IMW120R007M1HXKSA1

IMW120R007M1H CoolSiC™ 1200 V SiC Trench MOSFET CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET TO-247 – 3Pin Features • • • • • • • • VDSS = 1200 V at Tvj = 25°C IDDC = 225 A at Tc = 25°C RDS(on) = 7 mΩ at VGS = 18 V, Tvj = 25°C Very low switching losses Benchmark gate threshold voltage, VGS(th) = 4.2 V Robust against parasitic turn on, 0 V turn-off gate voltage can be applied Robust body diode for hard commutation .XT interconnection technology for best-in-class thermal performance Potential applications • • • • • General purpose drives (GPD) EV-Charging Online UPS/Industrial UPS String inverter Solar optimizer 2021-10-27 restricted Copyright © Infineon T Product validation • Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 • Please also note the application note AN2019-05 for power and thermal cycling Description 1 – gate 2 – drain 3 – source Type Package Marking IMW120R007M1H PG-TO247-3-STD-NN2.5 12M1H007 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.20 2023-05-08 IMW120R007M1H CoolSiC™ 1200 V SiC Trench MOSFET Table of contents Table of contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 3 Body diode (MOSFET) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 6 Testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Datasheet 2 Revision 1.20 2023-05-08 IMW120R007M1H CoolSiC™ 1200 V SiC Trench MOSFET 1 Package 1 Package Table 1 Characteristic values Parameter Symbol Note or test condition Values Min. Storage temperature Tstg Soldering temperature Tsold M Mounting torque Thermal resistance, junction-ambient Rth(j-a) MOSFET/body diode thermal resistance, junction-case Rth(j-c) 2 -55 Max. 150 °C wave soldering 1.6 mm (0.063 in.) from case for 10 s 260 °C M3 screw, Maximum of mounting processes: 3 0.6 Nm 62 K/W 0.20 K/W 0.15 MOSFET Table 2 Maximum rated values Parameter Symbol Note or test condition Drain-source voltage VDSS Tvj ≥ 25 °C Continuous DC drain current for Rth(j-c,max), limited by Tvj(max) IDDC VGS = 18 V Peak drain current, tp limited by Tvj(max) IDM VGS = 18 V Gate-source voltage, max. transient voltage1) VGS tp ≤ 0.5 µs, D < 0.001 Gate-source voltage, max. static voltage VGS Avalanche energy, single pulse EAS Avalanche energy, repetitive EAR MOSFET dv/dt robustness dv/dt Power dissipation, limited by Tvj(max) Ptot 1) Typ. Unit Values Unit 1200 V Tc = 25 °C 225 A Tc = 100 °C 168 504 A -10/23 V -7/20 V ID = 35 A, VDD = 50 V, L = 1 mH 638 mJ ID = 35 A, VDD = 50 V, L = 5.2 µH 3.2 mJ VDS = 0...800 V 150 V/ns Tc = 25 °C 750 W Tc = 100 °C 375 Important note: The selection of positive and negative gate-source voltages impacts the long-term behavior of the device. The design guidelines described in Application Note AN2018-09 must be considered to ensure sound operation of the device over the planned lifetime. Datasheet 3 Revision 1.20 