IPD60R400CE,IPS60R400CE,IPA60R400CE
MOSFET
600VCoolMOSªCEPowerTransistor
DPAK
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
tab
1
IPAKSL
PG-TO220FP
tab
2
3
Features
Drain
Pin 2, Tab
Gate
Pin 1
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Source
Pin 3
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:Note1:ForMOSFETparallelingtheuseofferritebeadson
thegateorseparatetotempolesisgenerallyrecommended.
Note2:*6R400CEisFullPAKmarkingonly
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
400
mΩ
Id.
14.7
A
Qg.typ
32
nC
ID,pulse
30
A
Eoss@400V
2.8
µJ
Type/OrderingCode
Package
IPD60R400CE
PG-TO 252
IPS60R400CE
PG-TO 251
IPA60R400CE
PG-TO 220 FullPAK
Final Data Sheet
Marking
60S400CE / 6R400CE*
1
RelatedLinks
see Appendix A
Rev.2.2,2016-08-08
600VCoolMOSªCEPowerTransistor
IPD60R400CE,IPS60R400CE,IPA60R400CE
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Final Data Sheet
2
Rev.2.2,2016-08-08
600VCoolMOSªCEPowerTransistor
IPD60R400CE,IPS60R400CE,IPA60R400CE
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Values
Unit
Note/TestCondition
14.7
9.3
A
TC=25°C
TC=100°C
-
30
A
TC=25°C
-
-
210
mJ
ID=1.8A; VDD=50V; see table 11
EAR
-
-
0.32
mJ
ID=1.8A; VDD=50V; see table 11
Avalanche current, repetitive
IAR
-
-
1.8
A
-
MOSFET dv/dt ruggedness
dv/dt
-
-
50
V/ns
VDS=0...480V
Gate source voltage (static)
VGS
-20
-
20
V
static;
Gate source voltage (dynamic)
VGS
-30
-
30
V
AC (f>1 Hz)
Power dissipation (Non FullPAK)
TO-252, TO-251
Ptot
-
-
112
W
TC=25°C
Power dissipation (FullPAK)
TO-220FP
Ptot
-
-
31
W
TC=25°C
Storage temperature
Tstg
-40
-
150
°C
-
Operating junction temperature
Tj
-40
-
150
°C
-
Continuous diode forward current
IS
-
-
10.4
A
TC=25°C
Diode pulse current
IS,pulse
-
-
30
A
TC=25°C
Reverse diode dv/dt3)
dv/dt
-
-
15
V/ns
VDS=0...400V,ISD
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