IKW75N65SS5XKSA1

IKW75N65SS5 CoolSiC™ Hybrid Discrete CoolSiC™ Hybrid Discrete - TRENCHSTOP™ 5 S5 IGBT co-packed with full-rated 6th generation CoolSiC™ diode TO-247 – 3Pin Features • VCE = 650 V • IC = 75 A • Ultra-low switching losses due to the combination of TRENCHSTOPTM 5 and CoolSiCTM technology • Very low on-state losses • Benchmark efficiency in hard switching topologies • Plug-and-play replacement of pure silicon devices • Maximum junction temperature Tvjmax = 175°C • Qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/ 2021-10-27 restricted Copyright © Infineon T Potential applications • • • • • Industrial SMPS Industrial UPS Solar string inverter Energy storage Charger Product validation • Qualified for applications listed above based on the test conditions in the relevant tests of JEDEC20/22 Description Package pin definition: • Pin G - gate • Pin C & backside - collector • Pin E - emitter C G E Type Package Marking IKW75N65SS5 PG-TO247-3 K75ESS5 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.10 2022-09-22 IKW75N65SS5 CoolSiC™ Hybrid Discrete Table of contents Table of contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 IGBT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 3 Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 4 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 6 Testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Datasheet 2 Revision 1.10 2022-09-22 IKW75N65SS5 CoolSiC™ Hybrid Discrete 1 Package 1 Package Table 1 Characteristic values Parameter Symbol Note or test condition Values Min. Internal emitter inductance measured 5 mm (0.197 in.) from case LE Storage temperature Tstg Soldering temperature Mounting torque M Thermal resistance, junction-ambient 2 Typ. Unit Max. 13.0 -55 nH 150 °C wave soldering 1.6 mm (0.063 in.) from case for 10 s 260 °C M3 screw Maximum of mounting process: 3 0.6 Nm 40 K/W Rth(j-a) IGBT Table 2 Maximum rated values Parameter Symbol Note or test condition Collector-emitter voltage DC collector current, limited by Tvjmax Pulsed collector current, tp limited by Tvjmax VCE IC Unit 650 V Tc = 25 °C 80 A Tc = 100 °C 80 Tvj ≥ 25 °C limited by bondwire ICpulse Turn-off safe operating area 300 A 300 A ±20 V ±30 V Tc = 25 °C 395 W Tc = 100 °C 197 VCE ≤ 650 V, tp = 1 µs, Tvj ≤ 175 °C Gate-emitter voltage VGE Transient gate-emitter voltage VGE Power dissipation Ptot Table 3 Values tp ≤ 10 µs, D < 0.01 Characteristic values Parameter Symbol Note or test condition Values Min. Collector-emitter saturation voltage Gate-emitter threshold voltage VCEsat VGEth IC = 75 A, VGE = 15 V IC = 0.75 mA, VCE = VGE Unit Typ. Max. Tvj = 25 °C 1.35 1.7 V Tvj = 125 °C 1.55 Tvj = 175 °C 1.65 4.8 V 3.2 4 (table continues...) Datasheet 3 Revision 1.10 2022-09-22 IKW75N65SS5 CoolSiC™ Hybrid Discrete 2 IGBT Table 3 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. ICES Zero gate-voltage collector current ICES VCE = 480 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V Transconductance gfs IC = 75 A, VCE = 20 V 100 S Input capacitance