IPA028N08N3GXKSA1

IPA028N08N3 G OptiMOS(TM)3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters VDS 80 V RDS(on),max 2.8 mW ID 89 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 Type IPA028N08N3 G Package PG-TO-220-FP Marking 028N08N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C2) 89 T C=100 °C 62 Unit A Pulsed drain current3) I D,pulse T C=25 °C 352 Avalanche energy, single pulse4) E AS I D=89 A, R GS=25 W 1430 mJ Gate source voltage V GS ±20 V Power dissipation P tot 42 W Operating and storage temperature T j, T stg -55 ... 175 °C T C=25 °C IEC climatic category; DIN IEC 68-1 55/175/56 1) J-STD20 and JESD22 Current is limited by package; with an RthJC=0.5K/W in a standard TO-220 package the chip is able to carry 251A. 2) 3) 4) See figure 3 for more detailed information See figure 13 for more detailed information Rev. 2.1 page 1 2013-08-26 IPA028N08N3 G Parameter Values Symbol Conditions Unit min. typ. max. - - 3.6 Thermal characteristics Thermal resistance, junction - case R thJC K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 80 - - Gate threshold voltage V GS(th) V DS=V GS, I D=270 µA 2 2.8 3.5 Zero gate voltage drain current I DSS V DS=80 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=80 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=89 A - 2.4 2.8 mW V GS=6 V, I D=44 A - 2.8 4.2 - 2.7 - W 89 178 - S Gate resistance RG Transconductance g fs Rev. 2.1 |V DS|>2|I D|R DS(on)max, I D=89 A page 2 2013-08-26 IPA028N08N3 G Parameter Values Symbol Conditions Unit min. typ. max. - 10700 14200 pF - 2890 3840 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 100 - Turn-on delay time t d(on) - 30 - Rise time tr - 59 - Turn-off delay time t d(off) - 77 - Fall time tf - 26 - Gate to source charge Q gs - 50 - Gate to drain charge Q gd - 30 - Switching charge Q sw - 50 - Gate charge total Qg - 155 206 Gate plateau voltage V plateau - 4.6 - Output charge Q oss - 210 279 nC - - 89 A - - 356 - 0.9 1.2 V - 78 - ns - 181 - nC V GS=0 V, V DS=40 V, f =1 MHz V DD=40 V, V GS=10 V, I D=89 A, R G,ext=1.6 W ns Gate Charge Characteristics5) V DD=40 V, I D=89 A, V GS=0 to 10 V V DD=40 V, V GS=0 V nC V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 5) T C=25 °C V GS=0 V, I F=89 A, T j=25 °C V R=40 V, I F=I S, di F/dt =100 A/µs See figure 16 for gate charge parameter definition Rev. 2.1 page 3 2013-08-26 IPA028N08N3 G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 100 40 80 30 60 ID [A] Ptot [W] 50 20 40 10 20 0 0 0 50 100 150 200 0 50 100 TC [°C] 150 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 200 101 limited by on-state resistance 1 µs 10 µs 100 µs 102 0.5 1 ms 100 10 ms 0.2 ZthJC [K/W] 101 ID [A] DC 100 0.1 0.05 10-1 0.02 0.01 10-1 single pulse 10-2 10-2 10-1 100 101 102 10-4 10-3 10-2 10-1 100 101 tp [s] VDS [V] Rev. 2.1 10-5 page 4 2013-08-26 IPA028N08N3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 350 10 7V 10 V 6V 300 8 4.5 V 5V 5.5 V 5.5 V RDS(on) [mW] 250 ID [A] 200 150 5V 6 4 6V 100 7V 10 V 2 4.5 V 50 0 0 0 1 2 3 4 5 0 50 100 VDS [V] 150 200 250 300 350 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 300 240 250 200 200 160 gfs [S] ID [A] parameter: T j 150 100 80 175 °C 25 °C 50 40 0 0 0 2 4 6 8 VGS [V] Rev. 2.1 120 0 40 80 120 160 ID [A] page 5 2013-08-26 IPA028N08N3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=89 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 6 4 5 3 2700 µA 270 µA VGS(th) [V] RDS(on) [mW] 4 max 3 typ 2 2 1 1 0 0 -60 -20 20 60 100 140 180 -60 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 105 103 Ciss 104 175 °C, 98% Coss 102 25 °C IF [A] C [pF] 175 °C 103 25 °C, 98% Crss 101 102 101 100 0 20 40 60 80 VDS [V] Rev. 2.1 0 0.5 1 1.5 2 VSD [V] page 6 2013-08-26 IPA028N08N3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=89A pulsed parameter: T j(start) parameter: V DD 1000 12 40 V 10 20 V 150 °C 100 °C VGS [V] 8 IAV [A] 100 60 V 25 °C 10 6 4 2 1 0 1 10 100 1000 10000 0 50 tAV [µs] 100 150 200 Qgate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 90 V GS Qg 85 VBR(DSS) [V] 80 75 V gs(th) 70 65 Q g(th) Q sw Q gs 60 -60 -20 20 60 100 140 Q gate Q gd 180 Tj [°C] Rev. 2.1 page 7 2013-08-26 IPA028N08N3 G PG-TO-220-FP Rev. 2.1 page 8 2013-08-26 IPA028N08N3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.1 page 9 2013-08-26