2023-05-08 IMW120R007M1H CoolSiC™ 1200 V SiC Trench MOSFET 2 MOSFET Table 3 Recommended values Parameter Symbol Note or test condition Values Unit Recommended turn-on gate voltage VGS(on) 15...18 V Recommended turn-off gate voltage VGS(off) -5...0 V Values Unit Table 4 Characteristic values Parameter Symbol Note or test condition Min. Drain-source on-state resistance RDS(on) Gate-source threshold voltage VGS(th) Zero gate-voltage drain current IDSS Gate leakage current IGSS Forward transconductance Internal gate resistance ID = 108 A Typ. Max. Tvj = 25 °C, VGS(on) = 18 V 7 9.9 Tvj = 100 °C, VGS(on) = 18 V 10 Tvj = 175 °C, VGS(on) = 18 V 14 Tvj = 25 °C, VGS(on) = 15 V 8.9 11.1 4.2 5.2 V 860 µA VGS = 23 V 300 nA VGS = -10 V -300 ID = 47 mA, VDS = VGS (tested after 1 ms pulse at VGS = 20 V) Tvj = 25 °C VDS = 1200 V, VGS = 0 V Tvj = 25 °C Tvj = 175 °C Tvj = 175 °C gfs RG,int VDS = 0 V 3.5 mΩ 3.6 15 ID = 108 A, VDS = 20 V 72.6 S f = 1 MHz, VAC = 25 mV 1.8 Ω Input capacitance Ciss VDD = 800 V, VGS = 0 V, f = 100 kHz, VAC = 25 mV 9170 pF Output capacitance Coss VDD = 800 V, VGS = 0 V, f = 100 kHz, VAC = 25 mV 420 pF Reverse transfer capacitance Crss VDD = 800 V, VGS = 0 V, f = 100 kHz, VAC = 25 mV 61 pF Coss stored energy Eoss VDD = 800 V, VGS = 0 V, f = 100 kHz, VAC = 25 mV 172 µJ Total gate charge QG VDD = 800 V, ID = 108 A, VGS = 0/18 V, turn-on pulse 289 nC Plateau gate charge QGS(pl) VDD = 800 V, ID = 108 A, VGS = 0/18 V, turn-on pulse 71.8 nC Gate-to-drain charge QGD VDD = 800 V, ID = 108 A, VGS = 0/18 V, turn-on pulse 57.7 nC (table continues...) Datasheet 4 Revision 1.20 2023-05-08 IMW120R007M1H CoolSiC™ 1200 V SiC Trench MOSFET 2 MOSFET Table 4 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Virtual junction temperature Datasheet td(on) tr td(off) tf Eon Eoff Etot Typ. VDD = 800 V, ID = 108 A, Tvj = 25 °C VGS = 0/18 V, Tvj = 175 °C RGS(on) = 1 Ω, RGS(off) = 1 Ω, Lσ = 15 nH, diode: body diode at VGS = 0 V 62 VDD = 800 V, ID = 108 A, Tvj = 25 °C VGS = 0/18 V, Tvj = 175 °C RGS(on) = 1 Ω, RGS(off) = 1 Ω, Lσ = 15 nH, diode: body diode at VGS = 0 V 58 VDD = 800 V, ID = 108 A, Tvj = 25 °C VGS = 0/18 V, Tvj = 175 °C RGS(on) = 1 Ω, RGS(off) = 1 Ω, Lσ = 15 nH, diode: body diode at VGS = 0 V 77 VDD = 800 V, ID = 108 A, Tvj = 25 °C VGS = 0/18 V, Tvj = 175 °C RGS(on) = 1 Ω, RGS(off) = 1 Ω, Lσ = 15 nH, diode: body diode at VGS = 0 V 44 ns ns 75 ns 85 ns 44 2900 VDD = 800 V, ID = 108 A, Tvj = 25 °C VGS = 0/18 V, Tvj = 175 °C RGS(on) = 1 Ω, RGS(off) = 1 Ω, Lσ = 15 nH, diode: body diode at VGS = 0 V 1200 VDD = 800 V, ID = 108 A, Tvj = 25 °C VGS = 0/18 V, Tvj = 175 °C RGS(on) = 1 Ω, RGS(off) = 1 Ω, Lσ = 15 nH, diode: body diode at VGS = 0 V 4561 µJ 3470 µJ 1320 µJ 6028 -55 5 Max. 55 VDD = 800 V, ID = 108 A, Tvj = 25 °C VGS = 0/18 V, Tvj = 175 °C RGS(on) = 1 Ω, RGS(off) = 1 Ω, Lσ = 15 nH, diode: body diode