IPAN70R360P7S
MOSFET
700VCoolMOSªP7PowerTransistor
PG-TO220FP
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.
ThelatestCoolMOS™P7isanoptimizedplatformtailoredtotargetcost
sensitiveapplicationsinconsumermarketssuchascharger,adapter,
lighting,TV,etc.
ThenewseriesprovidesallthebenefitsofafastswitchingSuperjunction
MOSFET,combinedwithanexcellentprice/performanceratioandstateof
theartease-of-uselevel.Thetechnologymeetshighestefficiency
standardsandsupportshighpowerdensity,enablingcustomersgoing
towardsveryslimdesigns.
Drain
Pin 2, Tab
Features
•ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss
•Excellentthermalbehavior
•IntegratedESDprotectiondiode
•Lowswitchinglosses(Eoss)
•Productvalidationacc.JEDECStandard
Gate
Pin 1
Source
Pin 3
Benefits
•Costcompetitivetechnology
•Lowertemperature
•HighESDruggedness
•Enablesefficiencygainsathigherswitchingfrequencies
•Enableshighpowerdensitydesignsandsmallformfactors
Potentialapplications
RecommendedforFlybacktopologiesforexampleusedinChargers,
Adapters,LightingApplications,etc.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseperatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj=25°C
700
V
RDS(on),max
0.36
Ω
Qg,typ
16.4
nC
ID,pulse
34
A
Eoss @ 400V
1.8
µJ
V(GS)th,typ
3
V
ESD class (HBM)
2
Type/OrderingCode
Package
IPAN70R360P7S
PG-TO 220 FullPAK Narrow Lead
Final Data Sheet
Marking
70S360P7
1
RelatedLinks
see Appendix A
Rev.2.1,2018-02-13
700VCoolMOSªP7PowerTransistor
IPAN70R360P7S
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.2.1,2018-02-13
700VCoolMOSªP7PowerTransistor
IPAN70R360P7S
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Values
Unit
Note/TestCondition
12.5
7.5
A
TC = 20°C
TC = 100°C
-
34.0
A
TC=25°C
-
-
4.5
A
measured with standard leakage
inductance of transformer of 10µH
dv/dt
-
-
100
V/ns
VDS=0...400V
Gate source voltage
VGS
-16
-30
-
16
30
V
static;
AC (f>1 Hz)
Power dissipation
Ptot
-
-
26.5
W
TC=25°C
Operating and storage temperature
Tj,Tstg
-40
-
150
°C
-
Continuous diode forward current
IS
-
-
5.7
A
TC=25°C
IS,pulse
-
-
34.0
A
TC = 25°C
dv/dt
-
-
1
V/ns
VDS=0...400V,ISD
