IPAN60R360PFD7SXKSA1

IPAN60R360PFD7S MOSFET 600VCoolMOSªPFD7SJPowerDevice PG-TO220FP CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. ThelatestCoolMOS™PFD7isanoptimizedplatformtailoredtotarget costsensitiveapplicationsinconsumermarketssuchascharger,adapter, motordrive,lighting,etc. ThenewseriesprovidesallthebenefitsofafastswitchingSuperjunction MOSFET,combinedwithanexcellentprice/performanceratioandstateof theartease-of-uselevel.Thetechnologymeetshighestefficiency standardsandsupportshighpowerdensity,enablingcustomersgoing towardsveryslimdesigns. Drain Pin 2 Features •ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss •LowswitchinglossesEoss,excellentthermalbehavior •Fastbodydiode •WiderangeportfolioofRDS(on)andpackagevariations •Integratedzenerdiode *1 Gate Pin 1 *2 *1: Internal body diode *2: Integrated ESD diode Source Pin 3 Benefits •Enableshighpowerdensitydesignsandsmallformfactors •Enablesefficiencygainsathigherswitchingfrequencies •Excellentcommutationruggedness •Easytoselectrightpartsandoptimizethedesign •HighESDruggedness Potentialapplications RecommendedforZVStopologiesusedinhighdensitychargers, adapters,lightingandmotordrivesapplications,etc. Productvalidation QualifiedaccordingtoJEDECStandard Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 360 mΩ Qg,typ 12.7 nC ID,pulse 24 A Eoss @ 400V 1.6 µJ Body diode diF/dt 1300 A/µs ESD Class (HBM) 2 - Type/OrderingCode Package IPAN60R360PFD7S PG-TO 220 FullPAK Narrow Lead Final Data Sheet Marking 60S360D7 1 RelatedLinks see Appendix A Rev.2.1,2019-11-29 600VCoolMOSªPFD7SJPowerDevice IPAN60R360PFD7S TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Final Data Sheet 2 Rev.2.1,2019-11-29 600VCoolMOSªPFD7SJPowerDevice IPAN60R360PFD7S 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 10 6 A TC=25°C TC=100°C - 24 A TC=25°C - - 29 mJ ID=2.1A; VDD=50V; see table 10 EAR - - 0.14 mJ ID=2.1A; VDD=50V; see table 10 Avalanche current, single pulse IAS - - 2.1 A - MOSFET dv/dt ruggedness dv/dt - - 120 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 23 W TC=25°C Storage temperature Tstg -40 - 150 °C - Operating junction temperature Tj -40 - 150 °C - - - - 50 Ncm M2.5 screws IS - - 10 A TC=25°C Diode pulse current IS,pulse - - 24 A TC=25°C Reverse diode dv/dt3) dv/dt - - 70 V/ns VDS=0...400V,ISD