IKZA40N120CS7XKSA1

IKZA40N120CS7 Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology copacked with soft, fast recovery Emitter Controlled 7 diode TO-247-4 – 3Pin Features • • • • • • • • VCE = 1200 V IC = 40 A IGBT co-packed with full current, soft and low Qrr diode Low saturation voltage VCEsat = 2.0 V at Tvj = 175°C Optimized for hard switching topologies (2-L inverter, 3-L NPC T-type, ...) Short circuit ruggedness 8 µs Wide range of dv/dt controllability Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/ Potential applications • Industrial drives • Industrial power supplies • Solar inverters 2021-10-27 restricted Copyright © Infineon Techn Product validation • Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 Description Type Package Marking IKZA40N120CS7 PG-TO247-4-STD-NT3.7 K40MCS7 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.10 2023-01-23 IKZA40N120CS7 Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology Table of contents Table of contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 IGBT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 3 Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 4 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 6 Testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Datasheet 2 Revision 1.10 2023-01-23 IKZA40N120CS7 Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology 1 Package 1 Package Table 1 Characteristic values Parameter Symbol Note or test condition Values Min. Internal emitter inductance measured 5 mm (0.197 in.) from case LE Storage temperature Tstg Soldering temperature Tsold M Mounting torque Typ. Unit Max. 13 -55 nH 150 °C wave soldering 1.6 mm (0.063 in.) from case for 10 s 260 °C M3 screw, Maximum of mounting process: 3 0.6 Nm 40 K/W Thermal resistance, junction-ambient Rth(j-a) IGBT thermal resistance, junction-case Rth(j-c) 0.3 0.42 K/W Diode thermal resistance, junction-case Rth(j-c) 0.55 0.75 K/W 2 IGBT Table 2 Maximum rated values Parameter Collector-emitter voltage DC collector current, limited by Tvjmax Pulsed collector current, tp limited by Tvjmax Symbol Note or test condition VCE Values Unit 1200 V Tc = 25 °C 82 A Tc = 100 °C 56 Tvj ≥ 25 °C IC ICpulse Turn-off safe operating area 120 A 120 A ±20 V ±25 V 8 µs Tc = 25 °C 357 W Tc = 100 °C 179 VCE ≤ 1200 V, Tvj ≤ 175 °C Gate-emitter voltage VGE Transient gate-emitter voltage VGE tp ≤ 0.5 µs, D < 0.001 Short-circuit withstand time tSC VCC ≤ 600 V, VGE = 15 V, Allowed number of short circuits < 1000, Time between short circuits ≥ 1.0 s, Tvj = 150 °C Power dissipation Ptot Tvj ≤ 175 °C Datasheet 3 Revision 1.10 2023-01-23 IKZA40N120CS7 Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology 2 IGBT Table 3 Characteristic values Parameter Symbol Note or test condition Values Min. Typ. Max. Tvj = 25 °C 1.65 2 V Tvj = 175 °C 2 6.5 V 40 µA 100 nA Collector-emitter saturation voltage VCEsat Gate-emitter threshold voltage VGEth IC = 0.78 mA, VCE = VGE Zero gate-voltage collector current ICES VCE = 1200 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V Transconductance gfs IC = 40 A, VCE = 20 V, Tvj = 175 °C 17 S Short-circuit collector current ISC VCC ≤ 600 V, VGE = 15 V, tSC ≤ 8 µs, Allowed number of short circuits < 1000, Time between short circuits ≥ 1.0 s, Tvj = 150 °C 240 A Input capacitance Cies VCE = 25 V, VGE = 0 V, f = 100 kHz 5.5 nF Output capacitance Coes VCE = 25 V, VGE = 0 V, f = 100 kHz 120 pF Reverse transfer capacitance Cres VCE = 25 V, VGE = 0 V, f = 100 kHz 27 pF Gate charge QG IC = 40 A, VGE = 15 V, VCC = 960 V 230 nC VCC = 600 V, VGE = 0/15 V, Tvj = 25 °C, RG(on) = 4 Ω, RG(off) = 4 Ω IC = 40 A 28 ns Turn-on delay time IC = 40 A, VGE = 15 V Unit 5.1 Tvj = 25 °C Tvj = 175 °C td(on) Tvj = 175 °C, IC = 40 A Rise time (inductive load) tr VCC = 600 V, VGE = 0/15 V, Tvj = 25 °C, RG(on) = 4 Ω, RG(off) = 4 Ω IC = 40 A Tvj = 175 °C, IC = 40 A Turn-off delay time td(off) VCC = 600 V, VGE = 0/15 V, Tvj = 25 °C, RG(on) = 4 Ω, RG(off) = 4 Ω IC = 40 A Tvj = 175 °C, IC = 40 A Fall time (inductive load) tf VCC = 600 V, VGE = 0/15 V, Tvj = 25 °C, RG(on) = 4 Ω, RG(off) = 4 Ω IC = 40 A Tvj = 175 °C, IC = 40 A Turn-on energy Eon 5.7 VCC = 600 V, VGE = 0/15 V, Tvj = 25 °C, RG(on) = 4 Ω, RG(off) = 4 Ω IC = 40 A Tvj = 175 °C, IC = 40 A 3500 29 15 ns 19 176 ns 258 110 ns 260 1.23 mJ 2.1 (table continues...) Datasheet 4 Revision 1.10 2023-01-23 IKZA40N120CS7 Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology 3 Diode Table 3 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Typ. Unit Max. Turn-off energy Eoff VCC = 600 V, VGE = 0/15 V, Tvj = 25 °C, RG(on) = 4 Ω, RG(off) = 4 Ω IC = 40 A 1.78 mJ Total switching energy Ets VCC = 600 V, VGE = 0/15 V, Tvj = 25 °C, RG(on) = 4 Ω, RG(off) = 4 Ω IC = 40 A 3.01 mJ Tvj = 175 °C, IC = 40 A Operating junction temperature Note: 3 Tvj -40 175 °C Electrical Characteristic, at Tvj = 25°C, unless otherwise specified. Diode Table 4 Maximum rated values Parameter Symbol Note or test condition Diode forward current, limited by Tvjmax IF Diode pulsed current, tp limited by Tvjmax IFpulse Power dissipation Table 5 5.8 Ptot Values Unit Tc = 25 °C 69 A Tc = 100 °C 46 120 A Tc = 25 °C 208 W Tc = 100 °C 104 Characteristic values Parameter Symbol Note or test condition Values Min. Diode forward voltage Diode reverse recovery time Diode reverse recovery charge VF trr Qrr IF = 40 A VR = 600 V, RG(on) = 4 Ω VR = 600 V, RG(on) = 4 Ω Unit Typ. Max. Tvj = 25 °C 1.65 2.15 Tvj = 175 °C 1.6 Tvj = 25 °C, IF = 40 A 110 Tvj = 175 °C, IF = 40 A 220 Tvj = 25 °C, IF = 40 A 2.5 Tvj = 175 °C, IF = 40 A 6.3 V ns µC (table continues...) Datasheet 5 Revision 1.10 2023-01-23 IKZA40N120CS7 Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology 3 Diode Table 5 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current Reverse recovery energy Operating junction temperature Note: Datasheet Irrm dirr/dt Erec VR = 600 V, RG(on) = 4 Ω VR = 600 V, RG(on) = 4 Ω VR = 600 V, RG(on) = 4 Ω Tvj Typ. Tvj = 25 °C, IF = 40 A 63 Tvj = 175 °C, IF = 40 A 88 Tvj = 25 °C, IF = 40 A -1020 Tvj = 175 °C, IF = 40 A -1430 Tvj = 25 °C, IF = 40 A 0.89 Tvj = 175 °C, IF = 40 A 2.54 -40 Unit Max. A A/µs mJ 175 °C For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet. Dynamic test circuit, parasitic inductance Lσ = 30 nH, Cσ = 18 pF. 6 Revision 1.10 2023-01-23 IKZA40N120CS7 Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology 4 Characteristics diagrams 4 Characteristics diagrams Reverse