IPB100N12S3-05
IPI100N12S3-05, IPP100N12S3-05
OptiMOS®-T Power-Transistor
Product Summary
VDS
120
V
RDS(on),max (SMD version)
4.8
mW
ID
100
A
Features
• OptiMOS™ - power MOSFET for automotive applications
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
Type
Package
Marking
IPB100N12S3-05
PG-TO263-3-2
3PN1205
IPI100N12S3-05
PG-TO262-3-1
3PN1205
IPP100N12S3-05
PG-TO220-3-1
3PN1205
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current1)
ID
Conditions
T C=25 °C, V GS=10 V
T C=100 °C,
Value
100
V GS=10 V2)
100
Unit
A
Pulsed drain current2)
I D,pulse
T C=25 °C
400
Avalanche energy, single pulse2)
E AS
I D=50A
1445
mJ
Avalanche current, single pulse
I AS
-
100
A
Gate source voltage
V GS
-
±20
V
Power dissipation
P tot
T C=25 °C
300
W
Operating and storage temperature
T j, T stg
-
-55 ... +175
°C
Rev. 1.0
page 1
2016-06-20
IPB100N12S3-05
IPI100N12S3-05, IPP100N12S3-05
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
Thermal characteristics2)
Thermal resistance, junction - case
R thJC
-
-
-
0.5
Thermal resistance, junction ambient, leaded
R thJA
-
-
-
62
SMD version, device on PCB
R thJA
minimal footprint
-
-
62
6 cm2 cooling area3)
-
-
40
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
120
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=240µA
2.0
3.0
4.0
Zero gate voltage drain current
I DSS
V DS=120 V, V GS=0 V,
T j=25 °C
-
0.01
1
T j=125 °C2)
-
1
100
V DS=120 V, V GS=0 V,
V
µA
Gate-source leakage current
I GSS
V GS=20V, V DS=0V
-
-
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10V, I D=100A
-
4.3
5.1
mW
V GS=10V, I D=100A,
SMD version
-
4.0
4.8
Rev. 1.0
page 2
2016-06-20
IPB100N12S3-05
IPI100N12S3-05, IPP100N12S3-05
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
-
8900
11570 pF
-
2520
3276
Dynamic characteristics2)
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
220
330
Turn-on delay time
t d(on)
-
34
-
Rise time
tr
-
17
-
Turn-off delay time
t d(off)
-
60
-
Fall time
tf
-
20
-
Gate to source charge
Q gs
-
46
61
Gate to drain charge
Q gd
-
34
51
Gate charge total
Qg
-
139
185
Gate plateau voltage
V plateau
-
5.5
-
V
-
-
100
A
-
-
400
V GS=0V, V DS=25V,
f =1MHz
V DD=20V, V GS=10V,
I D=80A, R G=3.5W
ns
Gate Charge Characteristics2)
V DD=96V, I D=100A,
V GS=0 to 10V
nC
Reverse Diode
Diode continous forward current2)
IS
Diode pulse current2)
I S,pulse
Diode forward voltage
V SD
V GS=0V, I F=100A,
T j=25°C
0.6
1
1.2
V
Reverse recovery time2)
t rr
V R=60V, I F=50A,
di F/dt =100A/µs
-
108
-
ns
Reverse recovery charge2)
Q rr
-
380
-
nC
T C=25°C
1)
Current is limited by bondwire; with an R thJC = 0.5K/W the chip is able to carry 165A at 25°C. For detailed
information see Application Note ANPS071E
2)
Defined by design. Not subject to production test.
