IPB060N15N5ATMA1

IPB060N15N5 MOSFET OptiMOSª5Power-Transistor,150V D²-PAK7pin Features Features •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Verylowreverserecoverycharge(Qrr) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchronousrectification •Halogen-freeaccordingtoIEC61249-2-21 tab 1 7 Drain Pin 4, tab Table1KeyPerformanceParameters Parameter Value Unit VDS 150 V RDS(on),max(TO263) 6.0 mΩ ID 136 A Qrr 60 nC Type/OrderingCode Package IPB060N15N5 PG-TO263-7 1) Gate Pin 1 Source Pin 2,3,5,6,7 Marking 060N15N5 RelatedLinks - J-STD20 and JESD22 Final Data Sheet 1 Rev.2.0,2016-12-13 OptiMOSª5Power-Transistor,150V IPB060N15N5 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.0,2016-12-13 OptiMOSª5Power-Transistor,150V IPB060N15N5 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 136 96 A TC=25°C TC=100°C - 544 A TC=25°C - - 190 mJ ID=100A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 250 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage Pulsed drain current1) 2) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - 0.4 0.6 K/W - Thermal resistance, junction - ambient, RthJA minimal footprint - - 62 K/W - Thermal resistance, junction - ambient, RthJA 6 cm2 cooling area3) - - 40 K/W - 1) See Diagram 3 See Diagram 13 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) Final Data Sheet 3 Rev.2.0,2016-12-13 OptiMOSª5Power-Transistor,150V IPB060N15N5 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3.8 4.6 V VDS=VGS,ID=180µA - 0.1 10 1 100 µA VDS=120V,VGS=0V,Tj=25°C VDS=120V,VGS=0V,Tj=125°C IGSS - 1 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 4.8 5.2 6.0 7.7 mΩ VGS=10V,ID=68A VGS=8V,ID=34A Gate resistance1) RG - 0.9 1.4 Ω - Transconductance gfs 53 106 - S |VDS|>2|ID|RDS(on)max,ID=68A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 150 - Gate threshold voltage VGS(th) 3.0 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Values Min. Typ. Max. Ciss - 4100 5300 pF VGS=0V,VDS=75V,f=1MHz Coss - 1000 1300 pF VGS=0V,VDS=75V,f=1MHz Reverse transfer capacitance Crss - 24 42 pF VGS=0V,VDS=75V,f=1MHz Turn-on delay time td(on) - 14.9 - ns VDD=75V,VGS=10V,ID=68A, RG,ext=1.6Ω Rise time tr - 4.3 - ns VDD=75V,VGS=10V,ID=68A, RG,ext=1.6Ω Turn-off delay time td(off) - 22.2 - ns VDD=75V,VGS=10V,ID=68A, RG,ext=1.6Ω Fall time tf - 4.1 - ns VDD=75V,VGS=10V,ID=68A, RG,ext=1.6Ω Unit Note/TestCondition Input capacitance1) 1) Output capacitance 1) Table6Gatechargecharacteristics2) Parameter Symbol Values Min. Typ. Max. Qgs - 23.3 - nC VDD=75V,ID=68A,VGS=0to10V Gate to drain charge Qgd - 11.1 16.7 nC VDD=75V,ID=68A,VGS=0to10V Switching charge Qsw - 18.9 - nC VDD=75V,ID=68A,VGS=0to10V Gate charge total Qg - 54.5 68 nC VDD=75V,ID=68A,VGS=0to10V Gate plateau voltage Vplateau - 5.7 - V VDD=75V,ID=68A,VGS=0to10V Output charge1) Qoss - 153 203 nC VDD=75V,VGS=0V Gate to source charge 1) 1) 1) 2) Defined by design. Not subject to production test See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.0,2016-12-13 OptiMOSª5Power-Transistor,150V IPB060N15N5 Table7Reversediode Parameter Symbol Diode continous forward current Diode pulse current Diode forward voltage 1) Reverse recovery time 1) Reverse recovery charge 1) Values Unit Note/TestCondition 136 A TC=25°C - 544 A TC=25°C - 0.9 1.1 V VGS=0V,IF=68A,Tj=25°C trr - 50 100 ns VR=75V,IF=68A,diF/dt=100A/µs Qrr - 60 120 nC VR=75V,IF=68A,diF/dt=100A/µs Min. Typ. Max. IS - - IS,pulse - VSD Defined by design. Not subject to production test Final Data Sheet 5 Rev.2.0,2016-12-13 OptiMOSª5Power-Transistor,150V IPB060N15N5 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 280 160 140 240 120 200 ID[A] Ptot[W] 100 160 80 120 60 80 40 40 0 20 0 50 100 150 0 200 0 50 100 TC[°C] 150 200 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 100 10 1 µs 10 µs 102 0.5 100 µs 101 ZthJC[K/W] ID[A] 1 ms 10 ms 0.2 10-1 0.1 0.05 DC 0.02 100 0.01 single pulse 10-1 10-1 100 101 102 103 10-2 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.0,2016-12-13 OptiMOSª5Power-Transistor,150V IPB060N15N5 Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 700 12 11 600 10 V 5.5 V 10 6V 9 500 7V 8V 8 ID[A] RDS(on)[mΩ] 400 300 7V 8V 7 10 V 6 5 4 200 3 2 6V 100 5.5 V 0 1 5V 0 1 2 3 4 0 5 0 100 VDS[V] 200 300 400 500 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 400 180 350 160 140 300 120 gfs[S] ID[A] 250 200 100 80 150 60 100 40 175 °C 50 20 25 °C 0 0 2 4 6 0 8 0 VGS[V] 80 120 160 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 40 gfs=f(ID);Tj=25°C 7 Rev.2.0,2016-12-13 OptiMOSª5Power-Transistor,150V IPB060N15N5 Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 14 5.0 13 4.5 12 11 4.0 10 3.5 9 max 180 µA 3.0 VGS(th)[V] 8 RDS(on)[mΩ] 1800 µA 7 6 typ 2.5 2.0 5 4 1.5 3 1.0 2 0.5 1 0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=68A;VGS=10V VGS(th)=f(Tj);VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 175 °C 25°C max 175°C max Ciss 103 Coss IF[A] C[pF] 102 102 Crss 101 101 100 0 20 40 60 80 100 120 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 8 Rev.2.0,2016-12-13 OptiMOSª5Power-Transistor,150V IPB060N15N5 Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 3 10 10 8 75 V 30 V 2 10 120 V 6 VGS[V] IAS[A] 25 °C 100 °C 4 125 °C 1 10 2 100 100 101 102 103 0 0 10 tAV[µs] 20 30 40 50 60 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=68Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 165 160 VBR(DSS)[V] 155 150 145 140 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.0,2016-12-13 OptiMOSª5Power-Transistor,150V IPB060N15N5 5PackageOutlines Figure1OutlinePG-TO263-7,dimensionsinmm/inches Final Data Sheet 10 Rev.2.0,2016-12-13 OptiMOSª5Power-Transistor,150V IPB060N15N5 RevisionHistory IPB060N15N5 Revision:2016-12-13,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2016-12-13 Release of final version TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.0,2016-12-13