IPA80R1K0CE

MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™CE 800VCoolMOS™CEPowerTransistor IPA80R1K0CE DataSheet Rev.2.1 Final PowerManagement&Multimarket 800VCoolMOS™CEPowerTransistor IPA80R1K0CE 1Description TO-220FP CoolMOS™CEisarevolutionarytechnologyforhighvoltagepower MOSFETs.Thehighvoltagecapabilitycombinessafetywithperformance andruggednesstoallowstabledesignsathighestefficiencylevel. CoolMOS™800VCEcomeswithselectedpackagechoiceofferingthe benefitofreducedsystemcostsandhigherpowerdensitydesigns. Features •Highvoltagetechnology •Extremedv/dtrated •Highpeakcurrentcapability •Lowgatecharge •Loweffectivecapacitances •Pb-freeplating,RoHSCompliant,Halogenfreemoldcompound •Qualifiedforconsumergradeapplications Drain Pin 2, Tab Gate Pin 1 Applications LEDLightingforretrofitapplicationsinQRFlybacktopology Source Pin 3 Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj=25°C 800 V RDS(on),max 950 mΩ Qg.typ 31 nC ID,pulse 18 A Eoss@400V 2.4 µJ Body diode di/dt 400 A/µs Type/OrderingCode Package Marking IPA80R1K0CE PG-TO 220 FullPAK 8R1K0CE Final Data Sheet 2 RelatedLinks see Appendix A Rev.2.1,2015-06-23 800VCoolMOS™CEPowerTransistor IPA80R1K0CE TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Final Data Sheet 3 Rev.2.1,2015-06-23 800VCoolMOS™CEPowerTransistor IPA80R1K0CE 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 5.7 3.6 A TC = 25°C TC = 100°C - 18 A TC=25°C - - 230 mJ ID=1.6A; VDD=50V; see table 10 EAR - - 0.20 mJ ID=1.6A; VDD=50V; see table 10 Avalanche current, repetitive IAR - - 1.60 A - MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...640V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 32 W TC=25°C Storage temperature Tstg -40 - 150 °C - Operating junction temperature Tj -40 - 150 °C - Mounting torque - - - 50 Ncm M2.5 screws Continuous diode forward current IS - - 5.7 A TC=25°C Diode pulse current2) IS,pulse - - 18 A TC=25°C Reverse diode dv/dt3) dv/dt - - 4 V/ns VDS=0...400V,ISD