IMBG120R220M1H
IMBG120R220M1H
CoolSiC™ 1200V SiC Trench MOSFET
with .XT interconnection technology
Features
Very low switching losses
Short circuit withstand time 3 µs
Fully controllable dV/dt
Benchmark gate threshold voltage, VGS(th) = 4.5V
Robust against parasitic turn on, 0V turn-off gate voltage can be applied
Robust body diode for hard commutation
.XT interconnection technology for best-in-class thermal performance
Package creepage and clearance distance > 6.1mm
Sense pin for optimized switching performance
Drain
TAB
Gate
pin 1
Sense
pin 2
Source
pin 3...7
Benefits
Efficiency improvement
Enabling higher frequency
Increased power density
Cooling effort reduction
Reduction of system complexity and cost
Potential applications
Drives
Infrastructure – Charger
Energy generation - Solar string inverter and solar optimizer
Industrial power supplies - Industrial UPS
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22
Note:
the source and sense pins are not exchangeable, their exchange might lead to malfunction
Table 1
Key Performance and Package Parameters
Type
IMBG120R220M1H
VDS
1200V
Final Datasheet
www.infineon.com
ID
RDS(on
TC = 25°C, Rth(j-c,max)
Tvj = 25°C, ID = 4A, VGS = 18V
13A
220mΩ
Tvj,max
Marking
Package
175°C
12M1H220
PG-TO263-7
Please read the Important Notice and Warnings at the end of this document
page 1 of 17
2.2
2020-12-11
IMBG120R220M1H
CoolSiC™ 1200V SiC Trench MOSFET
Table of contents
1200V SiC Trench MOSFET
Table of contents
Features ........................................................................................................................................ 1
Benefits ......................................................................................................................................... 1
Potential applications ..................................................................................................................... 1
Product validation .......................................................................................................................... 1
Table of contents ............................................................................................................................ 2
1
Maximum ratings ................................................................................................................... 3
2
Thermal resistances ............................................................................................................... 4
3
3.1
3.2
3.3
Electrical Characteristics ........................................................................................................ 5
Static characteristics ............................................................................................................................... 5
Dynamic characteristics .......................................................................................................................... 6
Switching characteristics ........................................................................................................................ 7
4
Electrical characteristic diagrams ............................................................................................ 8
5
Package drawing................................................................................................................... 14
6
Test conditions ..................................................................................................................... 15
Revision history............................................................................................................................. 16
Final Datasheet
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IMBG120R220M1H
CoolSiC™ 1200V SiC Trench MOSFET
Maximum ratings
1
Maximum ratings
For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the
maximum ratings stated in this datasheet.
Table 2
Maximum ratings
Parameter
Symbol
Value
Unit
Drain-source voltage, Tvj ≥ 25°C
VDSS
1200
V
DC drain current for Rth(j-c,max), limited by Tvjmax, VGS = 18V,
TC = 25°C
TC = 100°C
ID
13
9.1
A
Pulsed drain current, tp limited by Tvjmax, VGS = 18V
ID,pulse1
33
A
DC body diode forward current for Rth(j-c,max),
limited by Tvjmax, VGS = 0V
TC = 25°C
TC = 100°C
ISD
Pulsed body diode current, tp limited by Tvjmax
ISD,pulse1
33
Gate-source voltage2
Max transient voltage, < 1% duty cycle
Recommended turn-on gate voltage
Recommended turn-off gate voltage
VGS
VGS,on
VGS,off
-7… 23
15… 18
0
Short-circuit withstand time
VDD = 800V, VDS,peak < 1200V, VGS,on = 15V, Tj,start = 25°C
tSC
3
Power dissipation, limited by Tvjmax
TC = 25°C
TC = 100°C
Ptot
83
42
W
Virtual junction temperature
Tvj
-55… 175
°C
Storage temperature
Tstg
-55… 150
°C
Soldering temperature
Reflow soldering (MSL1 according to JEDEC J-STD-020)
Tsold
260
°C
14
9.1
A
A
V
µs
verified by design
Important note: The selection of positive and negative gate-source voltages impacts the long-term behavior
of the device. The design guidelines described in Application Note AN2018-09 must be considered to ensure
sound operation of the device over the planned lifetime.
