IPA320N20NM3SXKSA1

IPA320N20NM3S MOSFET OptiMOSTM3Power-Transistor,200V PG-TO220FP Features •Idealforhighfrequencyswitchingandsync.rec. •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100%avalanchetested •Pb-freeplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation QualifiedaccordingtoJEDECStandard Drain Pin 2 Table1KeyPerformanceParameters Parameter Value Unit VDS 200 V RDS(on),max 32 mΩ ID 26 A Qoss 54 nC QG(0V..10V) 22 nC Type/OrderingCode Package IPA320N20NM3S PG-TO 220 FullPAK Final Data Sheet Gate Pin 1 Source Pin 3 Marking 320N203S 1 RelatedLinks - Rev.2.1,2019-09-02 OptiMOSTM3Power-Transistor,200V IPA320N20NM3S TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Final Data Sheet 2 Rev.2.1,2019-09-02 OptiMOSTM3Power-Transistor,200V IPA320N20NM3S 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 26 19 A VGS=10V,TC=25°C VGS=10V,TC=100°C - 104 A TC=25°C - - 190 mJ ID=26A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 38 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage Pulsed drain current1) 2) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case RthJC Values Min. Typ. Max. - - 3.9 °C/W - 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3 4 V VDS=VGS,ID=89µA - 0.1 10 1 100 µA VDS=160V,VGS=0V,Tj=25°C VDS=160V,VGS=0V,Tj=125°C IGSS - 1 100 nA VGS=20V,VDS=0V RDS(on) - 27.2 32.0 mΩ VGS=10V,ID=26A Gate resistance RG - 2.5 - Ω - Transconductance gfs - 48 - S |VDS|≥2|ID|RDS(on)max,ID=26A Min. Typ. Max. V(BR)DSS 200 - Gate threshold voltage VGS(th) 2 Zero gate voltage drain current IDSS Gate-source leakage current Drain-source on-state resistance 3) 1) See Diagram 3 for more detailed information See Diagram 13 for more detailed information 3) Defined by design. Not subject to production test. 2) Final Data Sheet 3 Rev.2.1,2019-09-02 OptiMOSTM3Power-Transistor,200V IPA320N20NM3S Table5Dynamiccharacteristics Parameter Symbol Input capacitance1) Values Unit Note/TestCondition 2300 pF VGS=0V,VDS=100V,f=1MHz 140 - pF VGS=0V,VDS=100V,f=1MHz - 5 - pF VGS=0V,VDS=100V,f=1MHz td(on) - 11 - ns VDD=100V,VGS=10V,ID=13A, RG,ext=1.6Ω Rise time tr - 9 - ns VDD=100V,VGS=10V,ID=13A, RG,ext=1.6Ω Turn-off delay time td(off) - 21 - ns VDD=100V,VGS=10V,ID=13A, RG,ext=1.6Ω Fall time tf - 4 - ns VDD=100V,VGS=10V,ID=13A, RG,ext=1.6Ω Unit Note/TestCondition Min. Typ. Max. Ciss - 1800 Output capacitance Coss - Reverse transfer capacitance Crss Turn-on delay time Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 8 - nC VDD=100V,ID=13A,VGS=0to10V Gate charge at threshold Qg(th) - 5 - nC VDD=100V,ID=13A,VGS=0to10V Gate to drain charge Qgd - 3 - nC VDD=100V,ID=13A,VGS=0to10V Switching charge Qsw - 5 - nC VDD=100V,ID=13A,VGS=0to10V Gate charge total Qg - 22 30 nC VDD=100V,ID=13A,VGS=0to10V Gate plateau voltage Vplateau - 4.3 - V VDD=100V,ID=13A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 20 - nC VDS=0.1V,VGS=0to10V Output charge Qoss - 54 - nC VDD=100V,VGS=0V Unit Note/TestCondition 1) Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Diode forward voltage 1) Reverse recovery charge 1) 2) Values Min. Typ. Max. IS - - 26 A TC=25°C IS,pulse - - 104 A TC=25°C VSD - 0.94 1.2 V VGS=0V,IF=26A,Tj=25°C Qrr - 500 - nC VR=100V,IF=13A,diF/dt=100A/µs Defined by design. Not subject to production