IPA60R600E6XKSA1

MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™E6600V 600VCoolMOS™E6PowerTransistor IPx60R600E6 DataSheet Rev.2.4 Final PowerManagement&Multimarket 600V CoolMOS" E6 Power Transistor 1 IPD60R600E6, IPP60R600E6 IPA60R600E6 Description CoolMOS" is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS" E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. Features • • • • Extremely low losses due to very low FOM R dson*Qg and Eoss Very high commutation ruggedness Easy to use/drive, Pb-free plating, halogen free Fully qualified according to JEDEC for Industrial Applications drain pin 2 gate pin 1 Applications source pin 3 PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit VDS @ Tj,max 650 V R DS(on),max 0.6 ! Qg,typ 20.5 nC ID,pulse 19 A Eoss @ 400V 1.9 µJ Body diode d i/d t 500 A/µs Type / Ordering Code Package IPD60R600E6 PG-TO252 IPP60R600E6 PG-TO220 IPA60R600E6 PG-TO220 FullPAK Rev. 2.4 Marking Related Links IFX CoolMOS Webpage 6R600E6 Page 2 IFX Design tools 2020-05-20 600V CoolMOS" E6 Power Transistor IPx60R600E6 Table of Contents Table of Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 7 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 8 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Rev. 2.4 Page 3 2020-05-20 600V CoolMOS" E6 Power Transistor IPx60R600E6 Maximum ratings 2 Maximum ratings at Tj = 25 °C, unless otherwise specified. Table 2 Maximum ratings Parameter Symbol Continuous drain current 1) ID Values Min. Typ. Max. - - 7.3 Unit Note / Test Condition A TC= 25 °C 4.6 Pulsed drain current 2) TC= 100°C ID,pulse - - 19 A TC=25 °C Avalanche energy, single pulse EAS - - 133 mJ ID=1.3 A,VDD=50 V (see table 21) Avalanche energy, repetitive EAR - - 0.2 Avalanche current, repetitive IAR - - 1.3 A MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS =0...480 V Gate source voltage VGS -20 - 20 V static -30 ID=1.3 A,VDD=50 V 30 AC (f>1 Hz) Power dissipation for TO-220, TO-252 Ptot - - 63 W TC=25 °C Power dissipation for TO-220 FullPAK Ptot - - 28 W TC=25 °C Operating and storage temperature Tj,Tstg -55 - 150 °C - - 60 Ncm Mounting torque TO-220 Mounting torque TO-220 FullPAK 50 Continuous diode forward current Diode pulse current 2) Reverse diode dv/dt 3) M3 and M3.5 screws M2.5 screws IS - - 6.3 A TC=25 °C IS,pulse - - 19 A TC=25 °C dv/dt - - 15 V/ns VDS =0...400 V,ISD " I D, Tj=25 °C 500 A/µs (see table 22) dif/dt Maximum diode commutation speed3) 1) Limited by Tj,max. Maximum duty cycle D=0.75 2) Pulse width tp limited by Tj,max 3) Identical low side and high side switch with identical RG FinalData Sheet Rev. 2.4 4 Page 4 Rev. 2.0, 2.2, 2010-04-12 2014-12-10 2020-05-20 600V CoolMOS" E6 Power Transistor IPx60R600E6 Thermal characteristics 3 Thermal characteristics Table 3 Thermal characteristics TO-220 (IPP60R600E6) Parameter Symbol Values Unit Min. Typ. Max. Thermal resistance, junction - case RthJC - - 2.0 Thermal resistance, junction ambient RthJA - - 62 Soldering temperature, wavesoldering only allowed at leads Tsold - - 260 Table 4 °C/W leaded °C 1.6 mm (0.063 in.) from case for 10 s Unit Note / Test Condition Thermal characteristics TO-220FullPAK (IPA60R600E6) Parameter