IPB044N15N5

IPB044N15N5 MOSFET OptiMOSª5Power-Transistor,150V D²-PAK7pin Features Features •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Verylowreverserecoverycharge(Qrr) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchronousrectification •Halogen-freeaccordingtoIEC61249-2-21 tab 1 7 Drain Pin 4, tab Table1KeyPerformanceParameters Parameter Value Unit VDS 150 V RDS(on),max(TO263) 4.4 mΩ ID 174 A Qrr 42 nC Type/OrderingCode Package IPB044N15N5 PG-TO263-7 1) Gate Pin 1 Source Pin 2,3,5,6,7 Marking 044N15N5 RelatedLinks - J-STD20 and JESD22 Final Data Sheet 1 2016-04-06 OptiMOSª5Power-Transistor,150V IPB044N15N5 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Final Data Sheet 2 2016-04-06 OptiMOSª5Power-Transistor,150V IPB044N15N5 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 174 123 A TC=25°C TC=100°C - 696 A TC=25°C - - 470 mJ ID=100A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 300 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage Pulsed drain current1) 2) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - 0.3 0.5 K/W - Thermal resistance, junction - ambient, RthJA minimal footprint - - 62 K/W - Thermal resistance, junction - ambient, RthJA 6 cm2 cooling area3) - - 40 K/W - Unit Note/TestCondition 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Min. Typ. Max. V(BR)DSS 150 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 3.0 3.8 4.6 V VDS=VGS,ID=264µA Zero gate voltage drain current IDSS - 0.1 10 1 100 µA VDS=120V,VGS=0V,Tj=25°C VDS=120V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 1 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 3.4 3.7 4.4 4.8 mΩ VGS=10V,ID=87A VGS=8V,ID=44A Gate resistance RG - 0.8 1.2 Ω - Transconductance gfs 72 144 - S |VDS|>2|ID|RDS(on)max,ID=87A 1) See Diagram 3 See Diagram 13 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) Final Data Sheet 3 2016-04-06 OptiMOSª5Power-Transistor,150V IPB044N15N5 Table5Dynamiccharacteristics Parameter Symbol Values Unit Note/TestCondition 8000 pF VGS=0V,VDS=75V,f=1MHz 1500 2000 pF VGS=0V,VDS=75V,f=1MHz - 34 60 pF VGS=0V,VDS=75V,f=1MHz td(on) - 19 - ns VDD=75V,VGS=10V,ID=87A, RG,ext=1.6Ω Rise time tr - 6 - ns VDD=75V,VGS=10V,ID=87A, RG,ext=1.6Ω Turn-off delay time td(off) - 24 - ns VDD=75V,VGS=10V,ID=87A, RG,ext=1.6Ω Fall time tf - 5.0 - ns VDD=75V,VGS=10V,ID=87A, RG,ext=1.6Ω Unit Note/TestCondition Min. Typ. Max. Ciss - 6000 Output capacitance Coss - Reverse transfer capacitance1) Crss Turn-on delay time Input capacitance1) 1) Table6Gatechargecharacteristics2) Parameter Symbol Values Min. Typ. Max. Qgs - 34 - nC VDD=75V,ID=87A,VGS=0to10V Gate to drain charge Qgd - 16 24 nC VDD=75V,ID=87A,VGS=0to10V Switching charge Qsw - 27 - nC VDD=75V,ID=87A,VGS=0to10V Gate charge total Qg - 80 100 nC VDD=75V,ID=87A,VGS=0to10V Gate plateau voltage Vplateau - 5.6 - V VDD=75V,ID=87A,VGS=0to10V Qoss - 225 299 nC VDD=75V,VGS=0V Unit Note/TestCondition Gate to source charge 1) 1) 1) Output charge Table7Reversediode Parameter Symbol Diode continous forward current Diode pulse current Diode forward voltage 1) Reverse recovery time 1) Reverse recovery charge 1) 2) Values Min. Typ. Max. IS - - 174 A TC=25°C IS,pulse - - 696 A TC=25°C VSD - 0.86 1.1 V VGS=0V,IF=87A,Tj=25°C trr - 43 86 ns VR=75V,IF=87,diF/dt=100A/µs Qrr - 42 84 nC VR=75V,IF=87,diF/dt=100A/µs Defined by design. Not subject to production test See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 2016-04-06 OptiMOSª5Power-Transistor,150V IPB044N15N5 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 320 180 280 160 140 240 120 ID[A] Ptot[W] 200 160 100 80 120 60 80 40 40 0 20 0 50 100 150 0 200 0 50 100 TC[°C] 150 200 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 10 100 1 µs 10 µs 100 µs 102 0.5 ZthJC[K/W] ID[A] 1 ms 10 ms 101 DC 10-1 0.2 0.1 0.05 100 0.02 0.01 single pulse -1 10 10-1 100 101 102 103 10 -2 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 5 2016-04-06 OptiMOSª5Power-Transistor,150V IPB044N15N5 Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 700 8 10 V 5.5 V 7 600 8V 6V 6 500 7V 5 RDS(on)[mΩ] 400 ID[A] 7V 300 200 8V 4 10 V 3 2 6V 100 1 5.5 V 5V 0 0 1 2 3 4 0 5 0 100 VDS[V] 200 300 400 120 160 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 400 220 200 350 180 300 160 140 gfs[S] ID[A] 250 200 150 120 100 80 60 100 40 175 °C 50 20 25 °C 0 0 2 4 6 8 0 0 VGS[V] 80 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 40 gfs=f(ID);Tj=25°C 6 2016-04-06 OptiMOSª5Power-Transistor,150V IPB044N15N5 Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 9 4.5 8 4.0 7 3.5 6 3.0 VGS(th)[V] 5.0 RDS(on)[mΩ] 10 max 5 4 typ 2.0 1.5 2 1.0 1 0.5 -20 20 60 100 140 264 µA 2.5 3 0 -60 2640 µA 0.0 -60 180 -20 20 Tj[°C] 60 100 140 RDS(on)=f(Tj);ID=87A;VGS=10V VGS(th)=f(Tj);VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 10 180 Tj[°C] 103 Ciss 25 °C 175 °C 25°C max 175°C max Coss 103 IF[A] C[pF] 102 102 Crss 101 101 100 0 20 40 60 80 100 120 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 7 2016-04-06 OptiMOSª5Power-Transistor,150V IPB044N15N5 Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 3 10 10 75 V 8 30 V 120 V 2 10 6 VGS[V] IAS[A] 25 °C 100 °C 125 °C 4 1 10 2 100 100 101 102 103 0 0 20 tAV[µs] 40 60 80 100 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=87Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 170 165 VBR(DSS)[V] 160 155 150 145 140 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 8 2016-04-06 OptiMOSª5Power-Transistor,150V IPB044N15N5 5PackageOutlines Figure1OutlinePG-TO263-7,dimensionsinmm/inches Final Data Sheet 9 2016-04-06 OptiMOSª5Power-Transistor,150V IPB044N15N5 RevisionHistory IPB044N15N5 Revision:2016-04-06 Previous Revision Date Subjects (major changes since last revision) 2016-04-06 Release of final version TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 10 2016-04-06