IPA086N10N3GXKSA1

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS™Power-Transistor,100V OptiMOS™3Power-Transistor IPA086N10N3G DataSheet Rev.2.4 Final PowerManagement&Multimarket IPA086N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) VDS 100 V RDS(on),max 8.6 mW ID 45 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 • Fully isolated package (2500 VAC; 1 minute) Type IPA086N10N3 G Package PG-TO220-FP Marking 086N10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C2) 45 T C=100 °C 32 Unit A Pulsed drain current2) I D,pulse T C=25 °C 180 Avalanche energy, single pulse E AS I D=45 A, R GS=25 W 170 mJ Gate source voltage V GS ±20 V Power dissipation P tot 37.5 W Operating and storage temperature T j, T stg -55 ... 175 °C T C=25 °C IEC climatic category; DIN IEC 68-1 1) 2) 55/175/56 J-STD20 and JESD22 See figure 3 Rev. 2.4 page 1 2015-08-26 IPA086N10N3 G Parameter Values Symbol Conditions Unit min. typ. max. - - 4 K/W 100 - - V Thermal characteristics Thermal resistance, junction - case R thJC Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=75 µA 2 2.7 3.5 Zero gate voltage drain current I DSS V DS=100 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=100 V, V GS=0 V, T j=125 °C - 10 100 µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=45 A - 7.5 8.6 mW V GS=6 V, I D=23 A - 9.2 15.4 - 1.4 - W 35 69 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=45 A 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.4 page 2 2015-08-26 IPA086N10N3 G Parameter Values Symbol Conditions Unit min. typ. max. - 2990 3980 - 523 696 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 21 - Turn-on delay time t d(on) - 16 - Rise time tr - 10 - Turn-off delay time t d(off) - 27 - Fall time tf - 8 - Gate to source charge Q gs - 14 - Gate to drain charge Q gd - 8 - Switching charge Q sw - 13 - Gate charge total Qg - 42 55 Gate plateau voltage V plateau - 4.6 - Output charge Q oss - 55 73 nC - - 45 A - - 180 - 0.9 1.2 V - 63 - ns - 120 - nC V GS=0 V, V DS=50 V, f =1 MHz V DD=50 V, V GS=10 V, I D=45 A, R G,ext=1.6 W pF ns Gate Charge Characteristics4) V DD=50 V, I D=45 A, V GS=0 to 10 V V DD=50 V, V GS=0 V nC V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 4) T C=25 °C V GS=0 V, I F=45 A, T j=25 °C V R=50 V, I F=45 A, di F/dt =100 A/µs See figure 16 for gate charge parameter definition Rev. 2.4 page 3 2015-08-26 IPA086N10N3 G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 50 40 35 40 30 30 ID [A] Ptot [W] 25 20 20 15 10 10 5 0 0 0 50 100 150 0 200 50 100 TC [°C] 150 200 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 101 limited by on-state resistance 1 µs 0.5 10 µs 102 ZthJC [K/W] ID [A] 0.2 100 100 µs 1 ms 101 DC 10 ms 0.1 0.05 0.02 10-1 0.01 100 single pulse 10-1 10-2 10-1 100 101 102 103 10-4 10-3 10-2 10-1 100 101 tp [s] VDS [V] Rev. 2.4 10-5 page 4 2015-08-26 IPA086N10N3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 16 120 10 V 4.5 V 100 7.5 V 12 5V ID [A] RDS(on) [mW] 5.5 V 80 5V 60 6V 7.5 V 8 10 V 40 4.5 V 4 20 0 0 0 1 2 0 3 20 VDS [V] 40 60 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 140 100 90 120 80 100 70 60 ID [A] gfs [S] 80 60 50 40 30 40 20 20 10 25 °C 175 °C 0 0 0 2 4 6 8 VGS [V] Rev. 2.4 0 20 40 60 80 ID [A] page 5 2015-08-26 IPA086N10N3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=45 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 20 4 18 3.5 16 3 750 µA 2.5 12 VGS(th) [V] RDS(on) [mW] 14 98 % 10 typ 8 75 µA 2 1.5 6 1 4 0.5 2 0 0 -60 -20 20 60 100 140 180 -60 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 103 Ciss 103 Coss 102 175 °C, 98% IF [A] C [pF] 25 °C 102 175 °C Crss 25 °C, 98% 101 101 100 0 20 40 60 80 VDS [V] Rev. 2.4 0 0.5 1 1.5 2 VSD [V] page 6 2015-08-26 IPA086N10N3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=45 A pulsed parameter: T j(start) parameter: V DD 100 10 80 V 8 50 V 25 °C 6 10 20 V VGS [V] IAS [A] 100 °C 150 °C 4 2 1 0 1 10 100 1000 0 10 tAV [µs] 20 30 40 50 Qgate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 110 V GS Qg VBR(DSS) [V] 105 100 V gs(th) 95 Q g(th) Q sw Q gs 90 -60 -20 20 60 100 140 Q gate Q gd 180 Tj [°C] Rev. 2.4 page 7 2015-08-26 IPA086N10N3 G PG-TO220-FP Rev. 2.4 page 8 2015-08-26 OptiMOS™3Power-Transistor IPA086N10N3G RevisionHistory IPA086N10N3 G Revision:2015-08-27,Rev.2.4 Previous Revision Revision Date Subjects (major changes since last revision) 2.4 2015-08-27 Update features: "Fully isolated package..." 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Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 10 Rev.2.4,2015-08-27