at VGS = 0 V Tvj Unit 175 °C Revision 1.20 2023-05-08 IMW120R007M1H CoolSiC™ 1200 V SiC Trench MOSFET 3 Body diode (MOSFET) Note: For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet. The chip technology was characterized up to 200 kV/µs. The measured dV/dt was limited by measurement test setup and package. Dynamic test circuit see Fig. F. 3 Table 5 Body diode (MOSFET) Maximum rated values Parameter Symbol Note or test condition Drain-source voltage VDSS Tvj ≥ 25 °C Continuous reverse drain current for Rth(j-c,max), limited by Tvj(max) ISDC VGS = 0 V Peak reverse drain current, tp limited by Tvj(max) ISM Table 6 Values Unit 1200 V Tc = 25 °C 205 A Tc = 100 °C 125 VGS = 0 V A Values Unit Characteristic values Parameter Symbol Note or test condition Min. Drain-source reverse voltage VSD MOSFET forward recovery charge Qfr MOSFET peak forward recovery current Ifrm MOSFET forward recovery energy Efr Virtual junction temperature Tvj Datasheet 504 Typ. Max. Tvj = 25 °C 3.8 5 Tvj = 100 °C 3.7 Tvj = 175 °C 3.6 VDD = 800 V, ISD = 108 A, VGS = 0 V, diSD/dt = 3000 A/µs, Qfr includes also QC Tvj = 25 °C 900 Tvj = 175 °C 1651 VDD = 800 V, ISD = 108 A, VGS = 0 V, diSD/dt = 3000 A/µs, Qfr includes also QC Tvj = 25 °C 7 Tvj = 175 °C 8 VDD = 800 V, ISD = 108 A, VGS = 0 V, diSD/dt = 3000 A/µs, Qfr includes also QC Tvj = 25 °C 461 Tvj = 175 °C 1238 ISD = 108 A, VGS = 0 V -55 6 V nC A µJ 175 °C Revision 1.20 2023-05-08 IMW120R007M1H CoolSiC™ 1200 V SiC Trench MOSFET 4 Characteristics diagrams 4 Characteristics diagrams Reverse bias safe operating area (RBSOA) IDS = f(VDS) Tvj ≤ 175 °C, VGS = 0/18 V, Tc = 25 °C Power dissipation as a function of case temperature limited by bond wire Ptot = f(Tc) 600 800 700 500 600 400 500 300 400 300 200 200 100 100 0 0 0 200 400 600 800 1000 1200 1400 0 Maximum DC drain to source current as a function of case temperature limited by bond wire IDS = f(Tc) 300 250 250 200 200 150 150 100 100 50 50 75 100 125 150 175 0 0 Datasheet 50 Maximum source to drain current as a function of case temperature limited by bond wire ISD = f(Tc) VGS = 0 V 300 0 25 25 50 75 100 125 150 175 0 7 25 50 75 100 125 150 175 Revision 1.20 2023-05-08 IMW120R007M1H CoolSiC™ 1200 V SiC Trench MOSFET 4 Characteristics diagrams Typical transfer characteristic IDS = f(VGS) VDS = 20 V, tp = 20 µs Typical gate-source threshold voltage as a function of junction temperature VGS(th) = f(Tvj) ID = 47 mA 6.0 1800 1600 5.0 1400 4.0 1200 1000 3.0 800 2.0 600 400 1.0 200 0.0 0 0 4 8 12 16 -50 20 Typical output characteristic, VGS as parameter IDS = f(VDS) Tvj = 25 °C, tp = 20 µs 0 25 50 75 100 125 150 175 Typical output characteristic, VGS as parameter IDS = f(VDS) Tvj = 175 °C, tp = 20 µs 1000 1000 900 900 800 800 700 700 600 600 500 500 400 400 300 300 200 200 100 100 0 0 0 Datasheet -25 4 8 12 16 20 0 8 4 8 12 