IPB032N10N5
MOSFET
OptiMOSª5Power-Transistor,100V
D²-PAK7pin
Features
•Idealforhighfrequencyswitchingandsync.rec.
•ExcellentgatechargexRDS(on)product(FOM)
•Verylowon-resistanceRDS(on)
•N-channel,normallevel
•100%avalanchetested
•Pb-freeplating;RoHScompliant
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Halogen-freeaccordingtoIEC61249-2-21
tab
1
7
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
100
V
RDS(on),max
3.2
mΩ
ID
166
A
Qoss
98
nC
QG(0V..10V)
76
nC
Type/OrderingCode
Package
IPB032N10N5
PG-TO263-7
1)
Drain
Pin 4, tab
Gate
Pin 1
Source
Pin 2,3,5,6,7
Marking
032N10N5
RelatedLinks
-
J-STD20 and JESD22
Final Data Sheet
1
Rev.2.0,2016-12-12
OptiMOSª5Power-Transistor,100V
IPB032N10N5
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.2.0,2016-12-12
OptiMOSª5Power-Transistor,100V
IPB032N10N5
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current
Values
Unit
Note/TestCondition
166
118
A
TC=25°C
TC=100°C
-
664
A
TC=25°C
-
-
233
mJ
ID=100A,RGS=25Ω
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
187
W
TC=25°C
Operating and storage temperature
Tj,Tstg
-55
-
175
°C
IEC climatic category;
DIN IEC 68-1: 55/175/56
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
Pulsed drain current1)
ID,pulse
-
Avalanche energy, single pulse
EAS
Gate source voltage
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case
Values
Min.
Typ.
Max.
RthJC
-
0.5
0.8
K/W
-
Thermal resistance, junction - ambient,
RthJA
minimal footprint
-
-
62
K/W
-
Thermal resistance, junction - ambient,
RthJA
6 cm2 cooling area2)
-
-
40
K/W
-
Soldering temperature and
reflow soldering is allowed
-
-
260
°C
reflow MSL1
Tsold
1)
see Diagram 3
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
2)
Final Data Sheet
3
Rev.2.0,2016-12-12
OptiMOSª5Power-Transistor,100V
IPB032N10N5
3Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
3.0
3.8
V
VDS=VGS,ID=125µA
-
0.1
10
1
100
µA
VDS=100V,VGS=0V,Tj=25°C
VDS=100V,VGS=0V,Tj=125°C
IGSS
-
1
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
2.8
3.4
3.2
4.2
mΩ
VGS=10V,ID=83A
VGS=6V,ID=42A
Gate resistance1)
RG
-
1.3
2
Ω
-
Transconductance
gfs
84
168
-
S
|VDS|>2|ID|RDS(on)max,ID=83A
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
100
-
Gate threshold voltage
VGS(th)
2.2
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics1)
Parameter
Symbol
Input capacitance
Values
Min.
Typ.
Max.
Ciss
-
5360
6970
pF
VGS=0V,VDS=50V,f=1MHz
Output capacitance
Coss
-
829
1078
pF
VGS=0V,VDS=50V,f=1MHz
Reverse transfer capacitance
Crss
-
37
65
pF
VGS=0V,VDS=50V,f=1MHz
Turn-on delay time
td(on)
-
16.2
-
ns
VDD=50V,VGS=10V,ID=83A,
RG,ext=1.6Ω
Rise time
tr
-
9.7
-
ns
VDD=50V,VGS=10V,ID=83A,
RG,ext=1.6Ω
Turn-off delay time
td(off)
-
35
-
ns
VDD=50V,VGS=10V,ID=83A,
RG,ext=1.6Ω
Fall time
tf
-
9.8
-
ns
VDD=50V,VGS=10V,ID=83A,
RG,ext=1.6Ω
Unit
Note/TestCondition
Table6Gatechargecharacteristics2)
Parameter
Symbol
Values
Min.
Typ.
Max.
Qgs
-
25
-
nC
VDD=50V,ID=83A,VGS=0to10V
Gate to drain charge
Qgd
-
16
23
nC
VDD=50V,ID=83A,VGS=0to10V
Switching charge
Qsw
-
25
-
nC
VDD=50V,ID=83A,VGS=0to10V
Gate charge total
Qg
-
76
95
nC
VDD=50V,ID=83A,VGS=0to10V
Gate plateau voltage
Vplateau
-
4.7
-
V
VDD=50V,ID=83A,VGS=0to10V
Output charge1)
Qoss
-
98
130
nC
VDD=50V,VGS=0V
Gate to source charge
1)
1)
1)
2)
Defined by design. Not subject to production test.