bias safe operating area IC = f(VCE) Tvj ≤ 175 °C, VCE ≤ 1200 V Typical output characteristic IC = f(VCE) Tvj = 25 °C 120 100 100 80 10 60 40 1 20 0 0.1 1 10 100 1000 0 Typical output characteristic IC = f(VCE) Tvj = 175 °C 2 3 4 5 Typical transfer characteristic IC = f(VGE) VCE = 20 V 120 120 100 100 80 80 60 60 40 40 20 20 0 0 0 Datasheet 1 1 2 3 4 5 4 7 5 6 7 8 9 10 11 12 13 14 Revision 1.10 2023-01-23 IKZA40N120CS7 Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology 4 Characteristics diagrams Typical collector-emitter saturation voltage as a function of junction temperature VCEsat = f(Tvj) VGE = 15 V Gate-emitter threshold voltage as a function of junction temperature VGEth = f(Tvj) IC = 0.78 mA 4.0 8 3.5 7 3.0 2.5 6 2.0 5 1.5 1.0 4 0.5 0.0 3 25 50 75 100 125 150 175 25 Typical switching times as a function of collector current t = f(IC) VCC = 600 V, Tvj = 175 °C, VGE = 0/15 V, RG = 4 Ω 50 75 100 125 150 Typical switching times as a function of gate resistor t = f(RG) IC = 40 A, VCC = 600 V, Tvj = 175 °C, VGE = 0/15 V 10000 10000 1000 1000 100 100 10 1 10 0 Datasheet 10 20 30 40 50 60 70 80 3 8 6 9 12 15 18 21 24 27 30 Revision 1.10 2023-01-23 IKZA40N120CS7 Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology 4 Characteristics diagrams Typical switching times as a function of junction temperature t = f(Tvj) IC = 40 A, VCC = 600 V, VGE = 0/15 V, RG = 4 Ω Typical switching energy losses as a function of collector current E = f(IC) VCC = 600 V, Tvj = 175 °C, VGE = 0/15 V, RG = 4 Ω 10000 10 8 1000 6 100 4 10 2 1 25 50 75 100 125 150 0 175 0 Typical switching energy losses as a function of gate resistor E = f(RG) IC = 40 A, VCC = 600 V, Tvj = 175 °C, VGE = 0/15 V 10 20 30 40 50 60 70 80 Typical switching energy losses as a function of junction temperature E = f(Tvj) IC = 40 A, VCC = 600 V, VGE = 0/15 V, RG = 4 Ω 6 10 5 8 4 6 3 4 2 2 1 0 0 3 Datasheet 6 9 12 15 18 21 24 27 25 30 9 50 75 100 125 150 175 Revision 1.10 2023-01-23 IKZA40N120CS7 Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology 4 Characteristics diagrams Typical switching energy losses as a function of collector emitter voltage E = f(VCE) IC = 40 A, VGE = 0/15 V, Tvj = 175 °C, RG = 4 Ω Typical gate charge VGE = f(QG) IC = 40 A 9 16 8 14 7 12 6 10 5 8 4 6 3 4 2 2 1 0 0 400 450 500 550 600 650 700 750 800 0 Typical capacitance as a function of collector-emitter voltage C = f(VCE) f = 100 kHz, VGE = 0 V 10000 30 60 90 120 150 180 210 240 Typical short circuit collector current as a function of gate-emitter voltage IC(SC) = f(VGE) Tvj = 150 °C, VCC ≤ 600 V 300 250 1000 200 100 150 100 10 50 0 1 0 Datasheet 5 10 15 20 25 30 12 10 13 14 15 16 17 Revision 1.10 2023-01-23 IKZA40N120CS7 Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology 4 Characteristics diagrams Short circuit withstand time as a function of gateemitter voltage tSC = f(VGE) Tvj ≤ 150 °C, VCC ≤ 600 V IGBT transient thermal impedance as a function of pulse width Zth(j-c) = f(tp) D = tp/T 1 14 13 12 0.1 11 10 0.01 9 8 7 0.001 6 5 0.0001 1E-6 4 12 13 14 15 16 17 Diode transient thermal impedance as a function of pulse width Zth(j-c) = f(tp) D = tp/T 1 1E-5 0.0001 0.001 0.01 0.1 1 Typical diode forward current as a function of