IMBF170R650M1XTMA1

IMBF170R650M1 IMBF170R650M1 CoolSiC™ 1700V SiC Trench MOSFET Silicon Carbide MOSFET Features Drain  Revolutionary semiconductor material - Silicon Carbide  Optimized for fly-back topologies  12V/0V gate-source voltage compatible with most fly-back controllers  Very low switching losses  Benchmark gate threshold voltage, VGS(th) = 4.5V  Fully controllable dV/dt for EMI optimization Gate pin 1 Sense pin 2 Source pin 3~7 Benefits  Reduction of system complexity  Directly drive from fly-back controller  Efficiency improvement and cooling effort reduction  Enabling higher frequency Potential applications    Energy generation o Solar string inverter o Solar Central inverter Industrial power supplies o Industrial UPS o Industrial SMPS Infrastructure – Charger o Charger Product validation Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22 Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction recommended for forward operation mode only Table 1 Key Performance and Package Parameters Type IMBF170R650M1 VDS 1700V Datasheet www.infineon.com ID RDS(on) TC = 25°C, Rth(j-c,max) Tvj = 25°C, ID = 1.5A, VGS = 12V 7.4A 650mΩ Tvj,max Marking Package 175°C 170M1650 PG-TO263-7 Please read the Important Notice and Warnings at the end of this document page 1 of 15 2021-04-12 IMBF170R650M1 CoolSiC™ 1700V SiC Trench MOSFET Table of contents 1700V SiC Trench MOSFET Table of contents Features ........................................................................................................................................ 1 Benefits ......................................................................................................................................... 1 Potential applications ..................................................................................................................... 1 Product validation .......................................................................................................................... 1 Table of contents ............................................................................................................................ 2 1 Maximum ratings ................................................................................................................... 3 2 Thermal resistances ............................................................................................................... 4 3 3.1 3.2 3.3 Electrical Characteristics ........................................................................................................ 5 Static characteristics ............................................................................................................................... 5 Dynamic characteristics .......................................................................................................................... 6 Switching characteristics ........................................................................................................................ 7 4 Electrical characteristic diagrams ............................................................................................ 8 5 Package drawing................................................................................................................... 12 6 Test conditions ..................................................................................................................... 13 Revision history............................................................................................................................. 