IPA60R099C7
MOSFET
600VCoolMOSªC7PowerDevice
PG-TO220FP
CoolMOS™C7isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.
600VCoolMOS™C7seriescombinestheexperienceoftheleadingSJ
MOSFETsupplierwithhighclassinnovation.
The600VC7isthefirsttechnologyeverwithRDS(on)*Abelow1Ohm*mm².
Features
•Suitableforhardandsoftswitching(PFCandhighperformanceLLC)
•IncreasedMOSFETdv/dtruggednessto120V/ns
•IncreasedefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg
•BestinclassRDS(on)/package
Drain
Pin 2
*1
Gate
Pin 1
Benefits
•IncreasedeconomiesofscalebyuseinPFCandPWMtopologiesinthe
application
•Higherdv/dtlimitenablesfasterswitchingleadingtohigherefficiency
•Enablinghighersystemefficiencybylowerswitchinglosses
•Increasedpowerdensitysolutionsduetosmallerpackages
•Suitableforapplicationssuchasserver,telecomandsolar
•Higherswitchingfrequenciespossiblewithoutlossinefficiencydueto
lowEossandQg
*1: Internal body diode
Source
Pin 3
Potentialapplications
PFCstagesandPWMstages(TTF,LLC)forhighpower/performance
SMPSe.g.Computing,Server,Telecom,UPSandSolar.
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
99
mΩ
Qg.typ
42
nC
ID,pulse
83
A
ID,continuous @ Tj1 Hz)
Power dissipation
Ptot
-
-
33
W
TC=25°C
Storage temperature
Tstg
-55
-
150
°C
-
Operating junction temperature
Tj
-55
-
150
°C
-
Mounting torque
-
-
-
50
Ncm M2.5 screws
IS
-
-
12
A
TC=25°C
Diode pulse current
IS,pulse
-
-
83
A
TC=25°C
Reverse diode dv/dt3)
dv/dt
-
-
20
V/ns
VDS=0...400V,ISD
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- 国内价格 香港价格
- 50+27.0437850+3.27756
- 150+26.91740150+3.26224
- 250+26.91681250+3.26217
- 750+26.91621750+3.26209
- 1250+26.915611250+3.26202