IMZA65R083M1HXKSA1

IMZA65R083M1H MOSFET 650VCoolSiCªM1SiCTrenchPowerDevice PG-TO247-4-3 The650VCoolSiC™isbuiltoverthesolidsiliconcarbidetechnology developedinInfineoninmorethan20years.Leveragingthewidebandgap SiCmaterialcharacteristics,the650VCoolSiC™MOSFEToffersaunique combinationofperformance,reliabilityandeaseofuse.Suitableforhigh temperatureandharshoperations,itenablesthesimplifiedandcost effectivedeploymentofthehighestsystemefficiency. Tab 1 23 4 Features •Optimizedswitchingbehaviorathighercurrents •CommutationrobustfastbodydiodewithlowQrr •Superiorgateoxidereliability •Tj,max=175°Candexcellentthermalbehavior •LowerRDS(on)andpulsecurrentdependencyontemperature •Increasedavalanchecapability •Compatiblewithstandarddrivers(recommendeddrivingvoltage:18V) •Kelvinsourceprovidesupto4timeslowerswitchinglosses Drain Pin 1, Tab *1 Gate Pin 4 Driver Source Pin 3 Benefits *1: Internal body diode Power Source Pin 2 •Uniquecombinationofhighperformance,highreliabilityandeaseofuse •Easeofuseandintegration •Suitablefortopologieswithcontinuoushardcommutation •Higherrobustnessandsystemreliability •Efficiencyimprovement •Reducedsystemsizeleadingtohigherpowerdensity Potentialapplications •SMPS •UPS(uninterruptablepowersupplies) •SolarPVinverters •EVcharginginfrastructure •Energystorageandbatteryformation •ClassDamplifiers Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Pleasenote:Thesourceanddriversourcepinsarenotexchangeable. Theirexchangemightleadtomalfunction. Table1KeyPerformanceParameters Parameter Value Unit VDS@TJ=25°C 650 V RDS(on),typ 83 mΩ RDS(on),max 111 mΩ QG,typ 19 nC ID,pulse 59 A Qoss@400V 44 nC Eoss@400V 6.6 µJ Type/OrderingCode Package IMZA65R083M1H PG-TO247-4-3 Final Data Sheet Marking 65R083M1 1 RelatedLinks see Appendix A Rev.2.0,2021-03-17 650VCoolSiCªM1SiCTrenchPowerDevice IMZA65R083M1H TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Final Data Sheet 2 Rev.2.0,2021-03-17 650VCoolSiCªM1SiCTrenchPowerDevice IMZA65R083M1H 1Maximumratings atTJ=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 26 18 A TC=25°C TC=100°C - 59 A TC=25°C - - 95 mJ ID=3.6A,VDD=50V,L=14.7mH; see table 10 EAR - - 0.48 mJ ID=3.6A,VDD=50V;seetable10 Avalanche current, single pulse IAS - - 3.6 A - MOSFETdv/dtruggedness dv/dt - - 200 V/ns VDS=0...400V Gate source voltage (static) VGS -2 - 20 V static Gate source voltage (recommended driving voltage) VGS 0 - 18 V - Gate source voltage (dynamic) VGS -5 - 23 V tpulse,negative