Cies VCE = 25 V, VGE = 0 V, f = 250 kHz 4000 pF Output capacitance Coes VCE = 25 V, VGE = 0 V, f = 250 kHz 785 pF Reverse transfer capacitance Cres VCE = 25 V, VGE = 0 V, f = 250 kHz 15 pF Gate charge QG IC = 75 A, VGE = 15 V, VCC = 520 V 164 nC VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C, RGon = 5.6 Ω, IC = 75 A RGoff = 5.6 Ω, Lσ = 30 nH, Tvj = 25 °C, Cσ = 30 pF IC = 37.5 A 22 ns Rise time (inductive load) Turn-off delay time Tvj = 25 °C Max. Zero gate-voltage collector current Turn-on delay time VCE = 650 V, VGE = 0 V Typ. Unit Tvj = 175 °C td(on) tr td(off) 50 µA 100 nA 21 Tvj = 150 °C, IC = 75 A 22 Tvj = 150 °C, IC = 37.5 A 20 13 ns 8 Tvj = 150 °C, IC = 75 A 15 Tvj = 150 °C, IC = 37.5 A 8 VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C, RGon = 5.6 Ω, IC = 75 A RGoff = 5.6 Ω, Lσ = 30 nH, Tvj = 25 °C, Cσ = 30 pF IC = 37.5 A µA 3000 Tvj = 25 °C VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C, RGon = 5.6 Ω, IC = 75 A RGoff = 5.6 Ω, Lσ = 30 nH, Tvj = 25 °C, Cσ = 30 pF IC = 37.5 A 1900 145 ns 155 Tvj = 150 °C, IC = 75 A 168 Tvj = 150 °C, IC = 37.5 A 195 (table continues...) Datasheet 4 Revision 1.10 2022-09-22 IKW75N65SS5 CoolSiC™ Hybrid Discrete 2 IGBT Table 3 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Fall time (inductive load) Turn-on energy Turn-off energy Total switching energy IGBT thermal resistance, junction-case Operating junction temperature Datasheet tf Eon Eoff Ets VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C, RGon = 5.6 Ω, IC = 75 A RGoff = 5.6 Ω, Lσ = 30 nH, Tvj = 25 °C, Cσ = 30 pF IC = 37.5 A ns 26 Tvj = 150 °C, IC = 75 A 24 Tvj = 150 °C, IC = 37.5 A 33 0.45 mJ 0.2 Tvj = 150 °C, IC = 75 A 0.57 Tvj = 150 °C, IC = 37.5 A 0.25 VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C, RGon = 5.6 Ω, IC = 75 A RGoff = 5.6 Ω, Lσ = 30 nH, Tvj = 25 °C, Cσ = 30 pF IC = 37.5 A 0.75 mJ 0.42 Tvj = 150 °C, IC = 75 A 1.24 Tvj = 150 °C, IC = 37.5 A 0.75 VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C, RGon = 5.6 Ω, IC = 75 A RGoff = 5.6 Ω, Lσ = 30 nH, Tvj = 25 °C, Cσ = 30 pF IC = 37.5 A 1.2 mJ 0.62 Tvj = 150 °C, IC = 75 A 1.81 Tvj = 150 °C, IC = 37.5 A 1 Rth(j-c) -40 5 Max. 21 VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C, RGon = 5.6 Ω, IC = 75 A RGoff = 5.6 Ω, Lσ = 30 nH, Tvj = 25 °C, Cσ = 30 pF IC = 37.5 A Tvj Typ. Unit 0.38 K/W 175 °C Revision 1.10 2022-09-22 IKW75N65SS5 CoolSiC™ Hybrid Discrete 3 Diode 3 Diode Table 4 Maximum rated values Parameter Symbol Note or test condition Repetitive peak reverse voltage VRRM Diode forward current, limited by Tvjmax IF Diode pulsed current, tp limited by Tvjmax 1) IFpulse 1) Values Unit 650 V Tc = 25 °C 80 A Tc = 100 °C 57 Tvj ≥ 25 °C limited by bondwire 225 A Pulse current level depends on Tvj of diode chip, see also Fig. "Maximum pulse current as a function of junction temperature" Table 5 Characteristic values Parameter Symbol Note or test condition Values Min. Diode forward voltage Diode thermal resistance, junction-case Operating junction temperature Note: Datasheet VF IF = 60 A Typ. Max. Tvj = 25 °C 1.35 1.5 V Tvj = 125 °C 1.55 Tvj = 175 °C 1.65 0.68 K/W 175 °C Rth(j-c) Tvj Unit -40 For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet. Electrical Characteristic at Tvj = 25°C, unless otherwise specified. Dynamic test circuit, parasitic inductance Lσ, parasitic capacitor Cσ from Fig. E. Energy losses include “tail” and diode reverse recovery. 