IKWH60N65WR6XKSA1

IKWH60N65WR6 TRENCHSTOP™ 5 WR6 technology in enhanced creepage and clearance package TRENCHSTOP™ 5 WR6 technology in enhanced creepage and clearance package offers improved reliability against package contamination TO-247 HCC – 3Pin Features • • • • • • • • • • VCE = 650 V IC = 60 A Pin-to-pin creepage distance > 4.8 mm Pin-to-pin clearance distance > 3.4 mm Monolithic diode optimized for PFC and welding applications Stable temperature behavior Very low VCEsat and low Eoff Easy paralleling capability due to positive temperature coefficient in VCEsat Low temperature dependence of VCEsat and Esw Product spectrum and PSpice Models: http://www.infineon.com/igbt/ Potential applications 2021-10-27 restricted Copyright © Infineon T • PFC • Welding • ZCS applications Product validation • Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 Description C G E Type Package Marking IKWH60N65WR6 PG-TO247-3-STD-NN4.8 H60EWR6 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.10 2022-12-06 IKWH60N65WR6 TRENCHSTOP™ 5 WR6 technology in enhanced creepage and clearance package Table of contents Table of contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 IGBT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 3 Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 4 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 6 Testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Datasheet 2 Revision 1.10 2022-12-06 IKWH60N65WR6 TRENCHSTOP™ 5 WR6 technology in enhanced creepage and clearance package 1 Package 1 Package Table 1 Characteristic values Parameter Symbol Note or test condition Values Min. Internal emitter inductance measured 5 mm (0.197 in.) from case LE Storage temperature Tstg Soldering temperature Tsold M Mounting torque Typ. Unit Max. 13 -55 nH 150 °C wave soldering 1.6 mm (0.063 in.) from case for 10 s 260 °C M3 screw, Maximum of mounting process: 3 0.6 Nm Thermal resistance, junction-ambient Rth(j-a) 40 K/W IGBT thermal resistance, junction-case Rth(j-c) 0.6 K/W Diode thermal resistance, junction-case Rth(j-c) 2.3 K/W 2 IGBT Table 2 Maximum rated values Parameter Symbol Note or test condition Collector-emitter voltage DC collector current, limited by Tvjmax Pulsed collector current, tp limited by Tvjmax VCE Unit 650 V Tc = 25 °C 100 A Tc = 100 °C 63 Tvj ≥ 25 °C IC ICpulse Turn-off safe operating area 180 A 180 A ±20 V ±30 V Tc = 25 °C 240 W Tc = 100 °C 120 VCE ≤ 650 V, Tvj ≤ 175 °C Gate-emitter voltage VGE Transient gate-emitter voltage VGE Power dissipation Ptot Table 3 Values tp ≤ 10 µs, D < 0.01 Characteristic values Parameter Symbol Note or test condition Values Min. Collector-emitter breakdown voltage VBRCES IC = 0.2 mA, VGE=0 V 650 Typ. Unit Max. V (table continues...) Datasheet 3 Revision 1.10 2022-12-06 IKWH60N65WR6 TRENCHSTOP™ 5 WR6 technology in enhanced creepage and clearance package 2 IGBT Table 3 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Typ. Max. Tvj = 25 °C 1.55 1.85 V Tvj = 175 °C 1.8 4.8 V 40 µA Collector-emitter saturation voltage VCEsat Gate-emitter threshold voltage VGEth IC = 0.6 mA, VCE = VGE Zero gate-voltage collector current ICES VCE = 650 V, VGE=0 V Gate-emitter leakage current IGES VCE=0 V, VGE = 20 V Transconductance gfs IC = 60 A, VCE = 20 V 150 S Input capacitance Cies VCE = 25 V, VGE=0 V, f = 100 kHz 4270 pF Output capacitance Coes VCE = 25 V, VGE=0 V, f = 100 kHz 44 