IPA060N06NXKSA1

IPA060N06N MOSFET OptiMOSTMPower-Transistor,60V TO-220-FP Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 6.0 mΩ ID 45 A QOSS 32 nC QG(0V..10V) 27 nC Drain Pin 2 Gate Pin 1 Source Pin 3 Type/OrderingCode Package Marking RelatedLinks IPA060N06N PG-TO220-FP 060N06N - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.2,2016-08-10 OptiMOSTMPower-Transistor,60V IPA060N06N TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Final Data Sheet 2 Rev.2.2,2016-08-10 OptiMOSTMPower-Transistor,60V IPA060N06N 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 45 38 A VGS=10V,TC=25°C VGS=10V,TC=100°C - 180 A TC=25°C - - 60 mJ ID=45A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 33 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage Pulsed drain current1) 2) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - 3.4 4.6 K/W - Thermal resistance, junction - ambient, RthJA Leaded - - 80 K/W - Unit Note/TestCondition 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Min. Typ. Max. V(BR)DSS 60 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 2.1 2.8 3.3 V VDS=VGS,ID=36µA Zero gate voltage drain current IDSS - 0.1 10 1 100 µA VDS=60V,VGS=0V,Tj=25°C VDS=60V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 5.2 6.7 6.0 7.5 mΩ VGS=10V,ID=45A VGS=6V,ID=12A Gate resistance3) RG - 1.6 2.4 Ω - Transconductance gfs 36 73 - S |VDS|>2|ID|RDS(on)max,ID=45A 1) See Diagram 3 for more detailed information See Diagram 13 for more detailed information 3) Defined by design. Not subject to production test 2) Final Data Sheet 3 Rev.2.2,2016-08-10 OptiMOSTMPower-Transistor,60V IPA060N06N Table5Dynamiccharacteristics1) Parameter Symbol Input capacitance Values Unit Note/TestCondition 2500 pF VGS=0V,VDS=30V,f=1MHz 490 613 pF VGS=0V,VDS=30V,f=1MHz - 22 44 pF VGS=0V,VDS=30V,f=1MHz td(on) - 12 - ns VDD=30V,VGS=10V,ID=45A, RG,ext,ext=3Ω Rise time tr - 12 - ns VDD=30V,VGS=10V,ID=45A, RG,ext,ext=3Ω Turn-off delay time td(off) - 20 - ns VDD=30V,VGS=10V,ID=45A, RG,ext,ext=3Ω Fall time tf - 7 - ns VDD=30V,VGS=10V,ID=45A, RG,ext,ext=3Ω Unit Note/TestCondition Min. Typ. Max. Ciss - 2000 Output capacitance Coss - Reverse transfer capacitance Crss Turn-on delay time Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 9 - nC VDD=30V,ID=45A,VGS=0to10V Gate charge at threshold Qg(th) - 5 - nC VDD=30V,ID=45A,VGS=0to10V Gate to drain charge1) Qgd - 5 7 nC VDD=30V,ID=45A,VGS=0to10V Switching charge Qsw - 9 - nC VDD=30V,ID=45A,VGS=0to10V Gate charge total Qg - 27 32 nC VDD=30V,ID=45A,VGS=0to10V Gate plateau voltage Vplateau - 4.8 - V VDD=30V,ID=45A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 24 - nC VDS=0.1V,VGS=0to10V Output charge1) Qoss - 32 40 nC VDD=30V,VGS=0V Unit Note/TestCondition 1) Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Values Min. Typ. Max. IS - - 27 A TC=25°C IS,pulse - - 180 A TC=25°C VSD - 0.91 1.2 V VGS=0V,IF=27A,Tj=25°C Reverse recovery time trr - 32 51 ns VR=30V,IF=27A,diF/dt=100A/µs Reverse recovery charge Qrr - 28 - nC VR=30V,IF=27A,diF/dt=100A/µs Diode forward voltage 1) 1) 2) Defined by design. Not subject to production test See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.2,2016-08-10 OptiMOSTMPower-Transistor,60V IPA060N06N 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 40 50 40 30 ID[A] Ptot[W] 30 20 20 10 10 0 0 25 50 75 100 125 150 175 0 200 0 25 50 75 TC[°C] 100 125 150 Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 200 101 10 0.5 1 µs 102 10 µs 0.1 ZthJC[K/W] 101 0.2 100 100 µs ID[A] 175 TC[°C] 1 ms 10 ms 0.05 0.02 0.01 10-1 single pulse DC 100 10-1 10-1 100 101 102 10-2 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 5 Rev.2.2,2016-08-10 OptiMOSTMPower-Transistor,60V IPA060N06N Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 180 16 10 V 160 7V 140 14 6V 12 5V 120 5.5 V RDS(on)[mΩ] ID[A] 10 100 5.5 V 80 6V 8 7V 6 60 10 V 4 5V 40 2 20 0 0.0 0.5 1.0 1.5 0 2.0 0 20 40 60 80 VDS[V] 100 120 140 160 180 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 180 120 160 100 140 80 100 gfs[S] ID[A] 120 80 60 60 40 40 20 175 °C 20 0 25 °C 0 2 4 6 8 0 0 VGS[V] 40 60 80 100 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 20 gfs=f(ID);Tj=25°C 6 Rev.2.2,2016-08-10 OptiMOSTMPower-Transistor,60V IPA060N06N Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 12 5 11 10 4 9 8 max 3 6 VGS(th)[V] RDS(on)[mΩ] 7 typ 5 360 µA 36 µA 2 4 3 1 2 1 0 -60 -20 20 60 100 140 0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=45A;VGS=10V VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 175 °C 25°C max 175°C max Ciss 3 102 IF[A] C[pF] 10 Coss 102 101 Crss 101 0 20 40 60 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 7 Rev.2.2,2016-08-10 OptiMOSTMPower-Transistor,60V IPA060N06N Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 12 30 V 10 12 V 48 V 8 100 °C 101 VGS[V] IAV[A] 25 °C 150 °C 6 4 2 100 100 101 102 103 0 0 tAV[µs] 10 20 30 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=45Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 70 66 VBR(DSS)[V] 62 58 54 50 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 8 Rev.2.2,2016-08-10 OptiMOSTMPower-Transistor,60V IPA060N06N 5PackageOutlines Figure1OutlinePG-TO220-FP,dimensionsinmm/inches Final Data Sheet 9 Rev.2.2,2016-08-10 OptiMOSTMPower-Transistor,60V IPA060N06N RevisionHistory IPA060N06N Revision:2016-08-10,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2014-06-19 Rev.2.1 2.2 2016-08-10 Add Rthja parameter TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 10 Rev.2.2,2016-08-10