IPB038N12N3G

IPI041N12N3 G IPP041N12N3 G OptiMOSTM3 Power-Transistor IPB038N12N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) VDS 120 V RDS(on),max (TO-263) 3.8 mW ID 120 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant, halogen free • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification Type IPB038N12N3 G IPI041N12N3 G IPP041N12N3 G Package PG-TO263-3 PG-TO262-3 PG-TO220-3 Marking 038N12N 041N12N 041N12N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C2) 120 T C=100 °C 120 Unit A Pulsed drain current3) I D,pulse T C=25 °C 480 Avalanche energy, single pulse E AS I D=100 A, R GS=25 W 900 mJ Gate source voltage 4) V GS ±20 V Power dissipation P tot 300 W Operating and storage temperature T j, T stg -55 ... 175 °C T C=25 °C IEC climatic category; DIN IEC 68-1 Rev. 2.3 55/175/56 page 1 2014-04-15 IPI041N12N3 G IPP041N12N3 G Parameter IPB038N12N3 G Values Symbol Conditions Unit min. typ. max. - - 0.5 minimal footprint - - 62 6 cm2 cooling area5) - - 40 120 - - Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, R thJA junction - ambient K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=270 µA 2 3 4 Zero gate voltage drain current I DSS V DS=100 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=100 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=100 A - 3.5 4.1 mW V GS=10 V, I D=100 A, TO263 - 3.2 3.8 - 1.4 - W 83 165 - S Gate resistance RG Transconductance g fs 1) |V DS|>2|I D|R DS(on)max, I D=100 A J-STD20 and JESD22 2) Current is limited by bondwire; with an R thJC=0.5 K/W the chip is able to carry 182 A. 3) See figure 3 4) Tjmax=150 °C and duty cycle D=0.01 for Vgs2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 300 200 250 160 200 gfs [S] ID [A] 120 150 80 100 175 °C 25 °C 40 50 0 0 0 2 4 6 8 VGS [V] Rev. 2.3 0 50 100 150 ID [A] page 5 2014-04-15 IPI041N12N3 G IPP041N12N3 G IPB038N12N3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=100 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 10 4 3.5 8 2700 µA 270 µA 2.5 6 VGS(th) [V] RDS(on) [mW] 3 98 % typ 4 2 1.5 1 2 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 105 103 104 25 °C Ciss 175 °C, 98% 175 °C 102 Coss IF [A] C [pF] 25 °C, 98% 103 Crss 101 102 101 100 0 20 40 60 80 100 VDS [V] Rev. 2.3 0 0.5 1 1.5 2 VSD [V] page 6 2014-04-15 IPI041N12N3 G IPP041N12N3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=100 A pulsed parameter: T j(start) parameter: V DD 1000 IPB038N12N3 G 10 96 V 8 60 V 24 V 100 25 °C VGS [V] IAS [A] 6 100 °C 4 150 °C 10 2 1 0 1 10 100 1000 0 50 tAV [µs] 100 150 200 Qgate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 140 V GS 135 Qg 130 VBR(DSS) [V] 125 120 V gs(th) 115 110 Q g(th) 105 Q sw Q gs 100 -60 -20 20 60 100 140 Q gate Q gd 180 Tj [°C] Rev. 2.3 page 7 2014-04-15 IPI041N12N3 G IPP041N12N3 G IPB038N12N3 G PG-TO220-3: Outline Rev. 2.3 page 8 2014-04-15 IPI041N12N3 G IPP041N12N3 G Rev. 2.3 page 9 IPB038N12N3 G 2014-04-15 IPI041N12N3 G IPP041N12N3 G IPB038N12N3 G PG-TO-263 (D²-Pak) Rev. 2.3 page 10 2014-04-15 IPI041N12N3 G IPP041N12N3 G IPB038N12N3 G Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2014. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.3 page 11 2014-04-15