14 Datasheet 2 of 15 2.3 2021-04-12 IMBF170R650M1 CoolSiC™ 1700V SiC Trench MOSFET Maximum ratings 1 Maximum ratings For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet. Table 2 Maximum ratings Parameter Symbol Value Unit Drain-source voltage, Tvj ≥ 25°C VDSS 1700 V DC drain current for Rth(j-c,max), limited by Tvjmax, VGS = 12V, TC = 25°C TC = 100°C ID 7.4 5.2 A Pulsed drain current, tp limited by Tvjmax, VGS = 12V ID,pulse1 18.7 A Gate-source voltage2 Max transient voltage, < 1% duty cycle Recommended turn-on gate voltage Recommended turn-off gate voltage VGS VGS,on VGS,off -10… 20 12… 15 0 Power dissipation, limited by Tvjmax TC = 25°C TC = 100°C Ptot 88 44 W Virtual junction temperature Tvj -55… 175 °C Storage temperature Tstg -55… 150 °C Soldering temperature Reflow soldering (MSL1 according to JEDEC J-STD-020) Tsold 260 °C V verified by design Important note: The selection of positive and negative gate-source voltages impacts the long-term behavior of the device. The design guidelines described in Application Note AN2018-09 must be considered to ensure sound operation of the device over the planned lifetime. 1 2 Datasheet 3 of 15 2.3 2021-04-12 IMBF170R650M1 CoolSiC™ 1700V SiC Trench MOSFET Thermal resistances 2 Thermal resistances Table 3 Parameter Symbol MOSFET thermal resistance, junction – case Rth(j-c) Thermal resistance, junction – ambient Rth(j-a) Datasheet Value Conditions leaded 4 of 15 Unit min. typ. max. - 1.3 1.7 K/W - - 62 K/W 2.3 2021-04-12 IMBF170R650M1 CoolSiC™ 1700V SiC Trench MOSFET Electrical Characteristics 3 Electrical Characteristics 3.1 Static characteristics Table 4 Static characteristics (at Tvj = 25°C, unless otherwise specified) Parameter Drain-source on-state resistance Gate-source threshold voltage Symbol RDS(on) VGS(th) Conditions Value VGS = 12V, ID = 1.5A, Tvj = 25°C Tvj = 100°C Tvj = 175°C VGS = 15V, ID = 1.5A, Tvj = 25°C Unit min. typ. max. - 650 921 1324 - - 526 580 mΩ (tested after 1 ms pulse at VGS = 20V) ID = 1.7mA, VDS = VGS Tvj = 25°C Tvj =175°C 3.5 - 4.5 3.6 5.7 - VGS = 0V, VDS = 1700V Tvj = 25°C Tvj = 175°C - 0.6 8 11 - µA VGS = 20V, VDS = 0V - - 100 nA VGS = -10V, VDS = 0V - - -100 nA V Zero gate voltage drain current IDSS Gate-source leakage current IGSS Transconductance gfs VDS = 20V, ID = 1.5A - 0.65 - S Internal gate resistance RG,int f = 1MHz, VAC = 25mV - 25.4 - Ω Datasheet 5 of 15 2.3 2021-04-12 IMBF170R650M1 CoolSiC™ 1700V SiC Trench MOSFET Electrical Characteristics 3.2 Dynamic characteristics Table 5 Dynamic characteristics (at Tvj = 25°C, unless otherwise specified) Parameter Symbol Input capacitance Ciss Output capacitance Coss Reverse capacitance Crss Coss stored energy Eoss Total gate charge QG Gate to source charge QGS,pl Gate to drain charge QGD Datasheet Value Conditions VDD = 1000V, VGS = 0V, f = 1MHz, VAC = 25mV VDD = 1000V, ID = 1.5A, VGS = 0/12V, turn-on pulse 6 of 15 min. typ. max. - 422 - - 12 - - 1.1 - - 2 - - 8 - - 2.3 - - 3.3 - Unit pF µJ nC 2.3 2021-04-12 IMBF170R650M1 CoolSiC™ 1700V SiC Trench MOSFET Electrical Characteristics 3.3 Switching characteristics Table 6 Switching characteristics, Inductive load 3 Parameter Symbol Conditions Value Unit min. typ. max. - 22 - - 16 - - 24 - - 22 - - 50 - - 10 - - 60 - - 19 - - 13 - - 28 - - 24 - - 54 - - 13 - - 66 - MOSFET Characteristics, Tvj = 25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Etot VDD = 1000V, ID = 1.5A, VGS = 0/12V, RG,ext = 22Ω, Lσ = 40nH, diode: body diode at VGS = 0V see Fig. E ns µJ MOSFET Characteristics, Tvj = 175°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Etot VDD = 1000V, ID = 1.5A, VGS = 0/12V, RG,ext = 22Ω, Lσ = 40nH, diode: body diode at VGS = 0V see Fig. E ns µJ The chip technology was characterized up to 200 kV/µs. The measured dV/dt was limited by measurement test setup and package. In applications, e.g. fly-back topology, the switching behavior highly depends on the circuitry (transformer, snubber…), the switching loss in the application will be different from the datasheet value. 