IPA045N10N3GXKSA1

IPA045N10N3G MOSFET OptiMOSTM3Power-Transistor,100V TO-220-FP Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchronousrectification •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 4.5 mΩ ID 64 A Drain Pin 2 Gate Pin 1 Source Pin 3 Type/OrderingCode Package Marking RelatedLinks IPA045N10N3 G PG-TO220-FP 045N10N - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.4,2016-01-22 OptiMOSTM3Power-Transistor,100V IPA045N10N3G TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Final Data Sheet 2 Rev.2.4,2016-01-22 OptiMOSTM3Power-Transistor,100V IPA045N10N3G 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 64 45 A TC=25°C1) TC=100°C - 256 A TC=25°C - - 540 mJ ID=64A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 39 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current1) ID,pulse - Avalanche energy, single pulse EAS Gate source voltage 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction-case Thermal resistance, juntion-ambient, Leaded Values Min. Typ. Max. RthJC - - 3.8 K/W - RthJA - - 80 K/W - Unit Note/TestCondition 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Min. Typ. Max. V(BR)DSS 100 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 2 2.7 3.5 V VDS=VGS,ID=150µA Zero gate voltage drain current IDSS - 0.1 10 1 100 µA VDS=100V,VGS=0V,Tj=25°C VDS=100V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 1 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 3.9 4.7 4.5 7.7 mΩ VGS=10V,ID=64A VGS=6V,ID=32A Gate resistance RG - 1.4 - Ω - Transconductance gfs 60 119 - S |VDS|>2|ID|RDS(on)max,ID=64A 1) See Diagram 3 Final Data Sheet 3 Rev.2.4,2016-01-22 OptiMOSTM3Power-Transistor,100V IPA045N10N3G Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Unit Note/TestCondition 8410 pF VGS=0V,VDS=50V,f=1MHz 1100 1460 pF VGS=0V,VDS=50V,f=1MHz - 41 - pF VGS=0V,VDS=50V,f=1MHz td(on) - 25 - ns VDD=50V,VGS=10V,ID=64A, RG,ext=1.6Ω Rise time tr - 47 - ns VDD=50V,VGS=10V,ID=64A, RG,ext=1.6Ω Turn-off delay time td(off) - 50 - ns VDD=50V,VGS=10V,ID=64A, RG,ext=1.6Ω Fall time tf - 15 - ns VDD=50V,VGS=10V,ID=64A, RG,ext=1.6Ω Unit Note/TestCondition Min. Typ. Max. Ciss - 6320 Output capacitance Coss - Reverse transfer capacitance Crss Turn-on delay time Table6Gatechargecharacteristics1) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 28 - nC VDD=50V,ID=64A,VGS=0to10V Gate to drain charge Qgd - 16 - nC VDD=50V,ID=64A,VGS=0to10V Switching charge Qsw - 25 - nC VDD=50V,ID=64A,VGS=0to10V Gate charge total Qg - 88 117 nC VDD=50V,ID=64A,VGS=0to10V Gate plateau voltage Vplateau - 4.4 - V VDD=50V,ID=64A,VGS=0to10V Output charge Qoss - 117 155 nC VDD=50V,VGS=0V Unit Note/TestCondition Table7Reversediode Parameter Symbol Diode continous forward current Values Min. Typ. Max. IS - - 64 A TC=25°C Diode pulse current IS,pulse - - 256 A TC=25°C Diode forward voltage VSD - 0.9 1 V VGS=0V,IF=64A,Tj=25°C Reverse recovery time trr - 69 - ns VR=50V,IF=64A,diF/dt=100A/µs Reverse recovery charge Qrr - 140 - nC VR=50V,IF=64A,diF/dt=100A/µs 1) See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.4,2016-01-22 OptiMOSTM3Power-Transistor,100V IPA045N10N3G 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 50 70 60 40 50 30 ID[A] Ptot[W] 40 30 20 20 10 10 0 0 50 100 150 0 200 0 50 100 TC[°C] 150 200 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 100 µs 10 µs 0.5 2 10 100 0.2 ZthJC[K/W] ID[A] 1 ms 1 10 10 ms 0.1 0.05 10-1 DC 0.02 100 0.01 single pulse 10-1 10-1 100 101 102 103 10-2 10-5 10-4 10-3 VDS[V] 10-1 100 101 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-2 ZthJC=f(tp);parameter:D=tp/T 5 Rev.2.4,2016-01-22 OptiMOSTM3Power-Transistor,100V IPA045N10N3G Diagram5:Typ.outputcharacteristics 250 Diagram6:Typ.drain-sourceonresistance 10 10 V 6V 7.5 V 5.5 V 200 8 4.5 V RDS(on)[mΩ] 150 ID[A] 5V 100 5V 6 6V 7.5 V 4 10 V 4.5 V 50 0 2 0 1 2 3 4 0 5 0 20 40 VDS[V] 60 ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 200 160 150 120 gfs[S] ID[A] 80 100 80 100 ID[A] 100 80 25 °C 50 40 175 °C 0 0 2 4 6 8 0 0 VGS[V] 40 60 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 20 gfs=f(ID);Tj=25°C 6 Rev.2.4,2016-01-22 OptiMOSTM3Power-Transistor,100V IPA045N10N3G Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 10 4.0 3.5 8 3.0 1500 µA 2.5 RDS(on)[mΩ] 6 150 µA VGS(th)[V] 98 % typ 4 2.0 1.5 1.0 2 0.5 0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 RDS(on)=f(Tj);ID=64A;VGS=10V VGS(th)=f(Tj);VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 10 180 Tj[°C] 103 Ciss 25 °C 175 °C 25 °C, 98% 175 °C, 98% Coss 102 IF[A] C[pF] 103 102 101 Crss 101 0 20 40 60 80 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 7 Rev.2.4,2016-01-22 OptiMOSTM3Power-Transistor,100V IPA045N10N3G Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 25 °C 8 100 °C 80 V VGS[V] IAS[A] 50 V 6 150 °C 101 20 V 4 2 100 100 101 102 103 0 0 20 tAV[µs] 40 60 80 100 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=64Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 110 VBR(DSS)[V] 105 100 95 90 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 8 Rev.2.4,2016-01-22 OptiMOSTM3Power-Transistor,100V IPA045N10N3G 5PackageOutlines Figure1OutlinePG-TO220-FP,dimensionsinmm/inches Final Data Sheet 9 Rev.2.4,2016-01-22 OptiMOSTM3Power-Transistor,100V IPA045N10N3G RevisionHistory IPA045N10N3 G Revision:2016-01-22,Rev.2.4 Previous Revision Revision Date Subjects (major changes since last revision) 2.4 2016-01-22 Insert RthJA TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. 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