IPA65R600E6

MO SF ET Metall Oxide Semiconductor Field Effect Transistor Cool MO S E6 650V CoolMOSTM E6 Power Transistor IPx65R600E6 Data Sheet Rev. 2.4 Final Po wer Ma nage ment & Multi mark et 650V CoolMOSTM E6 Power Transistor IPD65R600E6, IPP65R600E6 IPA65R600E6 Description 1 TM CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by TM Infineon Technologies. CoolMOS DE series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. Features  Extremely low losses due to very low FoM Rdson*Q g and Eoss    Very high commutation ruggedness Easy to use/drive, Pb-free plating, Halogen free mold compound Fully qualified according to JEDEC for Industrial Applications Applications PFC stages, hard switching PWM stages and resonant switching PWM stages e.g. PC Silverbox, Adapter, LCD & PDP TV, Lightning, Server, Telecom and UPS. Please note: For MOSFET paralleling the use o ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit VDS @Tj max 700 V RDS(on), max 0.6 Ω QG, typ 23 nC ID, pulse 18 A Eoss @ 400V 2 µJ Body diode di/dt 500 A/µs Type / Ordering Code IPD65R600E6 IPP65R600E6 IPA65R600E6 Rev. 2.4 Package PG-TO252 PG-TO220 PG-TO220 FullPAK Marking 65E6600 Page 2 Related links IFX CoolMOS Webpage IFX Design tools 2020-05-20 650V CoolMOSTM E6 Power Transistor IPD65R600E6, IPP65R600E6 IPA65R600E6 Table of Contents 1 Description .......................................................................................................................................... 2 2 Maximum ratings ................................................................................................................................ 4 3 Thermal characteristics ..................................................................................................................... 5 4 Electrical characteristics ................................................................................................................... 5 5 Electrical characteristics diagrams .................................................................................................. 8 6 Test circuits ...................................................................................................................................... 13 7 Package outlines .............................................................................................................................. 14 8 Revision History ............................................................................................................................... 17 Rev. 2.4 Page 3 2020-05-20 650V CoolMOSTM E6 Power Transistor IPD65R600E6, IPP65R600E6 IPA65R600E6 Maximum ratings 2 At Tj = 25 °C, unless otherwise specified. Table 2 Parameter Maximum ratings Symbol Values Min. Note/Test Condition – – Max. 7.3 – – 4.6 TC = 100°C ID, pulse – – 18 Averlanche energy, single pulse EAS – – 142 TC = 25°C ID = 1.3A; VDD = 50V; TC = 25°C (see Table 21) Averlanche energy, repetitive EAR – – 0.21 Avalanche current, repetitive IAR – – 1.3 A dv/dt – – 50 V/ns VDS=0…480 V -20 – 20 V static Continuous drain current Pulsed drain current 1) 2) MOSFET dv/dt ruggedness Gate source voltage ID VGS Typ. Unit A mJ ID=1.3 A, VDD=50V 30 -30 TC = 25°C AC (f >1 Hz) Power dissipation for Non FullPAK Ptot – – 63 W TC = 25°C Power dissipation for FullPAK Ptot – – 28 W TC = 25°C Operating and storage temperature Tj, Tstg -55 – 150 °C Mounting torque TO-220 – – 60 Ncm Mounting torque TO-220 FullPAK – – 50 IS – – 6.3 A TC = 25°C IS, pulsed – – 18 A TC = 25°C dv/dt – – 15 V/ns 500 A/µs VDS=0…480 V, ISD ≤ ID, TC = 125°C (see table 22) Continous diode forward current Diode pulse current 2) Reverse diode dv/dt 3) Maxumum diode commutation 3) speed 1) dif/dt M3 and M3.5 screws M2.5 Screws Limited by Tj, max. Maximum duty cycle D=0.75 2) Pulse width tp limited by