forward voltage IF = f(VF) 120 100 0.1 80 0.01 60 40 0.001 20 0.0001 1E-6 Datasheet 1E-5 0.0001 0.001 0.01 0.1 0 1 0.0 11 0.5 1.0 1.5 2.0 2.5 3.0 Revision 1.10 2023-01-23 IKZA40N120CS7 Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology 4 Characteristics diagrams Typical diode forward voltage as a function of junction temperature VF = f(Tvj) Typical diode current slope as a function of gate resistor diF/dt = f(RG) VR = 600 V, IF = 40 A 3.0 3000 2.5 2500 2.0 2000 1.5 1500 1.0 1000 0.5 25 50 75 100 125 150 500 175 3 Typical reverse recovery time as a function of diode current slope trr = f(diF/dt) VR = 600 V, IF = 40 A 8 350 7 300 6 250 5 200 4 150 3 100 2 50 1 12 15 18 21 24 27 30 0 500 Datasheet 9 Typical reverse recovery charge as a function of diode current slope Qrr = f(diF/dt) VR = 600 V, IF = 40 A 400 0 6 1000 1500 2000 2500 3000 500 12 1000 1500 2000 2500 3000 Revision 1.10 2023-01-23 IKZA40N120CS7 Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology 4 Characteristics diagrams Typical reverse recovery current as a function of diode current slope Irrm = f(diF/dt) VR = 600 V, IF = 40 A 90 Typical diode peak rate of fall of reverse recovery current as a function of diode current slope dirr/dt = f(diF/dt) VR = 600 V, IF = 40 A 0 80 -300 70 -600 60 50 -900 40 -1200 30 20 500 1000 1500 2000 2500 -1500 500 3000 1000 1500 2000 2500 3000 Typical reverse energy losses as a function of diode current slope Erec = f(diF/dt) VR = 600 V, IF = 40 A 3.0 2.5 2.0 1.5 1.0 0.5 0.0 500 Datasheet 1000 1500 2000 2500 3000 13 Revision 1.10 2023-01-23 IKZA40N120CS7 Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology 5 Package outlines 5 Package outlines PG-TO247-4-STD-NT3.7 PACKAGE - GROUP NUMBER: DIMENSIONS A A1 A2 A3 b b1 b2 b3 c D D1 D2 D3 D4 PG-TO247-4-U02 MILLIMETERS MIN. MAX. 4.90 5.10 2.31 2.51 1.90 2.10 0.05 0.25 1.10 1.30 0.65 0.79 --0.20 1.34 1.44 0.58 0.66 20.90 21.10 16.25 16.85 1.05 1.35 24.97 25.27 4.90 5.10 DIMENSIONS E E1 E2 e e1 e2 N L øP øP1 øP2 Q S T U MILLIMETERS MIN. MAX. 15.70 15.90 13.10 13.50 2.40 2.60 5.08 2.79 2.54 4 19.80 20.10 3.50 3.70 7.00 7.40 2.40 2.60 5.60 6.00 6.15 9.80 10.20 6.00 6.40 Figure 1 Datasheet 14 Revision 1.10 2023-01-23 IKZA40N120CS7 Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology 6 Testing conditions 6 Testing Conditions Testing conditions VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf t tr td(on) Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCC t3 t2 t3 t4 t Figure B. Figure 2 Datasheet 15 Revision 1.10 2023-01-23 IKZA40N120CS7 Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology Revision history Revision history Document revision Date of release Description of changes 0.10 2022-05-04 Target datasheet 1.00 2022-12-05 Final datasheet 1.10 2023-01-23 Correction of boundary condition of diagrams IC(SC) = f(VGE) and tSC = f(VGE) Datasheet 16 Revision 1.10 2023-01-23 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2023-01-23 Published by Infineon Technologies AG 81726 Munich, Germany © 2023 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-ABB778-003 Important notice The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. Warnings Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.