IPB050N10NF2SATMA1

IPB050N10NF2S MOSFET StrongIRFETTM2Power-Transistor D²PAK Features tab •Optimizedforawiderangeofapplications •N-Channel,normallevel •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 2 1 3 Productvalidation QualifiedaccordingtoJEDECStandard Drain Pin 2, Tab Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 5.05 mΩ ID 103 A Qoss 67 nC QG 51 nC Gate Pin 1 Source Pin 3 Type/OrderingCode Package IPB050N10NF2S PG-TO263-3 Final Data Sheet 1 Marking RelatedLinks 050N10NS - Rev.2.0,2022-09-23 StrongIRFETTM2Power-Transistor IPB050N10NF2S TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.0,2022-09-23 StrongIRFETTM2Power-Transistor IPB050N10NF2S 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 103 79 77 19 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=6V,TC=100°C VGS=10V,TA=25°C,RthJA=40°C/W2) - 412 A TA=25°C - - 100 mJ ID=80A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 150 3.8 W TC=25°C TA=25°C,RthJA=40°C/W2) Operating and storage temperature Tj,Tstg -55 - 175 °C - Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage 1) Continuous drain current Pulsed drain current3) 4) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - - 1.0 °C/W - Thermal resistance, junction - ambient, RthJA 6 cm² cooling area2) - - 40 °C/W - Thermal resistance, junction - ambient, RthJA minimal footprint - - 62 °C/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.0,2022-09-23 StrongIRFETTM2Power-Transistor IPB050N10NF2S 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3.0 3.8 V VDS=VGS,ID=84µA - 0.1 10 1 100 µA VDS=100V,VGS=0V,Tj=25°C VDS=100V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 4.5 5.4 5.05 6.3 mΩ VGS=10V,ID=60A VGS=6V,ID=30A Gate resistance RG - 1.7 - Ω - gfs 56 - - S |VDS|≥2|ID|RDS(on)max,ID=60A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 100 - Gate threshold voltage VGS(th) 2.2 Zero gate voltage drain current IDSS Gate-source leakage current 1) Transconductance Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 3600 - pF VGS=0V,VDS=50V,f=1MHz Output capacitance Coss - 570 - pF VGS=0V,VDS=50V,f=1MHz Reverse transfer capacitance Crss - 25 - pF VGS=0V,VDS=50V,f=1MHz Turn-on delay time td(on) - 14 - ns VDD=50V,VGS=10V,ID=60A, RG,ext=1.6Ω Rise time tr - 47 - ns VDD=50V,VGS=10V,ID=60A, RG,ext=1.6Ω Turn-off delay time td(off) - 25 - ns VDD=50V,VGS=10V,ID=60A, RG,ext=1.6Ω Fall time tf - 9 - ns VDD=50V,VGS=10V,ID=60A, RG,ext=1.6Ω Unit Note/TestCondition Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 17 - nC VDD=50V,ID=60A,VGS=0to10V Gate charge at threshold Qg(th) - 11 - nC VDD=50V,ID=60A,VGS=0to10V Gate to drain charge Qgd - 11 - nC VDD=50V,ID=60A,VGS=0to10V Switching charge Qsw - 17 - nC VDD=50V,ID=60A,VGS=0to10V Gate charge total Qg - 51 76 nC VDD=50V,ID=60A,VGS=0to10V Gate plateau voltage Vplateau - 4.7 - V VDD=50V,ID=60A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 44 - nC VDS=0.1V,VGS=0to10V Output charge Qoss - 67 - nC VDS=50V,VGS=0V 1) 1) 2) Defined by design. Not subject to production test. See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.0,2022-09-23 StrongIRFETTM2Power-Transistor IPB050N10NF2S Table7Reversediode Parameter Symbol Diode continuous forward current Values Unit Note/TestCondition 87 A TC=25°C - 412 A TC=25°C - 0.91 1.2 V VGS=0V,IF=60A,Tj=25°C trr - 37 - ns