1
2
Final Datasheet
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IMBG120R220M1H
CoolSiC™ 1200V SiC Trench MOSFET
Thermal resistances
2
Thermal resistances
Table 3
Parameter
Symbol
MOSFET/body diode
thermal resistance,
junction – case
Rth(j-c)
Thermal resistance,
junction – ambient
Rth(j-a)
Final Datasheet
Value
Conditions
leaded
4 of 17
Unit
min.
typ.
max.
-
1.4
1.8
K/W
-
-
62
K/W
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2020-12-11
IMBG120R220M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical Characteristics
3
Electrical Characteristics
3.1
Static characteristics
Table 4
Static characteristics (at Tvj = 25°C, unless otherwise specified)
Parameter
Drain-source on-state
resistance
Symbol
RDS(on)
Body diode forward
voltage
VSD
Gate-source threshold
voltage
VGS(th)
Conditions
Value
VGS = 18V, ID = 4A,
Tvj = 25°C
Tvj = 100°C
Tvj = 175°C
VGS = 15V, ID = 4A,
Tvj = 25°C
VGS = 0V, ISD = 4A
Tvj = 25°C
Tvj = 100°C
Tvj = 175°C
Unit
min.
typ.
max.
-
220
280
416
294
-
-
280
372
-
4.1
4.0
3.9
5.2
-
mΩ
V
(tested after 1 ms pulse at
VGS = 20V)
ID = 1.6mA, VDS = VGS
Tvj = 25°C
Tvj =175°C
3.5
-
4.5
3.6
5.7
-
VGS = 0V, VDS = 1200V
Tvj = 25°C
Tvj = 175°C
-
0.2
0.6
95
-
µA
VGS = 23V, VDS = 0V
-
-
100
nA
VGS = -7V, VDS = 0V
-
-
-100
nA
V
Zero gate voltage drain
current
IDSS
Gate-source leakage
current
IGSS
Transconductance
gfs
VDS = 20V, ID = 4A
-
1.9
-
S
Internal gate resistance
RG,int
f = 1MHz, VAC = 25mV
-
22
-
Ω
Final Datasheet
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IMBG120R220M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical Characteristics
3.2
Dynamic characteristics
Table 5
Dynamic characteristics (at Tvj = 25°C, unless otherwise specified)
Parameter
Symbol
Input capacitance
Ciss
Output capacitance
Coss
Reverse capacitance
Crss
Coss stored energy
Eoss
Total gate charge
QG
Gate to source charge
QGS,pl
Gate to drain charge
QGD
Final Datasheet
Value
Conditions
VDD = 800V, VGS = 0V,
f = 1MHz, VAC = 25mV
VDD = 800V, ID = 4A,
VGS = 0/18V, turn-on pulse
6 of 17
min.
typ.
max.
-
312
-
-
14
-
-
1.5
-
-
-
-
6
9.4
-
2.4
-
-
2
-
Unit
pF
µJ
nC
2.2
2020-12-11
IMBG120R220M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical Characteristics
3.3
Switching characteristics
Table 6
Switching characteristics, Inductive load 3
Parameter
Symbol
Conditions
Value
Unit
min.
typ.
max.
-
6.5
-
-
1.1
-
-
16
-
-
11
-
-
48
-
-
10
-
-
58
-
-
75
-
nC
-
0.8
-
A
-
6.5
-
-
2.7
-
-
16
-
-
11
-
-
68
-
-
12
-
-
80
-
-
94
-
nC
-
1
-
A
MOSFET Characteristics, Tvj = 25°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Etot
VDD = 800V, ID = 4A,
VGS = 0/18V, RG,ext = 2Ω,
Lσ = 40nH,
diode:
body diode at VGS = 0V
see Fig. E
ns
µJ
Body Diode Characteristics, Tvj = 25°C
Diode reverse recovery
charge
Qrr
Diode peak reverse
recovery current
Irrm
VDD = 800V, ISD = 4A,
VGS at diode = 0V,
dif/dt = 1000A/µs,
Qrr includes also QC ,
see Fig. C
MOSFET Characteristics, Tvj = 175°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Etot
VDD = 800V, ID = 4A,
VGS = 0/18V, RG,ext = 2Ω,
Lσ = 40nH,
diode:
body diode at VGS = 0V
see Fig. E
ns
µJ
Body Diode Characteristics, Tvj = 175°C
Diode reverse recovery
charge
Qrr
Diode peak reverse
recovery current
Irrm
VDD = 800V, ISD = 4A,
VGS at diode = 0V,
dif/dt = 1000A/µs,
Qrr includes also QC ,
see Fig. C
The chip technology was characterized up to 200 kV/µs. The measured dV/dt was limited by measurement test
setup and package.