Tj, max 3) Identical low side and high side switch with identical RG Rev. 2.4 Page 4 2020-05-20 650V CoolMOSTM E6 Power Transistor IPD65R600E6, IPP65R600E6 IPA65R600E6 Thermal characteristics 3 Table 3 Parameter Thermal characteristics TO-220 (IPP65R600E6) Symbol Values Min. Typ. Unit Max. 2.0 Thermal resistance, junction-case RthJC – – Thermal resistance, junctionambient RthJA – – 62 Tsold Soldering temperature, wavesoldering only allowed at leads – – 260 Table 4 Parameter Thermal characteristics TO-220 FullPAK (IPA65R600E6) Symbol Values Min. Typ. Max. 4.5 Thermal resistance, junction-case RthJC – – Thermal resistance, junctionambient RthJA – – 80 Tsold Soldering temperature, wavesoldering only allowed at leads – – 260 Table 5 Parameter Thermal characteristics TO-252 (IPD65R600E6) Symbol Values Min. Thermal resistance, junction-case Thermal resistance, junction-ambient Typ. RthJC – – RthJA – – °C/W leaded °C Unit 62 1) Tsold – – Note/Test Condition leaded °C 1.6mm (0.063 in.) from case for 10 s Note/Test Condition °C/W SMD version, device on PCB, minimal footprint 35 Soldering temperature, wave- &reflowsoldering only allowed 1.6mm (0.063 in.) from case for 10 s °C/W Unit Max. 2.0 Note/Test Condition SMD version, device on 2 1) PCB, 6cm cooling area 260 °C Reflow MSL1 Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm 2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without air stream cooling. Rev. 2.4 Page 5 2020-05-20 650V CoolMOSTM E6 Power Transistor IPD65R600E6, IPP65R600E6 IPA65R600E6 Electrical characteristics 4 Electrical characteristics, at Tj=25°C, unless otherwise specified Table 6 Parameter Static characteristics Symbol Drain-source Breakdown voltage Gate threshold voltage Values Unit V(BR)DSS Min. 650 Typ. – – VGS(th) 2.5 3 3.5 – – 1 V µA IDSS – 10 – Gate- source leakage current IGSS – – 100 nA – 0.54 0.6 Ω Drain- source on- state resistance RDS(on) – 1.40 – Gate resistance RG – 10.5 – Dynamic characteristics Symbol Ω Values Min. VGS= 0V, ID= 1.0mA VDS= VGS, ID= 0.21mA Zero gate Voltage drain current Table7 Parameter Note/Test Condition Max. Unit VDS=600 V, VGS=0V, Tj=25°C VDS=600 V, VGS=0V, Tj=150°C VGS= 20V, VDS= 0V VGS= 10V, ID=2.1A, Tj= 25°C VGS= 10V, ID=2.1A, Tj= 150°C f= 1MHz, open drain Note/Test Condition Typ. 440 – 30 – – 21 – VGS= 0V, VDS=0…480V Co(tr) – 88 – Turn- on delay time td(on) – 10 – ID= const VGS= 0V, VDS=0…480 V Rise time tr – 8 – Turn- off delay time td(off) – 64 – tf – 11 – Input capacitance Ciss Output capacitance Coss – – Effective output capacitance, 1) energy related Co(er) Effective output capacitance, 2) time related Fall time Max. pF ns VGS= 0V, VDS= 100V, f= 1MHz VDD=400 V VGS=13 V, ID=3.2A, RG= 6.8 Ω (see table 20) 1) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS 2) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS Rev. 2.4 Page 6 2020-05-20 650V CoolMOSTM E6 Power Transistor IPD65R600E6, IPP65R600E6 IPA65R600E6 Table 8 Parameter Gate charge characteristics Symbol Values Min. Typ. 2.75 – 12 – Gate to drain charge QGD – – Gate charge, total QG – 23 Gate plateau voltage Vplateau – 5.5 Gate to source charge Table 8 Parameter QGS Reverse diode characteristics Symbol Unit Max. nC – VDD= 480V, ID= 3.2A, VGS=0 to 10 V V Values Min. Note/Test Condition Unit Note/Test Condition Diode forward voltage VSD – Typ. 0.9 – V VGS=0V, IF=3.2A, Tj=25°C Reverse recovery time trr – 270 – ns Reverse recovery charge Qrr – 2.0 – nC Peak reverse recovery current Irrm – 13 – A VR=400 V, IF=3.2A, diF/dt=100 A/µs (see table 22) Rev. 2.4 Page 7 Max. 2020-05-20 650V CoolMOSTM E6 Power Transistor IPD65R600E6, IPP65R600E6 IPA65R600E6 5 Electrical characteristics diagrams Table 10 Power dissipation Non FullPAK Power dissipation FULLPAK Ptot = f(TC) Ptot = f(TC) Table 11 Max. transient thermal impedance