IMZ120R045M1XKSA1

IMZ120R045M1 IMZ120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Drain pin 1  Very low switching losses  Threshold-free on state characteristic  Wide gate-source voltage range  Benchmark gate threshold voltage, VGS(th) = 4.5V  0V turn-off gate voltage  Fully controllable dv/dt  Commutation robust body diode, ready for synchronous rectification  Easy to use/drive due to sense (driver) source pin for better control of the gate  Temperature independent turn-off switching losses Gate pin 4 Sense pin 3 Source pin 2 Benefits  Efficiency improvement  Enabling higher frequency  Increased power density  Cooling effort reduction  Reduction of system complexity and cost Potential applications  Energy generation o   Solar string inverter and solar optimizer Industrial power supplies o Industrial UPS o Industrial SMPS Infrastructure – Charge o Charger Product validation Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22 Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction Table 1 Key Performance and Package Parameters Type IMZ120R045M1 VDS 1200V Datasheet www.infineon.com ID RDS(on) (TC = 25°C, Rth(j-c,max)) (Tvj = 25°C, ID = 20A, VGS = 15V) 52A 45mΩ Tj,max Marking Package 175°C 120M1045 PG-TO247-4 Please read the Important Notice and Warnings at the end of this document page 1 of 17 2.6 2020-12-11 IMZ120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Table of contents 1200V SiC Trench MOSFET Table of contents Features ........................................................................................................................................ 1 Benefits ......................................................................................................................................... 1 Potential applications ..................................................................................................................... 1 Product validation .......................................................................................................................... 1 Table of contents ............................................................................................................................ 2 1 Maximum ratings ................................................................................................................... 3 2 Thermal resistances ............................................................................................................... 4 3 3.1 3.2 3.3 Electrical Characteristics ........................................................................................................ 5 Static characteristics ............................................................................................................................... 5 Dynamic characteristics .......................................................................................................................... 6 Switching characteristics ........................................................................................................................ 7 4 Electrical characteristic diagrams ............................................................................................ 8 5 Package drawing................................................................................................................... 14 6 Test conditions ..................................................................................................................... 15 Revision history............................................................................................................................. 16 Datasheet 2 of 17 2.6 2020-12-11 IMZ120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Maximum ratings 1 Maximum ratings For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet. Table 2 Maximum ratings Parameter Symbol Value Unit Drain-source voltage, Tvj ≥ 25°C VDSS 1200 V DC drain current for Rth(j-c,max), limited by Tvjmax, VGS = 15V, TC = 25°C TC = 100°C ID 52 36 A Pulsed drain current, tp limited by Tvjmax, VGS = 15V ID,pulse1 130 A DC body diode forward current for Rth(j-c,max), limited by Tvjmax, VGS = 0V TC = 25°C TC = 100°C ISD Pulsed body diode current, tp limited by Tvjmax ISD,pulse1 130 Gate-source voltage2 Max transient voltage, < 1% duty cycle Recommend turn-on gate voltage Recommend turn-off gate voltage VGSS VGSS,on VGSS,off -10… 20 15 0 Short-circuit withstand time VDD = 800V, VDS,peak < 1200V, VGS,on = 15V, Tj,start = 25°C tSC 3 Power dissipation, limited by Tvjmax TC = 25°C TC = 100°C Ptot 228 114 W Virtual junction temperature Tvj -55… 175 °C Storage temperature Tstg -55… 150 °C Soldering temperature, wavesoldering only allowed at leads, 1.6mm (0.063 in.) from case for 10 s Tsold 260 °C Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm 52 28 A A V µs verified by design Important note: The selection of positive and negative gate-source voltages impacts the long-term behavior of the device. The design guidelines described in Application Note AN2018-09 must be considered to ensure sound operation of the device over the planned lifetime. 