3
Final Datasheet
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IMBG120R220M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical characteristic diagrams
4
Electrical characteristic diagrams
90
35
80
30
not for linear use
70
60
Ptot [W]
IDS [A]
25
20
15
50
40
30
10
20
5
10
0
0
0
800
VDS [V]
Ptyp
0
1200
Safe operating area (SOA)
(VGS = 0/18V, Tc = 25°C, Tj ≤ 175°C)
Figure 2
16
16
14
14
12
12
10
10
ISD [A]
IDS [A]
Figure 1
400
Pmax stat
8
25
50
75 100 125 150 175
TC [ C]
Power dissipation as a function of case
temperature limited by bond wire
(Ptot = f(TC))
8
6
6
4
4
Imax
2
Imax
2
Rth_typ
Rth_typ
0
0
0
Figure 3
Final Datasheet
25 50 75 100 125 150 175
TC [ C]
Maximum DC drain to source current as Figure 4
a function of case temperature limited
by bond wire (IDS = f(TC))
8 of 17
0
25 50 75 100 125 150 175
TC [ C]
Maximum source to drain current as a
function of case temperature limited by
bond wire (ISD = f(TC), VGS = 0V)
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IMBG120R220M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical characteristic diagrams
50
6
Tvj=25°C
5
Tvj=175°C
VGS (th) [V]
IDS [A]
40
30
20
10
3
2
1
0
0
0
Figure 5
5
10
VGS [V]
15
20
Typical transfer characteristic
(IDS = f(VGS), VDS = 20V, tP = 20µs)
50
-50
Figure 6
20
50
100
Tvj [ C]
150
Typical gate-source threshold voltage
as a function of junction temperature
(VGS(th) = f(Tvj), IDS = 1.6mA, VGS = VDS)
20V
18V
16V
15V
14V
12V
10V
8V
6V
25
20
IDS [A]
30
0
30
20V
18V
16V
15V
14V
12V
10V
8V
6V
40
IDS [A]
4
15
10
10
5
0
0
0
Figure 7
Final Datasheet
4
8
12
VDS [V]
16
20
Typical output characteristic, VGS as
parameter
(IDS = f(VDS), Tvj=25°C, tP = 20µs)
0
Figure 8
9 of 17
4
8
12
VDS [V]
16
20
Typical output characteristic, VGS as
parameter
(IDS = f(VDS), Tvj=175°C, tP = 20µs)
2.2
2020-12-11
IMBG120R220M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical characteristic diagrams
700
18
VGS = 18V
16
VGS = 15V
14
500
12
400
10
VGS [V]
RDS (ON) [mOhm]
600
300
8
6
4
200
2
100
0
0
-2
-50
Figure 9
0
50
100
Tvj [ C]
150
0
Typical on-resistance as a function of
junction temperature
(RDS(on) = f(Tvj), IDS = 4A)
Figure 10
2
4
6
QG [nC]
8
10
Typical gate charge
(VGS = f(QG), IDS = 4A, VDS = 800V, turn-on
pulse)
6
1000
5
100
VSD [V]
C [pF]
4
10
1
3
2
Ciss
Coss
1
Crss
0.1
1
10
100
0
1000
-50
VDS[V]
Figure 11
Final Datasheet
Typical capacitance as a function of
drain-source voltage
(C = f(VDS), VGS = 0V, f = 1MHz)
Figure 12
10 of 17
0
50
100
Tvj [ C]
150
Typical body diode forward voltage as
function of junction temperature
(VSD=f(Tvj), VGS=0V, ISD=4A)
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2020-12-11
IMBG120R220M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical characteristic diagrams
30
30
VGS=18V
25
ISD [A]
ISD [A]
VGS=15V
20
20
15
10
15
10
VGS=0V
VGS=-2V
5
VGS=0V
VGS=-2V
5
0
0
0
Figure 13
2
4
6
VSD [V]
8
0
10
Typical body diode forward current as
function of forward voltage, VGS as
parameter
(ISD = f(VSD), Tvj = 25°C, tP = 20µs)
Figure 14
100
2
10
Eon
140
Eoff
70
8
Etot
160
Eon
80
4
6
VSD [V]
Typical body diode forward current as
function of forward voltage, VGS as
parameter
(ISD = f(VSD), Tvj = 175°C, tP = 20µs)
180
Etot
90
Eoff
120
60
E [µJ]
E [µJ]
VGS=18V
25
VGS=15V
50
40
100
80
30
60
20
40
10
20
0
0
25
