IKW75N60TAFKSA1

TRENCHSTOPTM IKW75N60TA Series q Low Loss DuoPack : IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C G            Automotive AEC Q101 qualified Designed for DC/AC converters for Automotive Application Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s TRENCHSTOPTM and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed Positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Green Package Very soft, fast recovery anti-parallel Emitter Controlled HE diode Type IKW75N60TA E PG-TO247-3 VCE IC VCE(sat),Tj=25°C Tj,max Marking Package 600V 75A 1.5V 175C K75T60A PG-TO247-3 Maximum Ratings Parameter Symbol Collector-emitter voltage, Tj ≥ 25C VCE Value 600 Unit V 1) IC 80 75 Pulsed collector current, tp limited by Tjmax ICpul s 225 Turn off safe operating area, VCE  600V, Tj  175C, tp  1µs - 225 IF 80 75 Diode pulsed current, tp limited by Tjmax IFpul s 225 Gate-emitter voltage VGE 20 V Short circuit withstand time VGE = 15V, VCC  400V, Tj  150C tSC 5 s Power dissipation TC = 25C Ptot 428 W Operating junction temperature Tj -40...+175 Storage temperature Tstg -55...+150 Soldering temperature (wavesoldering only allowed at leads, 1.6mm (0.063 in.) from case for 10s) Tsold 260 DC collector current, limited by Tjmax Diode forward current, limited by Tjmax TC = 25C TC = 105C TC = 25C TC = 100C A 1) 2) 1) 2) C Value limited by bondwire Allowed number of short circuits: 1s. Power Semiconductors 1 Rev. 2.3 14.07.2014 TRENCHSTOPTM IKW75N60TA Series q Thermal Resistance Parameter Symbol Conditions Max. Value Unit K/W Characteristic IGBT thermal resistance, junction – case RthJC 0.35 Diode thermal resistance, junction – case RthJCD 0.6 Thermal resistance, junction – ambient RthJA 40 Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. 600 - - V G E = 15 V , I C = 75 A T j =2 5 C T j =1 7 5 C - 1.5 1.9 2.0 - V G E = 0V , I F = 7 5 A T j =2 5 C T j =1 7 5 C - 1.65 1.6 2.0 - 4.1 4.9 5.7 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V , I C = 0 .2m A Collector-emitter saturation voltage VCE(sat) Diode forward voltage VF Gate-emitter threshold voltage VGE(th) I C = 1. 2m A, V C E = V G E Zero gate voltage collector current ICES V C E = 60 0 V , V G E = 0V T j =2 5 C T j =1 7 5 C - - 40 5000 V µA Gate-emitter leakage current IGES V C E = 0V , V G E =2 0 V - - 100 nA Transconductance gfs V C E = 20 V , I C = 75 A - 41 - S Integrated gate resistor RGint Ω - Dynamic Characteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QGate V C E = 25 V , V G E = 0V , f= 1 MH z - 4620 - - 288 - - 137 470 - V C C = 48 0 V, I C =7 5 A V G E = 15 V - nC - 13 - nH - 690 - A Rev. 2.3 14.07.2014 LE Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current Allowed number of short circuits: 1s. Power Semiconductors IC(SC) V G E = 15 V ,t S C  5 s V C C = 4 0 0 V, T j  150C 2 pF TRENCHSTOPTM IKW75N60TA Series q Switching Characteristic, Inductive Load, at Tj=25 C Parameter Symbol Conditions Value Unit min. typ. max. - 33 - - 36 - - 330 - - 35 - - 2.0 - - 2.5 - - 4.5 - - 121 - ns - 2.4 - µC - 39 - A - -920 - A/s IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j=25 C, VCC=400V,IC=75A, VGE=0/15V, RG=5 , L =100n H, C=39pF L , C f rom Fig. E Energy losses include “tail” and diode reverse recovery. ns mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recovery current during t b d i r r /d t T j =2 5 C , V R = 4 00 V , I F = 7 5 A, d i F / d t =1 4 60 A / s Switching Characteristic, Inductive Load, at Tj=175 C Parameter Symbol Conditions Value Unit min. typ. max. - 32 - - 37 - - 363 - - 38 - - 2.9 - - 2.9 - - 5.8 - - 182 - ns - 5.8 - µC - 56 - A - -1000 - A/s IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j=175 C, VCC=400V,IC=75A, VGE=0/15V, RG=5 , L =100n H, C=39pF L , C f rom Fig. E Energy losses include “tail” and diode reverse recovery. ns mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recovery current during t b d i r r /d t Power Semiconductors T j =1 7 5 C V R = 4 00 V , I F = 7 5 A, d i F / d t =1 4 60 