IM818MCCXKMA1

IM818-MCC Datasheet CIPOS™ Maxi IM818 IM818-MCC Description The CIPOS™ Maxi IM818 product group offers the chance for integrating various power and control components to increase reliability, optimize PCB size and system costs. It is designed to control three phase AC motors and permanent magnet motors in variable speed drives applications such as low power motor drives (GPI, Servo drives), pumps, fan drives and active filter for HVAC (Heating, Ventilation, and Air Conditioning). The product concept is specially adapted to power applications, which need good thermal performance and electrical isolation as well as EMI save control and overload protection. Three phase inverter with 1200V TRENCHSTOP™ IGBTs and Emitter Controlled diodes are combined with an optimized 6-channel SOI gate driver for excellent electrical performance. Features • Fully isolated Dual In-Line molded module • 1200V TRENCHSTOP™ IGBT4 • Rugged 1200V SOI gate driver technology with stability against transient and negative voltage • Allowable negative VS potential up to -11 V for signal transmission at VBS = 15 V • Integrated bootstrap functionality • Over current shutdown • Built-in NTC thermistor for temperature monitor • Under-voltage lockout at all channels • Low side emitter pins accessible for phase current monitoring (open emitter) • Anti cross-conduction • All of 6 switches turn off during protection • Programmable fault clear timing and enable input • Lead-free terminal plating; RoHS compliant Potential applications Fan drives and active filter for HVAC, pumps, and low power motor drives (GPI, Servo Drives) Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Table 1 Product Information Product Name Package Type IM818-MCC DIP 36x23D Datasheet www.infineon.com Standard Pack Form MOQ 14 pcs / tube 280 Please read the Important Notice and Warnings at the end of this document page 1 of 21 Remark V 2.3 2022-02-23 CIPOS™ Maxi IM818 IM818-MCC Table of Contents Table of Contents Description .................................................................................................................................... 1 Features ........................................................................................................................................ 1 Potential applications ..................................................................................................................... 1 Product validation .......................................................................................................................... 1 Table of Contents ........................................................................................................................... 2 1 Internal Electrical Schematic ................................................................................................... 3 2 2.1 2.2 Pin Configuration ................................................................................................................... 4 Pin Assignment ........................................................................................................................................ 4 Pin Description ........................................................................................................................................ 5 3 3.1 3.2 3.3 Absolute Maximum Ratings ..................................................................................................... 7 Module Section ........................................................................................................................................ 7 Inverter Section ....................................................................................................................................... 7 Control Section........................................................................................................................................ 7 4 Thermal Characteirstics .......................................................................................................... 8 5 Recommended Operation Conditions ....................................................................................... 