IPB037N06N3GATMA1

IPB037N06N3G MOSFET OptiMOSª3Power-Transistor,60V D²PAK Features •forsync.rectification,drivesanddc/dcSMPS •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •Avalancherated •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 3.7 mΩ ID 132 A Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Type/OrderingCode Package Marking RelatedLinks IPB037N06N3 G PG-TO 263-3 037N06N - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.0,2017-08-08 OptiMOSª3Power-Transistor,60V IPB037N06N3G TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Final Data Sheet 2 Rev.2.0,2017-08-08 OptiMOSª3Power-Transistor,60V IPB037N06N3G 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 132 101 A TC=25°C TC=100°C - 528 A TC=25°C - - 165 mJ ID=90A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 188 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current1) ID,pulse - Avalanche energy, single pulse EAS Gate source voltage 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - - 0.8 K/W - Thermal resistance, junction - ambient, RthJA minimal footprint - - 62 K/W - Thermal resistance, junction - ambient, RthJA 6 cm² cooling area2) - - 40 K/W - Unit Note/TestCondition 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Min. Typ. Max. V(BR)DSS 60 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 2 3 4 V VDS=VGS,ID=90µA Zero gate voltage drain current IDSS - 0.1 10 1 100 µA VDS=60V,VGS=0V,Tj=25°C VDS=60V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 1 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 3.0 3.7 mΩ VGS=10V,ID=90A Gate resistance RG - 1.3 - Ω - Transconductance gfs 61 121 - S |VDS|>2|ID|RDS(on)max,ID=90A 1) See Diagram 3 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) Final Data Sheet 3 Rev.2.0,2017-08-08 OptiMOSª3Power-Transistor,60V IPB037N06N3G Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Unit Note/TestCondition Min. Typ. Max. Ciss - 8000 11000 pF VGS=0V,VDS=30V,f=1MHz Output capacitance Coss - 1700 2300 pF VGS=0V,VDS=30V,f=1MHz Reverse transfer capacitance Crss - 58 87 pF VGS=0V,VDS=30V,f=1MHz Turn-on delay time td(on) - 30 - ns VDD=30V,VGS=10V,ID=90A, RG,ext=3.5Ω Rise time tr - 70 - ns VDD=30V,VGS=10V,ID=90A, RG,ext=3.5Ω Turn-off delay time td(off) - 40 - ns VDD=30V,VGS=10V,ID=90A, RG,ext=3.5Ω Fall time tf - 5 - ns VDD=30V,VGS=10V,ID=90A, RG,ext=3.5Ω Unit Note/TestCondition Table6Gatechargecharacteristics1) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 42 - nC VDD=30V,ID=90A,VGS=0to10V Gate to drain charge Qgd - 9 - nC VDD=30V,ID=90A,VGS=0to10V Switching charge Qsw - 27 - nC VDD=30V,ID=90A,VGS=0to10V Gate charge total Qg - 98 - nC VDD=30V,ID=90A,VGS=0to10V Gate plateau voltage Vplateau - 5.3 - V VDD=30V,ID=90A,VGS=0to10V Output charge Qoss - 79 - nC VDD=30V,VGS=0V Unit Note/TestCondition Table7Reversediode Parameter Symbol Diode continous forward current Values Min. Typ. Max. IS - - 117 A TC=25°C Diode pulse current IS,pulse - - 528 A TC=25°C Diode forward voltage VSD - 0.97 1.2 V VGS=0V,IF=90A,Tj=25°C Reverse recovery time trr - 125 - ns VR=30V,IF=50A,diF/dt=100A/µs Reverse recovery charge Qrr - 110 - nC VR=30V,IF=50A,diF/dt=100A/µs 1) See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.0,2017-08-08 OptiMOSª3Power-Transistor,60V IPB037N06N3G 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 200 140 120 160 100 120 ID[A] Ptot[W] 80 60 80 40 40 20 0 0 50 100 150 0 200 0 50 100 TC[°C] 150 200 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 100 10 1 µs 10 µs 0.5 2 10 100 µs 0.2 1 ms DC ZthJC[K/W] ID[A] 10 ms 1 10 0.1 10 -1 0.05 0.02 0.01 single pulse 100 10-1 10-1 100 101 102 10-2 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 5 Rev.2.0,2017-08-08 OptiMOSª3Power-Transistor,60V IPB037N06N3G Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 320 15 10 V 8V 7V 6.5 V 4.5 V 5.5 V 5V 12 240 RDS(on)[mΩ] ID[A] 6V 160 9 6 6V 5.5 V 6.5 V 80 7V 3 5V 10 V 8V 4.5 V 0 0 1 2 3 4 0 5 0 50 VDS[V] 100 150 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 320 200 160 240 gfs[S] ID[A] 120 160 80 175 °C 80 40 25 °C 0 0 2 4 0 6 0 VGS[V] 100 150 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 50 gfs=f(ID);Tj=25°C 6 Rev.2.0,2017-08-08 OptiMOSª3Power-Transistor,60V IPB037N06N3G Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 8 4.0 7 3.5 6 3.0 5 2.5 900 µA 90 µA VGS(th)[V] RDS(on)[mΩ] 98% 4 typ 2.0 3 1.5 2 1.0 1 0.5 0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=90A;VGS=10V VGS(th)=f(Tj);VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 175 °C 25 °C, 98% 175 °C, 98% Ciss Coss 102 IF[A] C[pF] 103 Crss 102 101 0 20 101 40 60 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 7 Rev.2.0,2017-08-08 OptiMOSª3Power-Transistor,60V IPB037N06N3G Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 12 25 °C 30 V 10 100 °C 12 V 48 V 8 VGS[V] IAS[A] 150 °C 101 6 4 2 100 100 101 102 103 0 0 20 tAV[µs] 40 60 80 100 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=90Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 70 VBR(DSS)[V] 65 60 55 50 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 8 Rev.2.0,2017-08-08 OptiMOSª3Power-Transistor,60V IPB037N06N3G 5PackageOutlines Figure1OutlinePG-TO263-3,dimensionsinmm/inches Final Data Sheet 9 Rev.2.0,2017-08-08 OptiMOSª3Power-Transistor,60V IPB037N06N3G RevisionHistory IPB037N06N3 G Revision:2017-08-08,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2017-08-08 Update product current TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2017InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 10 Rev.2.0,2017-08-08