IMW65R057M1H
MOSFET
650VCoolSiCªM1SiCTrenchPowerDevice
PG-TO247-3
The650VCoolSiC™isbuiltoverthesolidsiliconcarbidetechnology
developedinInfineoninmorethan20years.Leveragingthewidebandgap
SiCmaterialcharacteristics,the650VCoolSiC™MOSFEToffersaunique
combinationofperformance,reliabilityandeaseofuse.Suitableforhigh
temperatureandharshoperations,itenablesthesimplifiedandcost
effectivedeploymentofthehighestsystemefficiency.
Tab
1
2
3
Features
•Optimizedswitchingbehaviorathighercurrents
•CommutationrobustfastbodydiodewithlowQrr
•Superiorgateoxidereliability
•Tj,max=175°Candexcellentthermalbehavior
•LowerRDS(on)andpulsecurrentdependencyontemperature
•Increasedavalanchecapability
•Compatiblewithstandarddrivers(recommendeddrivingvoltage:18V)
Drain
Pin 2, Tab
Gate
Pin 1
Benefits
•Uniquecombinationofhighperformance,highreliabilityandeaseofuse
•Easeofuseandintegration
•Suitablefortopologieswithcontinuoushardcommutation
•Higherrobustnessandsystemreliability
•Efficiencyimprovement
•Reducedsystemsizeleadingtohigherpowerdensity
*1: Internal body diode
*1
Source
Pin 3
Potentialapplications
•SMPS
•UPS(uninterruptablepowersupplies)
•SolarPVinverters
•EVcharginginfrastructure
•Energystorageandbatteryformation
•ClassDamplifiers
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS@TJ=25°C
650
V
RDS(on),typ
57
mΩ
RDS(on),max
74
mΩ
QG,typ
28
nC
ID,pulse
85
A
Qoss@400V
65
nC
Eoss@400V
9.8
µJ
Type/OrderingCode
Package
IMW65R057M1H
PG-TO247-3
Final Data Sheet
Marking
65R057M1
1
RelatedLinks
see Appendix A
Rev.2.0,2021-03-17
650VCoolSiCªM1SiCTrenchPowerDevice
IMW65R057M1H
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Final Data Sheet
2
Rev.2.0,2021-03-17
650VCoolSiCªM1SiCTrenchPowerDevice
IMW65R057M1H
1Maximumratings
atTJ=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Values
Unit
Note/TestCondition
35
25
A
TC=25°C
TC=100°C
-
85
A
TC=25°C
-
-
142
mJ
ID=5.3A,VDD=50V,L=10.1mH;
see table 10
EAR
-
-
0.71
mJ
ID=5.3A,VDD=50V;seetable10
Avalanche current, single pulse
IAS
-
-
5.3
A
-
MOSFETdv/dtruggedness
dv/dt
-
-
200
V/ns
VDS=0...400V
Gate source voltage (static)
VGS
-2
-
20
V
static
Gate source voltage (recommended
driving voltage)
VGS
0
-
18
V
-
Gate source voltage (dynamic)
VGS
-5
-
23
V
tpulse,negative
