IPB034N06L3GATMA1

IPB034N06L3 G Jf]R IPI037N06L3 G IPP037N06L3 G ™ "%&$!"# 3 Power-Transistor Product Summary Features V 9I R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R  - @? > 2 I - ' R ) AE:> :K65 E649? @= @8J 7@C    4@? G6CE6CD I9   .( K +&, Z" 1( 6 AC6G:@FD 6? 8:? 66C:? 8 D2 > A= 6 4@56D ?FF(,eD(.B ?F?(,eD(.B ?F7(,eD(.B R  I46= = 6? E82 E6 492 C86 IR 9I"\[# AC@5F4E ) '  R/ 6CJ = @H @? C6D:DE 2 ? 46 , 9I"\[# R ( 492 ? ? 6= = @8:4 = 6G6= R    2 G2 = 2 ? 496 E6DE 65 R * 3 7C66 A= 2E :? 8 , @" - 4@> A= :2 ? E R + F2 = :7:65 2 44@C5:? 8 E@ $     )# 7@CE2 C86E2 AA= :42 E:@? D R" 2 = @86? 7C66 2 44@C5:? 8 E@ #        Type #*     (   &  ! #* #   (   &  ! #* *    (   &  ! Package F=%JE%*.+%+ F=%JE%*.*%+ F=%JE%**(%+ Marking (+,D(.B (+/D(.B (+/D(.B Maximum ratings, 2 ET W   U  F? = 6DD @E96CH:D6 DA64:7:65 Parameter Symbol Conditions  @? E :? F@FD 5C 2 :? 4FCC6? E I9 T 8   U *# Value 1( T 8   U 1( Unit 6 * F= D65 5C2 :? 4FCC6? E+# I 9$]bY`R T 8   U +.(  G2 = 2 ? 496 6? 6C8J D:? 8= 6 AF= D6,# E 6I I 9     R =I   " ).- Z@ !2 E6 D@FC46 G@= E2 86 V =I r*( K * @H6C5:DD:A2 E:@? P a\a )./ L ) A6C2 E:? 8 2 ? 5 DE@C 2 86 E6> A6C2 EFC6 T W T `aT     U T 8   U #  4= :> 2 E :4 42 E68@CJ  #( #    )# *# $ - .   2 ? 5 $  -     FC C 6? E:D = :> :E65 3 J 3 @? 5H:C 6 H:E9 2 ? R aU@8   % 0 E 96 49:A :D 2 3 = 6 E@ 42 C C J    +# - 66 7:8FC 6  7@C> @C 6 56E 2 := 65 :? 7@C > 2 E:@? ,# - 66 7:8FC 6  7@C> @C 6 56E 2 := 65 :? 7@C >2 E :@? , 6G          A2 86       IPB034N06L3 G IPI037N06L3 G IPP037N06L3 G Parameter Values Symbol Conditions Unit min. typ. max. % % (&1  % % ,( .( % % )&* )&/ *&* Thermal characteristics .96C> 2 =C6D:DE2 ? 46 ;F? 4E:@? 42 D6 R aU@8 .96C> 2 =C6D:DE2 ? 46 R aU@6 ;F? 4E :@? 2 > 3 :6? E > :? :> 2 =7@@EAC:? E  4> W 4@@= :? 8 2 C62 -# A'L Electrical characteristics, 2 ET W   U  F? = 6DD @E96CH:D6 DA64:7:65 Static characteristics  C2 :? D@FC46 3 C62 I   > > I  > > 6A@IJ *   4@? ? 64E :@? *   :D G6C E:42 =:? DE := =2 :C , 6G   hV 9Ih5*hI 9hR 9I"\[#ZNe I 9    ,  H:E9  4>* @? 6 = 2 J6C    X> E 9:4 6E6C567:? :E :@? A2 86        IPB034N06L3 G IPI037N06L3 G IPP037N06L3 G 1 Power dissipation 2 Drain current P a\a4S"T 8# I 94S"T 8 V =I"  / 100 160 80 120 60 I D [A] P tot [W] 200 80 40 40 20 0 0 0 50 100 150 200 0 50 T C [°C] 100 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I 94S"V 9I T 8   U  D 4( Z aU@84S"t ]# A2 C2 > 6E6C t ] A2 C2 > 6E6C  D 4t ]'T 103 100 = :> :E65 3 J @? DE2 E 6 _R`V`aN[PR XD (&-  XD 102   XD (&* 10 1 Z thJC [K/W] I D [A] >D  >D 98 (&) 10 -1 (&((&(* (&() D:? 8= 6 AF= D6 100 10-1 10 10-2 -1 10 0 10 1 10 2 V DS [V] , 6G   10-5 10-4 10-3 10-2 10-1 100 t p [s] A2 86        IPB034N06L3 G IPI037N06L3 G IPP037N06L3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I 94S"V 9I T W   U R 9I"\[#4S"I 9 T W   U A2 C 2 > 6E6C V =I A2 C2 > 6E6C  V =I 320  /  / 15   /  /  /  /   / 12 240 R DS(on) [m ] I D [A]  / 160 9 6   /   /  / 80  / 3 )(K  / 0 0 0 1 2 3 4 5 0 50 100 V DS [V] 150  / 200 250 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I 94S"V =I L V 9Ih5*hI 9hR 9I"\[#ZNe g S`4S"I 9 T W   U A2 C 2 > 6E6C T W 320 200 160 240 g fs [S] I D [A] 120 160 80 80 40   U   U 0 0 0 1 2 3 4 5 , 6G   0 50 100 150 I D [A] V GS [V] A2 86        IPB034N06L3 G IPI037N06L3 G IPP037N06L3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R 9I"\[#4S"T W I 9     V =I  / V =I"aU#4S"T W V =I4V 9I A2 C2 > 6E6C  I9 8 2.5 7 2 6 5 V GS(th) [V] R DS(on) [m ]    X ZNe 4 af] 1.5   X 1 3 2 0.5 1 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C 4S"V 9I V =I  /  f  ' " K I 6E6C T W"`aN_a# A2 C2 > 6E6C  V 99 1000 12  / 10  / 100  / V GS [V] I AS [A] 8   U   U 6   U 10 4 2 1 0 1 10 100 1000 0 50 100 150 Q gate [nC] t AV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V 7H"9II#4S"T W I 9 >  65 V =I Qg V BR(DSS) [V] 60 V T `"aU# 55 Q T "aU# Q `d Q T` 50 -60 -20 20 60 100 140 Q g ate Q TQ 180 T j [°C] , 6G   A2 86        IPB034N06L3 G IPI037N06L3 G IPP037N06L3 G PG-TO-220-3 , 6G   A2 86        IPB034N06L3 G IPI037N06L3 G IPP037N06L3 G PG-TO-262-3 (I²-Pak) , 6G   A2 86        IPB034N06L3 G IPI037N06L3 G IPP037N06L3 G PG-TO-263 (D²-Pak) , 6G   A2 86        IPB034N06L3 G IPI037N06L3 G IPP037N06L3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. , 6G   A2 86