VR=50V,IF=60A,diF/dt=500A/µs Qrr - 247 - nC VR=50V,IF=60A,diF/dt=500A/µs Min. Typ. Max. IS - - Diode pulse current IS,pulse - Diode forward voltage VSD Reverse recovery time Reverse recovery charge Final Data Sheet 5 Rev.2.0,2022-09-23 StrongIRFETTM2Power-Transistor IPB050N10NF2S 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 160 120 140 100 120 80 ID[A] Ptot[W] 100 80 60 60 40 40 20 20 0 0 25 50 75 100 125 150 0 175 0 25 50 TC[°C] 75 100 125 150 175 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 10 µs 2 10 100 100 µs ZthJC[K/W] 101 ID[A] 1 ms 10 ms 100 single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10-1 DC 10-2 -1 10 10-2 10-1 100 101 102 103 10-3 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.0,2022-09-23 StrongIRFETTM2Power-Transistor IPB050N10NF2S Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 500 14 10 V 8V 7V 12 400 10 4.5 V 5V RDS(on)[mΩ] ID[A] 300 6V 200 8 6V 6 7V 8V 4 10 V 100 2 5V 0 4.5 V 0 1 2 3 4 0 5 0 40 80 120 VDS[V] 160 200 240 ID[A] ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.drain-sourceonresistance 500 14 12 400 10 RDS(on)[mΩ] ID[A] 300 25 °C 200 175 °C 8 6 25 °C 175 °C 4 100 2 0 0 1 2 3 4 5 6 7 VGS[V] 0 3 6 9 12 15 VGS[V] ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 0 RDS(on)=f(VGS),ID=60A;parameter:Tj 7 Rev.2.0,2022-09-23 StrongIRFETTM2Power-Transistor IPB050N10NF2S Diagram9:Normalizeddrain-sourceonresistance Diagram10:Typ.gatethresholdvoltage 2.4 4.0 3.5 3.0 840 µA 1.6 2.5 VGS(th)[V] RDS(on)(normalizedto25°C) 2.0 1.2 2.0 84 µA 1.5 0.8 1.0 0.4 0.5 0.0 -75 -50 -25 0 25 50 75 0.0 -75 100 125 150 175 200 -50 -25 0 Tj[°C] 25 50 75 100 125 150 175 200 Tj[°C] RDS(on)=f(Tj),ID=60A,VGS=10V VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Typ.forwardcharacteristicsofreversediode 4 103 10 25 °C 175 °C Ciss IF[A] 102 C[pF] 103 Coss 102 101 101 Crss 0 20 40 60 80 100 100 0.00 0.25 0.50 VDS[V] 1.00 1.25 1.50 1.75 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.75 IF=f(VSD);parameter:Tj 8 Rev.2.0,2022-09-23 StrongIRFETTM2Power-Transistor IPB050N10NF2S Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 3 10 10 20 V 50 V 80 V 8 102 6 101 VGS[V] IAV[A] 25 °C 100 °C 4 150 °C 100 2 10-1 10-1 100 101 102 103 tAV[µs] 0 0 10 20 30 40 50 60 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj,start VGS=f(Qgate),ID=60Apulsed,Tj=25°C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 108 106 VBR(DSS)[V] 104 102 100 98 96 94 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.0,2022-09-23 StrongIRFETTM2Power-Transistor IPB050N10NF2S 5PackageOutlines PACKAGE - GROUP NUMBER: DIMENSIONS A A1 b b1 c c1 D D1 E E1 e N H L L1 L2 THETA PG-TO263-3-U02 MILLIMETERS MIN. MAX. 4.06 4.83 0.00 0.25 0.51 1.00 1.07 1.78 0.30 0.73 1.65 1.14 8.38 9.65 6.60 7.50 9.65 10.67 6.22 8.70 2.54 3 14.60 15.88 1.52 2.60 1.05 1.68 1.35 1.78 -9.00° 8.00° Figure1OutlinePG-TO263-3,dimensionsinmm Final Data Sheet 10 Rev.2.0,2022-09-23 StrongIRFETTM2Power-Transistor IPB050N10NF2S RevisionHistory IPB050N10NF2S Revision:2022-09-23,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2022-09-23 Release of final version Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2022InfineonTechnologiesAG AllRightsReserved. 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Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.0,2022-09-23