IPA95R310PFD7XKSA1

IPA95R310PFD7 MOSFET 950VCoolMOSªPFD7SJPowerDevice PG-TO220FP Thelatest950VCoolMOS™PFD7seriessetsanewbenchmarkinthe superjunction(SJ)technologies.Thistechnologyisdesignedtoaddress LightingandIndustrialSMPSapplicationsbycombiningbest-in-class performancewithstate-of-the-arteaseofuse.Comparedtothe CoolMOS™P7families,thePFD7offersanintegratedultra-fastbody diodeenablingusageinresonanttopologieswithmarketslowestreverse recoverycharge(Qrr). Features •Integratedultra-fastbodydiode •Best-in-classreverserecoverychargeQrr •Best-in-classFOMRDS(on)*Eoss,reducedQg,Ciss,andCoss •Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V •Integratedfastbodydiode •Best-in-classCoolMOS™qualityandreliability •Fullyoptimizedportfolio •Best-in-classRDS(on)inTHDandSMDpackages •ESDprotectionmin.Class2(HBM) Drain Pin 2 *1 Gate Pin 1 *1: Internal body diode Source Pin 3 Benefits •Excellenthardcommutationrobustnessenablingusageinresonant topologies •Extrasafetymarginfordesignswithincreasedbusvoltage •Enablingincreasedpowerdensitysolutions •ImprovedfullloadefficiencyinindustrialSMPSapplications •PricecompetitivenessoverpreviousCoolMOS™families •ImprovedproductionyieldbyreducingESDrelatedfailures Potentialapplications •Suitableforhard&softswitchingtopologies •OptimizedforusageinLLCandZVStopologies •PFC&LLCapplicationsinLightingandIndustrialSMPS Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj = 25 °C 950 V RDS(on),max 310 mΩ Qg,typ 61 nC ID 8.7 A Eoss @ 500V 4.2 µJ Body diode diF/dt 1300 A/µs Qoss @ 500V 0.14 µC Type/OrderingCode Package IPA95R310PFD7 PG-TO220 FullPAK Final Data Sheet 1 Marking RelatedLinks 95R310D7 see Appendix A Rev.2.1,2022-04-22 950VCoolMOSªPFD7SJPowerDevice IPA95R310PFD7 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Final Data Sheet 2 Rev.2.1,2022-04-22 950VCoolMOSªPFD7SJPowerDevice IPA95R310PFD7 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 8.7 5.6 A TC=25°C TC=100°C - 62 A TC=25°C - - 42 mJ ID=2.1A; VDD=50V; see table 10 EAR - - 0.32 mJ ID=2.1A; VDD=50V; see table 10 Avalanche current, single pulse IAS - - 2.1 A - MOSFET dv/dt ruggedness dv/dt - - 120 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 31 W TC=25°C Storage temperature Tstg -55 - 150 °C - Operating junction temperature Tj -55 - 150 °C - Mounting torque - - - 50 Ncm M2.5 screws IS - - 6 A TC=25°C Diode pulse current IS,pulse - - 62 A TC=25°C Reverse diode dv/dt3) dv/dt - - 70 V/ns VDS=0...400V,ISD