6 Revision 1.10 2022-09-22 IKW75N65SS5 CoolSiC™ Hybrid Discrete 4 Characteristics diagrams 4 Characteristics diagrams Power dissipation as a function of case temperature Ptot = f(Tc) Tvj ≤ 175 °C Collector current as a function of case temperature IC = f(Tc) Tvj ≤ 175 °C, VGE ≥ 15 V 400 90 350 80 70 300 60 250 50 200 40 150 30 100 20 50 10 0 0 25 50 75 100 125 150 175 25 Typical output characteristic IC = f(VCE) Tvj = 25 °C 75 100 125 150 175 Typical output characteristic IC = f(VCE) Tvj = 150 °C 300 300 270 270 240 240 210 210 180 180 150 150 120 120 90 90 60 60 30 30 0 0 0.0 Datasheet 50 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 7 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Revision 1.10 2022-09-22 IKW75N65SS5 CoolSiC™ Hybrid Discrete 4 Characteristics diagrams Typical transfer characteristic IC = f(VGE) VCE = 20 V Typical collector-emitter saturation voltage as a function of junction temperature VCEsat = f(Tvj) VGE = 15 V 2.50 300 270 2.25 240 2.00 210 1.75 180 1.50 150 120 1.25 90 1.00 60 0.75 30 0.50 0 2.5 3.5 4.5 5.5 6.5 7.5 8.5 25 9.5 Typical switching times as a function of collector current t = f(IC) VCC = 400 V, Tvj = 150 °C, VGE = 0/15 V, RG = 5.6 Ω 75 100 125 150 175 Typical switching times as a function of gate resistor t = f(RG) IC = 75 A, VCC = 400 V, Tvj = 150 °C, VGE = 0/15 V 1000 1000 100 100 10 10 1 1 0 Datasheet 50 25 50 75 100 125 150 175 200 225 0 8 10 20 30 40 50 Revision 1.10 2022-09-22 IKW75N65SS5 CoolSiC™ Hybrid Discrete 4 Characteristics diagrams Typical switching times as a function of junction temperature t = f(Tvj) IC = 75 A, VCC = 400 V, VGE = 0/15 V, RG = 5.6 Ω Gate-emitter threshold voltage as a function of junction temperature VGEth = f(Tvj) IC = 0.75 mA 1000 5.5 5.0 4.5 100 4.0 3.5 3.0 2.5 10 2.0 1.5 1.0 1 25 50 75 100 125 150 175 25 Typical switching energy losses as a function of collector current E = f(IC) VCC = 400 V, Tvj = 150 °C, VGE = 0/15 V, RG = 5.6 Ω 50 75 100 125 150 Typical switching energy losses as a function of gate resistor E = f(RG) IC = 75 A, VCC = 400 V, Tvj = 150 °C, VGE = 0/15 V 8 5.0 4.5 7 4.0 6 3.5 5 3.0 4 2.5 2.0 3 1.5 2 1.0 1 0.5 0 0.0 0 Datasheet 25 50 75 100 125 150 175 200 225 0 9 10 20 30 40 50 Revision 1.10 2022-09-22 IKW75N65SS5 CoolSiC™ Hybrid Discrete 4 Characteristics diagrams Typical switching energy losses as a function of junction temperature E = f(Tvj) IC = 75 A, VCC = 400 V, VGE = 0/15 V, RG = 5.6 Ω Typical switching energy losses as a function of collector emitter voltage E = f(VCE) IC = 75 A, Tvj = 150 °C, VGE = 0/15 V, RG = 5.6 Ω 2.50 2.50 2.25 2.25 2.00 2.00 1.75 1.75 1.50 1.50 1.25 1.25 1.00 1.00 0.75 0.75 0.50 0.50 0.25 0.25 0.00 25 