IPA50R190CEXKSA2

IPA50R190CE MOSFET 500VCoolMOSªCEPowerTransistor PG-TO220FP CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™CEisa price-performanceoptimizedplatformenablingtotargetcostsensitive applicationsinConsumerandLightingmarketsbystillmeetinghighest efficiencystandards.Thenewseriesprovidesallbenefitsofafast switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand offeringthebestcostdownperformanceratioavailableonthemarket. Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforstandardgradeapplications Drain Pin 2 Gate Pin 1 Applications Source Pin 3 PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 550 V RDS(on),max 0.19 Ω ID 24.8 A Qg.typ 47.2 nC ID,pulse 63 A Eoss@400V 4.42 µJ Type/OrderingCode Package Marking IPA50R190CE PG-TO 220 FullPAK 5R190CE Final Data Sheet 1 RelatedLinks see Appendix A Rev.2.4,2016-07-12 500VCoolMOSªCEPowerTransistor IPA50R190CE TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.4,2016-07-12 500VCoolMOSªCEPowerTransistor IPA50R190CE 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 24.8 15.7 A TC = 25°C TC = 100°C - 63 A TC=25°C - - 339 mJ ID =7.7A; VDD = 50V EAR - - 0.51 mJ ID =7.7A; VDD = 50V Avalanche current, repetitive IAR - - 7.7 A - MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...400V Gate source voltage VGS -20 -30 - 20 30 V static; AC (f>1 Hz) Power dissipation (Full PAK) Ptot - - 32 W TC=25°C Operating and storage temperature Tj,Tstg -40 - 150 °C - Mounting torque - - - 50 Ncm M2.5 screws IS - - 8.1 A TC=25°C Diode pulse current IS,pulse - - 63.0 A TC = 25°C Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V,ISD