IPA60R165CPXKSA1

IPA60R165CP CoolMOS® Power Transistor Product Summary Features V 9H 6 IS%VJ^ h A[cQ_` RUSa^Q%[R%YQ^U` G A@^CP /.) R 9E"XW#%VJ^@T S4 *-i8 h JX`^M X[c SM`Q OTM^SQ G )'*/. ! Q P%\_Y ,2 W8 h ;d`^QYQ Pb'P` ^M`QP h >UST \QMW Oa^^QZ` OM\MNUXU`e h FaMXURUQP for industrial grade applications MOO[^PUZS `[ @;9;8)# h EN%R^QQ XQMP \XM`UZS3 G[>H O[Y\XUMZ`; Halogen free mold compound BM^P _cU`OTUZS HBEH `[\[X[SUQ_ Type Package =B6/)D*/.8B Bf$ [\QZ P^MUZ % )&1 % =M`Q ^Q_U_`MZOQ GQb& *&* $%&! "!# R< \MSQ * ! ! *()(%)*%*) $"#&!"#!$% IPA60R165CP Parameter Values Symbol Conditions Unit min. typ. max. & +))) & & *)) & & 1, & Dynamic characteristics ?Z\a` OM\MOU`MZOQ C R[[ Da`\a` OM\MOU`MZOQ C X[[ ;RRQO`UbQ [a`\a` OM\MOU`MZOQ$ QZQ^Se ZNUJ\NM/# C X"NZ# ;RRQO`UbQ [a`\a` OM\MOU`MZOQ$ `UYQ ZNUJ\NM0# C X"\Z# & ++) & Ia^Z%[Z PQXMe `UYQ t M"XW# & *+ & GU_Q `UYQ tZ & . & Ia^Z%[RR PQXMe `UYQ t M"XOO# & .) &