1 2 Datasheet 3 of 17 2.6 2020-12-11 IMZ120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Thermal resistances 2 Thermal resistances Table 3 Parameter Symbol MOSFET/body diode thermal resistance, junction – case Rth(j-c) Thermal resistance, junction – ambient Rth(j-a) Datasheet Value Conditions leaded 4 of 17 Unit min. typ. max. - 0.51 0.66 K/W - - 62 K/W 2.6 2020-12-11 IMZ120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Electrical Characteristics 3 Electrical Characteristics 3.1 Static characteristics Table 4 Static characteristics (at Tvj = 25°C, unless otherwise specified) Parameter Symbol Conditions Value min. Drain-source on-state resistance RDS(on) Body diode forward voltage VSD Gate-source threshold voltage VGS(th) Zero gate voltage drain current IDSS Gate-source leakage current IGSS Transconductance Internal gate resistance Datasheet VGS = 15V, ID = 20A, Tvj = 25°C Tvj = 100°C Tvj = 175°C VGS = 0V, ISD = 20A Tvj = 25°C Tvj = 100°C Tvj = 175°C (tested after 1 ms pulse at VGS = 20V) ID = 10mA, VDS = VGS Tvj = 25°C Tvj =175°C Unit typ. max. mΩ - 45 55 75 59 V - 4.1 4.0 3.9 5.2 V 3.5 - 4.5 3.6 5.7 - VGS = 0V, VDS = 1200V Tvj=25°C Tvj=175°C - 2 4 200 - VGS = 20V, VDS = 0V - - 120 nA VGS = -10V, VDS = 0V - - -120 nA gfs VDS = 20V, ID = 20A - 11.1 - S RG,int f = 1MHz, VAC = 25mV - 4 - Ω 5 of 17 µA 2.6 2020-12-11 IMZ120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Electrical Characteristics 3.2 Dynamic characteristics Table 5 Dynamic characteristics (at Tvj = 25°C, unless otherwise specified) Parameter Symbol Input capacitance Ciss Output capacitance Coss Reverse capacitance Crss Coss stored energy Eoss Total gate charge QG Gate to source charge QGS,pl Gate to drain charge QGD Datasheet Value Conditions VDD = 800V, VGS = 0V, f = 1MHz, VAC = 25mV VDD = 800V, ID = 20A, VGS = 0/15V, turn-on pulse 6 of 17 min. typ. max. - 1900 - - 115 - - 13 - - - - 44 52 - 15 - - 13 - Unit pF µJ nC 2.6 2020-12-11 IMZ120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Electrical Characteristics 3.3 Switching characteristics Table 6 Switching characteristics, Inductive load 4 Parameter Symbol Conditions Value Unit min. typ. max. - 9 - - 18 - - 17 - - 13 - - 280 - - 70 - - 350 - VDD = 800V, ISD = 20A, VGS at diode = 0V, dif/dt = 1000A/µs, Qrr includes also QC , see Fig. C - 0.15 - - 8 - VDD = 800V, ID = 20A, VGS = 0/15V, RG,ext = 2Ω, Lσ = 40nH, diode: body diode at VGS = 0V see Fig. E - 9 - - 18 - - 20 - - 14 - - 300 - - 75 - - 375 - - 0.25 - - 10 - MOSFET Characteristics, Tvj = 25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Etot VDD = 800V, ID = 20A, VGS = 0/15V, RG,ext = 2Ω, Lσ = 40nH, diode: body diode at VGS = 0V see Fig. E ns µJ Body Diode Characteristics, Tvj = 25°C Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm µC A MOSFET Characteristics, Tvj = 175°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Etot ns µJ Body Diode Characteristics, Tvj = 175°C Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm VDD = 800V, ISD = 20A, VGS at diode = 0V, dif/dt = 1000A/µs, Qrr includes also QC , see Fig. C µC A The chip technology was characterized up to 200 kV/µs. The measured dV/dt was limited by measurement test setup and package. 