test. See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.1,2019-09-02 OptiMOSTM3Power-Transistor,200V IPA320N20NM3S 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 40 28 35 24 30 20 16 ID[A] Ptot[W] 25 20 12 15 8 10 4 5 0 0 25 50 75 100 125 150 175 0 200 0 25 50 75 TC[°C] 100 125 150 Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 200 101 10 102 single pulse 0.01 0.02 0.05 0.1 0.2 0.5 1 µs 10 µs 1 ms 100 µs 100 ZthJC[K/W] 101 ID[A] 175 TC[°C] 100 DC -1 10-1 10 ms 10 10-2 10-3 100 101 102 103 10-2 10-5 10-4 10-3 VDS[V] 10-1 100 101 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-2 ZthJC=f(tp);parameter:D=tp/T 5 Rev.2.1,2019-09-02 OptiMOSTM3Power-Transistor,200V IPA320N20NM3S Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 120 80 10 V 4.5 V 8V 100 5V 70 7V 60 6V 80 RDS(on)[mΩ] ID[A] 50 60 40 40 6V 7V 30 8V 5V 10 V 20 20 10 4.5 V 0 0 1 2 3 4 0 5 0 10 20 30 VDS[V] 40 50 60 ID[A] ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.drain-sourceonresistance 120 100 25 °C 100 80 175 °C 60 175 °C RDS(on)[mΩ] ID[A] 80 60 40 40 25 °C 20 20 0 0 1 2 3 4 5 6 7 VGS[V] 0 2 4 6 8 10 VGS[V] ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 0 RDS(on)=f(VGS),ID=26A;parameter:Tj 6 Rev.2.1,2019-09-02 OptiMOSTM3Power-Transistor,200V IPA320N20NM3S Diagram9:Normalizeddrain-sourceonresistance Diagram10:Typ.gatethresholdvoltage 3.0 4.0 3.5 2.5 2.0 2.5 VGS(th)[V] RDS(on)(normalizedto25°C) 3.0 1.5 2.0 890 µA 1.5 89 µA 1.0 1.0 0.5 0.5 0.0 -80 -40 0 40 80 120 160 0.0 -80 200 -40 0 40 Tj[°C] 80 120 160 200 Tj[°C] RDS(on)=f(Tj),ID=26A,VGS=10V VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 25 °C, max 175 °C 175 °C, max Ciss 103 102 Coss IF[A] C[pF] 102 101 101 Crss 100 0 25 50 75 100 125 150 175 200 100 0.00 0.25 VDS[V] 0.75 1.00 1.25 1.50 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.50 IF=f(VSD);parameter:Tj 7 Rev.2.1,2019-09-02 OptiMOSTM3Power-Transistor,200V IPA320N20NM3S Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 40 V 100 V 160 V 8 25 °C 101 IAV[A] VGS[V] 6 100 °C 4 150 °C 2 0 10 10-1 100 101 102 103 tAV[µs] 0 0 4 8 12 16 20 24 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj,start VGS=f(Qgate),ID=13Apulsed,Tj=25°C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 226 221 216 VBR(DSS)[V] 211 206 201 196 191 186 -80 -40 0 40 80 120 160 200 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 8 Rev.2.1,2019-09-02 OptiMOSTM3Power-Transistor,200V IPA320N20NM3S 5PackageOutlines 1 2 3 DIMENSIONS A A1 A2 b b1 b2 b3 b4 c D D1 E e H L L1 øP Q MILLIMETERS MIN. MAX. 4.50 4.90 2.34 2.80 2.42 2.86 0.65 0.90 0.95 1.38 1.20 1.50 0.65 1.38 1.20 1.50 0.40 0.63 15.67 16.15 8.97 9.83 10.00 10.65 2.54 28.70 29.75 12.78 13.75 3.45 2.83 3.00 3.38 3.50 3.15 DOCUMENT NO. Z8B00181328 REVISION 03 ISSUE DATE 23.07.2018 SCALE 5:1 0 1 2 3 4 5mm EUROPEAN PROJECTION Figure1OutlinePG-TO220FullPAK,dimensionsinmm/inches Final Data Sheet 9 Rev.2.1,2019-09-02 OptiMOSTM3Power-Transistor,200V IPA320N20NM3S RevisionHistory IPA320N20NM3S Revision:2019-09-02,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2019-07-18 Release of final version 2.1 2019-09-02 Update package outline Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. 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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 10 Rev.2.1,2019-09-02