50 75 100 125 150 0.00 200 175 Typ. reverse current vs. reverse voltage as a function of Tvj ICES = f(VCE) 250 300 350 400 450 500 Typical gate charge VGE = f(QG) IC = 75 A 0.1 16 0.01 14 12 0.001 10 0.0001 8 1E-5 6 1E-6 4 1E-7 2 0 1E-8 100 Datasheet 200 300 400 500 600 700 0 10 20 40 60 80 100 120 140 160 180 Revision 1.10 2022-09-22 IKW75N65SS5 CoolSiC™ Hybrid Discrete 4 Characteristics diagrams Typical capacitance as a function of collector-emitter voltage C = f(VCE) f = 250 kHz, VGE = 0 V IGBT transient thermal impedance as a function of pulse width Zth(j-c) = f(tp) D = tp/T 10000 1 1000 0.1 100 0.01 10 0.001 0.0001 1E-7 1 0 5 10 15 20 25 30 Diode transient thermal impedance as a function of pulse width Zth(j-c) = f(tp) D = tp/T 1 1E-6 1E-5 0.0001 0.001 0.01 0.1 1 Maximum pulse current as a function of junction temperature IFpulse = f(Tvj) 350 300 250 0.1 200 150 0.01 100 50 0.001 1E-6 Datasheet 0 1E-5 0.0001 0.001 0.01 0.1 1 25 11 50 75 100 125 150 175 Revision 1.10 2022-09-22 IKW75N65SS5 CoolSiC™ Hybrid Discrete 4 Characteristics diagrams Typical diode forward current as a function of forward Typical diode forward voltage as a function of voltage junction temperature IF = f(VF) VF = f(Tvj) 3.5 225 200 3.0 175 2.5 150 125 2.0 100 1.5 75 1.0 50 0.5 25 0.0 0 0.0 Datasheet 0.5 1.0 1.5 2.0 2.5 3.0 3.5 25 4.0 12 50 75 100 125 150 175 Revision 1.10 2022-09-22 IKW75N65SS5 CoolSiC™ Hybrid Discrete 5 Package outlines 5 Package outlines Package Drawing PG-TO247-3 DIMENSIONS A A1 A2 b b1 b2 c D D1 D2 E E1 E2 E3 e L L1 P Q S MILLIMETERS MIN. MAX. 4.70 5.30 2.20 2.60 1.50 2.50 1.00 1.40 1.60 2.41 2.57 3.43 0.89 0.38 21.50 20.70 17.65 13.08 1.35 0.51 16.30 15.50 14.15 12.38 5.10 3.40 2.60 1.00 5.44 20.40 19.80 4.50 3.85 3.70 3.50 6.25 5.35 6.30 6.04 DOCUMENT NO. Z8B00003327 REVISION 06 SCALE 3:1 0 1 2 3 4 5mm EUROPEAN PROJECTION ISSUE DATE 25.07.2018 Figure 1 Datasheet 13 Revision 1.10 2022-09-22 IKW75N65SS5 CoolSiC™ Hybrid Discrete 6 Testing conditions 6 Testing Conditions Testing conditions VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf t tr td(on) Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCC t3 t2 t3 t4 t Figure B. Figure 2 Datasheet 14 Revision 1.10 2022-09-22 IKW75N65SS5 CoolSiC™ Hybrid Discrete Revision history Revision history Document revision Date of release Description of changes V1.1 2020-03-20 Preliminary Data Sheet V2.1 2020-07-27 Final Data Sheet n/a 2020-11-30 Datasheet migrated to a new system with a new layout and new revision number schema: target or preliminary datasheet = 0.xy; final datasheet = 1.xy 1.10 2022-09-22 Rename of product family name from “Hybrid CoolSiC™ IGBT” to “CoolSiC™ hybrid discrete” Datasheet 15 Revision 1.10 2022-09-22 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2022-09-22 Published by Infineon Technologies AG 81726 Munich, Germany © 2022 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-AAL363-003 Important notice The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. Warnings Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.