IPB009N03LGATMA1

IPB009N03LG MOSFET OptiMOSª3Power-Transistor,30V D²-PAK7pin Features •MOSFETforORingandUninterruptiblePowerSupply •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel •Logiclevel •Ultra-lowon-resistanceRDS(on) •100%Avalanchetested •Pb-freeplating;RoHScompliant tab 1 7 Table1KeyPerformanceParameters Parameter Value Unit VDS 30 V RDS(on),max 0.95 mΩ ID 180 A Drain Pin 4, tab Gate Pin 1 Source Pin 2,3,5,6,7 Type/OrderingCode Package Marking RelatedLinks IPB009N03L G PG-TO263-7 009N03L - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.0,2016-04-21 OptiMOSª3Power-Transistor,30V IPB009N03LG TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.0,2016-04-21 OptiMOSª3Power-Transistor,30V IPB009N03LG 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 180 180 180 180 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TC=25°C VGS=4.5V,TC=100°C - 1260 A TC=25°C - - 100 A TC=25°C EAS - - 610 mJ ID=100A,RGS=25Ω Reversediodedv/dt dv/dt - - 6 kV/µs ID=180A,VDS=24V,di/dt=200A/µs, Tj,max=175°C Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 250 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche current, single pulse IAS Avalanche energy, single pulse Continuous drain current Pulsed drain current1) 2) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - - 0.6 K/W - SMD version, device on PCB, minimal footprint RthJA - - 62 K/W - SMD version, device on PCB, 6 cm² cooling area3) RthJA - - 40 K/W - 1) See Diagram 3 for more detailed information See Diagram 13 for more detailed information 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) Final Data Sheet 3 Rev.2.0,2016-04-21 OptiMOSª3Power-Transistor,30V IPB009N03LG 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA - 2.2 V VDS=VGS,ID=250µA - 0.1 20 2 200 µA VDS=30V,VGS=0V,Tj=25°C VDS=30V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 0.95 0.7 1.3 0.95 mΩ VGS=4.5V,ID=100A VGS=10V,ID=100A Gate resistance RG - 1.5 - Ω - Transconductance gfs 180 370 - S |VDS|>2|ID|RDS(on)max,ID=100A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 30 - Gate threshold voltage VGS(th) 1 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 19000 25000 pF VGS=0V,VDS=15V,f=1MHz Output capacitance Coss - 5700 7600 pF VGS=0V,VDS=15V,f=1MHz Reverse transfer capacitance Crss - 360 - pF VGS=0V,VDS=15V,f=1MHz Turn-on delay time td(on) - 26 - ns VDD=15V,VGS=10V,ID=100A, RG,ext=1.6Ω Rise time tr - 14 - ns VDD=15V,VGS=10V,ID=100A, RG,ext=1.6Ω Turn-off delay time td(off) - 103 - ns VDD=15V,VGS=10V,ID=100A, RG,ext=1.6Ω Fall time tf - 22 - ns VDD=15V,VGS=10V,ID=100A, RG,ext=1.6Ω Unit Note/TestCondition Table6Gatechargecharacteristics1) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 50 - nC VDD=15V,ID=100A,VGS=0to4.5V Gate charge at threshold Qg(th) - 28 - nC VDD=15V,ID=100A,VGS=0to4.5V Gate to drain charge Qgd - 24 - nC VDD=15V,ID=100A,VGS=0to4.5V Switching charge Qsw - 46 - nC VDD=15V,ID=100A,VGS=0to4.5V Gate charge total Qg - 110 146 nC VDD=15V,ID=100A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.9 - V VDD=15V,ID=100A,VGS=0to4.5V Gate charge total Qg - 227 - nC VDD=15V,ID=100A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 95 - nC VDS=0.1V,VGS=0to4.5V Output charge Qoss - 148 - nC VDD=15V,VGS=0V 1) See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.0,2016-04-21 OptiMOSª3Power-Transistor,30V IPB009N03LG Table7Reversediode Parameter Symbol Diode continuous forward current Values Unit Note/TestCondition 180 A TC=25°C - 1260 A TC=25°C - 0.82 1 V VGS=0V,IF=100A,Tj=25°C - 135 - nC VR=15V,IF=IS,diF/dt=400A/µs Min. Typ. Max. IS - - Diode pulse current IS,pulse - Diode forward voltage VSD Reverse recovery charge Qrr Final Data Sheet 5 Rev.2.0,2016-04-21 OptiMOSª3Power-Transistor,30V IPB009N03LG 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 300 200 250 160 200 ID[A] Ptot[W] 120 150 80 100 40 50 0 0 50 100 150 0 200 0 50 100 TC[°C] 150 200 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 4 100 10 0.5 1 µs 103 10 µs 10-1 0.2 102 0.1 ZthJC[K/W] ID[A] 100 µs DC 1 ms 0.05 0.02 10 0.01 10 ms 101 100 10-1 -2 single pulse 100 101 102 10-3 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.0,2016-04-21 OptiMOSª3Power-Transistor,30V IPB009N03LG Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 1000 2.0 5V 10 V 800 3.2 V 1.6 4.5 V 3.5 V 4V ID[A] RDS(on)[mΩ] 600 400 3.5 V 1.2 4V 4.5 V 5V 0.8 6V 10 V 3.2 V 200 0.4 3V 2.8 V 0 0 1 2 0.0 3 0 40 80 VDS[V] 120 160 200 160 200 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 500 800 400 600 300 ID[A] gfs[S] 1000 400 200 200 100 175 °C 25 °C 0 0 1 2 3 4 5 0 0 VGS[V] 80 120 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 40 gfs=f(ID);Tj=25°C 7 Rev.2.0,2016-04-21 OptiMOSª3Power-Transistor,30V IPB009N03LG Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 1.80 2.5 1.60 2.0 1.40 1.5 98 % 1.00 0.80 VGS(th)[V] RDS(on)[mΩ] 1.20 typ 1.0 0.60 0.40 0.5 0.20 0.00 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=100A;VGS=10V VGS(th)=f(Tj);VGS=VDS;ID=1mA Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 5 104 10 25 °C 175 °C 25 °C, 98% 175 °C, 98% 103 Ciss 104 IF[A] C[pF] Coss 102 103 101 Crss 102 0 10 20 30 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 8 Rev.2.0,2016-04-21 OptiMOSª3Power-Transistor,30V IPB009N03LG Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 3 10 12 15 V 6V 10 24 V 102 8 150 °C IAV[A] VGS[V] 100 °C 25 °C 101 6 4 2 100 100 101 102 103 0 0 50 tAV[µs] 100 150 200 250 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=100Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 34 33 VBR(DSS)[V] 32 31 30 29 28 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.0,2016-04-21 OptiMOSª3Power-Transistor,30V IPB009N03LG 5PackageOutlines Figure1OutlinePG-TO263-7,dimensionsinmm/inches Final Data Sheet 10 Rev.2.0,2016-04-21 OptiMOSª3Power-Transistor,30V IPB009N03LG RevisionHistory IPB009N03L G Revision:2016-04-21,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2016-04-21 Release of final version TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. 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Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.0,2016-04-21