IPA90R340C3XKSA2

IPA90R340C3 CoolMOS™ Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS(on),max @ T J = 25°C 0.34 Ω 94 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant PG-TO220 FP • Worldwide best R DS,on in TO220 Fullpak • Ultra low gate charge CoolMOS™ 900V is designed for: • Quasi Resonant Flyback / Forward topologies • PC Silverbox and consumer applications • Industrial SMPS Type Package Marking IPA90R340C3 PG-TO220 FP 9R340C Maximum ratings, at T J=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current 2) ID Value T C=25 °C 15 T C=100 °C 9.5 Pulsed drain current3) I D,pulse T C=25 °C 34 Avalanche energy, single pulse E AS I D=3.1 A, V DD=50 V 678 Avalanche energy, repetitive t AR3),4) E AR I D=3.1 A, V DD=50 V 1 Avalanche current, repetitive t AR3),4) I AR MOSFET dv /dt ruggedness dv /dt Gate source voltage V GS Power dissipation P tot Operating and storage temperature T J, T stg Mounting torque Rev. 1.0 Unit A mJ 3.1 A V DS=0...400 V 50 V/ns static ±20 V AC (f>1 Hz) ±30 T C=25 °C 35 W -55 ... 150 °C M2.5 screws page 1 50 Ncm 2008-07-29 IPA90R340C3 Maximum ratings, at T J=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous diode forward current 2) IS Diode pulse current 3) I S,pulse Reverse diode dv /dt 5) dv /dt Parameter Symbol Conditions Value Unit 9.2 T C=25 °C A 34 4 V/ns Values Unit min. typ. max. - - 3.6 Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA leaded - - 62 Soldering temperature, wavesoldering only allowed at leads T sold 1.6 mm (0.063 in.) from case for 10 s - - 260 °C 900 - - V 2.5 3 3.5 K/W Electrical characteristics, at T J=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA Gate threshold voltage V GS(th) V DS=V GS, I D=1 mA Zero gate voltage drain current I DSS V DS=900 V, V GS=0 V, T j=25 °C - - 2 V DS=900 V, V GS=0 V, T j=150 °C - 20 - µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=9.2 A, T j=25 °C - 0.28 0.34 Ω V GS=10 V, I D=9.2 A, T j=150 °C - 0.76 - f =1 MHz, open drain - 1.3 - Gate resistance Rev. 1.0 RG page 2 Ω 2008-07-29 IPA90R340C3 Parameter Values Symbol Conditions Unit min. typ. max. - 2400 - - 120 - - 71 - Dynamic characteristics Input capacitance C iss Output capacitance C oss Effective output capacitance, energy related 6) C o(er) Effective output capacitance, time related 7) C o(tr) - 280 - Turn-on delay time t d(on) - 70 - Rise time tr - 20 - Turn-off delay time t d(off) - 400 - Fall time tf - 25 - Gate to source charge Q gs - 11 - Gate to drain charge Q gd - 41 - Gate charge total Qg - 94 tbd Gate plateau voltage V plateau - 4.6 - V - 0.8 1.2 V - 510 - ns - 11 - µC - 41 - A V GS=0 V, V DS=100 V, f =1 MHz pF V GS=0 V, V DS=0 V to 500 V V DD=400 V, V GS=10 V, I D=9.2A, R G=23.1 Ω ns Gate Charge Characteristics V DD=400 V, I D=9.2 A, V GS=0 to 10 V nC Reverse Diode Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Peak reverse recovery current I rrm V GS=0 V, I F=9.2 A, T j=25 °C V R=400 V, I F=I S, di F/dt =100 A/µs 1) J-STD20 and JESD22 2) Limited only by maximum temperature 3) Pulse width t p limited by T J,max 4) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 5) ISD≤ ID, di/dt≤200 A/µs, VDClink=400V, Vpeak