IPA030N10NF2SXKSA1

IPA030N10NF2S MOSFET StrongIRFETTM2Power-Transistor PG-TO220FP Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation QualifiedaccordingtoJEDECStandard Drain Pin 2 Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 3.0 mΩ ID 83 A Qoss 131 nC QG 103 nC Gate Pin 1 Source Pin 3 Type/OrderingCode Package IPA030N10NF2S PG-TO220 FullPAK Final Data Sheet 1 Marking RelatedLinks 030N10NS - Rev.2.1,2022-06-14 StrongIRFETTM2Power-Transistor IPA030N10NF2S TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Final Data Sheet 2 Rev.2.1,2022-06-14 StrongIRFETTM2Power-Transistor IPA030N10NF2S 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 83 59 A VGS=10V,TC=25°C VGS=10V,TC=100°C - 332 A TA=25°C - - 598 mJ ID=72A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 41 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 175 °C - Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage Pulsed drain current2) 3) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case RthJC Values Min. Typ. Max. - - 3.7 °C/W - 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3.0 3.8 V VDS=VGS,ID=169µA - 0.1 10 1.0 100 µA VDS=100V,VGS=0V,Tj=25°C VDS=100V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance4) RDS(on) - 2.6 2.98 3.0 3.6 mΩ VGS=10V,ID=50A VGS=6V,ID=25A Gate resistance RG - 1.8 - Ω - Transconductance5) gfs 74 - - S |VDS|≥2|ID|RDS(on)max,ID=50A Min. Typ. Max. V(BR)DSS 100 - Gate threshold voltage VGS(th) 2.2 Zero gate voltage drain current IDSS Gate-source leakage current 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) See Diagram 3 for more detailed information 3) See Diagram 13 for more detailed information 4) RDS(on) is specified at a distance of 1.8 mm distance to the package body; mounting at a larger distance increases the overall package resistance of approximately 0.04 mOhm/mm per leg. 5) Defined by design. Not subject to production test. Final Data Sheet 3 Rev.2.1,2022-06-14 StrongIRFETTM2Power-Transistor IPA030N10NF2S Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Unit Note/TestCondition - pF VGS=0V,VDS=50V,f=1MHz 1100 - pF VGS=0V,VDS=50V,f=1MHz - 49 - pF VGS=0V,VDS=50V,f=1MHz td(on) - 20 - ns VDD=50V,VGS=10V,ID=50A, RG,ext=1.6Ω Rise time tr - 65 - ns VDD=50V,VGS=10V,ID=50A, RG,ext=1.6Ω Turn-off delay time td(off) - 47 - ns VDD=50V,VGS=10V,ID=50A, RG,ext=1.6Ω Fall time tf - 26 - ns VDD=50V,VGS=10V,ID=50A, RG,ext=1.6Ω Unit Note/TestCondition Min. Typ. Max. Ciss - 7300 Output capacitance Coss - Reverse transfer capacitance Crss Turn-on delay time Table6Gatechargecharacteristics1) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 32 - nC VDD=50V,ID=50A,VGS=0to10V Gate charge at threshold Qg(th) - 22 - nC VDD=50V,ID=50A,VGS=0to10V Gate to drain charge Qgd - 21 - nC VDD=50V,ID=50A,VGS=0to10V Switching charge Qsw - 31 - nC VDD=50V,ID=50A,VGS=0to10V Gate charge total Qg - 103 154 nC VDD=50V,ID=50A,VGS=0to10V Gate plateau voltage Vplateau - 4.4 - V VDD=50V,ID=50A,VGS=0to10V Output charge Qoss - 131 - nC VDS=50V,VGS=0V Unit Note/TestCondition 2) Table7Reversediode Parameter Symbol Diode continuous forward current Values Min. Typ. Max. IS - - 32 A TC=25°C Diode pulse current IS,pulse - - 332 A TC=25°C Diode forward voltage VSD - 0.81 1.2 V VGS=0V,IF=25A,Tj=25°C Reverse recovery time trr - 44 - ns VR=50V,IF=25A,diF/dt=500A/µs Reverse recovery charge Qrr - 327 - nC VR=50V,IF=25A,diF/dt=500A/µs 