Symbol Values Min. Typ. Max. Thermal resistance, junction - case RthJC - - 4.5 Thermal resistance, junction ambient RthJA - - 80 Soldering temperature, wavesoldering only allowed at leads Tsold - - 260 Table 5 Note / Test Condition °C/W leaded °C 1.6 mm (0.063 in.) from case for 10 s Unit Note / Test Condition Thermal characteristics TO-252 (IPD60R600E6) Parameter Symbol Values Min. Typ. Max. Thermal resistance, junction - case RthJC - - 2.0 Thermal resistance, junction ambient - - 62 RthJA °C/W SMD version, device on PCB, minimal footprint 35 Soldering temperature, wave- & reflow soldering allowed Tsold - - SMD version, device on PCB, 6cm 2 cooling area1) 260 °C reflow MSL1 1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm 2 copper area (thickness 70µm) for drain connection. PCB is vertical without air stream cooling. FinalData Sheet Rev. 2.4 5 Page 5 Rev. 2.0, 2.2, 2010-04-12 2014-12-10 2020-05-20 600V CoolMOS" E6 Power Transistor IPx60R600E6 Electrical characteristics 4 Electrical characteristics Electrical characteristics, at Tj=25 °C, unless otherwise specified. Table 6 Static characteristics Parameter Symbol Values Unit Note / Test Condition V VGS=0 V, ID=0.25 mA Min. Typ. Max. Drain-source breakdown voltage V(BR)DSS 600 - - Gate threshold voltage VGS(th) 2.5 3 3.5 Zero gate voltage drain current IDSS - - 1 - 10 - - - 100 nA VGS=20 V, VDS =0 V - 0.54 0.60 ! VGS=10 V, ID=2.4 A, Tj=25 °C - 1.40 - - 10 - Gate-source leakage current IGSS Drain-source on-state resistance RDS(on) Gate resistance Table 7 RG VDS =VGS, ID=0.20mA µA VDS =600 V, VGS=0 V, Tj=25 °C VDS =600 V, VGS=0 V, Tj=150 °C VGS=10 V, ID=2.4A, Tj=150 °C f=1 MHz, open drain ! Dynamic characteristics Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition pF VGS=0 V, VDS=100 V, f=1 MHz Input capacitance Ciss - 440 - Output capacitance Coss - 30 - Effective output capacitance, energy related1) Co(er) - 21 - VGS=0 V, VDS=0...480 V Effective output capacitance, time related2) Co(tr) - 88 - ID=constant, VGS=0 V VDS=0...480V Turn-on delay time td(on) - 10 - Rise time tr - 8 - Turn-off delay time td(off) - 58 - ns VDD=400 V, VGS=13 V, ID=3 A, RG= 6.8 ! (see table 20) Fall time tf 11 1) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V (BR)DSS 2) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS FinalData Sheet Rev. 2.4 6 Page 6 Rev. 2.0, 2.2, 2010-04-12 2014-12-10 2020-05-20 600V CoolMOS" E6 Power Transistor IPx60R600E6 Electrical characteristics Table 8 Gate charge characteristics Parameter Symbol Values Min. Typ. Max. Gate to source charge Qgs - 2.5 - Gate to drain charge Qgd - 10.5 - Gate charge total Qg - 20.5 - Gate plateau voltage Vplateau - 5.4 - Table 9 Unit Note / Test Condition nC VDD=480 V, ID=3.0A, VGS=0 to 10 V V Reverse diode characteristics Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Diode forward voltage VSD - 0.9 - V VGS=0 V, IF=3.0A, Tj=25 °C Reverse recovery time trr - 250 - ns Reverse recovery charge Qrr - 2.1 - µC Peak reverse recovery current Irrm - 16 - A VR=400 V, IF=3.0A, diF/dt=100 A/µs (see table 22) FinalData Sheet Rev. 2.4 7 Page 7 Rev. 2.0, 2.2, 2010-04-12 2014-12-10 2020-05-20 600V CoolMOS" E6 Power