9 6 6.1 6.2 Static Parameters ................................................................................................................. 10 Inverter Section ..................................................................................................................................... 10 Control Section...................................................................................................................................... 10 7 7.1 7.2 Dynamic Parameters ............................................................................................................. 11 Inverter Section ..................................................................................................................................... 11 Control Section...................................................................................................................................... 11 8 Thermistor Characteristics ..................................................................................................... 12 9 Mechanical Characteristics and Ratings ................................................................................... 13 10 Qualification Information....................................................................................................... 14 11 Diagrams and Tables ............................................................................................................. 15 11.1 TC Measurement Point ........................................................................................................................... 15 11.2 Backside Curvature Measurement Point .............................................................................................. 15 11.3 Switching Time Definition ..................................................................................................................... 16 12 Application Guide .................................................................................................................. 17 12.1 Typical Application Schematic ............................................................................................................. 17 12.2 Performance Charts .............................................................................................................................. 18 13 Package Outline .................................................................................................................... 19 Revision history............................................................................................................................. 20 Datasheet 2 of 21 V 2.3 2022-02-23 CIPOS™ Maxi IM818 IM818-MCC Internal Electrical Schematic 1 Internal Electrical Schematic P (24) (1) VS(U) (2) VB(U) VB1 HO1 RBS1 VS1 U (23) (3) VS(V) (4) VB(V) VB2 RBS2 HO2 VS2 V (22) (5) VS(W) (6) VB(W) VB3 RBS3 (7) HIN(U) HIN1 (8) HIN(V) HIN2 (9) HIN(W) HIN3 (10) LIN(U) LIN1 (11) LIN(V) LIN2 (12) LIN(W) LIN3 (13) VDD VDD (14) RFE RFE (15) ITRIP ITRIP (16) VSS VSS HO3 VS3 W (21) LO1 NU (20) LO2 NV (19) LO3 NW (18) (17) VTH Thermistor Figure 1 Datasheet Internal electrical schematic 3 of 21 V 2.3 2022-02-23 CIPOS™ Maxi IM818 IM818-MCC Pin Configuration 2 Pin Configuration 2.1 Pin Assignment Bottom view (24) P (1) VS(U) (2) VB(U) (3) VS(V) (4) VB(V) (23) U (5) VS(W) (6) VB(W) (22) V (7) HIN(U) (8) HIN(V) (9) HIN(W) (10) LIN(U) (11) LIN(V) (12) LIN(W) (13) VDD (14) RFE (15) ITRIP (16) VSS (17) VTH Figure 2 (21) W (20) NU (19) NV (18) NW Module pinout Table 2 Pin Assignment Pin Number Pin name Pin Description 1 VS(U) U-phase high side floating IC supply offset voltage 2 VB(U) U-phase high side floating IC supply voltage 3 VS(V) V-phase high side floating IC supply offset voltage 4 VB(V) V-phase high side floating IC supply voltage 5 VS(W) W-phase high side floating IC supply offset voltage 6 VB(W) W-phase high side floating IC supply voltage 7 HIN(U) U-phase high side gate driver input 8 HIN(V) V-phase high side gate driver input 9 HIN(W) W-phase high side gate driver input 10 LIN(U) U-phase low side gate driver input 11 LIN(V) V-phase low side gate driver input 12 LIN(W) W-phase low side gate driver input 13 VDD Low side control supply Datasheet 4 of 