4 Datasheet 7 of 17 2.6 2020-12-11 IMZ120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Electrical characteristic diagrams 4 Electrical characteristic diagrams Figure 1 Figure 2 Reverse bias safe operating area (RBSOA) (Vgs = 0/15V, Tc = 25°C, Tj < 175°C) Power dissipation as a function of case temperature limited by bond wire (Ptot = f(TC)) Figure 3 Maximum DC drain to source current as a Figure 4 function of case temperature limited by bond wire (IDS = f(TC)) Maximum source to drain current as a function of case temperature limited by bond wire (ISD = f(TC), VGS = 0V) Datasheet 8 of 17 2.6 2020-12-11 IMZ120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Electrical characteristic diagrams Figure 5 Typical transfer characteristic (IDS = f(VGS), VDS = 20V, tP = 20µs) Figure 6 Typical gate-source threshold voltage as a function of junction temperature (VGS(th) = f(Tvj), IDS = 10mA, VGS = VDS) Figure 7 Typical output characteristic, VGS as Figure 8 parameter (IDS = f(VDS), Tvj=25°C, tP = 20µs) Typical output characteristic, VGS as parameter (IDS = f(VDS), Tvj=175°C, tP = 20µs) Datasheet 9 of 17 2.6 2020-12-11 IMZ120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Electrical characteristic diagrams Figure 9 Typical on-resistance as a function of junction temperature (RDS(on) = f(Tvj), VGS=15V) Figure 10 Typical gate charge (VGS = f(QG), IDS = 20A, VDS = 800V, turn-on pulse) Figure 11 Typical capacitance as a function of drain-source voltage = f(VDS), VGS = 0V, f = 1MHz) Figure 12 Typical body diode forward voltage as function of junction temperature (VSD=f(Tvj), VGS=0V, ISD=20A) Datasheet (C 10 of 17 2.6 2020-12-11 IMZ120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Electrical characteristic diagrams Figure 13 Typical body diode forward current as function of forward voltage, VGS as parameter (ISD = f(VSD), Tvj = 25°C, tP = 20µs) Figure 15 Typical switching energy losses as a Figure 16 function of junction temperature (E = f(Tvj), VDD = 800V, VGS = 0V/15V, RG,ext = 2Ω, ID = 20A, ind. load, test circuit in Fig. E, diode: body diode) Datasheet Figure 14 11 of 17 Typical body diode forward current as function of forward voltage, VGS as parameter (ISD = f(VSD), Tvj = 175°C, tP = 20µs) Typical switching energy losses as a function of drain-source current (E = f(IDS), VDD = 800V, VGS = 0V/15V, RG,ext = 2Ω, Tvj = 175°C, ind. load, test circuit in Fig. E, diode: body diode) 2.6 2020-12-11 IMZ120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Electrical characteristic diagrams Figure 17 Typical switching energy losses as a Figure 18 function of gate resistance (E = f(RG,ext), VDD = 800V, VGS = 0V/15V, ID = 20A, Tvj = 175°C, ind. load, test circuit in Fig. E, diode: body diode) Typical switching times as a function of gate resistor (t = f(RG,ext), VDD = 800V, VGS = 0V/15V, ID = 20A, Tvj = 175°C, ind. load, test circuit in Fig. E, diode: body diode) Figure 19 Typical reverse recovery charge as a Figure 20 function of diode current slope (Qrr = f(dif/dt), VDD = 800V, ID = 20A, ind. load, test circuit in Fig.E) Typical reverse recovery current as a function of diode current slope (Irrm = f(dif/dt), VDD = 800V, ID = 20A, ind. load, test circuit in Fig.E) Datasheet 12 of 17 2.6 2020-12-11 IMZ120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Electrical characteristic diagrams Zthjc [K/W] 1.00 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse 0.10 i: ri: [K/W] τi: [s] 0.01 1E-6 Figure 21 Datasheet 1E-5 1E-4 1E-3 tp [s] 1 2.78E-01 1.78E-02 2 2.01E-01 2.98E-03 1E-2 3 1.58E-01 5.23E-04 1E-1 4 2.34E-02 1.52E-05 1E0 Max. transient thermal resistance (MOSFET/diode) (Zth(j-c,max) = f(tP), parameter D = tp/T, thermal equivalent circuit in Fig. D) 13 of 17 2.6 2020-12-11 IMZ120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Package drawing 5 Package drawing PG-TO247-4 Figure 22 Datasheet Package drawing 14 of 17 2.6 2020-12-11 IMZ120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Test conditions 6 Test conditions Figure 23 Test conditions Datasheet 15 of 17 2.6 2020-12-11 IMZ120R045M1 1200V SiC Trench MOSFET Revision history Revision history Major changes since the last revision Document version Date of release Description of changes 2.1 2018-03-01 Initial version 2.2 2018-05-30 Important footnote update in chapter 1 Change of conditions for switching dynamic characteristics in chapter 3.2 and 3.3 Additional figures for VGS=0V/15V in chapter 4 2.3 2019-04-18 Add Recommended gate voltage in charpter 1 Add SOA figure in chapter 4 Remove figures for VGS=-5V/15V in chapter 4 2.4 2019-12-10 Move the short circuit time from dynamic characteristics table 5 to maximum ratings table 2. Update the Figure 21 Zth curve. 2.5 2020-06-12 Correction of marking letters in table 1 2.6 2020-12-11 Correction of circuit symbol on page 1 Datasheet 16 of 17 2.6 2020-12-11 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Published by Infineon Technologies AG 81726 München, Germany owners. © Infineon Technologies AG 2020. All Rights Reserved. Important notice The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. 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