3 Datasheet 7 of 15 2.3 2021-04-12 IMBF170R650M1 CoolSiC™ 1700V SiC Trench MOSFET Electrical characteristic diagrams 4 Electrical characteristic diagrams 20 140 120 not for linear use 15 100 Ptot [W] IDS [A] Rth(j-c,max) Rth(j-c,typ) 10 80 60 40 5 20 0 0 0 500 1000 1500 0 2000 25 50 100 125 150 175 TC [ C] VDS [V] Figure 1 75 Safe operating area (SOA) (VGS = 0/12V, Tc = 25°C, Tj ≤ 175°C) Figure 2 10 Power dissipation as a function of case temperature limited by bond wire (Ptot = f(TC)) 35 Tvj=25°C 30 8 Tvj=175°C 6 IDS [A] IDS [A] 25 4 Rth(j-c,max) Rth(j-c,typ) 2 20 15 10 5 0 0 25 50 75 100 125 150 0 175 0 TC [ C] Figure 3 Datasheet Maximum DC drain to source current as a function of case temperature limited by bond wire (IDS = f(TC)) 5 10 15 20 VGS [V] Figure 4 8 of 15 Typical transfer characteristic (IDS = f(VGS), VDS = 20V, tP = 20µs) 2.3 2021-04-12 IMBF170R650M1 CoolSiC™ 1700V SiC Trench MOSFET Electrical characteristic diagrams 6 1 500 5 RDS (ON) [mOhm] VGS (th) [V] 4 3 2 1 000 500 VGS = 12V VGS = 15V 1 0 -50 -25 0 25 50 0 75 100 125 150 175 -50 -25 0 Tvj [ C] Figure 5 Tvj [ C] Typical gate-source threshold voltage as a function of junction temperature (VGS(th) = f(Tvj), IDS = 1.7mA, VGS = VDS) Figure 6 20 Typical on-resistance as a function of junction temperature (RDS(on) = f(Tvj), IDS = 1.5A) 15 15V 12V 9V 6V 15V 12V 9V 6V 10 IDS [A] 15 IDS [A] 25 50 75 100 125 150 175 10 5 5 0 0 5 10 15 0 20 0 VDS [V] Figure 7 Datasheet Typical output characteristic, VGS as parameter (IDS = f(VDS), Tvj=25°C, tP = 20µs) 5 10 15 20 VDS [V] Figure 8 9 of 15 Typical output characteristic, VGS as parameter (IDS = f(VDS), Tvj=175°C, tP = 20µs) 2.3 2021-04-12 IMBF170R650M1 CoolSiC™ 1700V SiC Trench MOSFET Electrical characteristic diagrams 15 1000 Ciss Coss Crss 10 C [pF] VGS [V] 100 10 5 1 1 10 100 0 1000 0 2 4 VDS[V] Figure 9 70 Etot Eon Eoff 125 60 50 E (µJ) 100 E (µJ) 10 Typical gate charge (VGS = f(QG), IDS = 1.5A, VDS = 1000V, turn-on pulse) Figure 10 150 75 50 40 Etot Eon Eoff 30 20 25 10 0 0 10 30 50 70 90 25 110 75 125 175 Tvj (°C) RG (Ohm) Datasheet 8 QG [nC] Typical capacitance as a function of drain-source voltage (C = f(VDS), VGS = 0V, f = 1MHz) Figure 11 6 Typical switching energy losses as a function of gate resistance (E = f(RG,ext), VDD = 1000V, VGS = 0V/12V, ID = 1.5A, Tvj = 175°C, ind. load, test circuit in Fig. E, diode: body diode at VGS = 0V) Figure 12 10 of 15 Typical switching energy losses as a function of junction temperature (E = f(Tvj), VDD = 1000V, VGS = 0V/12V, RG,ext = 22Ω, ID = 1.5A, ind. load, test circuit in Fig. E, diode: body diode at VGS = 0V) 2.3 2021-04-12 IMBF170R650M1 CoolSiC™ 1700V SiC Trench MOSFET Electrical characteristic diagrams 80 225 Etot Eon Eoff 200 175 60 Time [ns] 150 E (µJ) td(on) tr td(off) tf 70 125 100 75 50 40 30 20 50 10 25 0 0 1 2 3 4 5 10 30 ID (A) Figure 13 50 70 90 110 RG [Ohm] Typical switching energy losses as a function of drain-source current (E = f(IDS), VDD = 1000V, VGS = 0V/12V, RG,ext = 22Ω, Tvj = 175°C, ind. load, test circuit in Fig. E, diode: body diode at VGS = 0V) Figure 14 Typical switching times as a function of gate resistor (t = f(RG,ext), VDD = 1000V, VGS = 0V/12V, ID = 1.5A, Tvj = 175°C, ind. load, test circuit in Fig. E, diode: body diode at VGS = 0V) ZTHjc [K/W] 1E0 0.5 0.2 0.1 1E-1 0.05 0.02 0.01 Single pulse 1E-2 1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E0 tp [s] Figure 15 Datasheet Max. transient thermal resistance (MOSFET) (Zth(j-c,max) = f(tP), parameter D = tp/T, thermal equivalent circuit in Fig. D) 11 of 15 2.3 2021-04-12 IMBF170R650M1 CoolSiC™ 1700V SiC Trench MOSFET Package drawing 5 Package drawing PG-TO263-7-13 Figure 16 Datasheet Package drawing 12 of 15 2.3 2021-04-12 IMBF170R650M1 CoolSiC™ 1700V SiC Trench MOSFET Test conditions 6 Test conditions Figure 17 Test conditions Datasheet 13 of 15 2.3 2021-04-12 IMBF170R650M1 CoolSiC™ 1700V SiC Trench MOSFET Revision history Revision history Document version Date of release Description of changes 2.1 2020-04-27 Final Datasheet 2.2 2020-12-11 Correction of circuit symbol on page 1 2.3 2021-04-12 Editorial changes Datasheet 14 of 15 2.3 2021-04-12 Trademarks All referenced product or service names and trademarks are the property of their respective owners. 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