A / s 3 Rev. 2.3 14.07.2014 TRENCHSTOPTM IKW75N60TA Series q IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 200A 150A T C =80°C 100A 50A T C =110°C Ic Ic 0A 10Hz 100Hz 1kHz 10kHz 100kHz f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj  175C, D = 0.5, VCE = 400V, VGE = 0/15V, RG = 5) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C; VGE=0/15V) 400W 120A IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 350W 300W 250W 200W 150W 100W 90A 60A 30A 50W 0W 25°C 50°C 75°C 0A 25°C 100°C 125°C 150°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj  175C) Power Semiconductors 4 75°C 125°C TC, CASE TEMPERATURE Figure 4. DC Collector current as a function of case temperature (VGE  15V, Tj  175C) Rev. 2.3 14.07.2014 TRENCHSTOPTM 120A 120A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT V G E =20V 15V 90A 13V 11V 9V 60A 7V 30A 0A V G E =20V 15V 90A 13V 11V 9V 60A 7V 30A 0A 0V 1V 2V 3V 0V 80A 60A 40A T J =175°C 20A 25°C 0A 0V 2V 4V 6V 8V VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) Power Semiconductors 1V 2V 3V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175°C) VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) IC, COLLECTOR CURRENT IKW75N60TA Series q 2.5V IC =150A 2.0V IC =75A 1.5V I C =37.5A 1.0V 0.5V 0.0V 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 5 Rev. 2.3 14.07.2014 TRENCHSTOPTM IKW75N60TA Series q t, SWITCHING TIMES t, SWITCHING TIMES t d(off) 100ns tf t d(off) 100ns tf tr t d(on) t d(on) tr 10ns 10ns 0A 40A 80A  120A IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175°C, VCE = 400V, VGE = 0/15V, RG = 5Ω, Dynamic test circuit in Figure E)   RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ = 175°C, VCE= 400V, VGE = 0/15V, IC = 75A, Dynamic test circuit in Figure E) t, SWITCHING TIMES t d(off) 100ns tf tr t d(on) 25°C 50°C 75°C 6V m ax. typ. 5V 4V m in. 3V 2V 1V 0V -50°C 100°C 125°C 150°C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 75A, RG=5Ω, Dynamic test circuit in Figure E) Power Semiconductors VGE(th), GATE-EMITT TRSHOLD VOLTAGE 7V 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 1.2mA) 6 Rev. 2.3 14.07.2014 TRENCHSTOPTM IKW75N60TA Series q 10 mJ Ets* 12.0mJ Eon* 8.0mJ Eoff 4.0mJ Ets* *) Eon and Ets include losses due to diode recovery 9 mJ E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES *) Eon and Ets include losses due to diode recovery 8 mJ 7 mJ 6 mJ Eoff* 5 mJ 4 mJ Eon* 3 mJ 2 mJ 1 mJ 0 mJ 0.0mJ 0A 20A 40A 60A 80A 100A 120A 140A 0Ω IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, RG = 5Ω, Dynamic test circuit in Figure E) *) Eon and Ets include losses due to diode recovery Eoff 2.0mJ Eon* 1.0mJ 0.0mJ 25°C 50°C 75°C 8m J E on * 6m J E ts * 4m J E off 2m J 0m J 300V 100°C 125°C 150°C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 75A, RG = 5Ω, Dynamic test circuit in Figure E) Power Semiconductors 15 Ω due to diode recovery Ets* 4.0mJ 3.0mJ 10 Ω *) E on and E ts include losses E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES 5.0mJ 5Ω RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, IC = 75A, Dynamic test circuit in Figure E) 350V 400V 450V 500V 550V VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175°C, VGE = 0/15V, IC = 75A, RG = 5Ω, Dynamic test circuit in Figure E) 7 Rev. 2.3 14.07.2014 TRENCHSTOPTM IKW75N60TA Series q VGE, GATE-EMITTER VOLTAGE Cies c, CAPACITANCE 15V 120V 10V 480V 1000 pF Coes 5V Cres 0V 0nC 100 pF 100nC 200nC 300nC 400nC 0V QGE, GATE CHARGE Figure 17. Typical gate charge (IC=75 A) 10 V 20 V 30 V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) tSC, SHORT CIRCUIT WITHSTAND TIME IC(sc), short circuit COLLECTOR CURRENT 12µs 1000A 750A 500A 250A 0A 12V 14V 16V 8µs 6µs 4µs 2µs 0µs 10V 18V VGE, GATE-EMITTETR VOLTAGE Figure 19. Typical short circuit collector current as a function of gateemitter voltage (VCE  400V, Tj  150C) Power Semiconductors 10µs 11V 12V 13V 14V VGE, GATE-EMITETR VOLTAGE Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=400V, start at TJ=25°C, TJmax