pF Reverse transfer capacitance Cres VCE = 25 V, VGE=0 V, f = 100 kHz 19 pF Gate charge QG IC = 60 A, VGE = 15 V, VCC = 520 V 174 nC VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C, RG(on) = 15 Ω, IC = 60 A RG(off) = 15 Ω, Lσ = 30 nH, Tvj = 175 °C, Cσ = 31 pF IC = 60 A 35 ns Turn-on delay time Rise time (inductive load) Turn-off delay time Fall time (inductive load) Turn-on energy (table continues...) Datasheet IC = 60 A, VGE = 15 V Unit 3.2 Tvj = 25 °C Tvj = 175 °C td(on) tr td(off) tf Eon VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C, RG(on) = 15 Ω, IC = 60 A RG(off) = 15 Ω, Lσ = 30 nH, Tvj = 175 °C, Cσ = 31 pF IC = 60 A VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C, RG(on) = 15 Ω, IC = 60 A RG(off) = 15 Ω, Lσ = 30 nH, Tvj = 175 °C, Cσ = 31 pF IC = 60 A VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C, RG(on) = 15 Ω, IC = 60 A RG(off) = 15 Ω, Lσ = 30 nH, Tvj = 175 °C, Cσ = 31 pF IC = 60 A VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C, RG(on) = 15 Ω, IC = 60 A RG(off) = 15 Ω, Lσ = 30 nH, Tvj = 175 °C, Cσ = 31 pF IC = 60 A 4 4 0.5 mA 100 nA 32 28 ns 30 311 ns 344 23 ns 20 1.82 mJ 2.04 Revision 1.10 2022-12-06 IKWH60N65WR6 TRENCHSTOP™ 5 WR6 technology in enhanced creepage and clearance package 3 Diode Table 3 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Turn-off energy Eoff Total switching energy Operating junction temperature Note: 3 Table 4 Ets Tvj VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C, RG(on) = 15 Ω, IC = 60 A RG(off) = 15 Ω, Lσ = 30 nH, Tvj = 175 °C, Cσ = 31 pF IC = 60 A Max. 0.85 mJ 1.17 2.67 mJ 3.21 -40 175 °C Electrical Characteristic, at Tvj = 25 °C, unless otherwise specified. Diode Maximum rated values Parameter Symbol Note or test condition Repetitive peak reverse voltage VRRM Diode forward current, limited by Tvjmax IF Diode pulsed current, tp limited by Tvjmax IFpulse Table 5 VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C, RG(on) = 15 Ω, IC = 60 A RG(off) = 15 Ω, Lσ = 30 nH, Tvj = 175 °C, Cσ = 31 pF IC = 60 A Typ. Unit Values Unit 650 V Tc = 25 °C 32 A Tc = 100 °C 19 Tvj ≥ 25 °C 60 A Values Unit Characteristic values Parameter Symbol Note or test condition Min. Diode forward voltage Diode reverse recovery time VF trr IF = 16 A VR = 400 V, RG(on) = 15 Ω Typ. Max. Tvj = 25 °C 1.3 1.6 Tvj = 175 °C 1.3 Tvj = 25 °C, IF = 30 A, -diF/dt = 1700 A/µs 92 Tvj = 175 °C, IF = 30 A, -diF/dt = 1600 A/µs 121 V ns (table continues...) Datasheet 5 Revision 1.10 2022-12-06 IKWH60N65WR6 TRENCHSTOP™ 5 WR6 technology in enhanced creepage and clearance package 3 Diode Table 5 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current Operating junction temperature Note: Datasheet Qrr Irrm dirr/dt VR = 400 V, RG(on) = 15 Ω VR = 400 V, RG(on) = 15 Ω VR = 400 V, RG(on) = 15 Ω Tvj Typ. Tvj = 25 °C, IF = 30 A, -diF/dt = 1700 A/µs 2.3 Tvj = 175 °C, IF = 30 A, -diF/dt = 1600 A/µs 3.8 Tvj = 25 °C, IF = 30 A, -diF/dt = 1700 A/µs 34 Tvj = 175 °C, IF = 30 A, -diF/dt = 1600 A/µs 48.3 Tvj = 25 °C, IF = 30 A, -diF/dt = 1700 A/µs 450 Tvj = 175 °C, IF = 30 A, -diF/dt = 1600 A/µs 900 -40 Unit Max. µC A A/µs 175 °C For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet. 6 Revision 1.10 2022-12-06 IKWH60N65WR6 TRENCHSTOP™ 5 WR6 technology in enhanced creepage and clearance package 4 Characteristics diagrams 4 Characteristics diagrams Reverse bias safe operating area IC = f(VCE) Tvj ≤ 175 °C, Tc = 25 °C, VGE = 15 V Power dissipation as a function of case temperature Ptot = f(Tc) Tvj ≤ 175 °C 240 200 100 160 120 10 80 40 0 1 1 10 100 1000 25 Collector current as a function of case temperature IC = f(Tc) Tvj ≤ 175 °C, VGE ≥ 15 V 50 75 100 125 150 175 Typical output characteristic IC = f(VCE) Tvj = 25 °C 110 250 100 90 200 80 70 150 60 50 100 40 30 50 20 10 0 0 25 Datasheet 50 75 100 125 150 175 0 7 1 2 3 4 5 Revision 1.10 2022-12-06 IKWH60N65WR6 TRENCHSTOP™ 5 WR6 technology in enhanced creepage and clearance package 4 Characteristics diagrams Typical output characteristic IC = f(VCE) Tvj = 175 °C Typical transfer characteristic IC = f(VGE) VCE = 20 V 250 160 140 200 120 100 150 80 100 60 40 50 20 0 0 0 1 2 3 4 5 3 Typical collector-emitter saturation voltage as a function of junction temperature VCEsat = f(Tvj) VGE = 15 V 4 5 6 7 8 Gate-emitter threshold voltage as a function of junction temperature VGEth = f(Tvj) IC = 0.2 mA 2.0 6 1.8 5 1.6 1.4 4 1.2 1.0 3 0.8 2 0.6 0.4 1 0.2 0.0 0 0 Datasheet 25 50 75 100 125 150 175 0 8 25 50 75 100 125 150 Revision 1.10 2022-12-06 IKWH60N65WR6 TRENCHSTOP™ 5 WR6 technology in enhanced creepage and clearance package 4 Characteristics diagrams Typical switching times as a function of collector current t = f(IC) VCC = 400 V, Tvj = 175 °C, VGE = 0/15 V, RG = 15 Ω Typical switching times as a function of gate resistor t = f(RG) IC = 60 A, VCC = 400 V, Tvj = 175 °C, VGE = 0/15 V 1000 1000 100 100 10 10 1 1 15 30 45 60 75 90 105 120 9 Typical switching times as a function of junction temperature t = f(Tvj) IC = 60 A, VCC = 400 V, VGE = 0/15 V, RG = 15 Ω 18 27 36 45 54 63 72 81 Typical switching energy losses as a function of collector current E = f(IC) VCC = 400 V, Tvj = 175 °C, VGE = 0/15 V, RG = 15 Ω 1000 8 7 6 100 5 4 3 10 2 1 1 25 Datasheet 50 75 100 125 150 0 175 0 9 20 40 60 80 100 120 Revision 1.10 2022-12-06 IKWH60N65WR6 TRENCHSTOP™ 5 WR6 technology in enhanced creepage and clearance package 4 Characteristics diagrams Typical switching energy losses as a function of gate resistor E = f(RG) IC = 60 A, VCC = 400 V, Tvj = 175 °C, VGE = 0/15 V Typical switching energy losses as a function of junction temperature E = f(Tvj) IC = 60 A, VCC = 400 V, VGE = 0/15 V, RG = 15 Ω 8 4.0 7 3.5 6 3.0 5 2.5 4 2.0 3 1.5 2 1.0 1 0.5 0.0 0 9 18 27 36 45 54 63 72 25 81 Typical switching energy losses as a function of collector emitter voltage E = f(VCE) IC = 60 A, Tvj = 175 °C, VGE = 0/15 V, RG = 15 Ω 50 75 100 125 150 175 Typical gate charge VGE = f(QG) IC = 60 A 5.0 16 4.5 14 4.0 12 3.5 10 3.0 2.5 8 2.0 6 1.5 4 1.0 2 0.5 0.0 200 Datasheet 0 250 300 350 400 450 500 0 10 20 40 60 80 100 120 140 160 180 Revision 1.10 2022-12-06 IKWH60N65WR6 TRENCHSTOP™ 5 WR6 technology in enhanced creepage and clearance package 4 Characteristics diagrams Typical capacitance as a function of collector-emitter voltage C = f(VCE) f = 100 kHz, VGE = 0 V IGBT transient thermal impedance as a function of pulse width Zth(j-c) = f(tp) D = tp/T 10000 1 1000 0.1 100 0.01 10 0.001 1E-6 1 0 5 10 15 20 25 30 Diode transient thermal impedance as a function of pulse width Zth(j-c) = f(tp) D = tp/T 10 1E-5 0.0001 0.001 0.01 0.1 1 Typical diode forward current as a function of forward voltage IF = f(VF) 250 200 1 150 0.1 100 0.01 50 0.001 1E-7 Datasheet 1E-6 1E-5 0.0001 0.001 0.01 0.1 0 1 0 11 1 2 3 4 5 Revision 1.10 2022-12-06 