1) 2) See ″Gate charge waveforms″ for parameter definition Defined by design. Not subject to production test. Final Data Sheet 4 Rev.2.1,2022-06-14 StrongIRFETTM2Power-Transistor IPA030N10NF2S 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 100 40 80 30 60 ID[A] Ptot[W] 50 20 40 10 20 0 0 25 50 75 100 125 150 0 175 0 25 50 TC[°C] 75 100 125 Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 1 µs 10 µs 102 101 100 µs 100 101 single pulse 0.01 0.02 0.05 0.1 0.2 0.5 ZthJC[K/W] 1 ms 101 ID[A] 175 102 10 10 ms 100 100 10-1 DC 10-1 10-2 10-2 10-3 150 TC[°C] 10-1 100 101 102 103 10-3 10-6 10-5 10-4 VDS[V] 10-2 10-1 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 5 Rev.2.1,2022-06-14 StrongIRFETTM2Power-Transistor IPA030N10NF2S Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 350 8 10 V 8V 300 7 4.5 V 7V 5V 6 250 6V 5 ID[A] RDS(on)[mΩ] 200 150 5V 6V 3 7V 8V 100 10 V 2 50 0 4 1 4.5 V 0 1 2 3 4 0 5 0 25 50 75 VDS[V] 100 125 150 175 ID[A] ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.drain-sourceonresistance 350 8 7 300 6 250 5 ID[A] RDS(on)[mΩ] 200 150 100 175 °C 4 3 2 50 175 °C 25 °C 1 25 °C 0 0 1 2 3 4 5 6 7 VGS[V] 0 3 6 9 12 15 VGS[V] ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 0 RDS(on)=f(VGS),ID=50A;parameter:Tj 6 Rev.2.1,2022-06-14 StrongIRFETTM2Power-Transistor IPA030N10NF2S Diagram9:Normalizeddrain-sourceonresistance Diagram10:Typ.gatethresholdvoltage 2.0 4.0 3.5 3.0 1690 µA 2.5 1.2 VGS(th)[V] RDS(on)(normalizedto25°C) 1.6 0.8 2.0 169 µA 1.5 1.0 0.4 0.5 0.0 -75 -50 -25 0 25 50 75 0.0 -75 100 125 150 175 200 -50 -25 0 25 Tj[°C] 50 75 100 125 150 175 200 Tj[°C] RDS(on)=f(Tj),ID=50A,VGS=10V VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Typ.forwardcharacteristicsofreversediode 4 103 10 25 °C 175 °C Ciss 103 102 IF[A] C[pF] Coss 102 101 Crss 101 0 20 40 60 80 100 100 0.00 0.25 VDS[V] 0.75 1.00 1.25 1.50 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.50 IF=f(VSD);parameter:Tj 7 Rev.2.1,2022-06-14 StrongIRFETTM2Power-Transistor IPA030N10NF2S Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 20 V 50 V 80 V 8 6 100 °C 150 °C VGS[V] IAV[A] 25 °C 101 4 2 100 100 101 102 103 tAV[µs] 0 0 20 40 60 80 100 120 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj,start VGS=f(Qgate),ID=50Apulsed,Tj=25°C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 108 106 VBR(DSS)[V] 104 102 100 98 96 94 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 8 Rev.2.1,2022-06-14 StrongIRFETTM2Power-Transistor IPA030N10NF2S 5PackageOutlines PACKAGE - GROUP NUMBER: REVISION: 01 DIMENSIONS A A1 A2 b b1 b2 c D D1 E e H L L1 øP Q PG-TO220-3-U02 DATE: 02.02.2021 MILLIMETERS MIN. MAX. 4.50 4.90 2.34 2.85 3.43 2.42 0.61 0.94 0.76 1.45 0.95 1.52 0.33 0.63 15.67 16.15 8.66 9.83 9.63 10.75 2.54 29.85 29.00 13.75 12.78 2.83 3.67 3.05 3.45 3.50 3.20 Figure1OutlinePG-TO220FullPAK,dimensionsinmm Final Data Sheet 9 Rev.2.1,2022-06-14 StrongIRFETTM2Power-Transistor IPA030N10NF2S RevisionHistory IPA030N10NF2S Revision:2022-06-14,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2021-03-16 Release of final version 2.1 2022-06-14 Skip condition "Operating and storage tempt.", update trr, Qrr and Diagram 12 Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. 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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 10 Rev.2.1,2022-06-14