R = 4 00 V , I F = 7 5 A, - 5.8 - µC Diode peak reverse recovery current Irrm d i F / d t =1 4 60 A / s - 56.2 - A Diode peak rate of fall of reverse recovery current during t b d i r r /d t - 1013 - A/s IFAG IPC TD VLS 3 Rev. 2.8 2013-12-05 TRENCHSTOP™ Series IKW75N60T q IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 200A 150A T C =80°C 100A 50A T C =110°C Ic Ic 0A 10H z 100H z 1kH z 10kH z 100kH z f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj  175C, D = 0.5, VCE = 400V, VGE = 0/15V, rG = 5) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C; VGE=0/15V) 400W 120A IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 350W 300W 250W 200W 150W 100W 90A 60A 30A 50W 0W 25°C 50°C 75°C 0A 25°C 100°C 125°C 150°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj  175C) IFAG IPC TD VLS 4 75°C 125°C TC, CASE TEMPERATURE Figure 4. DC Collector current as a function of case temperature (VGE  15V, Tj  175C) Rev. 2.8 2013-12-05 TRENCHSTOP™ Series 120A 120A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT V GE =20V 15V 90A 13V 11V 9V 60A 7V 30A 0A V G E =20V 15V 90A 13V 11V 9V 60A 7V 30A 0A 0V 1V 2V 3V 0V 80A 60A 40A T J = 1 7 5 °C 20A 2 5 °C 0A 0V 2V 4V 6V 8V VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) IFAG IPC TD VLS 1V 2V 3V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175°C) VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) IC, COLLECTOR CURRENT IKW75N60T q 2.5V IC =150A 2.0V IC =75A 1.5V IC =37.5A 1.0V 0.5V 0.0V 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 5 Rev. 2.8 2013-12-05 TRENCHSTOP™ Series IKW75N60T q t, SWITCHING TIMES t, SWITCHING TIMES t d(off) 100ns tf t d(off) 100n s tf tr t d(on) t d(on) tr 10ns 10 ns 0A 40A 80A  120A IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175°C, VCE = 400V, VGE = 0/15V, rG = 5Ω, Dynamic test circuit in Figure E)   RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ = 175°C, VCE= 400V, VGE = 0/15V, IC = 75A, Dynamic test circuit in Figure E) t, SWITCHING TIMES t d(off) 100ns tf tr t d(on) 25°C 50°C 75°C 6V m ax. typ. 5V 4V m in. 3V 2V 1V 0V -50°C 100°C 125°C 15 0°C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 75A, rG=5Ω, Dynamic test circuit in Figure E) IFAG IPC TD VLS VGE(th), GATE-EMITT TRSHOLD VOLTAGE 7V 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 1.2mA) 6 Rev. 2.8 2013-12-05 TRENCHSTOP™ Series *) E on a nd E ts in clu d e lo ss e s Ets* d u e to d io d e rec o v e ry 12.0mJ Eon* 8.0mJ Eoff 4.0mJ E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES *) Eon and Ets include losses due to diode recovery IKW75N60T q E ts * 8 .0m J 6 .0m J 4 .0m J E on * 2 .0m J E off 0 .0m J 0.0mJ 0A 20A 40A 60A  80A 100A 120A 140A IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, rG = 5Ω, Dynamic test circuit in Figure E) *) Eon and Ets include losses due to diode recovery due to diode recovery Ets* Eoff 2.0mJ Eon* 1.0mJ 0.0mJ 25°C 50°C 75°C 8m J E on * 6m J E ts * 4m J E off 2m J 0m J 300V 100°C 125°C 150°C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 75A, rG = 5Ω, Dynamic test circuit in Figure E) IFAG IPC TD VLS  *) E on and E ts include losses 4.0mJ 3.0mJ  RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, IC = 75A, Dynamic test circuit in Figure E) E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES 5.0mJ  350V 400V 450V 500V 550V VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175°C, VGE = 0/15V, IC = 75A, rG = 5Ω, Dynamic test circuit in Figure E) 7 Rev. 2.8 2013-12-05 TRENCHSTOP™ Series IKW75N60T q VGE, GATE-EMITTER VOLTAGE C iss c, CAPACITANCE 15V 120V 10V 480V 1nF C oss 5V C rss 100pF 0V 0nC 100nC 200nC 300nC 0V 400nC QGE, GATE CHARGE Figure 17. Typical gate charge (IC=75 A) 10V 20V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) tSC, SHORT CIRCUIT WITHSTAND TIME IC(sc), short circuit COLLECTOR CURRENT 12µs 1000 750 500 250 0 12 13 14 15 16 17 18 19 8µs 6µs 4µs 2µs 0µs 10V 20 VGE, GATE-EMITTER VOLTAGE Figure 19. Typical short circuit collector current as a function of gateemitter voltage (VCE  400V, Tj  150C) IFAG IPC TD VLS 10µs 11V 12V 13V 14V VGE, GATE- EMITTER VOLTAGE Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=400V, start at TJ=25°C, TJmax