16 20 Revision 1.20 2023-05-08 IMW120R007M1H CoolSiC™ 1200 V SiC Trench MOSFET 4 Characteristics diagrams Typical on-state resistance as a function of junction temperature RDS(on) = f(Tvj) ID = 108 A Typical gate charge VGS = f(QG) ID = 108 A, VDS = 800 V 25 18 16 20 14 12 15 10 8 10 6 4 5 2 0 -50 -25 0 25 50 75 100 125 150 0 175 0 Typical capacitance as a function of drain-source voltage C = f(VDS) f = 100 kHz, VGS = 0 V 60 120 180 240 300 Typical reverse drain voltage as function of junction temperature VSD = f(Tvj) ISD = 108 A, VGS = 0 V 6 10000 5 1000 4 3 100 2 10 1 0 1 1 Datasheet 10 100 -50 1000 9 -25 0 25 50 75 100 125 150 175 Revision 1.20 2023-05-08 IMW120R007M1H CoolSiC™ 1200 V SiC Trench MOSFET 4 Characteristics diagrams Typical reverse drain current as function of reverse drain voltage, VGS as parameter ISD = f(VSD) Tvj = 175 °C, tp = 20 µs Typical reverse drain current as function of reverse drain voltage, VGS as parameter ISD = f(VSD) Tvj = 25 °C, tp = 20 µs 500 500 450 450 400 400 350 350 300 300 250 250 200 200 150 150 100 100 50 50 0 0 0 1 2 3 4 5 6 0 Typical switching energy as a function of junction temperature, test circuit in Fig. F, 2nd device own body diode: VGS = 0 V E = f(Tvj) VGS = 0/18 V, ID = 108 A, RG,ext = 1 Ω, VDD = 800 V 18000 8000 16000 7000 14000 6000 12000 5000 10000 4000 8000 3000 6000 2000 4000 1000 2000 0 Datasheet 50 75 100 125 150 2 3 4 5 6 Typical switching energy as a function of drain current, test circuit in Fig. F, 2nd device own body diode: VGS = 0 V E = f(ID) Tvj = 175 °C, RG,ext = 1 Ω, VDD = 800 V, VGS = 0/18 V 9000 25 1 0 175 40 10 60 80 100 120 140 160 180 200 220 Revision 1.20 2023-05-08 IMW120R007M1H CoolSiC™ 1200 V SiC Trench MOSFET 4 Characteristics diagrams Typical switching energy losses as a function of gate resistance, test circuit in Fig. F, 2nd device own body diode: VGS = 0 V E = f(RG,ext) VGS = 0/18 V, ID = 108 A, Tvj = °C, VDD = 800 V 20000 Typical switching times as a function of gate resistance, test circuit in Fig. F, 2nd device own body diode: VGS = 0 V t = f(RG,ext) VGS = 0/18 V, ID = 108 A, Tvj = 175 °C, VDD = 800 V 800 16000 600 12000 400 8000 200 4000 0 0 0 10 20 30 40 50 0 Typical reverse recovery charge as a function of revere drain current slope, test circuit in Fig. F, 2nd device own body diode: VGS = 0 V Qfr = f(diSD/dt ) VGS = 0/18 V, ISD = 108 A, VDD = 800 V 20 30 40 50 Typical reverse recovery current as a function of reverse drain current slope, test circuit in Fig. F, 2nd device own body diode: VGS = 0 V Ifrm = f(diSD/dt ) VGS = 0/18 V, ISD = 108 A, VDD = 800 V 2.00 15 1.60 12 1.20 9 0.80 6 0.40 3 0.00 0 0 Datasheet 10 1000 2000 3000 4000 5000 6000 0 11 1000 2000 3000 4000 5000 6000 Revision 1.20 2023-05-08 IMW120R007M1H CoolSiC™ 1200 V SiC Trench MOSFET 4 Characteristics diagrams Typical switching energy losses