Figure 15
Final Datasheet
50
75 100 125 150 175
Tvj [ C]
Typical switching energy losses as a
Figure 16
function of junction temperature
(E = f(Tvj), VDD = 800V, VGS = 0V/18V,
RG,ext = 2Ω, ID = 4A, ind. load, test circuit in
Fig. E, diode: body diode at VGS = 0V)
11 of 17
0
2
4
6
ID [A]
8
10
Typical switching energy losses as a
function of drain-source current
(E = f(IDS), VDD = 800V, VGS = 0V/18V,
RG,ext = 2Ω, Tvj = 175°C, ind. load, test
circuit in Fig. E, diode: body diode at VGS =
0V)
2.2
2020-12-11
IMBG120R220M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical characteristic diagrams
160
td(on)
35
tr
td(off)
30
Time [ns]
120
E [µJ]
40
Etot
Eon
Eoff
80
tf
25
20
15
10
40
5
0
0
0
Figure 17
20
40
RG [Ohm]
0
60
Typical switching energy losses as a
Figure 18
function of gate resistance
(E = f(RG,ext), VDD = 800V, VGS = 0V/18V,
ID = 4A, Tvj = 175°C, ind. load, test circuit in
Fig. E, diode: body diode at VGS = 0V)
20
40
RG [Ohm]
60
Typical switching times as a function of
gate resistor
(t = f(RG,ext), VDD = 800V, VGS = 0V/18V,
ID = 4A, Tvj = 175°C, ind. load, test circuit in
Fig. E, diode: body diode at VGS = 0V)
7
0.4
T = 175°C
6
T = 25°C
5
IRRM [A]
QRR [µC]
0.3
0.2
4
3
2
0.1
T = 175°C
1
T = 25°C
0
0.0
0
Figure 19
Final Datasheet
2000
4000
diF /dt[A/µs]
6000
0
Figure 20
Typical reverse recovery charge as a
function of diode current slope
(Qrr = f(dif/dt), VDD = 800V, VGS = 0V/18V,
ID = 4A, ind. load, test circuit in Fig.E, body
diode at VGS = 0V)
12 of 17
2000
4000
diF /dt[A/µs]
6000
Typical reverse recovery current as a
function of diode current slope
(Irrm = f(dif/dt), VDD = 800V, VGS = 0V/18V,
ID = 4A, ind. load, test circuit in Fig.E,
body diode at VGS = 0V)
2.2
2020-12-11
IMBG120R220M1H
CoolSiC™ 1200V SiC Trench MOSFET
Electrical characteristic diagrams
1E1
1E0
Zthjc [K/W]
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
1E-1
i:
ri: [K/W]
ti: [s]
1
7.3E-01
8.1E-03
2
3.6E-01
1.4E-04
3
5.8E-01
1.4E-03
4
1.3E-01
9.2E-06
1E-2
1E-6
1E-5
1E-4
1E-3
1E-2
1E-1
1E0
tp [s]
Figure 21
Final Datasheet
Max. transient thermal resistance (MOSFET/diode)
(Zth(j-c,max) = f(tP), parameter D = tp/T, thermal equivalent circuit in Fig. D)
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IMBG120R220M1H
CoolSiC™ 1200V SiC Trench MOSFET
Package drawing
5
Package drawing
Figure 22
Package drawing
Final Datasheet
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IMBG120R220M1H
CoolSiC™ 1200V SiC Trench MOSFET
Test conditions
6
Test conditions
Figure 23
Test conditions
Final Datasheet
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IMBG120R220M1H
1200V SiC Trench MOSFET
Revision history
Revision history
Document
version
Date of release
Description of changes
2.1
2020-09-01
Final Datasheet
2.2
2020-12-11
Correction of circuit symbol on page 1
Final Datasheet
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2.2
2020-12-11
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2020.
owners.
All Rights Reserved.
Important notice
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
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Electronics Council.
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Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
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