21 V 2.3 2022-02-23 CIPOS™ Maxi IM818 IM818-MCC Pin Configuration Pin Number Pin name Pin Description 14 RFE Programmable fault clear time, fault output, enable input 15 ITRIP Over current shutdown input 16 VSS Low side control negative supply 17 VTH Thermistor 18 NW W-phase low side emitter 19 NV V-phase low side emitter 20 NU U-phase low side emitter 21 W Motor W-phase output 22 V Motor V-phase output 23 U Motor U-phase output 24 P Positive bus input voltage 2.2 Pin Description It is not recommended for proper work to provide input pulse-width lower than 1 µs. HIN (U, V, W) and LIN (U, V, W) (Low side and high side control pins, Pin 7 - 12) The integrated gate driver provides additionally a shoot through prevention capability which avoids the simultaneous on-state of two gate drivers of the same leg (i.e. HO1 and LO1, HO2 and LO2, HO3 and LO3). When two inputs of a same leg are activated, only former activated one is activated so that the leg is kept steadily in a safe state. These pins are positive logic and they are responsible for the control of the integrated IGBTs. The schmitt-trigger input thresholds of them are such to guarantee LSTTL and CMOS compatibility down to 3.3 V controller outputs. Pull-down resistor of about 5 k is internally provided to pre-bias inputs during supply start-up. Input schmitt-trigger and noise filter provide beneficial noise rejection to short input pulses. A minimum deadtime insertion of typically 360 ns is also provided by driver IC, in order to reduce crossconduction of the external power switches. The noise filter suppresses control pulses which are below the filter time tFIL,IN. The filter acts according to Figure 4. RFE (Fault / Fault clear time / Enable, Pin 14) The RFE pin conbines three functions in one pin: programmable fault clear time by RC-network, faultout and enable input. CIPOSTM Schmitt-Trigger HINx LINx  5k VSS Figure 3 a) The programmable fault-clear time can be adjusted by RC network, which is external pull-up resistor and capacitor. For example, typical value is about 1ms at INPUT NOISE FILTER SWITCH LEVEL VIH; VIL 1 MΩ and 2 nF. Input pin structure tFIL,IN b) The fault-out indicates a module failure in case of under voltage at pin VDD or in case of triggered over current detection at ITRIP. tFIL,IN HIN LIN HIN LIN The microcontroller can pull this pin low to disable the IPM functionality. This is enable function. high HO LO Figure 4 Datasheet low HO LO Input filter timing diagram 5 of 21 V 2.3 2022-02-23 CIPOS™ Maxi IM818 IM818-MCC Pin Configuration The IC shuts down all the gate drivers power outputs, when the VDD supply voltage is below VDDUV- = 11.2 V. This prevents the external power switches from critically low gate voltage levels during on-state and therefore from excessive power dissipation. CIPOS Bi-direction Schmitt-Trigger NOISE FILTER RFE VSS Figure 5 1 RON,FLT From ITRIP - Latch From UV detection VB (U, V, W) and VS (U, V, W) (High side supplies, Pin 1 - 6) Internal circuit at pin RFE VB to VS is the high side supply voltage. The high side circuit can float with respect to VSS following the external high side power device emitter voltage. VTH (Thermistor, Pin 17) The VTH pin provides direct access to the NTC, which is referenced to VSS. An external pull-up resistor connected to +5 V ensures that the resulting voltage can be directly connected to the microcontroller. Due to the low power consumption, the floating driver stage is supplied by integrated bootstrap circuit. The under-voltage detection operates with a rising supply threshold of typical VBSUV+ = 11.2 V and a falling threshold of VBSUV- = 10.2 V. ITRIP (Over current detection function, Pin 15) IM818 provides an over current detection function by connecting the ITRIP input with the IGBT collector current feedback. The ITRIP comparator threshold (typ. 0.5 V) is referenced to VSS ground. An input noise filter (tITRIP = typ. 500 ns) prevents the driver to detect false over-current events. VS(U, V, W) provide a high robustness against negative voltage in respect of VSS of -50 V transiently. This ensures very stable designs even under rough conditions. NW, NV, NU (Low side emitter, Pin 18 - 20) Over