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.2.0,2016-12-12
OptiMOSª5Power-Transistor,100V
IPB032N10N5
Table7Reversediode
Parameter
Symbol
Diode continous forward current
Diode pulse current
Diode forward voltage
1)
Reverse recovery time
1)
Reverse recovery charge
1)
Values
Unit
Note/TestCondition
156
A
TC=25°C
-
624
A
TC=25°C
-
0.9
1.2
V
VGS=0V,IF=83A,Tj=25°C
trr
-
62
124
ns
VR=50V,IF=83,diF/dt=100A/µs
Qrr
-
103
206
nC
VR=50V,IF=83,diF/dt=100A/µs
Min.
Typ.
Max.
IS
-
-
IS,pulse
-
VSD
Defined by design. Not subject to production test.
Final Data Sheet
5
Rev.2.0,2016-12-12
OptiMOSª5Power-Transistor,100V
IPB032N10N5
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Draincurrent
200
200
180
160
160
140
120
ID[A]
Ptot[W]
120
80
100
80
60
40
40
20
0
0
25
50
75
100
125
150
175
0
200
0
50
100
TC[°C]
150
200
TC[°C]
Ptot=f(TC)
ID=f(TC);VGS10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
100
10
1 µs
10 µs
0.5
100 µs
102
ZthJC[K/W]
ID[A]
0.2
1 ms
101
10 ms
0.1
10-1
0.05
0.02
100
10-1
10-1
0.01
DC
single pulse
100
101
102
103
10-2
10-5
10-4
VDS[V]
10-2
10-1
100
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tp);parameter:D=tp/T
6
Rev.2.0,2016-12-12
OptiMOSª5Power-Transistor,100V
IPB032N10N5
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.drain-sourceonresistance
700
6
10 V
8V
600
5
5V
500
5.5 V
6V
6V
ID[A]
RDS(on)[mΩ]
400
300
5.5 V
4
8V
3
10 V
200
5V
2
100
4.5 V
0
0
1
2
3
4
1
5
0
100
200
VDS[V]
300
400
500
600
700
ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.forwardtransconductance
500
240
450
200
400
350
160
gfs[S]
ID[A]
300
250
120
200
80
150
100
40
175 °C
25 °C
50
0
0
2
4
6
8
0
0
VGS[V]
80
120
160
ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
40
gfs=f(ID);Tj=25°C
7
Rev.2.0,2016-12-12
OptiMOSª5Power-Transistor,100V
IPB032N10N5
Diagram9:Drain-sourceon-stateresistance
Diagram10:Typ.gatethresholdvoltage
7
4.0
3.5
6
1250 µA
3.0
5
125 µA
2.5
max
3
VGS(th)[V]
RDS(on)[mΩ]
4
typ
2.0
1.5
2
1.0
1
0.5
0
-60
-20
20
60
100
140
0.0
-60
180
-20
20
Tj[°C]
60
100
140
180
Tj[°C]
RDS(on)=f(Tj);ID=83A;VGS=10V
VGS(th)=f(Tj);VGS=VDS;parameter:ID
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
5
103
10
25 °C
175 °C
25 °C, max
175 °C, max
104
Ciss
Coss
IF[A]
C[pF]
102
3
10
101
102
101
Crss
0
20
40
60
80
100
0.0
0.5
VDS[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
1.0
1.5
2.0
VSD[V]
IF=f(VSD);parameter:Tj
8
Rev.2.0,2016-12-12
OptiMOSª5Power-Transistor,100V
IPB032N10N5
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
3
10
10
50 V
8
102
80 V
6
20 V
VGS[V]
IAS[A]
25 °C
100 °C
4
150 °C
1
10
2
100
100
101
102
103
0
0
10
tAV[µs]
20
30
40
50
60
70
80
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
VGS=f(Qgate),ID=83Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Gate charge waveforms
110
VBR(DSS)[V]
105
100
95
-60
-20
20
60
100
140
180
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
9
Rev.2.0,2016-12-12
OptiMOSª5Power-Transistor,100V
IPB032N10N5
5PackageOutlines
Figure1OutlinePG-TO263-7,dimensionsinmm/inches
Final Data Sheet
10
Rev.2.0,2016-12-12
OptiMOSª5Power-Transistor,100V
IPB032N10N5
RevisionHistory
IPB032N10N5
Revision:2016-12-12,Rev.2.0
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2016-12-12
Release of final version
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Final Data Sheet
11
Rev.2.0,2016-12-12