IPB065N10N3G

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSª3Power-Transistor,100V IPB065N10N3G DataSheet Rev.2.0 Final PowerManagement&Multimarket OptiMOSª3Power-Transistor,100V IPB065N10N3G 1Description D²PAK Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchronousrectification •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 6.5 mΩ ID 80 A Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Type/OrderingCode Package Marking RelatedLinks IPB065N10N3 G PG-TO 263-3 065N10N - 1) J-STD20 and JESD22 Final Data Sheet 2 Rev.2.0,2014-07-04 OptiMOSª3Power-Transistor,100V IPB065N10N3G TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Final Data Sheet 3 Rev.2.0,2014-07-04 OptiMOSª3Power-Transistor,100V IPB065N10N3G 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 80 73 A TC=25°C1) TC=100°C - 320 A TC=25°C - - 160 mJ ID=80A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 150 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current1) ID,pulse - Avalanche energy, single pulse EAS Gate source voltage 3Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - - 1 K/W - Thermal resistance, junction - ambient, RthJA minimal footprint - - 62 K/W - Thermal resistance, junction - ambient, RthJA 6 cm2 cooling area2) - - 40 K/W - 1) See figure 3 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) Final Data Sheet 4 Rev.2.0,2014-07-04 OptiMOSª3Power-Transistor,100V IPB065N10N3G 4Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 2.7 3.5 V VDS=VGS,ID=90µA - 0.1 10 1 100 µA VDS=100V,VGS=0V,Tj=25°C VDS=100V,VGS=0V,Tj=125°C IGSS - 1 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 5.9 7.3 6.5 12.4 mΩ VGS=10V,ID=80A VGS=6V,ID=40A Gate resistance1) RG - 1.6 2.4 Ω - Transconductance gfs 50 99 - S |VDS|>2|ID|RDS(on)max,ID=80A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 100 - Gate threshold voltage VGS(th) 2 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics1) Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 3690 4910 pF VGS=0V,VDS=50V,f=1MHz Output capacitance Coss - 646 859 pF VGS=0V,VDS=50V,f=1MHz Reverse transfer capacitance Crss - 25 44 pF VGS=0V,VDS=50V,f=1MHz Turn-on delay time td(on) - 19 - ns VDD=50V,VGS=10V,ID=80A, RG,ext=1.6Ω Rise time tr - 37 - ns VDD=50V,VGS=10V,ID=80A, RG,ext=1.6Ω Turn-off delay time td(off) - 37 - ns VDD=50V,VGS=10V,ID=80A, RG,ext=1.6Ω Fall time tf - 9 - ns VDD=50V,VGS=10V,ID=80A, RG,ext=1.6Ω Unit Note/TestCondition Table6Gatechargecharacteristics2) Parameter Symbol Values Min. Typ. Max. Qgs - 18 - nC VDD=50V,ID=80A,VGS=0to10V Gate to drain charge Qgd - 10 15 nC VDD=50V,ID=80A,VGS=0to10V Switching charge Qsw - 16 - nC VDD=50V,ID=80A,VGS=0to10V Gate charge total Qg - 51 64 nC VDD=50V,ID=80A,VGS=0to10V Gate plateau voltage Vplateau - 4.9 - V VDD=50V,ID=80A,VGS=0to10V Qoss - 68 91 nC VDD=50V,VGS=0V Gate to source charge 1) 1) Output charge 1) 2) Defined by design. Not subject to production test. See ″Gate charge waveforms″ for parameter definition Final Data Sheet 5 Rev.2.0,2014-07-04 OptiMOSª3Power-Transistor,100V IPB065N10N3G Table7Reversediode Parameter Symbol Diode continous forward current Diode pulse current Diode forward voltage 1) Reverse recovery time 1) Reverse recovery charge 1) Values Unit Note/TestCondition 80 A TC=25°C - 320 A TC=25°C - 1 1.2 V VGS=0V,IF=80A,Tj=25°C trr - 73 146 ns VR=50V,IF=IS,diF/dt=100A/µs Qrr - 139 278 nC VR=50V,IF=IS,diF/dt=100A/µs Min. Typ. Max. IS - - IS,pulse - VSD Defined by design. Not subject to production test. Final Data Sheet 6 Rev.2.0,2014-07-04 OptiMOSª3Power-Transistor,100V IPB065N10N3G 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 175 100 150 80 60 100 ID[A] Ptot[W] 125 75 40 50 20 25 0 0 50 100 150 0 200 0 50 100 TC[°C] 150 200 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 10 µs 102 100 µs 100 ID[A] ZthJC[K/W] 1 ms 101 10 ms 0 10 0.5 0.2 0.1 10-1 DC 0.05 0.02 0.01 10-1 single pulse 10-2 10-1 100 101 102 103 10-2 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 7 Rev.2.0,2014-07-04 OptiMOSª3Power-Transistor,100V IPB065N10N3G Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 400 12 4.5 V 10 V 320 7.5 V 5V 6V 9 RDS(on)[mΩ] 240 ID[A] 6V 160 6 10 V 3 5V 80 7.5 V 4.5 V 0 0 1 2 3 4 0 5 0 50 100 VDS[V] 150 200 RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 160 160 120 120 gfs[S] ID[A] ID=f(VDS);Tj=25°C;parameter:VGS 80 40 300 80 40 175 °C 0 250 ID[A] 0 2 25 °C 4 6 8 0 0 VGS[V] 100 150 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 50 gfs=f(ID);Tj=25°C 8 Rev.2.0,2014-07-04 OptiMOSª3Power-Transistor,100V IPB065N10N3G Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 14 4.0 12 3.5 3.0 10 900 µA 2.5 max VGS(th)[V] RDS(on)[mΩ] 8 typ 6 90 µA 2.0 1.5 4 1.0 2 0.5 0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=80A;VGS=10V VGS(th)=f(Tj);VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 175 °C 25 °C max 175 °C max Ciss Coss 102 IF[A] C[pF] 103 102 101 Crss 101 0 20 40 60 80 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 9 Rev.2.0,2014-07-04 OptiMOSª3Power-Transistor,100V IPB065N10N3G Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 102 10 150 °C 8 25 °C 100 °C 80 V 50 V 20 V VGS[V] IAS[A] 6 101 4 2 100 10-1 100 101 102 103 0 0 tAV[µs] 20 40 60 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=80Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 110 VBR(DSS)[V] 105 100 95 90 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 10 Rev.2.0,2014-07-04 OptiMOSª3Power-Transistor,100V IPB065N10N3G 6PackageOutlines Figure1OutlinePG-TO263-3,dimensionsinmm/inches Final Data Sheet 11 Rev.2.0,2014-07-04 OptiMOSª3Power-Transistor,100V IPB065N10N3G RevisionHistory IPB065N10N3 G Revision:2014-07-04,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2014-07-04 Release of final version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 12 Rev.2.0,2014-07-04