current detection generates a shutdown of all outputs of the gate driver after the shutdown propagation delay of typically 1µs. The low side emitters are available for current measurements of each phase leg. It is recommended to keep the connection to pin VSS as short as possible in order to avoid unnecessary inductive voltage drops. Fault-clear time is set to typical 1.1ms at RRCIN = 1 M Ω and CRCIN = 2 nF. W, V, U (High side emitter and low side collector, Pin 21 - 23) VDD, VSS (Low side control supply and reference, Pin 13, 16) These pins are motor U, V, W input pins. VDD is the control supply and it provides power both to input logic and to output power stage. Input logic is referenced to VSS ground. P (Positive bus input voltage, Pin 24) The high side IGBTs are connected to the bus voltage. It is noted that the bus voltage does not exceed 900 V. The under-voltage circuit enables the device to operate at power on when a supply voltage of at least a typical voltage of VDDUV+ = 12.2 V is present. Datasheet 6 of 21 V 2.3 2022-02-23 CIPOS™ Maxi IM818 IM818-MCC Absolute Maximum Ratings 3 Absolute Maximum Ratings (VDD = 15V and TJ = 25°C, if not stated otherwise) 3.1 Module Section Description Symbol Storage temperature range TSTG Operating case temperature TC Operating junction temperature TJ Isolation test voltage VISO 3.2 Refer to Figure 6 1min, RMS, f = 60Hz Value Unit -40 ~ 125 °C -40 ~ 125 °C -40 ~150 °C 2500 V Value Unit 1200 V Inverter Section Description Symbol Max. blocking voltage Condition VCES/VRRM DC link supply voltage of P-N VPN Applied between P-N 900 V VPN(surge) Applied between P-N 1000 V TC = 25°C, TJ < 150°C ±16 TC = 80°C, TJ < 150°C ±10 TC = 25°C, tp < 1 ms ±20 A 67.5 W 10 µs Value Unit VS 1200 V Repetitive peak reverse voltage of bootstrap diode VRRM 1200 V Module control supply voltage VDD -1 ~ 20 V High side floating supply voltage (VB reference to VS) VBS -1 ~ 20 V Input voltage (LIN, HIN, ITRIP, RFE) VIN -1 ~ VDD + 0.3 V DC link supply voltage (surge) of P-N DC collector current IC Peak collector current ICP Power dissipation per IGBT Ptot Short circuit withstand time 1 3.3 tSC VDC ≤ 800 V, TJ = 150°C A Control Section Description High Side offset voltage 1 Condition Symbol Condition Allowed number of short circuits: < 1000; Time between short circuits: > 1 s. Datasheet 7 of 21 V 2.3 2022-02-23 CIPOS™ Maxi IM818 IM818-MCC Thermal Characteirstics 4 Thermal Characteirstics Description Symbol Condition Value Min. Typ. Max. Unit Single IGBT thermal resistance, junction-case RthJC High side V-phase IGBT - - 1.85 K/W Single diode thermal resistance, junction-case RthJC,D High side V-phase diode - - 2.50 K/W Datasheet 8 of 21 V 2.3 2022-02-23 CIPOS™ Maxi IM818 IM818-MCC Recommended Operation Conditions 5 Recommended Operation Conditions All voltages are absolute voltages referenced to VSS -potential unless otherwise specified. Description Symbol Value Min. Typ. Max. Unit DC link supply voltage of P-N VPN 350 600 800 V Low side supply voltage VDD 13.5 15 18.5 V High side floating supply voltage (VB vs. VS) VBS 12.5 - 18.5 V Logic input voltages LIN, HIN, ITRIP, RFE VIN 0 - 5 V PWM carrier frequency FPWM - - 20 kHz External dead time between HIN & LIN DT 0.5 - - µs VCOMP -5 - 5 V PWIN(ON) PWIN(OFF) 1 - - µs ΔVBS, ΔVDD -1 -1 - 1 1 V/µs Voltage between VSS - N (including surge) Minimum input pulse width Control supply variation Datasheet 9 of 21 V 2.3 2022-02-23 CIPOS™ Maxi IM818 IM818-MCC Static Parameters 6 Static Parameters (VDD = 15V and TJ = 25°C, if not stated otherwise) 6.1 Inverter Section Description Collector-Emitter saturation voltage Collector-Emitter leakage current Diode forward voltage 6.2 Symbol Condition Value Unit Min. Typ. Max. VCE(sat) IC = 10 A TJ = 25°C 150°C - 2.0 2.6 2.4 - V ICES VCE = 1200 V - - 1 mA VF IF = 10 A TJ = 25°C 150°C - 1.75 1.75 2.25 - V Control Section Description Symbol Condition Value Min. Typ. Max. Unit Logic "1" input voltage (LIN, HIN) VIH - 1.9 2.3 V Logic "0" input voltage (LIN, HIN) VIL 0.7 0.9 - V ITRIP positive going threshold VIT,TH+ 475 500 525 mV ITRIP input hysteresis VIT,HYS - 55 - mV VDD and VBS supply under voltage positive going threshold VDDUV+ VBSUV+ 11.5 10.5 12.2 11.2 13.0 12.0 V VDD / VBS supply under voltage negative going threshold VDDUVVBSUV- 10.5 9.5 11.2 10.2 12.0 11.0 V VDD / VBS supply under voltage lockout hysteresis VDDUVH VBSUVH - 1 - V Quiescent VBx supply current (VBx only) IQBS HIN = 0 V - 175 - µA Quiescent VDD supply current (VDD only) IQDD LIN = 0 V, HINX = 5 V - 1 - mA Input bias current for LIN, HIN IIN+ VIN = 5 V - 1 - mA IITRIP+ VITRIP = 5 V - 30 100 µA Input bias current for RFE IRFE VRFE = 5 V, VITRIP = 0 V - - 5 µA RFE output voltage VRFE IRFE = 10 mA, VITRIP = 1 V - 0.4 - V Input bias current for ITRIP VRFE positive going threshold VRFE,TH+ - 1.9 2.3 V VRFE negative going threshold VRFE,TH- 0.7 0.9 - V Bootstrap diode forward voltage VF_BSD IF = 0.3 mA - 0.9 - V Bootstrap diode resistance RBSD Between VF = 4 V and VF = 5 V - 120 - Ω Datasheet 10 of 21 V 2.3 2022-02-23 CIPOS™ Maxi IM818 IM818-MCC Dynamic Parameters 7 Dynamic Parameters (VDD = 15V and TJ = 25°C, if not stated otherwise) 7.1 Inverter Section Description Symbol Turn-on propagation delay time ton Turn-on rise time tr Turn-on switching time tc(on) Reverse recovery time trr Turn-off propagation delay time toff Turn-off fall time tf Condition VLIN, HIN = 5 V, IC = 10 A, VDC = 600 V VLIN, HIN = 0 V, IC = 10 A, VDC = 600 V Value Typ. Max. - 800 - ns - 45 - ns - 230 - ns - 420 - ns - 960 - ns - 100 - ns - 200 - ns - 1200 - ns Turn-off switching time tc(off) Short circuit propagation delay time tSCP From VIT,TH+ to 10% ISC Eon VDC = 600 V, IC = 10 A TJ = 25°C 150°C - 1.1 1.6 - Eoff VDC = 600 V, IC = 10 A TJ = 25°C 150°C - 0.6 0.9 - Erec VDC = 600 V, IC = 10 A TJ = 25°C 150°C - 0.3 0.6 - IGBT turn-on energy (includes reverse recovery of diode) IGBT turn-off energy Diode recovery energy 7.2 Unit Min. mJ mJ mJ Control Section Description Symbol Condition Value Unit Min. Typ. Max. Input filter time ITRIP tITRIP VITRIP = 1 V - 500 - ns Input filter time at LIN, HIN for turn on and off tFIL,IN VLIN, HIN = 0 V or 5 V - 350 - ns 1.1 - ms - 650 900 ns 300 - - ns - - 130 ns VITRIP = 1V, Fault clear time after ITRIP-fault tFLT,CLR Vpull-up = 5V (RRFE = 1 MΩ, CRFE = 2 nF) ITRIP to Fault propagation delay tFLT Internal deadtime DTIC Matching propagation delay time (On & Off) all channels MT Datasheet VLIN, HIN = 0 or 5 V, VITRIP = 1V VIN = 0 or VIN = 5 V External dead time > 500ns 11 of 21 V 2.3 2022-02-23 CIPOS™ Maxi IM818 IM818-MCC Thermistor Characteristics 8 Thermistor Characteristics Description Condition Resistor Symbol Unit Min. Typ. Max. RNTC - 85 - kΩ B (25/100) - 4092 - K TNTC = 25°C B-constant of NTC (Negative Temperature Coefficient) Value 3500 2500 2000 1500 30 Thermistor resistance [kΩ ] Thermistor resistance [kΩ ] 35 3000 Min. Typ. Max. 25 20 15 10 5 0 50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 125 130 1000 Thermistor temperature [℃] 500 0 -40 -30 -20 -10 0 Figure 6 10 20 30 40 50 60 70 80 90 100 110 120 130 Thermistor temperature [℃] Thermistor resistance – temperature curve and table (For more information, please refer to the application note ‘AN2019-16 CIPOS™ Maxi IM818 application note’) Datasheet 12 of 21 V 2.3 2022-02-23 CIPOS™ Maxi IM818 IM818-MCC Mechanical Characteristics and Ratings 9 Mechanical Characteristics and Ratings Description Comparative Tracking Index (CTI) Mounting torque Backside Curvature Weight Datasheet Condition M3 screw and washer Refer to Figure 8 13 of 21 Value Min. 600 0.49 0 - Typ. 7.1 Max. 0.78 150 - Unit Nm µm g V 2.3 2022-02-23 CIPOS™ Maxi IM818 IM818-MCC Qualification Information 10 Qualification Information UL Certification File number E314539 Moisture sensitivity level (SOP package only) - RoHS Compliant Yes (Lead-free terminal plating) ESD (Electrostatic Discharge) Datasheet HBM (Human body model) Class as per JESD22-A114 2 (>2000V to < 4000V) CDM (Charged Device model) Class as per JESD22-C101 C3 (>=1000V) 14 of 21 V 2.3 2022-02-23 CIPOS™ Maxi IM818 IM818-MCC Diagrams and Tables 11 Diagrams and Tables 11.1 TC Measurement Point Figure 7 11.2 Figure 8 TC measurement point1 Backside Curvature Measurement Point Backside curvature measurement position Any measurement except for the specified point in Figure 7 is not relevant for the temperature verification and brings wrong or different information. 