IPB048N15N5ATMA1

IPB048N15N5 MOSFET OptiMOSª5Power-Transistor,150V D²PAK Features tab •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Verylowreverserecoverycharge(Qrr) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchronousrectification •Halogen-freeaccordingtoIEC61249-2-21 1 3 Table1KeyPerformanceParameters Parameter Value Unit VDS 150 V RDS(on),max(TO263) 4.8 mΩ ID 120 A Qrr 83 nC Type/OrderingCode Package IPB048N15N5 PG-TO 263-3 1) Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Marking 048N15N5 RelatedLinks - J-STD20 and JESD22 Final Data Sheet 1 Rev.2.1,2018-04-20 OptiMOSª5Power-Transistor,150V IPB048N15N5 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.1,2018-04-20 OptiMOSª5Power-Transistor,150V IPB048N15N5 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 120 118 A TC=25°C TC=100°C - 480 A TC=25°C - - 230 mJ ID=100A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 300 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage Pulsed drain current1) 2) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - 0.3 0.5 K/W - Thermal resistance, junction - ambient, RthJA minimal footprint - - 62 K/W - Thermal resistance, junction - ambient, RthJA 6 cm2 cooling area3) - - 40 K/W - 1) See Diagram 3 See Diagram 13 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) Final Data Sheet 3 Rev.2.1,2018-04-20 OptiMOSª5Power-Transistor,150V IPB048N15N5 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3.8 4.6 V VDS=VGS,ID=264µA - 0.1 10 1 100 µA VDS=120V,VGS=0V,Tj=25°C VDS=120V,VGS=0V,Tj=125°C IGSS - 1 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 3.7 4.0 4.8 5.2 mΩ VGS=10V,ID=60A VGS=8V,ID=30A Gate resistance1) RG - 1.1 1.6 Ω - Transconductance gfs 59 117 - S |VDS|>2|ID|RDS(on)max,ID=60A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 150 - Gate threshold voltage VGS(th) 3.0 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance1) Values Min. Typ. Max. Ciss - 6000 7800 pF VGS=0V,VDS=75V,f=1MHz Coss - 1500 1950 pF VGS=0V,VDS=75V,f=1MHz Reverse transfer capacitance Crss - 34 60 pF VGS=0V,VDS=75V,f=1MHz Turn-on delay time td(on) - 19.6 - ns VDD=75V,VGS=10V,ID=60A, RG,ext=1.6Ω Rise time tr - 5.3 - ns VDD=75V,VGS=10V,ID=60A, RG,ext=1.6Ω Turn-off delay time td(off) - 25.5 - ns VDD=75V,VGS=10V,ID=60A, RG,ext=1.6Ω Fall time tf - 4.5 - ns VDD=75V,VGS=10V,ID=60A, RG,ext=1.6Ω Unit Note/TestCondition Output capacitance1) 1) Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 33 - nC VDD=75V,ID=60A,VGS=0to10V Gate to drain charge1) Qgd - 16 24 nC VDD=75V,ID=60A,VGS=0to10V Switching charge Qsw - 26 - nC VDD=75V,ID=60A,VGS=0to10V Gate charge total Qg - 80 100 nC VDD=75V,ID=60A,VGS=0to10V Gate plateau voltage Vplateau - 5.4 - V VDD=75V,ID=60A,VGS=0to10V Qoss - 225 299 nC VDD=75V,VGS=0V 1) 1) Output charge 1) 2) Defined by design. Not subject to production test See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.1,2018-04-20 OptiMOSª5Power-Transistor,150V IPB048N15N5 Table7Reversediode Parameter Symbol Diode continous forward current Diode pulse current Diode forward voltage 1) Reverse recovery time 1) Reverse recovery charge 1) Values Unit Note/TestCondition 120 A TC=25°C - 480 A TC=25°C - 0.85 1.1 V VGS=0V,IF=60A,Tj=25°C trr - 60 120 ns VR=75V,IF=60,diF/dt=100A/µs Qrr - 83 166 nC VR=75V,IF=60,diF/dt=100A/µs Min. Typ. Max. IS - - IS,pulse - VSD Defined by design. Not subject to production test Final Data Sheet 5 Rev.2.1,2018-04-20 OptiMOSª5Power-Transistor,150V IPB048N15N5 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 320 140 280 120 240 100 80 ID[A] Ptot[W] 200 160 60 120 40 80 20 40 0 0 50 100 150 0 200 0 50 100 TC[°C] 150 200 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 100 10 1 µs 10 µs 100 µs 102 0.5 ZthJC[K/W] ID[A] 1 ms 10 ms 101 DC 10-1 0.2 0.1 0.05 100 0.02 0.01 single pulse -1 10 10-1 100 101 102 103 10 -2 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.1,2018-04-20 OptiMOSª5Power-Transistor,150V IPB048N15N5 Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 600 10 10 V 9 500 8V 7 400 RDS(on)[mΩ] 7V ID[A] 5.5 V 8 300 200 6V 6 7V 8V 5 4 10 V 3 6V 2 100 5.5 V 1 5V 0 0 1 2 3 4 0 5 0 100 200 VDS[V] 300 400 500 600 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 400 200 180 350 160 300 140 120 gfs[S] ID[A] 250 200 100 80 150 60 100 40 50 175 °C 0 0 2 4 20 25 °C 6 8 0 0 VGS[V] 80 120 160 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 40 gfs=f(ID);Tj=25°C 7 Rev.2.1,2018-04-20 OptiMOSª5Power-Transistor,150V IPB048N15N5 Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 12 4.5 11 4.0 2640 µA 10 3.5 9 8 3.0 VGS(th)[V] 7 RDS(on)[mΩ] 264 µA max 6 5 2.5 2.0 typ 4 1.5 3 1.0 2 0.5 1 0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 RDS(on)=f(Tj);ID=60A;VGS=10V VGS(th)=f(Tj);VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 10 103 Ciss 103 180 Tj[°C] 25 °C 175 °C 25°C max 175°C max Coss IF[A] C[pF] 102 102 101 Crss 101 100 0 20 40 60 80 100 120 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 8 Rev.2.1,2018-04-20 OptiMOSª5Power-Transistor,150V IPB048N15N5 Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 3 10 10 8 75 V 120 V 30 V 102 6 VGS[V] IAS[A] 25 °C 100 °C 4 125 °C 1 10 2 100 100 101 102 103 tAV[µs] 0 0 20 40 60 80 100 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=60Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 170 165 VBR(DSS)[V] 160 155 150 145 140 135 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.1,2018-04-20 OptiMOSª5Power-Transistor,150V IPB048N15N5 5PackageOutlines Figure1OutlinePG-TO263-3,dimensionsinmm/inches Final Data Sheet 10 Rev.2.1,2018-04-20 OptiMOSª5Power-Transistor,150V IPB048N15N5 RevisionHistory IPB048N15N5 Revision:2018-04-20,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2016-02-05 Release of final version 2.1 2018-04-20 Update trr, Qrr, tf and td(off) TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. 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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.1,2018-04-20