IKWH60N65WR6 TRENCHSTOP™ 5 WR6 technology in enhanced creepage and clearance package 4 Characteristics diagrams Typical diode forward voltage as a function of junction temperature VF = f(Tvj) Typical reverse recovery time as a function of diode current slope trr = f(diF/dt) VR = 400 V, IF = 30 A 2.5 250 225 2.0 200 175 1.5 150 125 1.0 100 75 0.5 50 25 0.0 0 25 50 75 100 125 150 0 175 500 Typical reverse recovery charge as a function of diode current slope Qrr = f(diF/dt) VR = 400 V, IF = 30 A 5.0 750 1000 1250 1500 1750 2000 Typical reverse recovery current as a function of diode current slope Irrm = f(diF/dt) VR = 400 V, IF = 30 A 60 4.5 50 4.0 40 3.5 3.0 30 2.5 20 2.0 10 1.5 1.0 500 Datasheet 0 750 1000 1250 1500 1750 2000 500 12 750 1000 1250 1500 1750 2000 Revision 1.10 2022-12-06 IKWH60N65WR6 TRENCHSTOP™ 5 WR6 technology in enhanced creepage and clearance package 4 Characteristics diagrams Typical diode peak rate of fall of reverse recovery current as a function of diode current slope dirr/dt = f(diF/dt) VR = 400 V, IF = 30 A Typical reverse energy losses as a function of diode current slope Erec = f(diF/dt) VR = 400 V, IF = 30 A 0 1.5 -100 1.3 -200 1.1 -300 -400 0.9 -500 0.6 -600 -700 0.4 -800 0.2 -900 -1000 500 750 1000 1250 1500 1750 0.0 500 2000 750 1000 1250 1500 1750 2000 Typical diode current slope as a function of gate resistor diF/dt = f(RG) VR = 400 V, IF = 30 A 2500 2100 1700 1300 900 500 9 Datasheet 18 27 36 45 54 63 72 81 13 Revision 1.10 2022-12-06 IKWH60N65WR6 TRENCHSTOP™ 5 WR6 technology in enhanced creepage and clearance package 5 Package outlines 5 Package outlines PG-TO247-3-STD-NN4.8 PACKAGE - GROUP NUMBER: DIMENSIONS A A1 A2 b b1 b2 b3 b4 c D D1 D2 D3 E E1 E2 e N L L1 PG-TO247-3-U04 MILLIMETERS MIN. MAX. 4.90 5.10 2.31 2.51 1.90 2.10 1.16 1.26 1.90 2.30 1.55 1.65 1.96 2.06 0.59 0.66 20.90 21.10 16.25 16.85 1.05 1.35 0.55 0.65 15.70 15.90 13.10 13.50 2.14 2.34 5.44 3 20.10 19.80 4.30 3.95 Figure 1 Datasheet 14 Revision 1.10 2022-12-06 IKWH60N65WR6 TRENCHSTOP™ 5 WR6 technology in enhanced creepage and clearance package 6 Testing conditions 6 Testing Conditions Testing conditions VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf t tr td(on) Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCC t3 t2 t3 t4 t Figure B. Figure 2 Datasheet 15 Revision 1.10 2022-12-06 IKWH60N65WR6 TRENCHSTOP™ 5 WR6 technology in enhanced creepage and clearance package Revision history Revision history Document revision Date of release Description of changes 1.00 2021-05-21 Final datasheet 1.10 2022-12-06 Update of “DC collector current, limited by Tvjmax” in table “Maximum rated values”, for 25°C and 100°C Transient gate-emitter voltage VGE in table “Maximum rated values” of IGBT changed to ±30V Update of diagram “Collector current as a function of case temperature”, IC = f(Tc) "Forward bias safe operating area” diagram renamed to “Reverse bias safe operating area” Correction of package outline dimensions Change package name to marketing name Editorial changes Datasheet 16 Revision 1.10 2022-12-06 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2022-12-06 Published by Infineon Technologies AG 81726 Munich, Germany © 2022 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-ABA918-002 Important notice The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. Warnings Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.