1 Datasheet 15 of 21 V 2.3 2022-02-23 CIPOS™ Maxi IM818 IM818-MCC Diagrams and Tables 11.3 Switching Time Definition HINx LINx 2.1V 0.9V trr toff ton 10% iCx 90% 90% tf 10% tr 10% 10% 10% vCEx tc(on) tc(off) Figure 9 Datasheet Switching times definition 16 of 21 V 2.3 2022-02-23 CIPOS™ Maxi IM818 IM818-MCC Application Guide 12 Application Guide 12.1 Typical Application Schematic P (24) (1) VS(U) (2) VB(U) HO1 VB1 RBS1 VS1 U (23) (3) VS(V) #4 (4) VB(V) VB2 RBS2 HO2 VS2 V (22) 3-ph AC Motor (5) VS(W) (6) VB(W) VB3 RBS3 HO3 VS3 W (21) #5 #1 (7) HIN(U) (8) HIN(V) (9) HIN(W) (10) LIN(U) (11) LIN(V) Micro Controller HIN1 LO1 HIN2 NU (20) HIN3 LIN1 LIN2 LO2 (12) LIN(W) #6 LIN3 #7 NV (19) (13) VDD VDD line (14) RFE #2 (15) ITRIP (16) VSS (17) VT H #3.2 Temperature monitor RFE ITRIP LO3 NW (18) VSS Thermistor #3.1 5 or 3.3V line Control GND line 5 or 3.3V line Power GND line VDD U-phase current sensing V-phase current sensing W-phase current sensing Figure 10 Typical application circuit 1. Input circuit - To reduce input signal noise by high speed switching, the RIN and CIN filter circuit should be mounted. (100 Ω, 1 nF) - CIN should be placed as close to VSS pin as possible. 2. Itrip circuit - To prevent protection function errors, CITRIP should be placed as close to Itrip and VSS pins as possible. 3. RFE circuit 3.1 Pull-up resistor (RRFE) and pull-down capacitor (CRFE) - RFE output is an open drain output. This signal line should be pulled up to the positive side of the 5 V / 3.3 V control power supply voltage (VCTR) with a proper resistor RFE. - The fault-clear time is adjusted by RC network of RRFE and CRFE and pull-up voltage. 4. 5. 6. 7. ◼ tFLTCLR = -RRFE ∙ CRFE ∙ ln(1- VRFE,TH+/VCTR) + internal fault-clear time 160 s ◼ tFLTCLR = -1 M x 2 nF x ln(1 - 1.9 / 5 V) + 160s  1.1ms at RRFE = 1 M, CRFE = 2 nF and VCTR = 5 V ◼ A pull-up resistor is limited to max. 2 M ◼ In case of VCTR is higher than 5 V, the RRFE needs to be at least 200 k to limit the IC power dissipation 3.2 RC filter - It is recommended that RC filter be placed as close to the controller as possible. VB-VS circuit - Capacitor for high side floating supply voltage should be placed as close to VB and VS pins as possible. Snubber capacitor - The wiring between IM818 and snubber capacitor including shunt resistor should be as short as possible. Shunt resistor - The shunt resistor of SMD type should be used for reducing its stray inductance. Ground pattern - Ground pattern should be separated at only one point of shunt resistor as short as possible. Datasheet 17 of 21 V 2.3 2022-02-23 CIPOS™ Maxi IM818 IM818-MCC Application Guide 12.2 Performance Charts IM818-MCC Maximum Output Current, IO [Arms] 10 9 8 7 FSW=5kHz FSW=15kHz 6 5 4 3 VDC=600V, VDD=VBS=15V, SVPWM 2 TJ ≤150℃, TC ≤125oC, M.I.=0.8, P.F.=0.8 1 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 Case Temperature, TC [℃] Figure 11 Maximum operating current SOA1 This maximum operating current SOA is just one of example based on typical characteristics for this product. It can be changed by each user’s actual operating conditions. 1 Datasheet 18 of 21 V 2.3 2022-02-23 CIPOS™ Maxi IM818 IM818-MCC Package Outline 13 Datasheet Package Outline 19 of 21 V 2.3 2022-02-23 CIPOS™ Maxi IM818 IM818-MCC Revision history Revision history Document version Date of release Description of changes 2.0 2018-06-25 Initial release 2.1 2018-08-20 Minor change - Figure7, section 4(thermal resistance), section 10(qualification information), section 13(package outline) 2.2 2019-06-07 Corrected typo section 7.1(HINx, LINx = 0 V) Minor change – Table 1 and reference document (AN) number in figure 6 2.3 2022-02-23 Update notes (3.1) in section 12.1 Datasheet 20 of 21 V 2.3 2022-02-23 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2022-02-23 Published by Infineon Technologies AG 81726 München, Germany © 2022 Infineon Technologies AG. All Rights Reserved. Do you have a question about this document? Email: erratum@infineon.com Document reference ifx1 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. 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