Transistor IPx60R600E6 Electrical characteristics diagrams 5 Electrical characteristics diagrams Table 10 Power dissipation TO-220, TO-252 Power dissipation TO-220 FullPAK Ptot = f(TC) Ptot = f(TC) Table 11 Max. transient thermal impedance TO-220, TO-252 Max. transient thermal impedance TO-220 FullPAK Z(thJC)=f(tp); parameter: D=tp/T FinalData Sheet Rev. 2.4 Z(thJC)=f(tp); parameter: D=t p/T 8 Page 8 Rev. 2.0, 2.2, 2010-04-12 2014-12-10 2020-05-20 600V CoolMOS" E6 Power Transistor IPx60R600E6 Electrical characteristics diagrams Table 12 Safe operating area TC=25 °C TO-220, TO-252 Safe operating area TC=25 °C TO-220 FullPAK ID=f(VDS); TC=25 °C; D=0; parameter tp ID=f(VDS ); TC=25 °C; D=0; parameter tp Table 13 Safe operating area TC=80 °C TO-220, TO-252 Safe operating area TC=80 °C TO-220 FullPAK ID=f(VDS); TC=80 °C; D=0; parameter tp ID=f(VDS); TC=80 °C; D=0; parameter tp FinalData Sheet Rev. 2.4 9 Page 9 2.0, 2014-12-10 2010-04-12 Rev. 2.2, 2020-05-20 600V CoolMOS" E6 Power Transistor IPx60R600E6 Electrical characteristics diagrams Table 14 Typ. output characteristics TC=25 °C Typ. output characteristics Tj=125 °C ID=f(VDS); Tj=25 °C; parameter: VGS ID=f(VDS); Tj=125 °C; parameter: VGS Table 15 Typ. drain-source on-state resistance Drain-source on-state resistance RDS(on)=f(ID); Tj=125 °C; parameter: VGS RDS(on)=f(Tj); ID=2.4 A; VGS=10 V FinalData Sheet Rev. 2.4 10 Page 10 Rev. 2.0, 2.2, 2010-04-12 2014-12-10 2020-05-20 600V CoolMOS" E6 Power Transistor IPx60R600E6 Electrical characteristics diagrams Table 16 Typ. transfer characteristics Typ. gate charge ID=f(VGS); VDS=20V VGS=f(Qgate), ID=3.0A pulsed Table 17 Avalanche energy Drain-source breakdown voltage EAS=f(Tj); ID=1.3 A; VDD=50 V VBR(DSS)=f(Tj); ID=0.25 mA FinalData Sheet Rev. 2.4 11 Page 11 Rev. 2.0, 2.2, 2010-04-12 2014-12-10 2020-05-20 600V CoolMOS" E6 Power Transistor IPx60R600E6 Electrical characteristics diagrams Table 18 Typ. capacitances Typ. Coss stored energy C=f(VDS); VGS=0 V; f=1 MHz EOSS=f(VDS) Table 19 Forward characteristics of reverse diode IF=f(VSD); parameter: Tj FinalData Sheet Rev. 2.4 12 Page 12 Rev. 2.0, 2.2, 2010-04-12 2014-12-10 2020-05-20 600V CoolMOS" E6 Power Transistor IPx60R600E6 Test circuits 6 Test circuits Table 20 Switching times test circuit and waveform for inductive load Switching times test circuit for inductive load Switching time waveform VDS 90% V DS V GS 10% VGS td(on) td(off) tr ton Table 21 tf toff Unclamped inductive load test circuit and waveform Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VD V DS VDS VDS ID Table 22 Test circuit and waveform for diode characteristics Test circuit for diode characteristics Diode recovery waveform ID # /#) #/ $ $00 ( $ . " $ ) ! 00 ( ! . " ! ) $ 00 $. $) RG1 ) V DS %$! RG2 !. !) / #00 #/ $ --, '$! RG1 = RG2 FinalData Sheet Rev. 2.4 $ --, "--, --, .*+$$$&& 13 Page 13 Rev. 2.0, 2.2, 2010-04-12 2014-12-10 2020-05-20 600V CoolMOS" E6 Power Transistor IPx60R600E6 Package outlines 7 Package outlines Figure 1 Outlines TO-220, dimensions in mm/inches FinalData Sheet Rev. 2.4 14 Page 14 Rev. 2.0, 2.2, 2010-04-12 2014-12-10 2020-05-20 6**M =^^[FGKm E6 H^fTa LaP]bXbc^a IP(%!'"!!&% /45