IMW65R027M1HXKSA1

IMW65R027M1H MOSFET 650VCoolSiCªM1SiCTrenchPowerDevice PG-TO247-3 The650VCoolSiC™isbuiltoverthesolidsiliconcarbidetechnology developedinInfineoninmorethan20years.Leveragingthewidebandgap SiCmaterialcharacteristics,the650VCoolSiC™MOSFEToffersaunique combinationofperformance,reliabilityandeaseofuse.Suitableforhigh temperatureandharshoperations,itenablesthesimplifiedandcost effectivedeploymentofthehighestsystemefficiency. Tab 1 2 3 Features •Optimizedswitchingbehaviorathighercurrents •CommutationrobustfastbodydiodewithlowQrr •Superiorgateoxidereliability •Bestthermalconductivityandbehavior •LowerRDS(on)andpulsecurrentdependencyontemperature •Increasedavalanchecapability •Compatiblewithstandarddrivers(recommendeddrivingvoltage:18V) Drain Pin 2, Tab Gate Pin 1 Benefits •Uniquecombinationofhighperformance,highreliabilityandeaseofuse •Easeofuseandintegration •Suitablefortopologieswithcontinuoushardcommutation •Higherrobustnessandsystemreliability •Efficiencyimprovement •Reducedsystemsizeleadingtohigherpowerdensity *1: Internal body diode *1 Source Pin 3 Potentialapplications •SMPS •UPS(uninterruptablepowersupplies) •SolarPVinverters •EVcharginginfrastructure •Energystorageandbatteryformation •ClassDamplifiers Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS@TJ=25°C 650 V RDS(on),typ 27 mΩ QG,typ 62 nC ID,pulse 185 A Qoss@400V 147 nC Eoss@400V 22.2 µJ Type/OrderingCode Package IMW65R027M1H PG-TO 247-3 Final Data Sheet Marking 65R027M1 1 RelatedLinks see Appendix A Rev.2.0,2019-12-16 650VCoolSiCªM1SiCTrenchPowerDevice IMW65R027M1H TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Final Data Sheet 2 Rev.2.0,2019-12-16 650VCoolSiCªM1SiCTrenchPowerDevice IMW65R027M1H 1Maximumratings atTJ=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 47 39 A TC=25°C TC=100°C - 185 A TC=25°C - - 326 mJ ID=12.2A,VDD=50V,L=4.4mH; see table 10 EAR - - 1.63 mJ ID=12.2A,VDD=50V;seetable10 Avalanche current, single pulse IAS - - 12.2 A - MOSFETdv/dtruggedness dv/dt - - 200 V/ns VDS=0...400V Gate source voltage (recommended driving voltage) VGS 0 - 18 V AC(f>1Hz) Gate source voltage (dynamic) VGS -5 - 23 V tpulse,negative