IPA60R1K5CE

IPA60R1K5CE MOSFET 600VCoolMOS™CEPowerTransistor TO-220FP CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™CEisa price-performanceoptimizedplatformenablingtotargetcostsensitive applicationsinConsumerandLightingmarketsbystillmeetinghighest efficiencystandards.Thenewseriesprovidesallbenefitsofafast switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand offeringthebestcostdownperformanceratioavailableonthemarket. Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforstandardgradeapplications Drain Pin 2, Tab Gate Pin 1 Applications Source Pin 3 PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 1500 mΩ Id. 5 A Qg.typ 9.4 nC ID,pulse 8 A Eoss@400V 1 µJ Type/OrderingCode Package IPA60R1K5CE PG-TO 220 FullPAK Final Data Sheet Marking 60S1K5CE 1 RelatedLinks see Appendix A Rev.2.0,2016-02-26 600VCoolMOS™CEPowerTransistor IPA60R1K5CE TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.0,2016-02-26 600VCoolMOS™CEPowerTransistor IPA60R1K5CE 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 5 3.2 A TC=25°C TC=100°C - 8 A TC=25°C - - 26 mJ ID=0.6A; VDD=50V; see table 11 EAR - - 0.09 mJ ID=0.6A; VDD=50V; see table 11 Avalanche current, repetitive IAR - - 0.6 A - MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...480V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation (FullPAK) TO-220FP Ptot - - 20 W TC=25°C Storage temperature Tstg -40 - 150 °C - Operating junction temperature Tj -40 - 150 °C - Mounting torque (FullPAK) TO-220FP - - - 50 Ncm M2.5 screws Continuous diode forward current IS - - 3.5 A TC=25°C Diode pulse current IS,pulse - - 8 A TC=25°C Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V,ISD