Non FullPAK Max. transient thermal impedance Non FullPAK Z(thJC)=f(tp); parameter: D=tp/T Z(thJC)=f(tp); parameter: D=tp/T Rev. 2.4 Page 8 2020-05-20 650V CoolMOSTM E6 Power Transistor IPD65R600E6, IPP65R600E6 IPA65R600E6 Table 12 Safe operating area TC=25°C Non FullPAK Safe operating area TC=25°C FullPAK ID=f(VDS); TC=25°C; VGS > 7V; D=0; parameter tp ID=f(VDS); TC=25°C; VGS > 7V; D=0; parameter tp Table 13 Safe operating area TC=80°C Non FullPAK Safe operating area TC=80°C FullPAK ID=f(VDS); TC=80°C; VGS > 7V; D=0; parameter tp ID=f(VDS); TC=80°C; VGS > 7V; D=0; parameter tp Rev. 2.4 Page 9 2020-05-20 650V CoolMOSTM E6 Power Transistor IPD65R600E6, IPP65R600E6 IPA65R600E6 Table 14 Typ. output characteristics TC=25°C Typ. output characteristics TC=125°C ID=f(VDS); Tj=25°C; parameter: VGS ID=f(VDS); Tj=125°C; parameter: VGS Table 15 Typ. drain-source on-state resistance Drain-source on-state resistance RDS(on)=f(ID); Tj=125 °C; parameter: VGS RDS(on)= f(Tj); ID=4.9A; VGS=10V Rev. 2.4 Page 10 2020-05-20 650V CoolMOSTM E6 Power Transistor IPD65R600E6, IPP65R600E6 IPA65R600E6 Table 16 Typ. transfer characteristics Typ. gate charge ID=f(VGS); VDS=20V VGS=f(Qgate), ID=4.9 A pulsed Table 17 Avalanche energy Drain-source breakdown voltage EAS=f(Tj); ID=1.8 A; VDD=50 V VBR(DSS)=f(Tj); ID=1.0 mA Rev. 2.4 Page 11 2020-05-20 650V CoolMOSTM E6 Power Transistor IPD65R600E6, IPP65R600E6 IPA65R600E6 Table 18 Typ. capacitances Typ. COSS stored energy C=f(VDS); VGS= 0 V; f=1 MHz EOSS=f(VDS) Table 19 Forward characteristics of reverse diode IF= ƒ(VSD); parameter: Tj Rev. 2.4 Page 12 2020-05-20 650V CoolMOSTM E6 Power Transistor IPD65R600E6, IPP65R600E6 IPA65R600E6 6 Table 20 Test circuits Switching times test circuit and waveform for inductive load Switching times test circuit for inductive load Switching time waveform VDS 90% VDS VGS VGS 10% td(on) tf td(off) ton tr toff Table 21 Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VD VDS VDS ID Table 22 Test circuit for diode characteristics Rev. 2.4 Diode recovery waveform Page 13 2020-05-20 650V CoolMOSTM E6 Power Transistor IPD65R600E6, IPP65R600E6 IPA65R600E6 7 Package outlines DIMENSION A A1 b b2 b3 c c2 D D1 E E1 e e1 N H L L3 L4 MILLIMETERS MAX. MIN. 2.41 2.16 0.15 0.00 0.89 0.64 1.15 0.65 5.50 4,95 0.61 0.46 0.98 0.40 5.97 6.22 5.02 5.84 6.35 6.73 4.32 5.50 2.29 4.57 3 9.40 10.48 1.18 1.78 0.89 1.27 0.51 1.02 DOCUMENT NO. Z8B00003328 REVISION 07 SCALE: 10:1 0 1 2mm EUROPEAN PROJECTION ISSUE DATE 01.04.2020 Figure 1 Outlines TO-252, dimensions in mm Rev. 2.4 Page 14 2020-05-20 650V CoolMOSTM E6 Power Transistor IPD65R600E6, IPP65R600E6 IPA65R600E6 Figure 2 Outlines TO220, dimensions in mm/inches Rev. 2.4 Page 15 2020-05-20 650V CoolMOSTM E6 Power Transistor IPD65R600E6, IPP65R600E6 IPA65R600E6 1 2 3 DIMENSIONS A A1 A2 b b1 b2 b3 b4 c D D1 E e H L L1 øP Q MILLIMETERS MIN. MAX. 4.50 4.90 2.34 2.85 2.86 2.42 0.65 0.90 0.95 1.38 1.51 0.95 0.65 1.38 0.65 1.51 0.40 0.63 16.15 15.67 8.97 9.83 10.00 10.65 2.54 29.75 28.70 12.78 13.75 2.83 3.45 3.00 3.30 3.50 3.15 DOCUMENT NO. Z8B00003319 REVISION 07 SCALE 5:1 0 1 2 3 4 5mm EUROPEAN PROJECTION ISSUE DATE 27.01.2017 Figure 3 Outlines TO220 FullPAK, dimensions in mm Rev. 2.4 Page 16 2020-05-20 650VCoolMOSªE6PowerTransistor IPx65R600E6 RevisionHistory IPx65R600E6 Revision:2020-05-20,Rev.2.4 Previous Revision Revision Date Subjects (major changes since last revision) 2.2 2016-08-04 Revised TO220 Full PAK package drawing on page 16 2.3 2018-03-04 Outline PG-TO-220 FullPAK update 2.4 2020-05-20 Update of the package outlines TO-252 Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2020InfineonTechnologiesAG AllRightsReserved. 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Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 17 Rev.2.4,2020-05-20