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2016-06-20
IPB100N12S3-05
IPI100N12S3-05, IPP100N12S3-05
1 Power dissipation
2 Drain current
P tot = f(T C); V GS = 10 V
I D = f(T C); V GS = 10 V; SMD
300
100
250
80
ID [A]
Ptot [W]
200
150
60
40
100
20
50
0
0
0
50
100
150
200
0
50
100
TC [°C]
150
200
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D = f(V DS); T C = 25 °C; D = 0; SMD
Z thJC = f(t p)
parameter: t p
parameter: D =t p/T
1000
101
1 µs
10 µs
100
100 µs
100
ID [A]
ZthJC [K/W]
0.5
10-1
0.1
0.05
1 ms
10
10-2
0.01
single pulse
10-3
1
0.1
1
10
100
1000
10-5
10-4
10-3
10-2
10-1
100
tp [s]
VDS [V]
Rev. 1.0
10-6
page 4
2016-06-20
IPB100N12S3-05
IPI100N12S3-05, IPP100N12S3-05
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D = f(V DS); T j = 25 °C; SMD
R DS(on) = f(I D); T j = 25 °C; SMD
parameter: V GS
parameter: V GS
400
9
10 V
7V
6.5 V
360
8
320
5.5 V
280
7
6V
RDS(on) [mΩ]
ID [A]
240
200
5.5 V
160
6
6V
5
120
6.5 V
7V
5V
80
4
10 V
40
0
3
0
1
2
3
4
5
0
20
40
60
VDS [V]
80
100 120 140 160 180
ID [A]
7 Typ. transfer characteristics
8 Typ. drain-source on-state resistance
I D = f(V GS); V DS = 6V
R DS(on) = f(T j); I D = 100 A; V GS = 10 V; SMD
parameter: T j
350
8.5
300
7.5
250
RDS(on) [mW]
6.5
ID [A]
200
150
5.5
4.5
100
175 °C
3.5
50
25 °C
-55 °C
0
3
4
5
6
7
VGS [V]
Rev. 1.0
2.5
-60
-20
20
60
100
140
180
Tj [°C]
page 5
2016-06-20
IPB100N12S3-05
IPI100N12S3-05, IPP100N12S3-05
9 Typ. gate threshold voltage
10 Typ. capacitances
V GS(th) = f(T j); V GS = V DS
C = f(V DS); V GS = 0 V; f = 1 MHz
parameter: I D
4
VGS(th) [V]
3
C [pF]
3.5
1200 µA
104
Ciss
Coss
240 µA
2.5
103
2
Crss
102
1.5
-60
-20
20
60
100
140
0
180
5
10
15
20
25
30
VDS [V]
Tj [°C]
11 Typical forward diode characteristics
12 Typ. avalanche characteristics
IF = f(VSD)
I A S= f(t AV)
parameter: T j
parameter: Tj(start)
103
1000
102
100
25 °C
IF [A]
IAV [A]
100 °C
175 °C
25 °C
101
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD [V]
Rev. 1.0
150 °C
1
0.1
1
10
100
1000
tAV [µs]
page 6
2016-06-20
IPB100N12S3-05
IPI100N12S3-05, IPP100N12S3-05
13 Typical avalanche energy
14 Typ. drain-source breakdown voltage
E AS = f(T j)
V BR(DSS) = f(T j); I D = 1 mA
parameter: I D
135
3500
3000
130
25 A
VBR(DSS) [V]
EAS [mJ]
2500
2000
1500
50 A
125
120
1000
115
100 A
500
110
0
25
75
125
-55
175
-15
Tj [°C]
25
65
105
145
Tj [°C]
15 Typ. gate charge
16 Gate charge waveforms
V GS = f(Q gate); I D = 100 A pulsed
parameter: V DD
10
V GS
9
Qg
24 V
8
96 V
7
VGS [V]
6
5
V gs(th)
4
3
2
Q g(th)
Q sw
Q gate
1
Q gs
0
0
20
40
60
80
100
120
Q gd
140
Qgate [nC]
Rev. 1.0
page 7
2016-06-20
IPB100N12S3-05
IPI100N12S3-05, IPP100N12S3-05
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2016
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including
without limitation warranties of non‑infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please
contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information
on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the
express written approval of Infineon Technologies, if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body, or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
Rev. 1.0
page 8
2016-06-20
IPB100N12S3-05
IPI100N12S3-05, IPP100N12S3-05
Revision History
Version
Date
Changes
Revision 1.0
Rev. 1.0
20.06.2016 Final Data Sheet
page 9
2016-06-20