IPA60R280P6XKSA1

IPA60R280P6XKSA1

  • 厂商:

    EUPEC(英飞凌)

  • 封装:

    SOT78

  • 描述:

    MOSFET N-CH 600V TO220FP-3

  • 数据手册
  • 价格&库存
IPA60R280P6XKSA1 数据手册
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™P6 600VCoolMOS™P6PowerTransistor IPx60R280P6 DataSheet Rev.2.2 Final PowerManagement&Multimarket 600VCoolMOS™P6PowerTransistor IPW60R280P6,IPB60R280P6,IPP60R280P6, IPA60R280P6 1Description TO-247 CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. TheoffereddevicesprovideallbenefitsofafastswitchingSJMOSFET whilenotsacrificingeaseofuse.Extremelylowswitchingandconduction lossesmakeswitchingapplicationsevenmoreefficient,morecompact, lighterandcooler. D²PAK TO-220 tab tab 2 1 3 TO-220FP Features •IncreasedMOSFETdv/dtruggedness •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Applications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom andUPS. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 280 mΩ Qg.typ 26 nC ID,pulse 39 A Eoss@400V 3.5 µJ Body diode di/dt 500 A/µs Type/OrderingCode Package IPW60R280P6 PG-TO 247 IPB60R280P6 PG-TO 263 IPP60R280P6 PG-TO 220 IPA60R280P6 PG-TO 220 FullPAK Final Data Sheet Marking 6R280P6 2 RelatedLinks see Appendix A Rev.2.2,2015-07-10 600VCoolMOS™P6PowerTransistor IPW60R280P6,IPB60R280P6,IPP60R280P6, IPA60R280P6 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Final Data Sheet 3 Rev.2.2,2015-07-10 600VCoolMOS™P6PowerTransistor IPW60R280P6,IPB60R280P6,IPP60R280P6, IPA60R280P6 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 13.8 8.8 A TC=25°C TC=100°C - 39 A TC=25°C - - 285 mJ ID=2.4A; VDD=50V; see table 12 EAR - - 0.43 mJ ID=2.4A; VDD=50V; see table 12 Avalanche current, repetitive IAR - - 2.4 A - MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation (Non FullPAK) TO-220, TO-263, TO-247 Ptot - - 104 W TC=25°C Power dissipation (FullPAK) TO-220FP Ptot - - 32 W TC=25°C Storage temperature Tstg -55 - 150 °C - Operating junction temperature Tj -55 - 150 °C - Mounting torque (Non FullPAK) TO-220, TO-247 - - - 60 Ncm M3 and M3.5 screws Mounting torque (FullPAK) TO-220FP - - - 50 Ncm M2.5 screws Continuous diode forward current IS - - 12.0 A TC=25°C Diode pulse current IS,pulse - - 39 A TC=25°C Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V,ISD
IPA60R280P6XKSA1 价格&库存

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IPA60R280P6XKSA1
  •  国内价格
  • 2+19.15626
  • 10+18.58350
  • 20+17.65146
  • 100+16.41742
  • 500+14.93865

库存:352

IPA60R280P6XKSA1
    •  国内价格 香港价格
    • 500+7.85996500+0.98563
    • 1500+7.717911500+0.96782
    • 2000+7.670562000+0.96188
    • 5000+7.528515000+0.94407
    • 7500+7.386477500+0.92625

    库存:0

    IPA60R280P6XKSA1
    •  国内价格 香港价格
    • 1+23.500801+2.99310
    • 10+11.2234010+1.42940
    • 100+10.43280100+1.32880
    • 500+8.14500500+1.03740
    • 1000+7.079001000+0.90160
    • 2500+7.031102500+0.89550
    • 5000+6.875405000+0.87570

    库存:846

    IPA60R280P6XKSA1
    •  国内价格
    • 10+18.58350
    • 20+17.65146
    • 100+16.41742
    • 500+14.93865

    库存:352