as a function of dead time / blanking time, test circuit in Fig. F, 2nd device own body diode: VGS = -5 V E = f(tdead) VGS = -5/18 V, ID = 108 A, Tvj = 175 °C, VDD = 800 V Max. transient thermal impedance (MOSFET/diode) Zth(j-c),max = f(tp) D = tp/T 1 4000 3500 3000 0.1 2500 2000 1500 0.01 1000 500 0.001 1E-5 0 50 Datasheet 250 450 650 850 1050 12 0.0001 0.001 0.01 0.1 1 Revision 1.20 2023-05-08 IMW120R007M1H CoolSiC™ 1200 V SiC Trench MOSFET 5 Package outlines 5 Package outlines PG-TO247-3-STD-NN2.5 PACKAGE - GROUP NUMBER: DIMENSIONS A A1 A2 b b1 b2 c D D1 D2 E E1 E2 E3 e N L L1 øP Q S PG-TO247-3-U06 MILLIMETERS MIN. MAX. 4.83 5.21 2.27 2.54 1.85 2.16 1.07 1.33 1.90 2.41 2.87 3.38 0.55 0.68 20.80 21.10 16.25 17.65 0.95 1.35 15.70 16.13 13.10 14.15 3.68 5.10 1.00 2.60 5.44 3 20.32 19.80 4.10 4.47 3.50 3.70 6.00 5.49 6.04 6.30 Figure 1 Datasheet 13 Revision 1.20 2023-05-08 IMW120R007M1H CoolSiC™ 1200 V SiC Trench MOSFET 6 Testing conditions 6 Testing conditions I,V VDS 90% diSD/dt tfr = ta + tb Qfr = Qa + Qb ISD ta 10% VGS td(on) td(off) tr ton Ifrm tf toff Qa tfr tb Qb t 10% Ifrm VSD Figure A. Definition of switching times VGS(t) Figure B. Definition of body diode switching characteristics 90% VGS VGS,VDS Q 97% VDS VGS = 18 V 10% VGS t ID(t) 1% ID t VDS VDS(t) QGS,pl QGD t, Q QG,tot Figure D. Definition of QGD ½Lσ Eon = t4 t3 ʃ VDS *ID*dt Eoff = t2 t1 ʃ VDS *ID*dt t1 t2 t3 t4 second device 3% VDS t Figure C. Definition of switching losses L Cσ VGS(off) VDD τ1/r1 τ2/r2 τn/rn RG Tj(t) DUT p(t) r1 r2 r3 TC = M = Figure E. Thermal equivalent circuit ½Lσ Figure F. Dynamic test circuit Parasitic inductance Lσ, Parasitic capacitor Cσ, Figure 2 Datasheet 14 Revision 1.20 2023-05-08 IMW120R007M1H CoolSiC™ 1200 V SiC Trench MOSFET Revision history Revision history Document revision Date of release Description of changes 1.00 2022-02-02 Final datasheet 1.10 2022-08-10 Change of test condition of dynamic capacitances in Table 4, “Characteristic values” (Ciss, Coss, Crss): VDD= 25 V to VDD= 800 V Correction of unit of “Input capacitance” Ciss from nF to pF Change of VGS “Gate-source voltage, max. static voltage” in Table 2, “Maximum rated values” from -5/20 V to -7/20 V Editorial changes in “Features” on page 1 Editorial changes in “Package” on page 1 Correction of unit of x-axis at diagram “Max. transient thermal impedance (MOSFET/diode)” from µs to s, on page 13 1.20 2023-05-08 Correction of gate charge values in Table 4 Editorial changes Datasheet 15 Revision 1.20 2023-05-08 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2023-05-08 Published by Infineon Technologies AG 81726 Munich, Germany © 2023 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-ABA860-003 Important notice The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. Warnings Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.